See discussions, stats, and author profiles for this publication at: https://www.researchgate.

net/publication/251497193

AlGaN/GaN hybrid MOS-HEMT analytical mobility model

Article in Solid-State Electronics · February 2011

DOI: 10.1016/j.sse.2010.11.016

CITATIONS READS

19 1,406

2 authors, including:

Amador Perez-Tomas
Catalan Institute of Nanoscience and Nanotechnology
155 PUBLICATIONS 3,982 CITATIONS

SEE PROFILE

Some of the authors of this publication are also working on these related projects:

VEHICLE ELECTRICAL SYSTEMS INTEGRATION (VESI) PROJECT View project

ANR PROXY: Extending the Frontier for Renewable Energy Technology: Efficient Power Oxytronics View project

All content following this page was uploaded by Amador Perez-Tomas on 27 March 2018.

The user has requested enhancement of the downloaded file.

 Solid-State Electronics 56 (2011) 201–206

Contents lists available at ScienceDirect

Solid-State Electronics
journal homepage: www.elsevier.com/locate/sse

AlGaN/GaN hybrid MOS-HEMT analytical mobility model

A. Pérez-Tomás ⇑, A. Fontserè
Institut de Microelectrònica de Barcelona IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Catalonia, Spain

a r t i c l e i n f o a b s t r a c t

Article history: Since it is naturally normally-off, the hybrid AlGaN/GaN MOS-HEMT has a tremendous potential for an
Received 19 July 2010 advanced GaN-based power switch. An analytical model for the hybrid AlGaN/GaN HEMT on-resistance
Received in revised form 8 November 2010 is presented in this paper. The methodology presented here can aid the designers to understand the phys-
Accepted 19 November 2010
ics and to electrically characterize the new generation of GaN based devices. The models proposed here
Available online 21 December 2010
can also easily be implemented in TCAD simulation packages where models for GaN devices are not
The review of this paper was arranged by mature.
Prof. S. Cristoloveanu Ó 2010 Elsevier Ltd. All rights reserved.

Keywords:
GaN
AlGaN
Hybrid MOS-HEMT
MOSFET
HEMT
Model
On-resistance

1. Introduction 40 W/mm [3]. For high-voltage power switching applications, the

It is generally assumed that the new generation of power de-
vices for power converters will be based on Wide Band Gap
(WBG) semiconductors to replace traditional silicon power
switches. The use of these new power semiconductor materials
will allow increasing the efficiency of the electric energy transfor-
mations for a more rational use of electric energy thus reducing
carbon footprint. The most promising WBG semiconductor materi-
als are SiC and GaN. One of the most interesting properties of GaN
for power application is the high electron mobility of the two
dimensional electron gas (2DEG) formed in AlGaN/GaN hetero-
structures offering high electron mobilities (over 1200 cm2/V s).
In recent years, GaN high electron mobility transistors (HEMTs)
have attracted most attention with impressive trade-off between
specific on-resistance and breakdown voltage. The GaN HEMTs
are expected as microwave power devices used for base station
of cellular phone and switching power devices used in the inverter
DC/DC converter for the motor and generator [1]. Since the demon-
stration of the first GaN-based HEMT switches [2], rapid progress
has been made in the development of GaN-based HEMT devices.
Output power densities at microwave frequencies of GaN-based
HEMTs on both sapphire and SiC substrates have improved during
the last decade with high output power capability larger than
⇑ Corresponding author. Tel.: +34 93 594 77 00; fax: +34 93 580 14 96.
E-mail address: amador.perez@imb-cnm.csic.es (A. Pérez-Tomás).
Lateral Double Diffused structure (LDD-MOSFET) has the advan-
tage of naturally normally-off operation and large conduction band
offset, which makes it less susceptible to hot electron injection and
other reliability problems, in particular those related with surface
states and current collapse. With an acceptable quality SiO2/GaN
interface, GaN MOSFETs are viable. Lateral GaN MOSFETs with rel-
atively high channel mobility (a peak of 170 cm2/V s) and high
blocking voltage (2.5 kV) have been demonstrated [4].
Therefore GaN MOSFET has the advantages of normally-off
operation without current collapse problems. However, GaN MOS-
FET currently exhibits – and probably it will be an unsolved major
problem as in the case of SiC – modest inversion channel mobility
(below 300 cm2/V s) due to the presence of interface states, surface
roughness and other scattering mechanisms. A way to around this
could be the incorporation of AlGaN/GaN heterostructure into the
RESURF region of GaN MOSFETs. A hybrid MOS-HEMT [5–8] has
the advantage of both the MOS gate control and the high mobility
2DEG in AlGaN/GaN drift region. A cross-section of the hybrid
MOS-HEMT analyzed here is presented in Fig. 1.
This hybrid MOS-HEMT has a tremendous potential to be one of
the key advanced GaN-based power switches. In this work, we
present simple analytical modelling for understanding the influ-
ence of the main design parameters on the on-resistance of a hy-
brid MOS-HEMT. Our starting point is physical based models for
HEMT and MOSFETs which are subsequently combined to deter-
mine the on-resistance of the hybrid MOS-HEMT.

