Transactions on Electrical and Electronic Materials Online ISSN 2092-7592

https://doi.org/10.1007/s42341-020-00196-x Print ISSN 1229-7607

REGULAR PAPER

Design and Analysis of AlGaN/GaN Based DG MOSHEMT

for High‑Frequency Application
Manish Verma1 · Ashutosh Nandi1

Received: 7 December 2019 / Revised: 9 March 2020 / Accepted: 28 March 2020

© The Korean Institute of Electrical and Electronic Material Engineers 2020

Abstract
In this work, AlGaN/GaN based DG MOSHEMT is designed at 0.8 µm gate length with ­Al2O3 gate dielectric. The key device
performance parameter such as gm, AV, fT, and fmax has been investigated using 2D Mixed-Mode Sentaurus TCAD device
simulation. The use of the double heterostructure helps to achieve higher on-current. We observe a double hump type feature
in transconductance which is attributed to occurrence of the double 2-DEG, resulting in better device linearity. Further, the
double gate structure is responsible for nearly ideal subthreshold slope (~ 59.94 mV/dec) and higher ­Ion/Ioff ratio (> 1016).
Moreover, the device offers comparable cut-off frequency (19.25 GHz) and maximum-oscillation frequency (66.95 GHz)
to the existing ­Al2O3/AlGaN/GaN based SG MOSHEMT alongwith tremendous improvement in terms of intrinsic gain
(~ 76 dB). Furthermore, enhancement of the device performance (fT = 122.44 GHz and fmax = 163.07 GHz) is achieved by
scaling down the gate length from 0.8 µm to 100 nm. These results indicate that A­ l2O3/AlGaN/GaN based DG MOSHEMT
can be possible alternative for millimeter and microwave frequency applications.

Keywords  AlGaN/GaN heterostructure · MUG · Cut-off frequency · Maximum oscillation frequency · Double gate

1 Introduction
Si-based power devices has been approached to their theo-
retical limits of operations in the field of 5G communica-
tion, satellite communication, RADAR communication.
Therefore, these high power and high-frequency appli-
cations appeal for semiconductor materials having high
breakdown voltage, operating electric field, operating tem-
perature, switching frequency, and low losses [1, 2]. Com-
pound semiconductor materials such as GaAs, GaN, SiC
have proved to be the better alternative to Silicon for such
RF and microwave application [3]. Among these materials,
GaN has been emerging as a propitious material to link-up
with the productive demands of the communication market
[4, 5]. Also, the establishment of a heterostructure between
GaN and AlGaN material named GaN/AlGaN heterostruc-
ture make this device an appropriate choice for high power
microwave and millimeter wave applications. Moreover, the
* Manish Verma
manish_6160013@nitkkr.ac.in
1
Department of Electronics and Communication Engineering,
National Institute of Technology, Kurukshetra, Haryana,
India
larger bandgap offset between the AlGaN and GaN materials
and the presence of spontaneous and piezoelectric polari-
zation charges forms 2-Dimensional electron gas (2DEG),
with extremely high carrier mobility in the channel, on the
lower bandgap GaN material, closer to the heterojunction
interface [6].
Because of the population of electrons in the channel at
zero gate voltage, conventional HEMTs are the normally-on
devices. Hence, there is an issue of creating a normally-off
HEMT device, while limiting the gate leakage [7]. However,
huge efforts have been made to achieve an enhancement-
mode GaN HEMT. In recessed gate structures [8, 9], the
2DEG charge density of the channel under the gate elec-
trode reduces and as a result threshold voltage (Vth) rises,
limiting the off-state current. In F− ion treatment of AlGaN/
GaN heterostructure [10], the main factor for the rise in Vth
is ascribed to the negative F− immobile charges at cross-
ing point of AlGaN/GaN which could degrade the 2DEG
mobility and diminute in off-current. In P-GaN gate struc-
tures [11], the positive ­Vth shift occurs initially with an
increase in doping but the further increment in doping in
p-GaN gate would lead to the Vth instability. In thin AlGaN
barrier structures [12], the polarization charge density
reduces which result in a reduction of 2DEG density and in

