Conventional Question

EE (Test-3),Practice Programe
Objective Solutions, 12th March 2016 (1)
Date: 12th March, 2016

ANSWERS
1. (d) 21. (d) 41. (a) 61. (b) 81. (a) 101. (d)

2. (d) 22. (a) 42. (d) 62. (c) 82. (c) 102. (c)

3. (a) 23. (b) 43. (c) 63. (a) 83. (d) 103. (b)

R
4. (b) 24. (a) 44. (C) 64. (d) 84. (a) 104. (a)

5. (d) 25. (a) 45. (d) 65. (b) 85. (d) 105. (d)

E
6. (b) 26. (b) 46. (b) 66. (b) 86. (c) 106. (c)

7. (a) 27. (c) 47. (b)

T
67. (c) 87. (a) 107. (b)

8. (d) 28. (b) 48. (d)

S 68. (b) 88. (b) 108. (c)
A
9. (c) 29. (d) 49. (b) 69. (c) 89. (a) 109. (a)
M

10. (a) 30. (a) 50. (d) 70. (d) 90. (d) 110. (a)

11. (d) 31. (d) 51. (d) 71. (d) 91. (c) 111. (a)

12. (b) 32. (d) 52. (d) 72. (d) 92. (c) 112. (d)
S

13. (c) 33. (d) 53. (a) 73. (a) 93. (b) 113. (a)
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14. (d) 34. (a) 54. (d) 74. (d) 94. (d) 114. (b)

15. (c) 35. (c) 55. (c) 75. (b) 95. (c) 115. (d)

16. (d) 36. (b) 56. (a) 76. (b) 96. (c) 116. (a)

17. (b) 37. (a) 57. (a) 77. (a) 97. (c) 117. (d)

18. (b) 38. (d) 58. (b) 78. (d) 98. (b) 118. (b)

19. (a) 39. (c) 59. (b) 79. (a) 99. (b) 119. (a)

20. (c) 40. (a) 60. (b) 80. (d) 100. (d) 120. (a)
(2) EE (Test-3), Objective Solutions, 12th March 2016

1. (d) 2
 500 
= 108mH  
m =  r  1  600 
= 6.5 – 1 = 75 mH.
= 5.5
7. (a)
M = mH = 5.5 10a x  25a y  40a z  A m The electric field induced depends on area,
= 55ax + 137.5ay – 220az A/m. magnitude and rate of change of flux and number
dB
2. (d) of turns, e  NA . These are same in both
dt
  cases, both will have same induced voltage.
F = q(V  B)
    8. (d)
F is perpendicular to both V and B and V
 Number of revolutions = 1800/60
and B can make any angle.
= 30 r.p.s

R
3. (a) 1
t = sec
N 30
L=
I 

E
e=
LI t
 =
N 25    104

=
8  103  5  10 3
400
T =
1/ 30
 0.23 V.
S
= 10–7 wb.
9. (c)
4. (b) The path indicates that charge is negative.
A
Applying amperes circuital law, we get a magnetic
10. (a)
field outside and no magnetic field inside
Current flowing i
M

Pipe Leakage coefficient =  .

g

11. (d)
No magnetic filed

5. (d) a  r 2 = 2
 1.25103   4.91  10 6 m 2
S

 0.6  10 5
d Bair =   1.22T
e=  a 4.19  10 6
dt
Bair 1.22
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d Hair = 
=  (6t 2  7t  8) 0 4   107
dt
= – (12t + 7) = 9.71  105 AT / m .
= – (12 × 2 + 7) 12. (b)
= –31 mV. Magnetic field density at the centre due to
6. (b) circular loop.

 L  N2 Idl
2 B
L2  N2 
=  
L1  N1  O I

2
N 
L2 = L1  2 
 N1 
 EE (Test-3), Objective Solutions, 12th March 2016 (3)
Applying Biot-Savart law, =  sin aˆ x  cos aˆ y
0 I
 dB dl 4 3
4 r 2 
=
=  aˆ x  aˆ y A m .
5 5
0 I 14. (d)
 B= .2r
4 r 2 y
 I
= 0 B
2r (0, 1, 0)
(1/2, 1/2)
1 HB
 B
r HA A
x
BLoop A rB 2a (1, 0, 0)
So,    2 :1
BLoop B rA a
zr

