ECE/Exam 

Cell/002 
 

SCHOOL OF ELECTRICAL & COMMUNICATION

DEPARTMENT OF ECE
 
VTU R 2015

Assignment – 1 
Problem Solving 

B.Tech. ‐ ECE 
Course Category: Program Core            
Course Code/Course Title: 1152EC104/ANALOG VLSI DESIGN      Max. Marks: 5 marks 
Semester: EVEN                   Date of Submission: 06‐04‐2022 
Section: A 
    Achievable Course Outcomes 
Identify the mathematical models in CMOS analog electronics circuits. 
CO1  K3  Level 
 
Discuss the Analog CMOS Sub circuits like reference Current Source and 
CO2  K2  Level 
current mirrors. 
 

Expectation: 
 The student should be able to  
o Identify the modelling to be used for MOSFET operation (PO2) 
o Provides the designing of Reference Circuits (PO3) 

Course  Relevance 
Assignment Topics/Questions  Marks  Level 
Outcome  with POs 

The ID-VDS characteristics for a MOS device ID if VGS CO1   PO1 

1  = 0.65 V, VSB = 0 V, and VDS = 1 V draw the graph 5  K2 
with explanation.    
An n-channel enhancement mode MOSFET is biased at
VGS > VTH and VDS > (VGS - VTH), where VGS is
the gate-to-source voltage, VDS is the drain-to-source
2  voltage and VTH is the threshold voltage. Considering 5  CO1   K2  PO2 
channel length modulation effect to be significant, the
MOSFET used as a current source with finite impedance.
Justify your answer.
Assume that a threshold voltage difference of 10 mV
exists between the two MOSFETs used in a simple
current mirror made using equal size MOSFETs.
Calculate the difference in the drain currents to change PO1 
 3  with the MOSFET VGS ? Is matching between the
5  CO2  K2 
 
currents better or worse with large VGS ? what happens
to the minimum voltage across the current mirror if VGS
is increased ?
The ID-VDS characteristics for a MOS device ID if VGS
4  = 1.95 V, VSB = 2 V, and VM = 1.5 V draw the graph 5  CO1  K2  PO2 
with explanation.

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SCHOOL OF ELECTRICAL & COMMUNICATION

DEPARTMENT OF ECE
 
VTU R 2015

In MOSFET devices the N-channel type is better than the

5  P – Channel type. Justify your answer.
5  CO1   K3  PO3 
Draw the ID-VGS characteristics of the MOS device ID
6  if VGS = 0.65 V, VSB = 0 V, and VDS = 1 V with 5  CO1  K3  PO1 
explanation.
For a cascode current mirror made using 15/5 devices,
7  calculate the minimum output voltage, Vomin.
5  CO2  K3  PO2 
Design a circuit to bias the MOSFET in figure shown, so
that its drain current is 5 μA. Estimate the minimum CO2  K3  PO9 
voltage across M1 if it is to remain in saturation.

8  5 

The ID-VDS characteristics for a MOS device VBS if ID CO1  K3  PO1 
9  = 40 uA, Vs s = 0 V, and VGS = 1.8 V draw the graph 5 
with explanation.  
When the gate – to – source voltage (VGS) of a
MOSFET with threshold voltage of 400 mV, working in CO1  K3 
saturation is 900 mV, the drain current is observed to be
10  1 mA. Neglecting the channel width modulation effect 5  PO3 
and assuming that the MOSFET is operating at
saturation, the drain current for an applied VGS of 1400
mV.

Design a regulated cascode current sink of 1 μA. CO1  K3  PO1 

11  Estimate the output resistance of the current sink
5 
 
Draw the ID-VGS characteristics of the MOS device ID CO1 
12  if VGS = 1.95 V, VSB = 2 V, and VM = 1.5 V with 5  K3  PO2 
explanation.
Design a bias circuit so that the current that flows in M1 CO2 
and M2 is 1μA. What are the small signal resistances K3  PO9 
looking into the drains of M2 and M1 ? what is the
minimum voltage across M1 and M2 for operation in the
saturation region ?