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 Transactions on Electrical and Electronic Materials

the Gate Injection Transistor (GIT) [13], the 2DEG density into consideration the already demonstrated fabrication tech-
is enhanced by injecting the holes from the p-type AlGaN niques for AlGaN/GaN MOSHEMT [21, 22], DG MOSFETs
to the AlGaN/GaN heterostructure which could result in [25–27] and heterostructure based FinFET devices [29, 30],
conductivity modulation. These structures, still facing the it seems that there is the possibility for AlGaN/GaN DG
issues of excessive leakage current through Schottky gate MOSHEMT for millimeter wave applications.
structures, result in the declination of the output power To the best of our knowledge, Analog/RF performance
density and propagation of unwanted harmonic signals of the AlGaN/GaN heterostructure based DG-MOSHEMT
impeding the device reliability. To sort out such problems device has not been properly demonstrated. So, we have
and to pull out the Gate leakage issue, a dielectric layer investigated the analog/RF performance FOMs parameters
can be crammed between the gate and barrier layer called such as drain current ­(ID), transconductance ­(gm), intrinsic
metal–insulator–semiconductor (MIS) HEMT [14–16]. In gain ­(AV), input capacitance (­ Cgg), cut-off frequency (fT),
this favor, several types of insulators such as S
­ iO2, ­SiNx [15], maximum oscillation frequency (fmax) of the AlGaN/GaN
­Al2O3 [17–20], ­HfO2 and other high-K dielectric [21, 22] heterostructure based DG-MOSFET device by using 2D
have been amassed to accomplish admirable performance Mixed-Mode Sentaurus TCAD [36].
of GaN MISHEMTs. Although, in contrast with a conven-
tional MIS structure such as GaAs, InP, InGaAs MISFETs,
it is challenging to illustrate the AlGaN/GaN based MIS
HEMT because of having two interfaces: insulator/AlGaN
2 Device Structure and Simulation
and AlGaN/GaN, making the potential modulation rela-
Framework
tively complex. Also, the semiconductor/insulator interfa-
Figure 1a shows the cross-sectional view of AlGaN/GaN
cial quality meaningfully influences the transistor function-
based DG-MOSFET. The proposed structure consists of
ality, therefore a credible gate dielectric and firm interface
two AlGaN-barrier followed by two spacer layers around a
with a small interface trap density (­ Dit) are crucial for the
GaN channel layer. The presence of two AlGaN/GaN het-
predictable commercialization of normally off power GaN
erostructure base the formation of double 2-DEG along both
MIS-FETs [23, 24]. ­Al2O3, being having a larger bandgap
the AlGaN/GaN interfaces [37, 38] as shown in Fig. 1b and
(~ 7–9 eV), high dielectric constant (~ 8–10), high break-
the distribution of electron concentrations (eDensity) along
down electric field and a larger band offset at ­Al2O3/AlGaN
both the heterointerface is revealed in Fig. 1c. The 2-DEG
interface, is one of the promising candidates to meet such
forms in lower bandgap GaN layer at both the interfaces.
requisition.
A highly doped (1e20 ­cm−3) ­n+-GaN layer on the source/
Although, the A­ l2O3/AlGaN/GaN based SG MIS-HEMT
drain electrode side was regrown for minimizing the contact
structure have achieved a remarkable progress for the high-
resistance. Among the widely adopted gate dielectric (e.g.
frequency application [23], but short channel effects (SCEs)
­SiO2, ­SiNx, ­Al2O3), ­Al2O3 is characterized by a larger band-
had interrupted this success for high power applications.
gap (~ 7–7.6 eV), relatively high dielectric constant (~ 9)
To suppress the SCEs, A lot of research had been done on
and high breakdown field (~ 10 MV/cm). Therefore, 10-nm
double gate and multigate structure [25–27]. The static and
thick ­Al2O3 is used as gate dielectric in the present work.
dynamic behavior of InAlAs/InGaAs DG-HEMTs is illus-
The n-type doping of 5e18 ­cm−3 is used in the barrier layers
trated by Vasallo et al. [28]. Im et al. have fabricated AlGaN/
while spacer layers are unintentionally doped to minimize
GaN FinFETs with ­Al2O3 gate dielectric [29] and demon-
the lowering of the mobility due to scattering. The device
strated its improved performance by employing a metal gate
structure parameter such as gate length (­ Lg), underlap length
for covering the nano-channel region [30]. Sarkar and Jana
­(Lun), Oxide thickness ­(tox), barrier layer thickness ­(tb), chan-
[31] had explored the influence of gate underlap on analog
nel layer thickness ­(tch) and Al-mole fraction are listed in
and RF performance of InP/In0.53Ga0.47As based DG MOS-
Table 1. The large conduction band offset (∆EC) between
FET. Later, the analog performance and the effect of barrier
AlGaN and GaN layer result in confinement of the 2-DEG in
thickness on the analog performance of AlInN/GaN based
GaN channel layer at the interface. The physical properties
DG MOSHEMT has been confirmed by Hemant Pardeshi
of the A­ lxGa(1−x)N material can be evaluated by using the
et al. [32, 33]. Also, Adak and Swain [34] has illustrated
linear interpolation method, expressed as:
the high-K dielectric effects on performance analysis of
underlap ­In0.17Al0.83N/GaN DG-MOSHEMT. Khan [35] Alx Ga(1−x) N = x ⋅ AlN + (1 − x)GaN (1)
has exemplified the effect of barrier layer thickness on fT of
AlGaN/GaN based DG MOS-HEMT. The physical properties of AlN and GaN are enumerated in
Although until now, no experimental work or fabrica- Table 2. The device performance of the purposed 0.8 µm gate
tion technique of AlGaN/GaN heterostructure based DG length AlGaN/GaN DG MOSHEMT devices have been inves-
MOS-HEMT has been done until date. However, taking tigated using Sentaurus TCAD mixed-mode device simulator