R
2a
1 1 
Since the point  , , 0  comes at the mid
2 2 
O a I

E
I point on the line joining (0, 1, 0) and (1, 0, 0)
A where conductors are located,

T
B 1 1 
Magnetic field at  , , 1  by conductor ‘A’’
13. (c) 2 2 
and that of conductor ‘B’ are equal and opposite
z
S to each other.
A
1 1
So, Net magnetic field at  , , 1   0 .
2 2 
y
15. (c)
M


Since,   H  J c  J d
x 
So, the unit of   H will be similar to current
According to Ampere’s Law.
density J c or, J d i.e. (Ampere)/(meter)2.
 I
S

H = â 16. (d)
2 
where  is the perpendicular distance of point Magnetic field experienced by the loop due to
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infinite conductor.
from conductor.
y  0 I2
B=
2r
where r is the distance from infinite conductor
 
(–3, 4) 4 and force, F  il  B  ilBsin 
â   0 a
x
3 I
F3
F2 F a
B 4
F1
Hence,    3 2   4 2  02  5 I1 a
 10 I2
So, H = â 
2  5
 0I1I2a
= 1.aˆ  here, F1 =
2a
[away from conductor]
(4) EE (Test-3), Objective Solutions, 12th March 2016
 0I1I2a 1
and F3 = 2    H = 2r
2a
[towards the conductor] I
r=
2 H
Since, F2 and F4 are equal in magnitude and
1 1
cancel each other. = = m.
2 1 2
    0I1I2
So, FNet = F1  F3  20. (c)
4
For dielectric material,
[away from conductor].
D =  0E  P
17. (b)
  0 rE =  0E  P
According to Ampere’s law, the line integral of
  P =  0  r  1 E
H and dl over a closed path is equal to the
current enclosed in that loop.  0  eE =  0  r  1 E

R

 
i.e.  H.dl = Inclosed   e = r  1 .
= –10A

E
21. (d)
Here, negative sign appears as the dot product • All ferroelectric materials are piezoelectric and
 
of H due to current enclosed by loop and dl also, it has pyroelectric effect after a certain
is negative.

18. (b) T or critical temperature.

S
According to Biot-Savart Law. Ferro Pyro- Piezo-
  electric electric electric

A
I  dl
dH =
r2
• Ferroelectric materials are characterized by
M

parallel alignment of dipoles. Due to parallel

dipole arrangement, these materials are having
large amount of spontaneous polarization.
  90 • Ferroelectric material posses centre of
symmetry.
S

Idl
22. (a)
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Crystal system Unit cell dimension Angle between Axis

So, magnetic field intensity at the centre of Orthor hombic abc       90
semicircle. Triclinic abc       90
idl sin 90 Hexagonal abc     90,   120
So, dH = Cubic abc       90
4 R 2
i.dl 23. (b)
dH =
4 R 2 The relation between dielectric loss and frequency
i is
H =  dH  dl
4 R 2 
So,
 2   
P  f  P  v 2fC r 
i  r  
=  R
4 R 2
so as frequency is doubled, the power loss is
i doubled.
= .
4R
24. (a)
19. (a) Bandgap energy (Eg) of different materials is given
below :
 EE (Test-3), Objective Solutions, 12th March 2016 (5)
Metals : Eg  0 eV as both the conduction band 27. (c)

and valance band overlap tan (loss tangent) is given by formula

Insulators : Eg > 3 eV r 
tan  =  0.004
r 
Semiconductors: Eg  1 eV .
Given that r  = 5
25. (a) r  = tan  r 
= 0.004 × 5
= 0.02
r = 5 – j0.02.

28. (b)

Since, p = E

R
where p is dipole moment
2a  is polarizability
Simple cubic structure E is electric field intensity

E
Atom is placed at the corner of each cubic shell. p q.d
  = 
Volume of atom in one cubic shell E V d

T
APF =
Volume of unit shell
q 2
= .d
1 4  V
8    r 3 
=
8 3 
S = C.d2
 a 3 = (Farad) .(meter)2.

A
= 0.52 29. (d)
6
• All ferroelectric materials are piezoelectric
where r = radius of atom
materials but all piezoelectric materials are
M

a = side of unit shell not ferroelectric materials.

