Power Electronics

Power semiconductor devices

Dr. Firas Obeidat

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 Table of contents
1 • Introduction
2 • Classifications of Power Switches
3 • Power Diodes
4 • Thyristors (SCRs)
5 • The Triac
6 • The Gate Turn-Off Thyristor (GTO)
7 • Insulated Gate-Commutated Thyristor (IGCT)
8 • The MOS-Controlled Thyristor
9 • Bipolar Junction Transistor (BJT)
10 • MOSFET
11 • IGBT
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Dr. Firas Obeidat Faculty of Engineering Philadelphia University
 Introduction
 Electronic switches capable of handling high voltage and current operations at
high frequency (HF) are the most important devices needed in the design of
energy conversion systems that use power electronic.
 An ideal power electronic switch can be represented as a three terminals
device as shown in the figure; The input, the output, and a control terminal
that imposes ON/OFF conditions on the switch.

A switch is considered ‘‘ideal’’

• When the switch is open, it has zero-current
through it and can handle infinite voltage.
• When the switch is closed it has zero-voltage
across it and can carry infinite current.
• An ideal switch changes condition instantly,
which means that it takes zero-time to switch
from ON-to-OFF or OFF-to-ON.
• exhibits zero-power dissipation, carries
bidirectional current, and can support
bidirectional voltage.
• By definition, an ideal switch can operate in all
four quadrants.
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 Introduction
Practical or real switches do have their limitations in all of
the characteristics explained in an ideal switch.
When a switch is on, it has some voltage across it, known as the on-voltage and it
carries a finite current.
During the off stage, it may carry a small current known as the leakage current
while supporting a finite voltage.

The switching from ON-to-OFF and vice versa does not happen instantaneously.

There is voltage and current across the non-ideal switch

at all times, which will result in two types of losses

• The first loss occurs during the on and off-states and is defined as
the ‘‘conduction loss’’.
• The second loss is defined as the ‘‘switching loss’’ which occurs just
as the switch changes state as either opening or closing. The switch
losses result in raising the overall switch temperature.
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 Classifications of Power Switches

There are three classes of power switches

Uncontrolled switch: The switch has no control terminal. The state of the switch is
determined by the external voltage or current conditions of the circuit in which the
switch is connected. A diode is an example of such switch.

Semi-controlled switch: In this case the circuit designer has limited control over the
switch. For example, the switch can be turned-on from the control terminal. However,
once ON, it cannot be turned-off from the control signal. The switch can be switched
off by the operation of the circuit or by an auxiliary circuit that is added to force the
switch to turn-off. A thyristor or a SCR is an example of this switch type.

Fully controlled switch: The switch can be turned ON and OFF via the control
terminal. Examples of this switch are the BJT, the MOSFET, the IGBT, the IGCT,
the GTO thyristor, and the MOS-controlled thyristor (MCT).

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 Power Diodes
A diode is the simplest electronic switch. It is uncontrollable in that
the on and off conditions are determined by voltages and currents in
the circuit.

Diode terminals are known as Anode (A) and cathode (K) as shown
in fig. a.

The diode is forward-biased (ON) when the current iD is positive

while supporting a small voltage (0.2V to 3V) - (quadrant I in fig. b).
The diode current varies exponentially with the diode voltage.

When the diode is reversed-biased (OFF), it supports a negative

voltage and carries a negligible current (leakage current from μA to
mA) - (quadrant III in fig. b).

When the negative voltage exceeds a certain limit, known as the

breakdown voltage, the leakage current increases rapidly while the
voltage remains at the breaking value, which potentially damages the
device.

The ideal diode characteristics are shown in fig. c. During the ON-
state, the diode has zero-voltage across it and carries a positive
current. During the OFF state, the diode carries zero-current and
supports a negative voltage.
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 Types of Power Diodes
Line frequency (general purpose)

• On state voltage: very low (below 1V).

• Large trr (about 25us) (very slow response).
• Very high current ratings (up to 6kA).
• Very high voltage ratings(8kV).
• Used in line-frequency (50/60Hz) applications such as rectifiers.

Fast recovery

• Very low trr (<1μs).

• Power levels at several hundred volts and several hundred amps.
• Normally used in high frequency circuits.

Schottky

• Very low forward voltage drop (typical 0.3V).

• Limited blocking voltage (50-100V).
• Used in low voltage, high current application such as switched mode
power supplies.
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 Thyristors

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Thyristors ( Silicon Controlled Rectifiers “SCRs”)
Thyristors are electronic switches used in
some power electronic circuits where
control of switch turn-on is required. But
once it turns ON, the control terminal
becomes ineffective and the thyristor
behaves similar to a diode.

Thyristors are capable of large currents

and large blocking voltages for use in
high-power applications, but switching
frequencies cannot be as high as when
using other devices such as MOSFETs.

The thyristor current, IA, flows from the

anode (A) to the cathode (K) and the
voltage VAk across the thyristor is positive
when the anode is at higher voltage than
the cathode.

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Thyristors ( Silicon Controlled Rectifiers “SCRs”)
In quadrant I, in the absence of a gate
current, the device is OFF in the forward
blocking region and supports a positive
voltage.