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Transactions on Electrical and Electronic Materials

(a)

(b) (c)
1
1.2E+19

Electron concentrations ( / cm3)

1.0E+19
Band Energy (eV)

-1 Quantum Well 8.0E+18 AlGaN/GaN Interface

EC
EF 6.0E+18
-2 EV
4.0E+18
-3
2.0E+18

-4 0.0E+00

0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.00 0.02 0.04 0.06 0.08 0.10
Orthogonal Direction (X) Lateral direction of the device, x (mm)

Fig. 1  a The proposed structure of AlGaN/GaN heterostructure based sent along both the AlGaN/GaN interfaces. c Distribution of electron
DG MOSHEMT. b Band structure diagram of proposed AlGaN/GaN concentrations (eDensity) along both the AlGaN/GaN interfaces
heterostructure based DG-MOSHEMT. Double 2-DEG will be pre-

Table 1  Device structure parameters Table 2  Physical properties of GaN and AlN

Parameters Values Material parameters GaN AlN

Gate length ­(Lg) 0.8 µm Eg (eV) 3.47 6.2

Underlap length ­(Lun) 1 µm Permittivity (ε) 9.5 10.7
AlGaN layer thickness (­ tb) 20 nm Lattice constant (Å) 3.189 3.112
GaN layer thickness 100 nm µe ­(cm2/V-s) 1000 400
Oxide layer thickness 10 nm µh ­(cm2/V-s) 10 10
Al-mole fraction 0.25

models are used to include the ionized impurity scattering

[26, 27, 36]. The electrical characteristics of the proposed effects and velocity saturation effect respectively.
device are estimated by solving a 2-D drift diffusion model
1 1 1
together with the Shockley–Read–Hall (SRH) and Fermi sta- = + (2)
𝜇n 𝜇n,dop 𝜇n,field
tistics model. Doping dependent and field dependent mobility