0038-1101/$ - see front matter Ó 2010 Elsevier Ltd. All rights reserved.
doi:10.1016/j.sse.2010.11.016
202 A. Pérez-Tomás, A. Fontserè / Solid-State Electronics 56 (2011) 201–206

Fig. 1. Cross-sectional view of a hybrid MOS-HEMT.

2. GaN MOSFET and AlGaN/GaN HEMT on resistance gion (or extended drain) to improve the breakdown voltage is consid-
ered (LD-MOSFET). There, LD is the drift region length, ND is the
One great advantages of GaN as power semiconductor substrate doping of the drift region, lB is the bulk n-type extended drain mobil-
is that transistor effect could be achieved by defining the inversion ity (lB is a function of ND and the temperature) and Xj is the carrier
channel under a MOS gate or by taking advantage of the hetero- flow depth in the extended drain region. For the HEMT, the sheet car-
interface 2DEG charge centroid (Fig. 2). Both mechanisms are dis- rier density on the 2D electron gas, ns, may be determined by means
cussed briefly in the next section. In MOSFET and HEMT transistors of Hall bar measurements and/or capacitance measurements. ln is in
on-resistance have been linked to the channel layout and electron this case the mobility of electrons in the 2DEG channel. The sheet car-
mobility properties by analytical relationships for low transverse rier density on the 2D electron gas, ns, can been determined by means
fields [9]: of Hall bar measurements and/or capacitance measurements. Cox is
  the gate oxide capacitance per unit area.
Lch LD
Ron ðMOSFETÞ ¼ Ron;M ¼ þ ðL þ L Þ
ln C ox ðV gs  V th Þ qlB ND Xj ch D
2.1. MOS inversion channel mobility
ð1Þ

L2ds The MOSFET principle of operation in GaN is not substantially

Ron ðHEMTÞ ¼ Ron;H ¼
qln ns
where ln is the mobility of carriers in the inversion channel, Vgs the
gate to source voltage and Vth is the threshold voltage. C ox ¼ er e0 t1
ox
is the gate insulator capacitance per unit area, where er is the gate
insulator dielectric constant and tox is the gate insulator thickness.
The second term of Ron(MOSFET) is included if a low doped drift re-
ð2Þ different from one transistor defined on silicon which is well known.
The main but crucial difference is the lack of a high quality native
thermal oxide which results in a poor interface. The mobility of car-
riers in the inversion channel of a MOSFET device is always a part of
the carrier mobility in the semiconductor bulk (lB). The widely ac-
cepted model consisting of the first three terms of (3) provides a
good description of channel mobility for silicon MOSFETs [10]:

Fig. 2. Cross-sectional view of a power LD-MOSFET and a power HEMT.

