NTMFS4955N

MOSFET – Power, Single,

N-Channel, SO-8 FL
30 V, 48 A
Features
• Low RDS(on) to Minimize Conduction Losses http://onsemi.com
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
V(BR)DSS RDS(ON) MAX ID MAX
• Optimized for 5 V, 12 V Gate Drives
5.6 mW @ 10 V
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 30 V 48 A
Compliant 8.5 mW @ 4.5 V

Applications
D (5,6)
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Unit G (4)

Drain−to−Source Voltage VDSS 30 V

Gate−to−Source Voltage VGS ±20 V S (1,2,3)
Continuous Drain TA = 25°C ID 16.7 A N−CHANNEL MOSFET
Current RqJA
(Note 1) TA = 100°C 10.5
MARKING
Power Dissipation TA = 25°C PD 2.70 W DIAGRAM
RqJA (Note 1)
D
Continuous Drain TA = 25°C ID 25.2 A
Current RqJA ≤ 10 s 1 S D
TA = 100°C 15.9 S 4955N
(Note 1) SO−8 FLAT LEAD
S AYWZZ
Power Dissipation TA = 25°C PD 6.16 W CASE 488AA
RqJA ≤ 10 s (Note 1) STYLE 1 G D
Steady
State D
Continuous Drain TA = 25°C ID 9.7 A
Current RqJA
(Note 2) TA = 100°C 6.2 A = Assembly Location
Y = Year
Power Dissipation TA = 25°C PD 0.92 W
W = Work Week
RqJA (Note 2)
ZZ = Lot Traceability
Continuous Drain TC = 25°C ID 48 A
Current RqJC
(Note 1) TC =100°C 30
Power Dissipation TC = 25°C PD 23.2 W
ORDERING INFORMATION
RqJC (Note 1)
Pulsed Drain TA = 25°C, tp = 10 ms IDM 210 A Device Package Shipping†
Current
NTMFS4955NT1G SO−8 FL 1500 /
Current Limited by Package TA = 25°C IDmax 100 A (Pb−Free) Tape & Reel
Operating Junction and Storage TJ, −55 to °C
Temperature TSTG +150 NTMFS4955NT3G SO−8 FL 5000 /
(Pb−Free) Tape & Reel
Source Current (Body Diode) IS 21 A
Drain to Source DV/DT dV/dt 6.0 V/ns †For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

May, 2019 − Rev. 7 NTMFS4955N/D
 NTMFS4955N

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter Symbol Value Unit
Single Pulse Drain−to−Source Avalanche EAS 34 mJ
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 26 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes TL 260 °C
(1/8″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 5.4
Junction−to−Ambient – Steady State (Note 3) RqJA 46.3
°C/W
Junction−to−Ambient – Steady State (Note 4) RqJA 136.2
Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 20.3
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V
Drain−to−Source Breakdown Voltage V(BR)DSSt VGS = 0 V, ID(aval) = 11.0 A, 34 V
(transient) Tcase = 25°C, ttransient = 100 ns

Drain−to−Source Breakdown Voltage V(BR)DSS/ 21

mV/°C
Temperature Coefficient TJ
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C 1.0
VDS = 24 V mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.2 1.7 2.2 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ 3.9 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 4.5 5.6
ID = 15 A 4.5
mW
VGS = 4.5 V ID = 30 A 6.8 8.5
ID = 15 A 6.7
Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 52 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS 1264
Output Capacitance COSS VGS = 0 V, f = 1 MHz, VDS = 15 V 483 pF
Reverse Transfer Capacitance CRSS 143
Capacitance Ratio CRSS / VGS = 0 V, VDS = 15 V, f = 1 MHz 0.11 0.22
CISS

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

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 NTMFS4955N

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
CHARGES, CAPACITANCES & GATE RESISTANCE
Total Gate Charge QG(TOT) 10.8
Threshold Gate Charge QG(TH) 2.0
VGS = 4.5 V, VDS = 15 V; ID = 30 A nC
Gate−to−Source Charge QGS 3.8
Gate−to−Drain Charge QGD 4.2
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 21.5 nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time td(ON) 9.5
Rise Time tr VGS = 4.5 V, VDS = 15 V, 32.7
ns
Turn−Off Delay Time td(OFF) ID = 15 A, RG = 3.0 W 16.4
Fall Time tf 6.2
Turn−On Delay Time td(ON) 7.4
Rise Time tr VGS = 10 V, VDS = 15 V, 27.5
ns
Turn−Off Delay Time td(OFF) ID = 15 A, RG = 3.0 W 20.3
Fall Time tf 4.1
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.86 1.1
V
IS = 30 A TJ = 125°C 0.75
Reverse Recovery Time tRR 25.8
Charge Time ta VGS = 0 V, dIS/dt = 100 A/ms, 12.4 ns
Discharge Time tb IS = 30 A 13.4
Reverse Recovery Charge QRR 13.6 nC
PACKAGE PARASITIC VALUES
Source Inductance LS 1.00 nH
Drain Inductance LD 0.005 nH
TA = 25°C
Gate Inductance LG 1.84 nH
Gate Resistance RG 1.0 2.2 W
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.