Here a = 2r. • Quartz is only piezoelectric material, it is
26. (b) not a ferroelectric material.
Steps to find Miller indices : 30. (a)
S

i) Find the intercepts of the plane on the three Energy stored in polarizing the dielectric
crystal axes (OX, OY, OZ) as (pa, qb, rc);
1 1
where a, b, c are corresponding primitives W = CV 2  C0 V 2
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and p, q, r be integer. 2 2
ii) Write the reciprocal of the number p, q, r as where, C is capacitance after polarization,
& C0 is capacitance before polarization
1 1 1
, , .
p q r 1  0r A 0 A  2
 W =   V
2 d d 
iii) Find the LCM of their denominator.
1 A
iv) Multiply the reciprocals by the LCM, to get = 0  V 2 r 1 
Miller Indices. 2 d
2
Here 1 V
= 0   Ad     r 1
i) Intercepts are (4, 1, 2) 2 d
 Energy stored per unit volume
1 1
ii) reciprocals : , 1, W
4 2 1 2
E  0 r 1 
iii) LCM of 4, 1, 2 is 4  Ad  = 2
Energy stored 1
1 1 = EP .
iv) Miller indices are  4, 1 4,  4  1,4,2 Volume 2
4 2
(6) EE (Test-3), Objective Solutions, 12th March 2016
31. (d) P
EL = E  
As, fermi level for P-type semiconductor, 0

nV For solids and liquid having cubic symmetry,

EF = EV  KT log e
NA 1
 =
where, 3
EV = maximum energy of valence band in eV. P
So, EL = E  .
nV = no. of electrons in valence band, 3 0
NA = concentration of acceptor atoms. i.e.
36. (b)
Dielectric loss in dielectric,
Conduction band
1
t =  0´´r E02 Watt m3
2
So, dielectric loss depends on the imaginary

R
part of complex dielectric constant.

37. (a)

E
Fermi level for
Since, polarization, P = Np
P-type semiconductor   0  e E = N E

Valence band

T

N
e = 
0
S
32. (d) N
 r  1 = 
Since, Loss tangent 0
A
"r N
 r = 1  .
tan  = ' 0
r
M

38. (d)
 "r = 'r  tan 
= 2.5 × 0.004 For body centered cubic lattice;
= 0.0100
As, complex relative dielectric constant is,
S

*r = 'r  j"r 3a

= 2.5 – j 0.01.
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33. (d)
Some examples of ferroelectric materials: a
Rochelle salt : NaKC4H4O6 4H2O The atomic radius; 4r  3a
KDP (Potassium : KH2PO4
dihydrogen phosphate) 3a
 r=
ADP (Ammonium : NH4H2PO4 4
dihydrogen phosphate) Number of atoms per unit volume
Barium Titanate : BaTiO3
 1
Calcium Titanate : CaTiO3 = 8   1
 8
Ammonium iron alum : NH4Fe(SO4)2.12H2O
=2
34. (a)
Atomic packing factor :
35. (c) 4
2  r 3
On the application of the field E, the modified = 3
field due to polarization P is given by a3
 EE (Test-3), Objective Solutions, 12th March 2016 (7)
3 48. (d)
8  3a 
= 
3  4  A UJT can be used for all the three purposes.

= 0.68 i.e. 68%. 49. (b)

39. (c) SCR is a current driven device.

The electronic polarizability 50. (d)

 e = 4  0R 3 . • BJT is a current driven device.
• MOSFET is a voltage driven device.
40. (a)
51. (d)
41. (a)
Thyristor opens if holding current IH
P  30  1.5  45 W
goes below 5mA. 0.7V is the drop out
Thermal resistance = 0.6 °C/W point.
Temperature rise = 45 × 0.6 = 27°C

R
Junction temperature = 27° + 90° = 117°C V = 0.7   5  10 3  1.5  103 
= 8.2V.
42. (d)

E
1 52. (d)
IL =  Vdt
L Pavg

T
Pmax  f T
V  Tg 50  6  10 6 ON
= 
L 0.2 TON
 f TON
= 1.5 mA.
S Duty cycle,  =
T
43. (c) Pavg 100
Pmax    250 W .
A
Germanium has high leakage current as  0.4
compared to silicon SCR at room temperature.
53. (a)
M

44. (C) 1
Pulse repetative rate =
A RC in series is placed across SCR in order to 2.5  103
protect if from high dv/dt. It is also called snubber = 400 s
circuit. Space ratio = 1/10
45. (d) 400
S

Pulse width =  36.4s

The maximum voltage that can be applied will 11
be in accordance with thyristor having lower PIV. As the pulse width is more than 20s , so the
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SCR will turn on.