 A. Pérez-Tomás, A. Fontserè / Solid-State Electronics 56 (2011) 201–206 203

 1
1 1 1 1 to a quantization of the energy-band structure into sub-bands.
lMOS ¼ þ þ þ ð3Þ The main scattering mechanisms in a 2DEG channel are well
lB lac lsr lc
reported [14]. The 2DEG mobility is modelled analytically as the
There, lac is the carrier mobility limited by the acoustic phonons sum of several contributions including acoustic deformation-po-
scattering and lsr is the carrier mobility limited by surface rough- tential, piezoelectric, polar optic phonon, alloy disorder, interface
ness scattering. It has been proposed [10–12] mobility models for roughness, dislocation and remote modulation doping scattering.
describing the mobility degradation observed in MOSFET devices Therefore, the total relaxation time could be calculated as the
due to Coulomb scattering effects at interface traps (lc). Generally, sum of the relaxation times due to each scattering process follow-
in GaN and SiC MOSFETs this interface trap Coulomb scattering lim- ing again the Matthiessen’s Rule. At temperatures above 80 K,
iting mechanism is so relevant that the approximation ln(MOS- the validity of this relation becomes questionable due to the
FET) ’ lc could be used, in particular at the lower gate bias and at relaxation-time approximation made for inelastic optical pho-
low temperature. (T = 25 °C). Phenomenologically, we have demon- non scattering. However, the polar optical phonon scattering
strated [10] that MOS inversion mobility in a highly defective GaN/ (ln(HEMT) ’ lpo) is the dominant scattering mechanism for the
insulator interface could be well fitted by determining Qinv and 2DEG in a wide temperature range since the impurity scattering
Qtrap: is minimized, due to spatial separation of electrons and ionized
Q binv Qb impurities, being especially true for temperatures above 300 K.
A
lc ¼ T þ NT a ’ NT a inv ð4Þ Eq. (5) describes this mobility for a 2DEG using the conventional
Q trap Q trap Q trap
relaxation-time approximation for the case when the optical-pho-
where A and N are fitting constants, a and b are empirical constants non energy is greater than the thermal energy [15]:
for describing the screening of the scattering charges by the mobile 0 0 11
1 1 2  hx  mph2 ns
charges in the inversion layer and experimentally determined to ðe1
s;1  es Þ k0 
h 0 1  e k T
B

be a = b  1. This expression is in complete agreement with com- l2D;po ¼ e kB T  1 @1 þ m kB T @

 AA
2pqx0 m2 Fðk0 Þ ph 2 ns
plex theoretical models. For example, if one assume a fixed charge
distribution of ionized traps on the interface and treating the ran- ð5Þ
dom spatial fluctuations of charge density as a quantum mechanics  1=3
bð8b2 þ9k0 bþ3k20 Þ 33pm q2 ns
perturbation [13]. The free carrier screening effect introduces the where Fðk0 Þ ¼ and b ¼ , es,1 is the permit-
8ðk0 þbÞ3 h2
2k0 
dependence on the inversion charge [11]. It is worth to mention
tivity of the semiconductor at high frequencies and ⁄x0 is the en-
that a peculiarity of the MOS system in GaN is the possible presence
ergy of the polar optical phonon, The wave vector of the polar
of polarization charges that also could provoke some additional pffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi
optical phonon is computed by k0 ¼ 2m x0 = h. In this case, the
deviations of the MIS classic theory.
form factor F(k0) depends on the channel geometry and in the nar-
row channel near the hetero-interface. As for the case of MOSFETs,
2.2. AlGaN/GaN 2DEG channel mobility at room temperature and
simpler empirical relationships for the polar-optical mobility have
above
been proposed [16]:
The physics behind the HEMT transistor is notably different. It C D C
has been suggested [14] that surface AlGaN donor-like traps are l2D;po ’ þ ’ ð6Þ
nd1
s T
c1 nds T c nds T c
the source of the electrons in the 2DEG channel, being these elec-
trons driven into the channel by the strong polarization fields. Eq. (6) may be considered as an interpolation between the temper-
Effectively, the positively charged donors in the AlGaN produce ature dependence near 77 K (d1; c1) and the temperature depen-
an electric field which creates a potential well in the GaN buffer, dence near 300 K (d; c). At elevated temperatures, Eq. (5)
confining electrons to a narrow strip at the interface, and leading simplifies then to the last term.