13  5 

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 ECE/Exam Cell/002 
 

SCHOOL OF ELECTRICAL & COMMUNICATION

DEPARTMENT OF ECE
 
VTU R 2015

 
CO2 
Design a simple voltage reference circuit with K3  PO1 
14  expression.
5 
 
Design a simple current mirror using a current of 1 μA CO2 
15  and VGS of 1 volt.
5  K3  PO2 
The drain of an n – channel MOSFET is shorted to the CO1 
gate so that 𝑉𝐺𝑆 = 𝑉𝐷𝑆 . The threshold voltage (VT) of K3  PO1 
16  MOSFET is 1 V. If the drain current (ID) is 1 mA for
5 
 
VGS = 2 V, then for 𝑉𝐺𝑆 = 3 𝑉, ID.
The measured Transconductance 𝑔𝑚 of an NMOS CO1 
transistor operating in the linear region is plotted against K3 
17  5  PO2 
voltage VG at a Constant drain voltage VD. Draw the
graph and explain.
A depletion type N – channel MOSFET in biased in its CO2 
linear region for use as a voltage controlled resistor . K3 
Assume threshold voltage 𝑉𝑇𝐻 = 0.5𝑉 , 𝑉𝐺𝑆 = 2.0𝑉 , PO1 
18  5 
𝑉𝐷𝑆 = 5𝑉 , 𝑊∕𝐿 = 100, 𝐶𝑂𝑋 = 10−8 𝐹/𝑐𝑚2 and 𝜇𝑛 =  
800 𝑐𝑚2∕𝑉 − 𝑠. The value of the resistance of the voltage
controlled resistor (Ω).
Consider the following two situations about the internal CO1 
conditions in an n – channel MOSFET operating in the K3 
19  active region. S1: The inversion charge decreases from 5  PO2 
source to drain and S2 : The channel potential increases
from source to drain. Justify your answer.
CO2 
The Design of a Bandgap-Voltage Reference circuit with K3  PO3 
20  MOSFET.
5 
 
Draw the ID-VGS characteristics of the MOS device CO1 
21  VBS if ID = 40 uA, Vs s = 0 V, and VGS = 1.8 V with   K3  PO2 
explanation.
The slope of the 𝐼𝐷 𝑣𝑠 . 𝑉𝐺𝑆 curve of an n – channel CO1 
MOSFET in linear region is 10−3 Ω−1 at 𝑉𝐷𝑆 = 0.1𝑉 . K3  PO9 
22  For the same device, neglecting channel length 5 
modulation, the slope of the √𝐼𝐷 𝑣𝑠 𝑉𝐺𝑆 curve (𝑖𝑛 √𝐴∕𝑉)
under saturation region is approximately. Draw the graph
Calculate the small signal conductance parameters for CO1 
K3  PO1 
23  the nMOS device for which W = 10 un and L = 3 un), 5 
biased with VGS = 3 V, VSB = 2 V, and VDS = 2.5 V.   
What is the body effect in MOSFET and how it can be CO1 
24  avoided?
5  K3  PO2 

Determine the current that flows in M3 of figure shown. CO2 

K3  PO3 
25  Neglect oxide encroachment and the finite output 5 
resistance of the M3.  

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SCHOOL OF ELECTRICAL & COMMUNICATION

DEPARTMENT OF ECE
 
VTU R 2015

 
For a cascode current mirror made using 15/5 devices, CO2 
26  calculate the value of the small signal output resistance 5  K3  PO2 
of the Wilson current mirror.
Calculate the small signal conductance parameters for CO1 
the nMOS device for which W = 10 un and L = 3 un), K3 
PO1 
27  biased with VGS = 3 V, VSB = 2 V, and VDS = 2.5 V. 5 
assume that VGS is decreased so that ID = 2 nA. Find  
the small-signal conductance parameters.
CO2 
28  Design a simple current reference circuit with expression 5  K3  PO2 

The ID-VDS characteristics for a MOS device Vos if CO1 

K3  PO1 
29  VSB = 2 V, 7D = 50 uA, and VflS = 1.4 V draw the 5 
graph with explanation.  
Draw the graph for Voltage References with Moderate CO2 
30  Temperature Stability.
  K3  PO2 
Estimate the variation in Io for the simple current mirror CO2 
shown below, for VSS changing from -2.4 volts to -2.6 K3 
volts.