650
V  229.8  230 V
2 2 54. (d)

46. (b) Vm  VB
Im =
Secondary breakdown occurs in BJT not in IGBT. 1K

47. (b) 12V  4V

=
Anode 1K
= 8 mA.

55. (c)
Gate
56. (a)
Applying KVL, we have
 VA   IA  50   1  0
Cathode
MCT- MOS controlled Thyristor
(8) EE (Test-3), Objective Solutions, 12th March 2016
V 1 armature winding is alternating and hence eddy
IA  A ; given IA = 2 × 10–3 for OFF.. current losses takes place in both armature and
50
pole face.
VA  1
2  10 3 =  V A  1.1V
50 65. (b)

57. (a) For dc series motor

For proper turn off OFF of SCR, the anode voltage T = KIa
should be reversed and the anode current should Under linear region of BH curve
be less than holding current.
T  I2a
58. (b) But under saturation,  does not change with Ia
The turnoff time is the minimum value of time Hence T  Ia
interval between the instants when the on state Therefore, 10 % increase in Ia will result is 10 %
current has decreased to zero and the instant increase in torque.
when the thyristor is capable of with standing

R
forward voltage without turning-ON. 66. (b)
For lap wound machine = No. of poles
59. (b) = No.of parallel paths

E
Gate terminal in SCR losses control over anode No. of armature turns = 200  2  400
circuit voltage and current once the SCR starts
400
conducting forward current.

60. (b)
T
Nol. of armature turns per path 
4
Resistance of each path  100  0.04  4 
 100
S
A surge curent rating is one of the many rating 4
specifications of an SCR. It is maximum non- Resistance of armature circuit   1 .
4
repetitive current with sine wave.
A
67. (c)
61. (b)
When DC machine runs as motor,
The turn-off time of line commutation is between
M

10 & 100  sec and that of forced is between 7 Eb1 = V – IaRa

& 20  sec . = 240 – 20  2
62. (c) = 200 V
For building up of voltage at the terminal of dc When DC machine runs as generator,
shunt motor the field circuit resistance should
S

Eb2 = V  IaRa
be less than the critical resistance.
= 240  20  2
63. (a) = 280 V
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Eb = V – IaRa Eb2  Eb1 = 280  200  80 V .

At starting Eb = 0
0 = V – IaRa 68. (b)

V = IaRa For reversal of direction of a dc shunt motor

either field flux or armature flux has to be
240 reversed. Hence either field or armature terminal
Ra =  120 
20 need to be interchanged.
Ra = Rse + (Ra+ Rf) 69. (c)
120 = Rse + 2
T   Ia  Ia2 (series motor   Ia )
Rse = 120 – 2
T2 Ia22
= 118 
T1
= I2
64. (d) a1

In a dc motor, due to the presence of commutator

 202 
and brush system, the current flowing in the T2 = T1  2 
 10 
 EE (Test-3), Objective Solutions, 12th March 2016 (9)
= 20 Nm × 4  Total No. of conductor 
= 80 Nm.
 Ia A 
 2 
=
Pole
70. (d)
 50   720 
71. (d)   
=  6   2  [ lap winding, A= P]
Ia = IL + If 6
200 = 500AT
= 100  And the shape of armature reaction mmf
100
= 102 A is triangular as shown in figure below,
Eg = V + IaRa
= 200 + 102 × 0.01
= 201.02 V.

72. (d)

R
N S
Commutator in a d.c. machine is used to convert
a.c. to d.c. The number of segments decide the

E
d.c. output wave smoothness. armature
mmf
wave
73. (a) pattern

T
Brushes in the dc machines are used to collect
the current. Current produced in the armature
winding is passed on to the commutator and
then to the external circuit by means of brushes.
S
76. (b)
Brushes are made of carbon. Shunt motor is a constant speed drive. Series
A
motor can be considered as constant power drive
74. (d)
1
I Ish N
T
M

Ra TN = Constant
Ia
220 V DC Rsh • Cummulative compound,
M
 = sn  se
S

and as load increases, Ia increases, so se

220 220 increases as N  1  , when  increases speed
Ish = R  220  1A
sh decreases. Cummulative differential :
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220  210  = sn  d se