Fig. 3. (a) Computed Qtrap and Qinv and experimental ns [17] vs. temperature. (b) Experimental (symbols) vs. simulated (solid lines) electron mobility for MOSFETs and HEMTs.
204 A. Pérez-Tomás, A. Fontserè / Solid-State Electronics 56 (2011) 201–206

2.3. MOSFET vs. HEMT
Eqs. (4) and (6) are physical-based expressions for describing
the electron transistor mobility on the MOS inversion and 2DEG
channel at elevated temperatures, respectively. Qtrap and Qinv may
be calculated following the procedure described in [10]. A
charge-sheet model simplifies the calculation of inversion charge
assuming that the inversion layer is a charge sheet of infinitesimal
thickness. The charge-sheet model equations are also used to com-
pute the average effective field in the inversion layer. The reason
for the large mobility difference depicted in Fig. 3 is that, in the
MOSFET, conduction electrons occupy the same space region than
ionized impurities and hence, channel mobility is limited (in the
ideal case of a perfect MOS interface) at least by bulk carrier mobil-
ity (lB). MOSFET mobility is in practice a fraction of the semicon-
ductor bulk mobility due to scattering effects at the MOS
interface, mainly Coulomb scattering at interface traps, that is dra-
matically relevant in GaN based MOSFETs. In HEMTs polar optical
phonon limited mobility is already higher than the bulk mobility
for GaN under the same transverse electric field.
3. AlGaN/GaN hybrid MOS-HEMT analytical mobility model
The hybrid MOS-HEMT specific on-resistance depends on the
layout parameters (LGS, LG and LGD), the carrier concentration in
the 2DEG (ns) and in the inversion channel (Cox(Vgs  Vth)) and their
respective mobility values, l2DEG and lMOS. In the simplest of MOS-
FET theories (which is in the basis of the MOS term of Eq. (1) [19])
Qinv = q1Cox(Vgs  Vth) is obtained from a standard parallel-plate
capacitor where the charge on the capacitor plates is equal to the
capacitance times the voltage drop between the plates. The charge
added to the gate is balanced by an increase in the inversion layer
charge. This expression is already useful because can provide valu-
able information to the device designers. Computations have been
performed taking into account the values commonly reported on
the literature on the previous values and listed in Table 1.
A conventional device layout of 1.5/1/6 lm (LGS/LG/LGD) has
been chosen which is typical of power HEMTs for the range of
the 600 V. For a given gate bias, the hybrid MOS-HEMT is strongly
dependent on MOS channel mobility which is presumably the
more difficult parameter to control. As it can be seen in Fig. 4 the
Ron increases as the channel mobility reduces from the state-of-
the art value of 200 cm2/V s [4] to values of 20–100 cm2/V s. To de-
posit an oxide on the selectively etched channel region would re-
sult in an oxide interface with rougher interfaces and with a

The hybrid MOS-HEMT model presented here is based in the

assumption that the device is formed by 2DEG channels between
source/gate and gate/drain in series with the inversion channel be-
low the gate. In the structures proposed by Kambayashi et al. [6]
the MOS channel is formed in a Mg doped p-type region with a
doping of 1  1017 cm3. Therefore the expression for the specific
on-resistance can be rewritten as the sum of the different terms
contributing to the on-resistance hybrid MOS-HEMT on-resistance
Ron(HMOS–HEMT) = Ron,HM-H [18]:
 
