Name:

Student Number: Signature:

BİLKENT UNIVERSITY

MECHANICAL ENGINEERING DEPARTMENT

ME 657: Micro/Nano Manufacturing

ONLINE MIDTERM EXAM

Date: 12 April 2020

Asst. Prof. E. Yegân Erdem

Good Luck!

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ME 657 Micro/Nano Manufacturing
Spring 2020 MIDTERM

Problem 1 (40%):

In the figure you see the MEMS device of vertical comb

drive where combs are offset. The initial picture shows an
angled view whereas the second shows the cross-sectional
view. (You can ignore the bimorph cantilever).
a) Draw the cross-sectional view of the fabrication steps and
explain each step.
b) Draw the lithograpy masks.

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ME 657 Micro/Nano Manufacturing
Spring 2020 MIDTERM

Problem 2 (30%):

Suppose you applied the following fabrication process flow to the layout shown below:

1. Deposit 2µm low temperature oxide.

2. Deposit 2µm of undoped silicon.

3. Ion implant with phosphorus.

4. Do lithography: Spin and expose resist with the single mask shown below.

5. Etch the polysilicon using reactive ion etching (RIE). Assume that the photoresist sidewalls are perfectly straight
and the etch is completely anisotropic with an infinite selectivity of polysilicon to oxide.

6. Remove photoresist.

7. Dip the wafer in 5:1 buffered hydrofluoric acid (BHF) for 10 minutes, where the etch rate of oxide in BHF is
700nm/min.

a) Draw the final cross-section of the structure after release along A-A'. Assume there is no stiction.

b) If the implanted phosphorus has a uniform axial compressive stress, how would the cross section you draw in part
(a) change?

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ME 657 Micro/Nano Manufacturing
Spring 2020 MIDTERM

Problem 3 (30%):

Remember the SCREAM process which was a method of obtaining isolated structure by using a single mask. In
general, the outcome of this process looked like this:

By doing some modifications to the process, you can obtain cross-sections that look different than the one
above. But here are some cross sections that are impossible (or at least difficult) to achieve. For each
diagram explain what is wrong with it.

(a) This is a cross section after the first anisotropic Si etch.

(b) This is a cross section after the first anisotropic silicon etch, removal of resist and conformal
deposition of SiO2.

(c) This is a cross section from the end of the process.

(d) Propose a variation of the SCREAM process that produces a significantly different final cross
section. Draw a diagram and explain how this modification can be made.