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 NTMFS4955N

TYPICAL CHARACTERISTICS

120 120
10 V 4.5 V TJ = 25°C TJ = −55°C
110 4.0 V 110
100 100
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

TJ = 25°C TJ = 125°C
90 90
80 80
3.5 V
70 70 VDS = 10 V
60 60
50 50
40 3.0 V 40
30 30
20 20
10 VGS = 2.5 V 10
0 0
0 1 2 3 4 5 1 2 3 4 5
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.020 0.011
0.018 ID = 30 A 0.010 T = 25°C
0.016
0.009
0.014
0.012 0.008 VGS = 4.5 V

0.010 0.007
0.008
0.006
0.006
0.005
0.004 VGS = 10 V
0.002 0.004
0 0.003
3 4 5 6 7 8 9 10 10 20 30 40 50 60 70 80 90 100 110 120
VGS (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage

1.7 10,000
1.6 ID = 30 A TJ = 150°C
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE

1.5 VGS = 10 V
IDSS, LEAKAGE (nA)

1.4
1,000 TJ = 125°C
1.3
1.2
1.1
1.0 100 TJ = 85°C
0.9
0.8
0.7 VGS = 0 V
0.6 10
−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage

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 NTMFS4955N

TYPICAL CHARACTERISTICS

1600 11

VGS, GATE−TO−SOURCE VOLTAGE (V)

QT
TJ = 25°C 10
1400 Ciss
VGS = 0 V 9
C, CAPACITANCE (pF)

1200 8
1000 7
6
800 Coss 5
600 4 Qgs Qgd TJ = 25°C

400 3
2 VGS = 10 V
Crss
200 VDD = 15 V
1 ID = 30 A
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20 22
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge

1000 30
VGS = 0 V
25
IS, SOURCE CURRENT (A)
VGS = 10 V
VDD = 15 V td(off)
100 ID = 15 A tf 20
t, TIME (ns)

tr
15

10 td(on) 10
TJ = 125°C TJ = 25°C
5

1 0
1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance

1000 40
SOURCE AVALANCHE ENERGY (mJ)

0 V < VGS < 10 V 36 ID = 26 A

EAS, SINGLE PULSE DRAIN−TO−

Single Pulse
100 TC = 25°C 32
ID, DRAIN CURRENT (A)

10 ms 28
10 100 ms 24

1 ms 20
1 10 ms 16
12
RDS(on) Limit
0.1 Thermal Limit dc 8
Package Limit 4
0.01 0
0.01 0.1 1 10 100 25 50 75 100 125 150
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs.
Safe Operating Area Starting Junction Temperature

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 NTMFS4955N

TYPICAL CHARACTERISTICS

100
D = 0.5
0.2
10
0.1
0.05
(°C/W)

0.02
1
r(t)

0.01

0.1
SINGLE PULSE

0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t, TIME (s)
Figure 13. Thermal Response

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

DFN5 5x6, 1.27P

(SO−8FL)
CASE 488AA
1 ISSUE N
SCALE 2:1 DATE 25 JUN 2018
2X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B BURRS.
2X
D1 MILLIMETERS
0.20 C DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.00 −−− 0.05
4X b 0.33 0.41 0.51
E1 q c 0.23 0.28 0.33
E D 5.00 5.15 5.30
2 D1 4.70 4.90 5.10
c D2 3.80 4.00 4.20
A1 E 6.00 6.15 6.30
E1 5.70 5.90 6.10
1 2 3 4 E2 3.45 3.65 3.85
e 1.27 BSC
TOP VIEW G 0.51 0.575 0.71
C K 1.20 1.35 1.50
SEATING L 0.51 0.575 0.71
0.10 C DETAIL A PLANE L1 0.125 REF
M 3.00 3.40 3.80
A q 0_ −−− 12 _

0.10 C GENERIC
SIDE VIEW MARKING DIAGRAM*
DETAIL A
1
b 8X XXXXXX
0.10 C A B AYWZZ
e/2
0.05 c e
L
1 4 XXXXXX = Specific Device Code
A = Assembly Location
K
Y = Year
RECOMMENDED W = Work Week
E2 SOLDERING FOOTPRINT* ZZ = Lot Traceability
PIN 5 M 2X
(EXPOSED PAD) L1 0.495 4.560 *This information is generic. Please refer to
2X device data sheet for actual part marking.
1.530 Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
G D2 may not follow the Generic Marking.
2X
BOTTOM VIEW 0.475
3.200
4.530

STYLE 1: STYLE 2: 2X
1.330
PIN 1. SOURCE PIN 1. ANODE
2. SOURCE 2. ANODE
0.905
3. SOURCE 3. ANODE 1
4. GATE 4. NO CONNECT
5. DRAIN 5. CATHODE 0.965
4X
1.000 1.270
4X 0.750 PITCH
DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON14036D Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: DFN5 5x6, 1.27P (SO−8FL) PAGE 1 OF 1

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