If a gate current is applied, the device

switches to the ON-state region and the device
has a i-v characteristic similar to that of a
diode.

In quadrant III, the device is OFF and the

region is known as the reverse blocking region
and supports a negative voltage.

 The characteristics are similar to those of a diode. Comparing the

switching characteristics of a diode and a thyristor, it appears that when
the thyristor is OFF, it can block large positive or negative voltage, which
is a fundamental feature that is important in circuit applications.
 thyristor can be considered to carry an unidirectional current and
supports a bidirectional voltage.
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Thyristors ( Silicon Controlled Rectifiers “SCRs”)
Thyristors can only be turned on with three conditions:

• The device must be forward biased, i.e., the anode should be more
positive than the cathode.
• A positive gate current (Ig) should be applied at the gate.
• The current through the thyristor should be more than the latching
current.
Once conducting ,the anode current is LATCHED (continuously
flowing).

SCR rating
• Surge Current Rating (IFM)—The surge current rating (IFM) of an SCR is the peak anode current an SCR
can handle for a short duration.
• Holding Current (IL)—A minimum anode current must flow through the SCR in order for it to stay ON
initially after the gate signal is removed. This current is called the latching current (IL).
• Latching Current (IH)—After the SCR is latched on, a certain minimum value of anode current is needed to
maintain conduction. If the anode current is reduced below this minimum value, the SCR will turn OFF.
• Peak Repetitive Reverse Voltage (VRRM)—The maximum instantaneous voltage that an SCR can withstand,
without breakdown, in the reverse direction.
• Peak Repetitive Forward Blocking Voltage (VDRM)—The maximum instantaneous voltage that the SCR can
block in the forward direction. If the VDRM rating is exceeded, the SCR will conduct without a gate voltage.
• Nonrepetitive Peak Reverse Voltage (VRSM)—The maximum transient reverse voltage that the SCR can
withstand.
• Maximum Gate Trigger Current (IGTM)—The maximum DC gate current allowed to turn the SCR ON.
• Minimum Gate Trigger Voltage (VGT)—The minimum DC gate-to-cathode voltage required to trigger the
SCR.
• Minimum Gate Trigger Current (IGT)—The minimum DC gate current necessary to turn the SCR ON.
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Thyristors ( Silicon Controlled Rectifiers “SCRs”)
Thyristor TURN-OFF
• Thyristor cannot be turned off by applying negative gate current. It can only
be turned off if IA goes negative (reverse). This happens when negative
portion of the of sine-wave occurs (natural commutation),
• Another method of turning off is known as “forced commutation”, The
anode current is “diverted” to another circuitry.

Phase controlled
Types of
- Rectifying line frequency voltage and current for ac and dc motor drives.
Thyristors - Large voltage (up to 7kV) and current (up to 5kA) capability.
- Low on-state voltage drop (1.5 to 3V).
Inverter grade
- Used in inverter and chopper.
- Quite fast. Can be turned-on using “force-commutation” method.

Light activated
- Similar to phase controlled, but triggered by pulse of light.
- Normally very high power ratings.
TRIAC
- Dual polarity thyristors.

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 The Triac (triode for alternating current)
The Triac is a member of the thyristor family which can conduct in
both directions (bidirectional semi-controlled device). Thus a Triac
is similar to two back to back (anti parallel) connected thyristosr
but with only three terminals.

The Triac extensively used in residential lamp dimmers, heater

control and for speed control of small single phase series and
induction motors.

The conduction of a triac is initiated by injecting a current pulse

into the gate terminal. The triac turns off only when the current
through the main terminals become zero.

As the Triac can conduct in both the directions the terms “anode”
and “cathode” are not used for Triacs. The three terminals are
marked as MT1 (Main Terminal 1), MT2 (Main Terminal 2) and the
gate by G.

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 The Triac (triode for alternating current)
Since a Triac is a bidirectional device and can have its terminals at various combinations
of positive and negative voltages, there are four possible electrode potential combinations
as given below
• MT2 positive with respect to MT1, G positive with respect to MT1.
• MT2 positive with respect to MT1, G negative with respect to MT1.
• MT2 negative with respect to MT1, G negative with respect to MT1.
• MT2 negative with respect to MT1, G positive with respect to MT1.

In trigger mode-1 the gate current flows

mainly through the P2 N2 junction like an
ordinary thyristor. When the gate current
has injected sufficient charge into P2 layer
the Triac starts conducting through the P1
N1 P2 N2 layers like an ordinary thyristor.

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 The Gate Turn-Off Thyristor (GTO)
The GTO thyristor is a device that A (Anode)
operates similar to a normal thyristor Ia
except the device physics, design and
manufacturing features allow it to be +
turned-off by a negative gate current Vak
which is accomplished through the use of _
a bipolar transistor. I
g
K (Cathode)
Turning off is difficult. Need very large GTO: Symbol
reverse gate current (normally 1/5 of anode
current).
Ia

Gate drive design is very difficult due to Ig>0 Ig=0

very large reverse gate current at turn off. Ih
Vr Ibo

Vbo Vak
Ratings: Highest power ratings switch:
Voltage: Vak<5kV; Current: Ia<5kA.
Frequency<5KHz.
v-i characteristics
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 Insulated Gate-Commutated Thyristor (IGCT)
Conducts like normal thyristor (latching), but can
be turned off using gate signal, similar to IGBT
turn off; 20V is sufficent.