LGS LGD LG
Ron;HM-H ¼ þ þ þ 2Rh
qln ns qln ns ln C ox ðV gs  V th Þ
 ðLGS þ LGD þ LG þ 2X h Þ ð7Þ
The term Rh describes the additional resistance coming from the
inversion channel formed on the non-intentionally doped (NiD)
GaN region between the 2DEG and the p-type GaN of length Xh
(Fig. 1). In the simplest picture it could be considered that the
NiD region is thin enough for being comparable to the quantum
well width where is confined the 2DEG and 2Xh  LGS + LGD + LG. Fig. 4. Computed on-resistance vs. gate bias or the MOSFET, HEMT and hybrid
Therefore, attending to this simplified view we consider that there MOS-HEMT for MOS mobilities of 20 cm2/s and 200 cm2/s.
is direct contact between the 2DEG below the AlGaN and the inver-
sion channel on the p-type region. Then the previous equation can
be reduced to:
 
LGS þ LGD LG
Ron;HM-H ’ þ ðLGS þ LGD þ LG Þ ð8Þ
ql2DEG ns lMOS C ox ðV gs  V th Þ

Table 1
Parameters included in the computation of the on-resistance of the hybrid MOS-
HEMT.

Parameter Units Value References

HEMT
LGS lm 1.5
LGD lm 6
l2DEG cm2/V s 1400 (Typical)
ns cm2 1  1013 (Typical)
MOSFET
LG lm 1
lMOS cm2/V s 20–200 [4,8,7,10]
Cox F/cm2 8.6  108 (40 nm SiO2)
Vth V 1 Fig. 5. Hybrid MOS-HEMT computed on-resistance vs. MOS mobility value for
different channel lengths.
 A. Pérez-Tomás, A. Fontserè / Solid-State Electronics 56 (2011) 201–206
Fig. 6. Hybrid MOS-HEMT computed on-resistance vs. insulator thickness for
different dielectrics (SiO2, SiNx, Al2O3 and HfO2).
higher density of interface states. For this reason the channel
mobility should be lower than in the best epi GaN material.
One straightforward method of reducing the on-resistance is to
reduce the MOS channel length for a given MOS mobility as it is
shown in Fig. 5. It can be seen from the figure that for the smaller
MOS gates (LG < 1 lm) the on-resistance value approaches to the
one from the HEMT even for a reduced value of the channel elec-
tron mobility of 200 cm2/V s. A way of reducing further the channel
on-resistance is shown in Fig. 6 using insulators with higher dielec-
tric constant. It has been calculated the Ron for an hybrid MOS-
Fig. 7. HEMT mobility dependence on: (a) T and (c) ns. (b) MOS Qinv dependence on T. Qinv(T) is computed by a temperature dependent charge-sheet model for Vgs  Vth = 4 V
giving a value of n = 2.4 [10]. HEMT mobility constants c = 2.7 and d = 0.3 have been fitted to the computed Eq. (5) for ns = 1  1013 cm2 and T = 300 K, respectively.
205
HEMT (LG = 1 lm lMOS = 50 cm2/V s) for SiO2 and different com-
mon high-k dielectrics. The dielectric constant is 7.4, 10 and 20
for SiNx, Al2O3 and HfO2, respectively [20–22]. For a given gate
insulator thickness the lower on-resistance is achieved for the
dielectrics with the higher dielectric constant.
For investigating the temperature behavior of the Ron, it is re-
quired to make use of the physical models as the described previ-
ously in Section 2. If we assume that all the scattering mechanism
in the MOS channel is Coulomb scattering in the interfacial traps,
the hybrid MOS-HEMT on-resistance is:
" #
Tc Q trap ðTÞ
Ron;HM-H ’ C 0 ðLGS þ LGD Þ þ N 0 LG ðLGS þ LGD þ LG Þ
qn1d
s ðTÞ qQ 2inv ðTÞT a
ð9Þ
In Fig. 3a is presented the typical temperature dependence of
Qtrap(T), Qinv(T) and ns(T). It can be seen that both ns(T) and Qtrap(T)
