Electron Devices and Circuits

(EC 8353)

Prepared by
Mr.R.Suresh , AP/EEE
Ms.S.KARKUZHALI,A.P/EEE
BJT small signal model – Analysis of CE, CB,
CC amplifiers- Gain and frequency response –
MOSFET small signal model– Analysis of CS
and Source follower – Gain and frequency
response- High frequency analysis.
 BJT: Two port network, Transistor hybrid
model, determination of h- parameters,
conversion of h-parameters, generalized
analysis of transistor amplifier model using
h-parameters, Analysis of CB, CE and CC
amplifiers using exact and approximate
analysis, Comparison of transistor amplifiers.
 FET: Generalized analysis of small signal
model, Analysis of CG, CS and CD amplifiers,
comparison of FET amplifiers.
 Agenda
•Small Signal Analysis
• Hybrid h-Parameter model for an amplifier
• Hybrid Parameters or h-parameters
•Transistor Hybrid Model
•Analysis of Transistor Amplifier using Complete h- Parameter Model
•Analysis of Transistor Amplifier using simplified h-Parameter Model
 We represent the transistor amplifier circuit in
the form of a two port network as shown in
fig. • This
• two port network represent the
transistor in any one of its three
configurations (CE,CB,CC).
 Small Signal Analysis of Amplifiers
• Small signal response is analyzed using the h-parameter model
• Response of an amplifier depends on frequency considerations.

• Frequency response curves of RC Coupled amplifier , DC amplifier is

shown.
•There are 3 regions of frequency : low , mid and high
•The difference between high and low frequency is the bandwidth
RC Coupled Amplifier
DC Amplifier
 Hybrid h-Parameter model for an amplifier
 The equivalent circuit of a transistor can be dram using simple
approximation by retaining its essential features.
 These equivalent circuits will aid in analyzing transistor
circuits easily and rapidly.
 A transistor can be treated as a two part network. The terminal
behavior of any two part network can be specified by the
terminal voltages V1 & V2 at parts 1 & 2 respectively and
current i1 and i2, entering parts 1 & 2, respectively, as shown
in figure.
Two Port Network
•Of these four variables V-1, V2, i1 and i2, two can be selected as independent variables and
the remaining two can be expressed in terms of these independent variables. This leads to
various two part parameters out of which the following three are more important.
 Hybrid Parameters or h-parameters
If the input current i1 and output Voltage V2 are takes as independent variables, the input
voltage V1 and output current i2 can be written as

V1 = h11 i1 + h12 V2
i2 = h21 i1 + h22 V2

The four hybrid parameters h11, h12, h21 and h22 are defined as follows.

h11 = [V1 / i1] with V2 = 0

= Input Impedance with output part short circuited.

h22 = [i2 / V2] with i1 = 0

= Output admittance with input part open circuited.

h12 = [V1 / V2] with i1 = 0

= reverse voltage transfer ratio with input part open circuited.

h21 = [i2 / i1] with V2 = 0

= Forward current gain with output part short circuited.

The dimensions of h – parameters are as follows:

h11 - Ω
h22 – mhos
h12, h21 – dimension less.

as the dimensions are not alike, (i.e) they are hybrid in nature, and these
parameters are called as hybrid parameters.
The Hybrid Model for Two-port Network:-

V1 = h11 i1 + h12 V2
I2 = h1 i1 + h22 V2
↓
V1 = h1 i1 + hr V2
I2 = hf i1 + h0 V2
The Hybrid Model for Two-port Network:-
 Transistor Hybrid Model
Use of h – parameters to describe a transistor have the following advantages:
•h – parameters are real numbers up to radio frequencies .
•They are easy to measure
•They can be determined from the transistor static characteristics curves.
•They are convenient to use in circuit analysis and design.
•Easily convert able from one configuration to other.
•Readily supplied by manufactories.
 Transistor Hybrid Model CE Configuration

In common emitter transistor configuration, the input signal is applied between the base
and emitter terminals of the transistor and output appears between the collector and emitter
terminals. The input voltage (Vbe) and the output current (ic) are given by the following
equations:
Vbe = hie.ib + hre.Vc
ie = hfe.ib + hoe.Vc
Transistor Hybrid Model CE Configuration
 Transistor Hybrid Model CB Configuration

