AO4420A

30V N-Channel MOSFET

General Description Product Summary

The AO4420A uses advanced trench technology to VDS (V) = 30V

provide excellent RDS(ON), shoot-through immunity ID = 13.7A (VGS = 10V)
and body diode characteristics. This device is RDS(ON) < 10.5mΩ (VGS = 10V)
suitable for use as a synchronous switch in PWM RDS(ON) < 12mΩ (VGS = 4.5V)
applications.
100% UIS Tested
100% Rg Tested

SOIC-8

Top View Bottom View D

D
D
D
D

G G
S
S S
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TA=25°C 13.7
AF
Current TA=70°C ID 9.7 A
Pulsed Drain Current B IDM 60
Avalanche Current B IAR 20 A
B
Repetitive avalanche energy L=0.3mH EAR 60 mJ
TA=25°C 3.1
PD W
Power Dissipation TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 28 40 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 54 75 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 21 30 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4420A

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=24V, VGS=0V 0.004 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.6 1.1 2 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 40 A
VGS=10V, ID=13.7A 8.3 10.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 12.5 15
VGS=4.5V, ID=12.7A 9.7 12 mΩ
gFS Forward Transconductance VDS=5V, ID=13.7A 30 37 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 1 V
IS Maximum Body-Diode Continuous Current 5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 3656 4050 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 256 pF
Crss Reverse Transfer Capacitance 168 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.86 1.1 Ω
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge 30.5 36 nC
Qgs Gate Source Charge VGS=4.5V, VDS=15V, ID=13.7A 4.6 nC
Qgd Gate Drain Charge 8.6 nC
tD(on) Turn-On DelayTime 5.5 9 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.1Ω, 3.4 7 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 49.8 75 ns
tf Turn-Off Fall Time 5.9 11 ns
trr Body Diode Reverse Recovery Time IF=13.7A, dI/dt=100A/µs 22.5 28 ns
Qrr Body Diode Reverse Recovery Charge IF=13.7A, dI/dt=100A/µs 12.5 16 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t ≤ 10s thermal resistance rating.
Rev 1 : Nov. 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4420A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 30
10V 4.5V VGS=5V
50 25
VGS =2.5V

40 20

ID(A)
125°C
ID(A)

15
30
10
20
25°C
VGS =2.0V 5
10
0
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
0 1 2 3 4 5 VGS(Volts)
VDS(Volts) Figure 2: Transfer Characteristics
Figure 1: On-Regions Characteristics

1.8
12 Normalize ON-Resistance ID=13.7A
1.6
11
VGS =4.5V VGS=4.5V
1.4
10
RDS(ON)(mΩ )

VGS=10V
1.2
9

8 1.0
VGS =10V
7 0.8
0 25 50 75 100 125 150 175
6
Temperature (°C)
0 5 10 15 20 25 30
Figure 4: On-Resistance vs. Junction
ID(A) Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage

1E+01
30
1E+00
ID=13.7A
25
1E-01
125°C
20
RDS(ON)(mΩ )

125°C
IS(A)

1E-02
15

1E-03
10
25°C
1E-04 25°C
5

0 1E-05
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0

VGS(Volts) VSD(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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AO4420A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 10000
VDS=15V
Ciss
4 ID=13.7A

Capacitance (pF)
VGS(Volts)

3
1000
2
Coss

1
Crss
0 100
0 10 20 30 40 0 5 10 15 20 25 30
Qg (nC) VDS(Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 50
10µs
RDS(ON)
limited 100µs 40

10 10ms 1ms
Power (W)

30
ID(A)

0.1s
1s
20
1 10s

TJ(Max) =150°C 10
DC
TA =25°C
0.1 0
0.1 1 10 100 0.01 0.1 1 10 100 1000
VDS(Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Operating Figure 10: Single Pulse Power Rating Junction-to-
Area (Note E) Ambient (Note E)

10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA In descending order
Zθ JA Normalized Transient

RθJA=40°C/W D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (S)
Figure 11: Normalized Maximum Transient Thermal Impedence

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