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Table 3  ν–E curve parameters for GaN and AlGaN
Parameter GaN AlGaN
Mobility ­(cm2/V-s) 900 775
Saturation velocity (­ 107 cm/s) 2.1 1.95
β 1.7 1.5
Table 4  Polarization charge density at each interface
−2 −2 −2
nsp (GaN) ­(cm ) nsp (AlGaN) ­(cm ) Total ­(cm )
Al2O3/AlGaN – 1e+13 1e+13
GaN/AlGaN 3e+13 − 1e+13 2e+13
where 𝜇n is the low field mobility, 𝜇n,dop is the mobility
due to impurity scattering, and 𝜇n,field is the field depend-
ent mobility. The velocity-electric field curve parameters
for GaN and AlGaN are summarized in Table 3. Thermionic
emission model is used to define the interface condition at
the heterojunctions.
The spontaneous polarization arising at AlGaN/GaN
interface is considered in the simulation by introducing
the fixed charges (nsp) at each interface, listed in Table 4.
Interface states [39, 40] are also instigated in the simulation
at ­Al2O3/AlGaN interface to include the influences of non-
uniformly distributed trapped electrons.
Parasitic resistance ­(Rg, ­Rs etc.) affects the RF perfor-
mance such as fT, fmax [19] and therefore, need to be inserted
to the intrinsic core model to forecast the device perfor-
mance at millimeter and microwave frequency. At DC and
low frequency, the gate resistance primarily comprises of
the sheet resistance. However, high frequency (HF) reveals
two additional physical effects which will efficace the value
of the effective gate resistance [41]. One is the distributed
transmission line effect on the gate and the other one is the
distributed NQS effect in the channel. Therefore, the opera-
tive gate resistance ­RG comprises of two parts:
RG = RG,dtl + RG,nqs (3)
where ­RG,dtl is the distributed gate electrode resistance and
­RG,nqs is the distributed non quasi-static (NQS) channel
resistance. For long channel devices (­ LG > 0.4 µm) at high
frequency, NQS effect become more significant and ­RG,nqs
will dominates whereas for short channel devices, the contri-
bution of ­RG,dtl will be more. For a single finger device, ­RG,dtl
as a function of device geometry is given as [41]:
RG,sh Wf
RG,dtl = . (4)
𝛼 Lf
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Transactions on Electrical and Electronic Materials
where ­RG,sh is the sheet resistance of the gate material, ­Wf
and ­Lf are the width and length of the channel region of
device and α is fitting parameter, equal to 1/3 or 1/12 reli-
ant on the gate design. As seen from Eqs. 3 and 4, narrower
the device width, the ­RG will be dominated by the ­RG,nqs.
Though, the following expression can be accessed to get the
­RG,nqs approximately [41]:
𝛽
RG,nqs ≅ (5)
gm
where β is a fitting constraint having a emblematic
value around 0.2. The Wf ∕Lf of the proposed device is
100 µm/0.8 µm. Therefore, R ­ G will be dominating by ­RG,dtl.
In our simulation study, considering molybdenum with a
resistivity of 5.2e−6 Ω-cm as the gate material [31, 32, 34],
the gate electrode resistance of 0.87 Ω is included in our
simulation study. Based on a distinctive source/drain contact
resistivity value [32, 42] of 4 Ω-μm2, contact resistance (­ Rc)
is taken as 1.60 Ω.
3 Results and Discussion
3.1 DC Analysis
Figure 2a plots the transfer characteristics in normal and
Semi-log scale of the purposed AlGaN/GaN based DG
MOSHEMT. The DG MOSHEMT exhibits I­ off as low as
1.7e−17 A/mm due to double gate structure while ­Ion of 1.34
A/mm is observed due to formation of double 2-DEG along
both the AlGaN/GaN heterostructure, resulting in extremely
high on/off current ratio of ~ 8e+16. The larger conduction
band offset (CBO)/valance band offset (VBO) at AlGaN/
GaN interface as well as the presence of piezoelectric polari-
zation and spontaneous polarization in III-Nitride materi-
als, cause the formation of 2DEG, subsequently presence
of Double 2DEG at both the AlGaN/GaN interface results
in higher I­ on (~ 1.34A/mm @ V ­ gs = 3 V), whereas smaller
­Ioff (~ 1.7e−17A/mm) is due to better electrostatic control
effects in symmetrical double gate (DG) structure. However,
a plot of electron concentrations (eDensity) present at each
AlGaN/GaN interface along the lateral direction of device
has been shown in Fig. 2b for different value of gate volt-
age (i.e. for V
­ gs = − 8 V, − 6 V and 3 V respectively). From
Fig. 2b, it can been concluded that electron concentrations
(eDensity) increases at each AlGaN/GaN interface as gate
voltage increases from − 8 V (Off-state, lower ­Ioff) to 3 V
(On-state, higher I­ on). This results in nearly ideal steep sub-
threshold slope of 59.94 mV/dec, indicating an efficient gate
control over the channel.
Transactions on Electrical and Electronic Materials
(a)
(b)
Fig. 2  a Transfer characteristics of A ­ l2O3/AlGaN/GaN based DG
MOSHEMT at ­Vds of 10  V. The gate length and gate width of the
device is 0.8  µm and 1000  µm respectively. b Distribution of elec-
tron concentration (eDensity), in log scale, along the lateral direction
(x-direction) at ­Vgs = − 8 V, − 6 V and 3 V respectively
Figure 3 shows the plot between transconductance g­ m
and ­Vgs for a drain-to-source voltage of 10 V. The peak
value (1st peak) of the g­ m is approximately 252.58 mS/
mm 2. Different from the conventional structure, where
single ­g m peak is formed [43], an additional peak can
be observed in the transconductance, forming a double
hump transfer due to presence of double heterostructure
[44]. The existence of the additional 2DEG channel offers
several advantages including higher carrier density and
higher current density. The double hump feature in the
transconductance may also be utilized to optimize the
device linearity.
Figure 4 compares the output characteristics (­ Ids–Vds)
of the designed structure at different gate voltage of
− 6  V, − 3  V, 0  V and 3  V. It is observed here that a
maximum drain current of 1.34 A/mm is obtained with
­Vgs = 3 V for 10 nm thick ­Al2O3 dielectric layer.
3.2 RF Analysis
This section is dedicated to the analysis of small-signal RF
performance such as intrinsic gain ­(AV), cut-off frequency
(fT) and Maximum oscillation frequency (fmax) of the pro-
posed device [45, 46]. ­AV is defines as [43]:
AV = gm .Ro (6)
where ­gm is transconductance and R ­ o, inverse of output con-
ductance, is the output resistance. A plot of ­AV as a function
of gate voltage of the proposed device is framed in Fig. 5. fT
and fmax are other figure of merits analysed for describing the
analog performance of the proposed device. fT is that opera-
tional frequency upon which the short-circuit current gain
(|h21|) become one, whereas, fmax is related to unity Mason’s
Unilateral gain (MUG).
Parasitic capacitances play a key role for demonstrat-
ing the functionality of the device at high-frequency circuit
level. These capacitances, mainly the gate capacitance put
adverse effects on the signal distortions and influence the
power losses and the switching characteristics of a power
device. Lower value of ­Cgg shows a higher switching speed
and lower power losses. The gate capacitance Cgg for low
voltage application is mainly determined by the sum of gate-
to-drain capacitance (Cgd) and gate-to-source capacitance
(Cgs) while for higher voltage application, the total gate
capacitance can be formulated as:
1 1 1
Cgate
=
Coxide
+
Cbarrier (7)
where Cgate, Coxide and Cbarrier are the gate capacitance, oxide
capacitance and barrier capacitance respectively. The vari-
ations in C
­ gg with respect to gate voltage at a drain voltage
of 10 V is shown in Fig. 6.
By using Sentaurus TCAD tool [36], AC analysis is car-
ried out for a frequency range of 1 MHz to 200 GHz and
conductance and capacitance parameters are assessed. The
2-port network RF extraction tool that consider unity-gain-
point extraction method [36], generate fT and fmax as:
fT = fo .||h21 || (8)
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 Transactions on Electrical and Electronic Materials

