Seat No.: ________ Enrolment No.

___________

GUJARAT TECHNOLOGICAL UNIVERSITY

BE - SEMESTER–VII (NEW) EXAMINATION – WINTER 2021
Subject Code:3173907 Date:15/12/2021
Subject Name:Lithography
Time:10:30 AM TO 01:00 PM Total Marks: 70
Instructions:
1. Attempt all questions.
2. Make suitable assumptions wherever necessary.
3. Figures to the right indicate full marks.
4. Simple and non-programmable scientific calculators are allowed.

MARKS

Q.1 (a) Define: Lithography? 3

(b) Differentiate: Positive and negative resists. 4
(c) Explain: Photochemistry of resists in the vicinity of lithography. 7

Q.2 (a) What do you mean by Photoresist? 3

(b) Differentiate: Soft Bake vs Hard bake 4
(c) Write a short note on history of lithography. 7
OR
Write a short note on importance of 3D atomic force microscopy
(c) 7
(AFM3D) in lithography.
Q.3 (a) Define: Residual Layer 3
(b) In brief explain :Adhesion Promotion 4
(c) Write a shote note on Nano imprint with its applications. 7
OR
Q.3 (a) What do mean by dry etching? 3
(b) Write the applications of XRL. 4
Explain: Ellipsometry characterization during and after the
(c) 7
lithography.
Q.4 (a) What do mean by pattern sidewall angle (SWA)? 3
(b) Explain: Physics of X-ray lithography 4
(c) Write a shot note basic principle and working of X-ray lithography. 7
OR
Q.4 (a) Define: Optical diffractometry 3
(b) Explain: The residual layer problem in Nano Imprint lithography. 4
(c) Explain: Critical Dimension (CD) metrology. 7
Q.5 (a) Define: High aspect ratio. 3
(b) Explain: need of metrological during a lithograph. 4
(c) Explain : X-ray absorption in a resist 7
OR
Q.5 (a) What do mean by transfer of the pattern? 3
(b) Explain: Matter–electron interaction 4
Explain: Scanning electron microscopy (SEM) in the vicinity of
(c) 7
lithography.
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