Ia = Ra
 As load increases, se increases and 
10 decreases, so speed increase.
=  20 A
0.5
I = Ish + Ia 77. (a)
= 20 + 1 = 21 A. Compensating winding is used to reduce the
effect of armature reaction by balancing the
75. (b) armature mmf. So, these winding should be
Armature reaction per pole connected is series with the armature winding.
The direction of the current in the compensating
 current in a 
    no. of turns  winding must be opposite to that in the armature
 armature conductor 
= winding just below the pole faces.
pole
The interpole winding is also connected in series
with the armature winding, so that the armature
flux in the commutating zone which tends to
(10) EE (Test-3), Objective Solutions, 12th March 2016
shift the magnetic neutral axis, is neutralised by 82. (c)
an appropriate component of interpole flux. Wave winding would have some slots vacant
78. (d) and this would creat mechanical imbalances.
So dummy coils are placed to balance the rotor
Due to the problem of interruptiong highly
mechanically.
inductive field current and time needed for the
field current to build up in opposite direction, it 83. (d)
is common practice to reverse armature
Complete rotation of mechanical angle = 360°
connections.
P
79. (a) Electrical angle = 300   
2
N2 Ea2 1 P
=  So, elec =  mech  .
N1 Ea1  2 2
1Ia1  2Ia2  Torque cons tan t  84. (a)

R
 1  When switch was open, total charge q
Ia2 = 40x  x   
 2 = C1 V1

E
Ea1 = 220  40  0.5  200
Let after closing the switch; voltage across
Ea2 = Vt  Ia2Ra  220  40x  0.5
parallel combination is V.
=  200  20x  V
Speed is increased by 50%
T t0
S
N2 3
N1 = 2 C1 C2 V
A
3 220  20x
= x
2 200
As charge will be conserved.
 x 2  11x  15 = 0
M

x = 1.6 Now, q = Ceq.V



   2   1.6  1 
ie. C1V1 =  C1  C2  V
  1   100     100  37.5% .
 1   1.6  C1V1
V = .
C1  C2
S

80. (d)
85. (d)
Compensating winding in a dc machine is used
for neutralizing crosmagnetising effect. Current in the above circuit depends on current
IE

81. (a) source only.

Pout = VIa VRL  I x RL = 2 x 5  10V .

Armature copper loss = I2a R a 86. (c)

Total inoput power = Pi  VIa  Ia2 R a  PC Let diode is ON; Applying KVL in the loop.

Pout V  4i  3 = 0
Efficiency =   P
in  V = 4i  3

VIa Slope = 4
= VI  I2 R  P for
a a a C V  3V  i = 0
for V  3V  i = 0.
d PC
For  to be maximum dI  0  I  R .
u a 87. (a)

For the given Circuit,

 EE (Test-3), Objective Solutions, 12th March 2016 (11)

R th =
2 x1 2
 
 R1  R2  R1L2  R2L1  = 0
21 3
R1  R2  0 i.e. R1  R 2
So time constant,
R1 L1
2 R1L2  R2L1  0 i.e.  .
 = CR  C sec R2 L2
3
t 89. (a)
Then, V  t  = V    1  e  
M  10mH
30
 1  t
 
=  1  2 x 3  1  e  i t 
 
= i  e 
t 60V V2  t 
 20mH

 to
i1  t 
at t = t0  V  to  = 1  e  =2
di1  t 

R
 to
e  = 1 V2  t  = M.
dt
dv  t   1  to 1  t/ 
Now, =   e   e d  60
3

x103 t 


E
dt  t  = 10x10 3 x  1 e 2 
dt  30 
dv  t o  1  to  1
 = .e    10 3

T
3
dt t  = 10  10  2   103.e1500t volts
2
1 2 1
  =  C  = 30e1500t volts .
10 3 10
3
S 90. (d)
 C =  0.15F .
20
A
At t  0 , Capacitor acts as short circuit
88. (b)
and inductor acts as open-circuit
M

Let individual time constant are 1 & 2 R

L1 L I
1  and 2  2
R1 R2
V
After series combineation,
S

eq = L1  L2

and Req = R1  R2 V
IE

I =
R
 equivalent time constant
At t   capacitor acts as open-circuit and
L1  L2  inductor acts as short circuit.
eq =
R1  R2  R
L1 L2
L1  L2   I
Given, = R1 R2
R1  R2  2 V