Fig. 3  Transconductance versus
­Vgs at drain-to-source voltage
of 10 V. The transconductance
curve shows a double-hump
type feature which is due to
formation of two 2DEG at two
AlGaN/GaN interfaces and
can be utilized to improve the
device linearity

80

64
Intrinsic Gain, AV (dB)

48

32

16

0
-6 -5 -4 -3 -2 -1 0 1 2 3
Gate Voltage, Vgs (V)

Fig. 4  Output characteristics of ­ Al2O3/AlGaN/GaN based DG

MOSHEMT at a V ­ gs of − 6 V, − 3 V, 0 V and 3 V respectively Fig. 5  Intrinsic gain versuss gate voltage at ­Vds = 10 V and input fre-
quency of 1 MHz. The peak ­AV of 76 dB is achieved at ­Vgs =− 5.21 V

√
√
√ |Y − Y |2 3.3 Comparison
fmax = fo .√ [ ( ) (| )
21 12 |
( ) ( )] (9)
4 Re Y11 Re Y22 − Re Y12 Re Y21 A lot of research on AlGaN/GaN MOSHEMT has been car-
ried out by several groups using ­Al2O3 as gate dielectric,
where fo is the applied frequency. The variation of fT and focusing the single gate (SG) structure, either recessed or
fmax with respect to gate voltage, by using unity-gain-point non-recessed. Performance evaluation of AlGaN/GaN based
extraction method is plotted in Fig. 7. The peak fT and fmax at DG-MOSHEMT is not done yet, to best of author’s knowl-
­Vgs = − 4.51 V and ­Vds = 10 V is found to be 22.79 GHz and edge. Therefore, a comparative study of ­Al2O3/AlGaN/GaN
70.38 GHz respectively. It directs the proposed work to find based DG-MOSHEMT to existing work have been reviewed
the applicability in the field of millimeter-wave applications. in Table 5.

