BC859

PNP Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications.

The transistor is subdivided into three groups A, B

and C, according to its DC current gain.

As complementary type the NPN transistor BC849 is

recommended.

SOT-23 Plastic Package

Absolute Maximum Ratings (Ta=25 OC)

Symbol Value Unit

Collector Base Voltage -VCBO 30 V

Collector Emitter Voltage -VCEO 30 V

Collector Emitter Voltage -VCES 30 V

Emitter Base Voltage -VEBO 5 V

Collector Current -IC 100 mA

Peak Collector Current -ICM 200 mA

Peak Base Current -IBM 200 mA

Peak Emitter Current IEM 200 mA

Power Dissipation Ptot 200 mW

Thermal Resistance Junction to Ambient Air RθJA 450 O

C/W

Thermal Resistance Junction to Substrate Backside RθSB 320 O

C/W

Junction Temperature TJ 150 C

O

Storage Temperature Range TS -65 to +150 C

O

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
BC859

Characteristics at Ta =25 OC

Symbol Min. Typ. Max. Unit

h-Parameters at -VCE=5V, -IC=2mA, f=1KHz
Current Gain Current Gain Group A hfe - 220 - -
B hfe - 330 - -
C hfe - 600 - -

Input Impedance Current Gain Group A hie 1.6 2.7 4.5 KΩ

B hie 3.2 4.5 8.5 KΩ
C hie 6.0 8.7 15 KΩ

Output Admittance Current Gain Group A hoe - 18 30 µS

B hoe - 30 60 µS
C hoe - 60 110 µS

. -4
Reverse VoltageTransfer Ratio Current Gain Group A hre - 1.5 10 - -
. -4
B hre - 2 10 - -
. -4
C hre - 3 10 - -
DC Current Gain
Current Gain Group A hFE 110 - 220 -
at -VCE=5V, -IC=2mA
B hFE 200 - 450 -
C hFE 420 - 800 -

Collector–Emitter Saturation Voltage

at -IC=10mA, -IB=0.5mA -VCEsat - - 300 mV
at -IC=100mA, -IB=5mA -VCEsat - - 650 mV
Base-Emitter On Voltage
at -IC=2mA, -VCE=5V -VBE(on) 600 - 750 mV
at -IC=10mA, -VCE=5V -VBE(on) - - 820 mV

Collector Cutoff Current

at -VCB=30V -ICBO - - 15 nA
at -VCB=30V, TJ=150OC -ICBO - - 5 µA

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
BC859

Characteristics at Tamb=25 OC

Symbol Min. Typ. Max. Unit

Gain Bandwidth Product

at -VCE=5V, -IC=10mA, f=100MHz fT - 150 - MHz

Collector Base Capacitance

at -VCB=10V, f=1.0MHz CCBO - - 6 pF

Noise Figure
at -IC=200µA, -VCE=5V, RG=2KΩ, f=1.0kHz, Δf=200Hz F - - 4 dB
at -IC=200µA, -VCE=5V, RG=2KΩ, f=30...15000Hz F - - 4 dB

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
BC859

Admissible power dissipation Collector current

versus temperature of substrate backside versus base emitter voltage

mW mA
500 2
10
-VCE=5V
5 Tamb=25 oC
4
3
400
2

10
P tot 300 -IC
5
4
3
2
200
1

5
100 4
3

0 10 -1
0 200 oC 0 0.5 1V
100
TSB -VBE

Pulse thermal resistance Gain bandwidth product

versus pulse duration (normalized) versus collector current

MHz
10 10 3
0.5 7 Tamb=25 o C
5
4
3 5
2 0.2 4
3
0.1
10 -1
r thSB 2 -VCE=10V
5
0.05 fT
R thSB 5V
4
3 0.02 10 2 2V
2
0.01 7
-2
10
5
5 -3 4
5
tp 3
4
3 tp
2 v=0 v= PI
T 2

10 -3 T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1s 10
0.1 2 5 1 2 5 10 2 5 100mA
tp -IC

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
BC859

Collector saturation voltage DC current gain

versus collector current versus collector current

V
0.5 3
10
-I C/-I B =20 -VCE=5V
5
4 100 C
o
3
0.4
2 o
=2 5 C
Tamb
10 2
-VCEsat 0.3 h FE
o
-50 C
5
4
3

0.2 2

Tamb=100 C
o 10
o
25 C
0.1 5
4
3
-50 o C 2

0
1
10 -1 2 5 1 2 5 10 2 5 102 mA 10 -2 10-1 1 10 10 2 mA
-I C -I C

Noise figure Noise figure

versus collector current versus collector emitter voltage

dB dB
20 20
-VCE=5V -I C=0.2mA
f=1KHz R G=2K
18 Tamb=25o C 18 f=1KHz
o
100K Tamb=25 C
16 16

F 14 500
14
10K F
R G=1M
12 12
10 10
1K
8 8
6 6
500
4 4
2 2
0 0
10 -3 10 -2 10 -1 1 10 mA 10 -1 2 5 1 2 5 10 2 5 102 V
-I C -VCE

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
BC859

Collector-Base cutoff current Collector-base capacitance,

versus ambient temperature Emitter-base capacitance
versus reverse bias voltage

nA pF
4
10 20
Tamb=25 o C
18
3
10 16

14
2 CCBO
-I CBO 10 CEBO 12
10
CEBO
10 8
CCBO
6

1 Test voltage -VCBO: 4

equal to the given
maximum value -VCEO 2
typical
10 -1 maximum
0
o
0 100 200 C 0.1 2 5 1 2 5 10V

Tj -VCBO,-VEBO

Relative h-parameters Noise figure

versus collector current versus collector current

dB
2 20
10 -VCE=5V
6 f=120Hz
18 Tamb=25o C
4
16 R G=1M 100K 10K 1K
2
F 14
h ie 500
10
he(-I C) 12
he(-I C=2mA) 6
4 10

2 8
h re

1 6
6
h fe 4
4
2
2
h oe -VCE=5V
Tamb=25o C 0
10 -1 10 -3 10 -2 10 -1 1 10 mA
10 -1 2 4 1 2 4 10mA
-I C
-I C

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005