L1R2  R1L 2
= 2R1R2

 2R1R2L1  2R1R2L 2 V
I= .
R
= L1R1R2  L1R22  R1R2L2  R12L2

 R1L 2  R1  R2   R2L1 R2  R1   0

(12) EE (Test-3), Objective Solutions, 12th March 2016
91. (c) 36
 I1 =  1.8mA
20  103
V 2K I1 1
1K
VC1  VC2 20 k
I2 10 I2 +
36V 5 k v
1
–

At t  0 , combined voltage across two
1 1 Applying KCL at node 1
capacitors Vc1  Vc2 = V V I2 = I1 + 10 I2
1 2 3
Charge must be equal when capacitor are I1
 I2 =   0.2mA
connnected in series. 9
q = C1VC1  C2 Vc 2 Voltage across 5K resister

R
for equivalent capacitance v = 5  103  10I2
C1C2 =  5  103   10   0.2  103 
q = C C  VC  VC2 

E
1 2
2
= 10 V.
94. (d)
C1C2V
= C C .3 i

1 C 1 .C 2 V
1 2

2 V 2V
T 2 +
S
 VC 1  . .  .  volts v
C1 C1  C 2 3 3 3 9
20V
–
1 C1.C2 V 1 V V
& VC2  . .  .  volts .
A
C2 C1  C2 3 3 3 9
Given
92. (c) 4i = v 2 – 8 ...(1)
L1 = 5 mH, L2 = 20 mH
M

Applying KVL we get

 L  N2 20 – 2i = v ...(2)
It the number of turns are doubled the new value From equation (1) and (2), we get
of 4i = (20 – 2i)2 – 8
2  4i = 400 + 4i2 – 80i – 8
L1 =  2   L1
S

 i = 100 + i2 – 20i – 2
= 4  5  20 mH  i2 –21i + 98 = 0
2  (i – 7) (1– 14) = 0
IE

L2 =  2   L2
 i = 7, 14 A.
= 4  20  80 mH
95. (c)
Total Inductance
Leq = L1 + L2 – 2 M f(t) = 1[u(t–1)–u(t–2)]+2[u(t–2)– u(t–3)] +
(For negative polarity) 1[u(t–3)–u(t–4)]
M = K L1 L2 = u(t – 1) + u(t – 2) – u(t – 3) – u(t – 4).

= 0.5 20  80 96. (c)

= 0.5  40 V = IR R
= 20 = 200  0.02  30
Leq = 20 + 80 – 40
= 4 30
= 60 mH.
4 30
93. (b) IL = 200  0.5 j
Applying KVL in 1st loop we get
4 30
36 = 20  103 I1 = 100 j = 0.04  60
 EE (Test-3), Objective Solutions, 12th March 2016 (13)
4 30 • As the sphere of radius 10 cm encloses the
6 total charge Q. So the concentric sphere of
Ic = 10
 200  50j radius 20 cm will definitely enclose the total
charge Q. According to Gauss’s Law
= 0.04 120
(flux)2 = total charges enclosed
I = IR + IC + IL
= (flux)1
= 0.02 30  0.04   60  0.04 120
= 20 V.m.
= 0.02  30°.
100. (d)
97. (c)
Z

1
a
2
3

R
Y
Since charge density = 0 0 1
 
According to Gauss’s Law,  D.ds  Q 1

E
For r < a 1
4 3 X
D.4r 2 = 0 r 

T
3 Circulation F around closed path
r0  
D=
3 =  F.dl
For r  a
S      
=  F.dl   F.dl   F.dl
4 3 1 2 3
D.4 r 2 = 0 a
A
3 For curve (1), Z = 0
a3 0 
D= . So, F = xaˆ x  yaˆ y
3r 2  
M

Then,  F.dl =   xaˆ x  yaˆ y  . dxaˆ x  dyaˆ y  dzaˆ z 

98. (b) 1

0 1

=  x dx   y dy
1 0
Q
S

 0 1
x2 y2
= 
Conducting plates 2 1 2 0
IE

1 1
 360  =   0
No. of image charges =   1 2 2
  
 
The value of  F.dl will be same for curve (2) and
 360 
=   1 curve (3). So,
 30 
 
= 12  1  11 .  F.dl = 0
99. (b) 101. (d)
Applying image of charge method
+q
20 cm
1 2
d
10cm V=0
+Q


(14) EE (Test-3), Objective Solutions, 12th March 2016
+q Tacc = Tst  TL

= 12Nm  8Nm  4Nm

d
 = 1 rad/sec2

Tacc 4 Nm
d I= 
 1rad sec
(image charge)
–q = 4 Kgm2.
So, force, 107. (b)
q.q q2 An SCR is not a self commutating device. SCR
F=  .
4 0 .  2d 2 160 d2 requires a separate circuitary for its turn off
purpose. An IGBT can be turned ON and OFF
102. (c)
by its gate pulse. IGBT is self commutating
device.