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As shown in Table  5, the AlGaN/GaN based DG-

MOSHEMT shows high I­ ds and g­ m,peak because of forma-
tion of double 2-DEG. Accrediting to double gate structure,
the device shows remarkable I­ on/Ioff ratio and nearly ideal
SS compared to other existing work. Moreso, the device
approach a comparable fT/fmax along with very high gain
performance.

3.4 Influence of Gate Length Scaling

This section describe the impact of gate length scaling on

Fig. 6  Gate capacitance ­(Cgg) as a function of gate voltage ­(Vgs) at
­Vds of 10 V and input frequency of 1 MHz
various FOMs such as SS, ­Ion/Ioff, ­AV, fT and fmax of the pro-
posed structure. ­AV is framed with respect to ­Vgs in Fig. 8
whereas Fig. 9a, b designate the variation of fT and fmax ver-
sus ­Vgs for gate length from 800 to 100 nm. Scaling down
the gate length will improves the parasitic conductances and
capacitances, and so attributes to the enhancement of the
fT and fmax. Furthermore, scaling down of gate length from
800 to 100 nm provides better linearity with acceptable gain
performance. Table 6 summarize the influence of gate length
on SS, ­Ion/Ioff, ­AV, fT and fmax.

4 Conclusion

AlGaN/GaN heterostructure based DG MOSHEMT is an

Fig. 7  fT and fmax versus ­Vgs. The peak fT and fmax are 22.79 GHz and
70.38 GHz respectively
attractive option in designing circuitry for high power and
high frequency applications. The proposed device employ-
ing double-gate structure shows nearly ideal SS with attrac-
tive ­Ion/Ioff. Furthermore, formation of double 2-DEG at both
heterointerfaces enhances the transconductance with double-
hump feature resulting in better linearity than SG device.
On top of that, the most crucial aspect of intrinsic gain
enhancement along with comparable fT and fmax is ascribed
to enhancement in ­gm and lowering of channel resistances.
More so, the enhancement of fT and fmax and comparatively
more linearity in gain is observed as the device scales down
to 100 nm gate length.

Table 5  Comparison of DC and RF performance parameters with existing work

Parameters [18] ­(Lg = 1 µm) [19] ­(Lg = 1.5 µm) [20] ­(Lg = 0.15 µm) This work ­(Lg = 0.8 µm)

ID (mA/mm) 0.8 A/mm @ ­Vgs = 3 V 0.563 A/mm @ ­Vgs = 6 V 31.75 mA/mm @ V

­ gs = 2 V 1.34 A/mm @ ­Vgs = 3 V
gm,peak (mS/mm) 150 (without passivation) 140 146.7 252.58
165 (with passivation)
Ioff – 1e−8 A/mm – 1.7e−17 A/mm
Ion/Ioff – 1e+8 – ~8.0e+16
SS (mV/dec) – 72–75 – 59–64
fT (GHz) 12 – 51 @ ­VDS = 5 V 19.25 @ ­VDS = 10 V
fmax (GHz) 34 115 @ V­ DS = 5 V 69.95@ ­VDS = 10 V
Gain – – 10.41–10.47 dB @ V­ DS = 20–27 V 76 dB @ 1 MHz freq.
and ­VDS = 10 V

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 Transactions on Electrical and Electronic Materials

80 Table 6  Influence of ­Lg on DC and RF performance parameters

800nm
400nm Gate length 800 nm 400 nm 200 nm 100 nm
64 200nm
100nm SS (mV/dec) 59.94 62.57 71.70 92.73
Intrinsic Gain, AV (dB)

Ion/Ioff 8.0e+16 8.4e+16 1.2e+16 2.7e+15

48
AV (dB) 76 63 43 27
fT (GHz) 19.25 46.97 88.12 122.44
32 fmax (GHz) 66.95 112.62 157.24 163.07

16

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