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Unit 3
Dr Gnanasekaran Thangavel
Professor and Head
Electronics and Instrumentation
Engineering
R M K Engineering College
UNIT III AMPLIFIERS
5
Two Port Network
6
Hybrid Equivalent Circuit for BJT
V1 h11 h12 I1
=
I2 h21 h22 V2
7 ENGI 242/ELEC 222 January 2004
Hybrid Parameter Model
Ii Io
Ii Io
1 2
hi
Vi hrVo hfIi ho Vo
1' 2'
As the dimensions are not alike, (i.e) they are hybrid in nature, and
these parameters are called as hybrid parameters.
hi = input resistance
hr = reverse transfer voltage ratio (Vi/Vo)
hf = forward transfer current ratio (Io/Ii)
ho = output conductance
12
Common emitter hybrid equivalent circuit
13
Common base hybrid equivalent circuit
14
h-parameter Model for Common Emitter
β vπ
ic = = gm vπ
rπ
20 ENGI 242/ELEC 222 January 2004
Hybrid Pi Relationships
Semiconductors
Doping
• n-type material
• p-type material
pn-Junctions
• forward, reverse, breakdown
• solar cells, LEDs, capacitance
Analysis of CS and Source follower
https://www.youtube.com/watch?v=IvoYMykaRWM
https://www.youtube.com/watch?v=4QBs3k4AZI8
References
1. David A. Bell ,”Electronic Devices and Circuits”, Prentice Hall of India,.
2. ux.brookdalecc.edu/fac/engtech/andy/engi242/powerpoint/doc/08_bjt_model.ppt
3. sietkece.com/wp-content/uploads/2016/08/EDC-PPT5.ppt
4. https://vturemedybalaji.files.wordpress.com/2016/02/electronic-circuits_unit-4.ppt