R
108. (c)
Exp Q+ null Q+
I = ripple current

E
point

103. (b)
=
 Vdc  Vbattery  TON
Apply gauss law at the surface of first sphere.
 
 E.ds
Q
=  T L

 50  10   0.3  1  10 3
S
=
s 0 10  10 3
 Q 1 
E =   4R2  40  0.3
A
0 =  1.2A .
10
Q
= 4 R2 . 109. (a)
M

104. (a) For elimination of 5th harmonic.,

Pulse width  = 2 d
105. (d)
sin nd = 0 [n = 5]
The electric field intensity due to a charged plane,
5d = 0, ,2.....
S

 
â
E = 2 0 n
2 4 
2d = 0, ,
IE

where  is the uniform charge density.. 5 5


So, the electric field intensity E at origin due to  = 0, 72, 144.....
a change sheet placed at Z = 10 m.
110. (a)
 
E 0,0,0, =  â z  Power = 100 KW
20
Vd = 500 V
20  10 9
=
1
 â z  P = Vd  Id
2  10 8
360
100000
= 360  aˆ z  Id =
500
= 360aˆ z V m . = 200
106. (c) Id 200
RMS value of thyristor current = 
Tst = 12 Nm 3 3
TL = 8 Nm = 115.47A.
 EE (Test-3), Objective Solutions, 12th March 2016 (15)
111. (a) 116. (a)
R  0.12  A

I = 10A
L
Power loss when MOSFET is ON I 2 R =
10 2  0.12  A
= 12W
The device is ON for half time and OFF for other G
half, so average power loss is
K
12W Inductor has the basic property that it opposes
=
2 the change in the current. So, when a series
= 6 W. inductor is placed with SCR, it reduces the value
of (di/dt) by increasing the ‘dt’.
112. (d)
117. (d)

R
String efficiency
Voltage across the string During reverse recovery time, the device continues
=
n  voltage across the unit near to conduct in the reverse direction (not in forward

E
the power conductor direction) because of the presence of stored
charges in the depletion region and the
1 semiconductor layers.
=  100

T
4  0.30 • While designing any circuit, a dead time or,
= 83.33 %. commutation interval must be given between
removal of outgoing device and addition of
113. (a)
2
S incoming to device; otherwise source would
old  VBOld   SBnew  experience a direct short-circuit through
new
X X
= pu  New    Old 
 outgoing and incoming devices.
A
pu
 VB   SB 
2 118. (b)
 13.2  50000
= 0.2     Armature reaction Shifts the Magnetic Neutral
 13.8  30000
M

= 0.305 pu Axis (MNA) axis of dc axis. Hence shifting the

brushes would result in smooth commutation
114. (b) but it is the effect of shifting of brushes that flux
The HVDC circuit breaker are quite expensive per pole gets reduced.
as there is no zero crossing as in case of ac so 119. (a)
S

that the contacts could be seprated at that

instant. Eb
For dc machines, N  ...(1)

IE

115. (d) When the field winding gets disconnected, there

For an open ended line, will be only residual magnetic field flux which is
Reflection coefficient of voltage very small. So from the equation (1) it is clear
that the machine would run upto dangerously
 Z  high speed.
R 1  0 
R  Z0  R   1
= 
R  Z0  Z0  120. (a)
R 1 
 R 
For a series motor,   Ia
as R   At no-load, Ia is very low
i.e. reflected voltage, Vr  1 Vi    V Eb Eb
As, speed, N    I
Reflection coefficient of current a
As Ia is very low at no-load, a series motor
 R  Z0  attains dangerously high speed. To avoid this,
=  R  Z   1  as R   we never run dc series motor at no-load.
 0 
As swineburne’s test is a no-load test, it cannot
i.e. reflected current, Ir = –1.(Ii) = –I. be done on dc series motor.