Ia

+
Vak IGCT
_
Power switch is integrated with the gate-drive
unit.
I
g
K (Cathode)

Ratings:
Voltage: Vak<6.5kV; Current: Ia<4kA.
Frequency<1KHz.
Currently 10kV device is being developed.
Very low on state voltage: 2.7V for 4kA device

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 The MOS-Controlled Thyristor

The MCT is a hybrid or double

mechanism device that was designed
to have a control port of a MOSFET
and a power port of a thyristor.

The characteristics of MCT are

similar to the GTO, except that the
gate drive circuitry for the MCT is
less complicated than the design for
a GTO as the control circuit of the
MCT uses a MOSFET instead of a
transistor.

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 Transistors

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 Bipolar Junction Transistor (BJT)

For the npn-type BJT shown in fig. a, the Base (B) is the
control terminal, where the power terminals are the Collector
(C) and the Emitter (E).

The real v-i characteristics of device are shown in fig. b. The

device operates in quadrant I and is characterized by the plot
of the collector current IC versus the collector to emitter
voltage vCE as shown in fig. b. BJT is a current-controlled
device.

The device has three regions two of them where the device
operates as a switch and the third is where the device operates
as a linear amplifier. The device is OFF in the region below
iB=0 and is ON in the region where vCE is less than vCE(Sat).

Neglecting the middle region, the idealized device

characteristics as a switch are shown in fig. c. During the ON
state the device carries a collector current IC>0 with vCE=0. In
the OFF-state, the device supports positive vCE>0 with IC = 0.
Therefore, the BJT is unidirectional current and voltage
device.

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The Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

For the n-channel MOSFET shown in fig. a, the control

terminal known as the Gate (G) and the power terminals are
the Drain (D) and Source (S).

The device is controlled by supplying a voltage (vGS) between

the gate and the source. This makes it a voltage controlled
device compared to the BJT, which is a current-controlled
device.

The real v-i characteristics of device are shown in fig. b.

Similar to the BJT, the MOSFET operates within three
operating regions. Two of the regions are used when the
device is operated as a switch, and the third is when the device
is used as an amplifier.

To maintain the MOSFET in the off-state, vGS must be less

than a threshold voltage known as vT, which is the region
below the line marked OFF. And when the device is ON it act
as resistance determined by the slope of the line marked ON.

The idealized characteristics of a MOSFET switch are shown

in fig. c. When the device is ON, it has zero vDS and carriers a
current ID>0 and when the device is OFF it supports a positive
vDS and has zero drain current (ID = 0).
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 The Insulated Gate Bipolar Transistor (IGBT)

The IGBT (its symbol shown in fig. a) is a hybrid or also

known as double mechanism device. Its control port
resembles a MOSFET and its output or power port resembles (b)
a BJT. Therefore, an IGBT combines the fast switching of a
MOSFET and the low power conduction loss of a BJT.

The control terminal is labeled as gate (G) and the power

terminals are labeled as collector (C) and emitter (E).

The i-v characteristics of a real IGBT are shown in fig. b,

which shows that the device operates in quadrants I and III.
The ideal characteristics of the device are shown in fig. c. The
device can block bidirectional voltage and conduct
unidirectional current.

An IGBT can change to the ON-state very fast but is slower

than a MOSFET device. Discharging the gate capacitance
completes control of the IGBT to the OFF-state. IGBT’s are
typically used for high power switching applications such as
motor controls and for medium power PV and wind PE.

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 Comparison between GTO, IGCT and IGBT

Item GTO IGCT IGBT

Maximum switch power (V×I ) 36MVA 36MVA 6MVA

Active di/dt and dv/dt control No No Yes

Active short circuit protection No No Yes
Turn-off (dv/dt) snubber Required Not required No required
Turn-on (di/dt) snubber Required Required No required
Parallel connection No No Yes
Switching speed Slow Moderate Fast
Open
Behavior after destruction Shorted Shorted
in most cases
On-state losses Low Low High
Switching losses High Low Low
Complex, Complex, Simple,
Gate Driver
separate integrated compact
Gate Driver Power
High High Low
Consumption
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 Device Rating
V (V)
12000 12000V/1500A
SCR (Mitsubishi) SCR: 27MVA
GTO/GCT: 36MVA
10000 IGBT: 6MVA

6500V/600A 7500V/1650A
8000 (Eupec)
(Eupec) 6000V/3000A 6500V/4200A 6000V/6000A
(ABB) (ABB) (Mitsubishi)
6000
6500V/1500A
(Mitsubishi)
GTO/GCT 4800V
5000A
3300V/1200A (Westcode)
4000
(Eupec)
4500V/900A 1700V/3600A
2500V/1800A
(Mitsubishi)
2000 (Fuji) (Eupec)
IGBT
0
0 1000 2000 3000 4000 5000 6000 I (A)
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