PO1 
31  5 
 

Draw the ID-VGS characteristics of the MOS device Vos CO1 

32  if VSB = 2 V, 7D = 50 uA, and VflS = 1.4 V with 5  K3  PO2 
explanation.
Draw the graph for Voltage References with Moderate CO2 
33  Temperature Stability.
5  K3  PO1 

K1‐Remember  K2‐Understand  K3‐Apply  K4‐Analyze K5 –Evaluate  K6 –Create 
 
 
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 ECE/Exam Cell/002 
 

SCHOOL OF ELECTRICAL & COMMUNICATION

DEPARTMENT OF ECE
 
VTU R 2015

  Question Allotment 
Sl.No First name VTU No Question Date of
No Submission

1 THOPRLIKONDA VENKATESH vtu11484 1 06.04.2022

2 SAMI SATYA SRILEKHA vtu11898 3 06.04.2022

3 B PAVAN KUMAR REDDY vtu11908 5 06.04.2022

4 TADEPELLI KIREETI SUBRAMANHYA LAKSHMI vtu13068 7 06.04.2022

5 JULAPALLI SHINY SITHARA vtu13288 9 06.04.2022

6 PASUPULETI CHARAN KUMAR vtu13447 11 06.04.2022

7 SAYED IBRAHIM KHALIL vtu13448 13 06.04.2022

8 RAMESH REDDY vtu13497 15 06.04.2022

9 SRIRAMULA NIKHIL DEV vtu13529 17 06.04.2022

10 DAMACHARLA VENKATA SAI vtu13568 19 06.04.2022

11 KADIRI TEJA vtu13655 21 06.04.2022

12 TUMMALAPALLI TEJA SAI NAGA MANIKANTA vtu13682 23 06.04.2022

13 KATARI DIVYA vtu13704 25 06.04.2022

14 PULLETI JAYA SAI PAVAN vtu13790 27 06.04.2022

15 A.HARINATH REDDY vtu13813 29 06.04.2022

16 PAMULAPATI BRAHMA TEJA vtu13873 31 06.04.2022

17 LOKKU SRAVAN KUMAR vtu14013 33 06.04.2022

18 B.SAI KIRAN vtu15019 2 06.04.2022

19 K HARSHA VARDHAN vtu15027 4 06.04.2022

20 M.RAMANTH vtu15056 6 06.04.2022

21 AVAGADDA SATISH vtu15121 8 06.04.2022

22 S MUNI GANGADHAR vtu15130 10 06.04.2022

23 P.NITHISH vtu15315 12 06.04.2022

24 SHAIK MAHABOOB SUBHANI vtu15447 14 06.04.2022

25 GUDURU GANESH KUMAR RAJU vtu15449 16 06.04.2022

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 ECE/Exam Cell/002 
 

SCHOOL OF ELECTRICAL & COMMUNICATION

DEPARTMENT OF ECE
 
VTU R 2015

26 POLINENI AKILESHWAR vtu15526 18 06.04.2022

27 MUDDINENI TINKU NAGA SRIDHAR vtu15531 20 06.04.2022

28 P.GOUTHAM KUMAR vtu15666 22 06.04.2022

29 PASUPULETI NARESH vtu15744 24 06.04.2022

30 S.PRASHANTH KUMAR vtu15765 26 06.04.2022

31 BOBBA GOWTHAM REDDY vtu15772 28 06.04.2022

32 ELISETTY PAVAN KUMAR vtu15906 30 06.04.2022

33 MURUKUTI AMRUTHA vtu15946 32 06.04.2022

 
 
 

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