Where hie =(∂f1/∂iB)Vc = (∂vB/∂iB)Vc = (ΔvB /ΔiB)Vc = (vb / ib)Vc

hre =(∂f1/∂vc)IB = (∂vB/∂vc) IB = (ΔvB /Δvc) IB = (vb /vc) IB

hfe =(∂f2/∂iB)Vc = (∂ic /∂iB)Vc = (Δ ic /ΔiB)Vc = (ic / ib)Vc

hoe= (∂f2/∂vc)IB = (∂ic /∂vc) IB = (Δ ic /Δvc) IB = (ic /vc) IB

The same theory is extended to other configurations including CB and CC

Hybrid Model and Equations for the transistor in three different
configurations are are given below.
 Analysis of Transistor Amplifier using Complete h-
Parameter Model
In the h-parameter model consider the load Resistance RL and input signal Vs. The
expressions for Current gain, Voltage gain ,input and output impedance are:
1. Current Gain:
Ai=-hf/(1+hoRL)

Where Ai is the current amplification or current gain

The overall current gain taking source resistance is given by:
Ais=Ai * (Rs/Zi + Rs)
where
Zi input impedance
Rs source resistance
 Analysis of Transistor Amplifier using Complete h-Parameter Model

2)Input Impedance(Zi)
Zi= hi+hrAiRL

3) Voltage Gain(Av):
Av=(Ai * RL)/ Zi
Voltage gain taking source resistance is given by
Avs=(Av * Zi)/(Zi+Rs)

4) Output Admittance(Yo)
Yo=ho-hf * hr/(hi+Rs)
 Analysis of Transistor Amplifier using simplified h-
Parameter Model
Common Emitter Configuration
Fixed Bias configuration:
Input Impedance Zi = RB || hie
Output Impedance Zo=RC || (1/hoe)
Voltage gain Av=-hfe * (RC || (1/hoe) /hie
Current Gain Ai=hfe * RB/(RB + hie)

Voltage Divider Configuration:

Input impedance Zi=(RB1 || RB2)|| hie
Output Impedance Zo=RC ||(1/hoe)
Voltage gain Av=-hfe * [RC || (1/hoe)]/hie
Current gain Ai=hfe * (RB1||RB2)/(RB1|| RB2) + hie
 Hybrid Equivalent Model

The hybrid parameters: hie, hre, hfe, hoe are developed and used to model the
transistor. These parameters can be found in a specification sheet for a transistor.

25
Vi  h11Ii  h12 Vo
Vi
h11 
Ii Vo  0V

Vi
h12 
Vo Vo  0V

IO  h21Ii  h22 Vo
Solving Vo  0V ,
Ii
h21 
Io Vo  0V

Io
h22 
Vo Io  0A

H22 is a conductance!
26
 General h-Parameters for any
Transistor Configuration

hi = input resistance
hr = reverse transfer voltage ratio (Vi/Vo)
hf = forward transfer current ratio (Io/Ii)
ho = output conductance
27
28
29
 Simplified General h-Parameter Model
The model can be simplified based on these approximations:

hr  0 therefore hrVo = 0 and ho   (high resistance on the output)

Simplified

30
 Common-Emitter re vs. h-Parameter Model

hie = re
hfe = 
hoe = 1/ro

31
Common-Emitter h-Parameters

hie  re [Formula 7.28]

h fe   ac [Formula 7.29]

32
 Common-Base re vs. h-Parameter Model

hib = re
hfb = -
33
Common-Base h-Parameters

hib  re [Formula 7.30]

h fb    1 [Formula 7.31]

34
 SMALL-SIGNAL LOW-FREQUENCY
OPERATION OF TRANSISTORS
Hybrid Parameters and Two-Port Network
For the hybrid equivalent model to be described, the parameters are
defined at an operating point that may or may not give an actual picture
of the operating condition of the amplifier. The quantities hie , hre , hfe
and hoe are called the hybrid parameters and are the components of a
small-signal equivalent circuit. The description of the hybrid equivalent
model begins with the general two-port system.