are a weak function of the temperature, which has been verified
experimentally [17]. In the case of Qtrap(T) the temperature depen-
dence is due to the band-gap narrowing with T, which is consid-
ered a second order effect in this model. For Qinv(T) it has been
defined a power law of the form: Qinv(T) = Qinv,0(T/T0)n where
T0 = 300 K. Qinv(T) is computed by temperature dependent
charge-sheet model for Vgs  Vth = 4 V giving a value of n = 2.4
[10]. HEMT mobility constants c = 2.7 and d = 0.3 have been fitted
to the computed Eq. (5) (⁄x0 = 91.2 meV, m⁄/m0 = 0.2, es = 8.9 and
es,1 = 5.35) for ns = 1  1013 cm2 and T = 300 K, respectively
(Fig. 7). The hybrid MOS-HEMT Ron is then:
" #
Tc Q trap
0 0
Ron;HM-H ’ C ðLGS þ LGD Þ 1d þ N LG 2 ðLGS þ LGD þ LG Þ
qns Q inv ;0 T 1þ2n
ð10Þ
206 A. Pérez-Tomás, A. Fontserè / Solid-State Electronics 56 (2011) 201–206
Fig. 8. Computed on-resistance vs. temperature for the MOSFET, HEMT and hybrid
MOS-HEMT.
In Fig. 8 is simulated presented the dependence of the Ron with T for
Ron,H, Ron,M and Ron,HM-H. The parameters used in the simulations
are ns = 1  1013 cm2, C0 = C1 = 1.84  1014 V s/cm2+dKc (l2D,po =
1400 cm2/V s), Qinv,0 = 2.4  1011 cm2, Qtrap = 1.5  10 12 cm2
(0.7  10 12 cm2) and N0 = N1 = 1.04 KaV s/cm2 0.52 Ka V s/cm2)
for lMOS(300K) = 50 cm2/V s (200 cm2/V s). As it can be inferred
from Fig. 8, the simulations suggest that the hybrid MOS-HEMT
exhibits better stability at elevated temperatures than the MOSFET
and the HEMT. The reason is that we have two competing mecha-
nisms (that have the opposite behavior with T) establishing the
forward current in the hybrid MOS-HEMT. The MOS Coulomb scat-
tering mobility has a positive behavior with T which gives the
reduction of the on-resistance with T. Oppositely, HEMT phonon
scattering mobility has a negative behavior with T and the hybrid
MOS-HEMT dependence should be determined by the trade-off
between both mechanisms. In fact, this temperature behavior
competition within the hybrid MOS-HEMT may be engineering
somehow to mitigate the temperature degradation inevitable in
pure HEMT devices due to the phonons and then, resulting in
enhanced thermal stability.
Oka and Nozawa [8] has presented a mobility profile extracted
on Þ
@ids
from the transconductance g m ¼ @V gs
¼ V ds WðLGS þ LGD þ LG Þ @ðR
@V gs
which presents a 120 cm2/V s peak at a gate voltage of 6 V and then
abruptly decrease to around 60 cm2/V s at 10 V. This lFE ¼ WCLoxGV g m
profile may be considered as an indication of surface roughness
scattering mechanism. Then, an additional term should be included
to the lMOS equation taking into account the surface roughness
scattering mechanism, l1MOS  lSR þ lc . Matsumoto and Uemura
1 1
[23] reported a very simple and popular approximation for the sur-
face roughness mobility:
D [21] Yue Y-Z, Hao Y, Feng Q, Zhang J-C, Ma X-H, Ni J-Y. Sci China Ser E – Technol Sci
lsr ðE? Þ ¼
E2?
where E\ is the perpendicular electric field, and D is a fitting param-
eter. the effective field at the interface could be determined with
E? ¼ e1
s ðQ inv =2 þ Q dep Þ, where es is the semiconductor dielectric
View publication stats
constant which can be calculated following the procedure described
in [24]. Surface roughness scattering increases with T and if this
mechanism is relevant Ron,M (and hence Ron,HM-H) will also increase
with T.
