EC8353 ELECTRONIC DEVICES AND CIRCUITS

Unit 3

Dr Gnanasekaran Thangavel
Professor and Head
Electronics and Instrumentation
Engineering
R M K Engineering College
 UNIT III AMPLIFIERS

BJT small signal model – Analysis of CE, CB, CC

amplifiers- Gain and frequency response – MOSFET
small signal model– Analysis of CS and Source follower
– Gain and frequency response- High frequency
analysis. https://www.youtube.com/watch?v=jZ-pD8nVD6s
https://www.youtube.com/watch?v=Vd5cxAS-lpg
https://www.youtube.com/watch?v=3m2_p3SFWdQ

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 BJT small signal model
https://www.youtube.com/watch?v=NESchIntkR8
Definition
Small-signal modeling is a common analysis technique in
electronics engineering which is used to approximate the
behavior of electronic circuits containing nonlinear devices
with linear equations.
It is applicable to electronic circuits in which the AC signals,
the time-varying currents and voltages in the circuit, have a
small magnitude compared to the DC bias currents and
voltages.
A small-signal model is an AC equivalent circuit in which the
nonlinear circuit elements are replaced by linear elements
3 whose values
Dr Gnanasekaran Thangavel are given by the first-order (linear)
7/11/2018
 The hybrid parameter model for Transistor
 The transistor is two port device with one terminal being
common to both the input and the output
 The behavior of the two port network is analyzed using the
current and voltage parameters of the ports.
 Out of the four parameters two are considered
independent and the remaining two are dependent and
they are expressed in terms of the independent
parameters.
 Consider a generalized two port network
 Two Port Network

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 Two Port Network

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 Hybrid Equivalent Circuit for BJT

V1 h11 h12 I1
=
I2 h21 h22 V2
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Hybrid Parameter Model
Ii Io

Vi Linear Two port Device Vo

Ii Io
1 2
hi
Vi hrVo hfIi ho Vo

1' 2'

Vi  h11 I i  h12Vo  hi I i  hrVo

I o  h21 I i  h22Vo  h f I i  hoVo
h-Parameters
Vi Vi
h11  h12 
Ii Vo  0 Vo Ii  0
Io Io
h21  h22 
Ii Vo  0 Vo Ii  0
h11 = hi = Input Resistance
h12 = hr = Reverse Transfer Voltage Ratio
h21 = hf = Forward Transfer Current Ratio
h22 = ho = Output Admittance
 The dimensions of h – parameters
h11 - Ω
h22 – mhos
h12, h21 – dimension less.

As the dimensions are not alike, (i.e) they are hybrid in nature, and
these parameters are called as hybrid parameters.

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 Transistor Hybrid Model - Advantages
• Use of h – parameters to describe a transistor have the following
advantages:
• h – parameters are real numbers up to radio frequencies .
• They are easy to measure
• They can be determined from the transistor static characteristics curves.
• They are convenient to use in circuit analysis and design.
• Easily convert able from one configuration to other.
• Readily supplied by manufactories.

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 General h-Parameters for any Transistor Configuration

hi = input resistance
hr = reverse transfer voltage ratio (Vi/Vo)
hf = forward transfer current ratio (Io/Ii)
ho = output conductance
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 Common emitter hybrid equivalent circuit

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 Common base hybrid equivalent circuit

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 h-parameter Model for Common Emitter

Parameters from the spec sheet (x = lead based on circuit configuration):

h11 = hix
h12 = hrx
h21 = hfx
h22 = hox
hrx and hfx are dimensionless ratios
hix is an impedance <>
15 hox is an admittance <S>
 HYBRID MODEL PI

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 HYBRID MODEL PI PARAMETERS
 Parasitic Resistances
 rb = rb’b = ohmic resistance – voltage drop in base region caused by
transverse flow of majority carriers, 50 ≤ rb ≤ 500
 rc = rce = collector emitter resistance – change in Ic due to change in
Vc, 20 ≤ rc ≤ 500
 rex = emitter lead resistance
 important if IC very large, 1 ≤ rex ≤ 3

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 HYBRID MODEL PI PARAMETERS
 Parasitic Capacitances
 Cje0 = Base-emitter junction (depletion layer) capacitance, 0.1pF ≤
Cje0 ≤ 1pF
 C0 = Base-collector junction capacitance, 0.2pF ≤ C0 ≤ 1pF
 Ccs0 = Collector-substrate capacitance, 1pF ≤ Ccs0 ≤ 3pF
 Cje = 2Cje0 (typical)
 0 =.55V (typical)
 F = Forward transit time of minority carriers, average of lifetime of
holes and electrons, 0ps ≤ F ≤ 530ps

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 HYBRID MODEL PI PARAMETERS
 r = rb’e = dynamic emitter resistance – magnitude varies to give
correct low frequency value of Vb’e for Ib
 r = rb’c = collector base resistance – accounts for change in
recombination component of Ib due to change in Vc which causes a
change in base storage
 c = Cb’e = dynamic emitter capacitance – due to Vb’e stored charge
 c = Cb’c = collector base transistion capacitance (CTC) plus Diffusion
capacitance (Cd) due to base width modulation
 gmV = gmVb’e = Ic – equivalent current generator

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 Hybrid Pi Relationships
IC
gm =
VT
kT
VT = = 26mV @ 300K
q
IC
gm =
26mV
(26mV) () 26mV
r = =
IC IB
 = gm r

β vπ
ic = = gm vπ
rπ
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 Hybrid Pi Relationships

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 HYBRID MODEL PI MID BAND

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 HYBRID MODEL PI HIGH FREQ.

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 Common Emitter Amplifier

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 Common Emitter Amplifier – DC Bias Model

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 Common Emitter Amplifier - Complete Hybrid PI

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 Mid Band Hybrid PI Common Emitter

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 Equivalent Circuit to find ZO

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 High Frequency Hybrid PI CE Amp

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 Common Emitter Amplifier

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 CE Amplifer Example output

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 Common Emitter Amplifier

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 CE Amplifer Example output

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 Emitter Follower

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 Emitter Follower

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 Emitter Follower

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 Emitter Follower

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 Emitter Follower

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 Common Base

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 Common Base

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Analysis of CE, CB, CC amplifiers
https://www.youtube.com/watch?v=QupXV7rcDIA
 MOSFET small signal model
https://www.youtube.com/watch?v=GQ-inadbdrg

 Semiconductors

 Doping
• n-type material
• p-type material

 pn-Junctions
• forward, reverse, breakdown
• solar cells, LEDs, capacitance
Analysis of CS and Source follower
https://www.youtube.com/watch?v=IvoYMykaRWM
https://www.youtube.com/watch?v=4QBs3k4AZI8
 References
1. David A. Bell ,”Electronic Devices and Circuits”, Prentice Hall of India,.
2. ux.brookdalecc.edu/fac/engtech/andy/engi242/powerpoint/doc/08_bjt_model.ppt
3. sietkece.com/wp-content/uploads/2016/08/EDC-PPT5.ppt
4. https://vturemedybalaji.files.wordpress.com/2016/02/electronic-circuits_unit-4.ppt

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 Other presentations
http://www.slideshare.net/drgst/presentations

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 Thank You

Questions and Comments?

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