Two-port system representation (Black

model realisation)
 EQUIVALENT CIRCUITS THROUGH
HYBRID PARAMETERS
AS A TWO-PORT NETWORK
For the transistor, even though it has three basic configurations, they are all four-
terminal configurations, and thus, the resulting equivalent circuit will have the same
format. The h-parameter will however change with each configuration. To distinguish
which parameter has been used or which is available, a second subscript has been
added to the h-parameter notation.
(i) For the common-base configuration: the lower case letter b
(ii) For the common-emitter configuration: the lower case letter e
(iii) For the common-collector configuration: the lower case letter c

Complete hybrid equivalent model

TRANSISTOR AS AMPLIFIER

An n–p–n transistor in the common-base bias

mode
EXPRESSIONS OF CURRENT GAIN, INPUT
RESISTANCE, VOLTAGE
GAIN AND OUTPUT RESISTANCE
The h-parameter equivalent circuit of a transistor amplifier having a voltage source Vg
, with its input resistance Rg connected to the input terminals and a load resistance RL
connected to the output terminals.

h-Parameter equivalent circuit of a transistor

EXPRESSIONS OF CURRENT GAIN, INPUT
RESISTANCE, VOLTAGE
GAIN AND OUTPUT RESISTANCE
Current Gain (AI)

Input Resistance (RI)

EXPRESSIONS OF CURRENT GAIN, INPUT
RESISTANCE, VOLTAGE
GAIN AND OUTPUT RESISTANCE
Voltage Gain:- Voltage gain or voltage amplification is defined as the
ratio of the output voltage V2 to the input voltage V1.
Where,

Output Resistance (RO)

 FREQUENCY RESPONSE FOR CE
AMPLIFIER WITH AND WITHOUT
SOURCE IMPEDANCE
At different frequencies of the input signal, the performance of the device is
different. The analysis till now has been limited to the mid-frequency spectrum.
Frequency response of an amplifier refers to the variation of the magnitude and
phase of the amplifier with frequency.

a) Gain vs. frequency for a

CE amplifier (b) Phase angle
vs. frequency for a CE
amplifier
 EMITTER FOLLOWER
The emitter follower transistor is a design which is basically a CC amplifier.

Current gain:

Input resistance:

Voltage gain:

Output resistance An emitter follower

configuration with biasing

The emitter follower is used for impedance matching.

Figure Small-signal equivalent circuit for FETs.
Figure FET small-signal equivalent circuit that accounts for the dependence of iD on vDS.
Figure Determination of gm and rd. See Example 5.5.
Figure Common-source amplifier.
For drawing an a c equivalent circuit of
Amp.
•Assume all Capacitors C1, C2, Cs as
short circuit elements for ac signal
•Short circuit the d c supply
•Replace the FET by its small signal model
 A C Equivalent Circuit

Simplified A C Equivalent Circuit

v
Voltage gain, A  o
v v
gs
v  i R  g v R Input imp., Z R R R
o o L m gs L in G 1 2
v
r R
 A  o  g R , R  R r Out put imp., Z  r R  d D
v v m L L D d o d D r R
gs d D
 Av  gm(rd || RD)

This is a CS amplifier configuration therefore the

input is on the gate and the output is on the Zi  R1 || R2
drain.

Av  gm(rd || RD) Zo  rd || RD
Zo  RD
rd 10R D
Av  gmRD,  r  10R
d D
Figure vo(t) and vin(t) versus time for the common-source amplifier of Figure 5.28.
An Amplifier Circuit using MOSFET(CS Amp.)

Figure Common-source amplifier.

 A small signal equivalent circuit of CS Amp.

Figure Small-signal equivalent circuit for the common-source amplifier.

Figure vo(t) and vin(t) versus time for the common-source amplifier of Figure 5.28.
Figure Gain magnitude versus frequency for the common-source amplifier of Figure 5.28.
Figure Source follower.
Figure Small-signal ac equivalent circuit for the source follower.
Figure Equivalent circuit used to find the output resistance of the source follower.
Figure Common-gate amplifier.