4. Conclusions
A hybrid MOS-HEMT has the advantage of both the MOS gate
control and the high 2DEG mobility in AlGaN/GaN drift region. In
this work, we present simple analytical modelling for understand-
ing the influence of the main design parameters on the on-resis-
tance of a hybrid MOS-HEMT. In particular we investigate the
effect of the layout, the reduced MOS channel mobility, the influ-
ence of different high-k dielectrics and the temperature by means
of physical models for MOSFET and HEMT devices. It is suggested
that an hybrid MOS-HEMT is still competitive in terms of Ron if
the gate length is maintained sufficiently small even for modest
MOS channel mobilities below 100 cm2/V s. A high-k dielectric
could even improve this figure The methodology presented here
can aid the designers to understand the device physics and the
model can also easily be implemented in TCAD simulation pack-
ages, where models for GaN devices are not mature.
References
[1] Ikeda N, Kaya S, Li J, Sato Y, Kato S, Yoshida S. In: Proceedings of the
international symposium power devices and ICs, ISPSD’2008; 2008. p. 287–90.
[2] Khan MA, Kuznia JN, Olson DT, Schaff WJ, Burm JW, Sur MS. Appl Phys Lett
1994;65:1121–3.
[3] Wu Y-F, Moore M, Wisleder T, Saxler A, Parikh P. In: Proceedings of the IEEE
device research conference; 2006. p. 151–2.
[4] Huang W, Chow TP, Niiyama Y, Nomura T, Yoshida S. In: Proceedings of the
international symposium on power devices and ICs, ISPSD’2008; 2008. p. 291–
4.
[5] Tang K, Li Z, Chow TP, Niiyama Y, Nomura T, Yoshida S. In: Proceedings of
ISPSD 2009, Barcelona, Spain; 2009. p. 279–82.
[6] Kambayashi H, Satoh Y, Ootomo S, Kokawa T, Nomura T, Kato S, et al. Solid-
State Electron 2010;54:660.
[7] Im K-S, Ha J-B, Kim K-W, Lee J-S, Kim D-S, Hahm S-H, et al. IEEE Electron Dev
Lett 2010;31:192.
[8] Oka T, Nozawa T. IEEE Electron Dev Lett 2008;29:668.
[9] Zhang N-Q, Moran B, DenBaars SP, Mishra UK, Wang XW, Ma TP. Phys Status
Sol (a) 2001;188:213.
[10] Pérez-Tomás A, Placidi M, Perpiñà X, Constant A, Godignon P, Brosselard P,
et al. J Appl Phys 2009;105:114510.
[11] Potbhare S, Goldsman N, Pennington G, Lelis A, McGarrity JM. J Appl Phys
2006;100:044516.
[12] Pérez-Tomás A, Godignon P, Mestres N, Millán J. Microelectron Eng
2006;83:440.
1
[13] Pérez-Tomás A, Placidi M, Baron N, Chenot S, Cordier Y, Moreno JC, et al. J Appl
Phys 2009;106:074519.
[14] Hsu L, Walukiewicz W. Phys Rev B 1997;56:1520.
[15] Gelmont BL, Shur M, Stroscio M. J Appl Phys 1994;77:657.
[16] Lee K, Shur MS, Drummond TJ, Morkoç H. J Appl Phys 1983;54:6432.
ds
[17] Jacquet JC, Aubry R, Gérard H, Delos E, Rolland N, Cordier Y, et al. In:
Proceedings of the 12th GAAS symposium, Amsterdam, Netherlands; 2004. p.
235.
[18] Saito W, Takada Y, Kuraguchi M, Tsuda K, Omura I. IEEE Trans Electron Dev
2006;53:356.
[19] Pierret RF. Field effect devices. Modular series on solid state devices, v. 4.
Reading, USA: Addison-Wesley; 1983.
[20] Yagi S, Shimizu M, Inada M, Yamamoto Y, Piao G, Okumura H, et al. Solid-State
Electron 2006;50:1057–61.
ð11Þ 2009;52:2762–6.
[22] Liu C, Chor EF, Tan LS. Appl Phys Lett 2006;88:173504.
[23] Matsumoto Y, Uemura Y. In: Proceedings of the 2nd international conference
solid surfaces; 1974. p. 367–70.
[24] Pérez-Tomás A, Brosselard P, Godignon P, Millán J, Mestres N, Jennings MR,
et al. J Appl Phys 2006;100:114508.