J , One.

C/

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

2N4302
N-Channel JFET Silicon Transistor
General Purpose AF Amplifier

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Drain-Source Voltage, VDS 25V
Drain-Gate Voltage, VDG 25V
Gate-Source Voltage, VGS -25V
Gate Current, IQ 10mA
Total Device Dissipation (TA = +25°C), PD 300mW
Derate Above 25°C 2mW/°C
Operating Junction Temperature Range, Tj -55° to +150°C
Storage Temperature Range, Tstg -55° to +150°C
Lead Temperature (During Soldering, 1/16" from case for 10sec), TL +260°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit
Gate-Source Breakdown Voltage V(BR)GSS IG = 1uA VDS = 0 -25 - - V
Gate Reverse Current IGSS VGS = 20V, VDS = o - - -1 nA
VGS ~ 20V. VDS = 0, TA = +1 50°C - - -1 M-A
Gate-Source Cutoff Voltage VGS(off) I D =1HA,V D S =15V - - -6.5 V
Gate-Source Voltage VGS lD = 50u.A,VDS = 15V -0.4 - -6.0 V
Zero-Gate-Voltage Drain Current bss VDS = 15V, VGS = 0 0.5 - 15 mA
Forward Transfer Admittance lyfsl VDS = 15V, VGs = 0, f = 1kHz 1000 - 7500 u.mho

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
 .207 (5.28) Dia

.060
(1.52)
Min

Seating
Plane

018(0.45)

.100 (2.54) Dia

Drain

Source Gate