HIGH TEMPERATURE GaAlAs IR EMITTERS OD-880FHT

1.00
FEATURES
MIN.
ANODE • Extended operating temperature range
(CASE)
GLASS
DOME .015
.209
.220
• No internal coatings
• No derating or heat sink required to 80°C

.183 .152
.100
All surfaces are gold plated. Dimensions are nominal
.186 .154
values in inches unless otherwise specified. Window
.041 caps are welded to the case.

13
.017
.030
.040
.036
CATHODE

20
.197 45°
.205

R
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

E
PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS

MB
Total Power Output, Po IF = 100mA 6 8 mW
Peak Emission Wavelength, λP 880 nm
Spectral Bandwidth at 50%, Δλ IF = 50mA 80 nm
CE
Half Intensity Beam Angle, θ 8 Deg
Forward Voltage, VF IF = 100mA 1.55 1.9 Volts
Reverse Breakdown Voltage, VR IR = 10μA 5 30 Volts
Capacitance, C VR = 0V 17 pF
DE

Rise Time 0.5 μsec

Fall Time 0.5 μsec
E

ABSOLUTE MAXIMUM RATINGS AT 25°C CASE

F

Power Dissipation1 190mW

LI

Continuous Forward Current 100mA

Peak Forward Current (10μs, 400Hz)2 3A
Reverse Voltage 5V
OF

Lead Soldering Temperature (1/16" from case for 10sec) 260°C

1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
D

THERMAL PARAMETERS
EN

Storage and Operating Temperature Range -65°C TO 150°C

Maximum Junction Temperature 150°C
Thermal Resistance, RTHJA1 370°C/W Typical
Thermal Resistance, RTHJA2 120°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C

1260 Calle Suerte, Camarillo, California 93012

Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com

Revision February 26, 2013

HIGH TEMPERATURE GaAlAs IR EMITTERS OD-880FHT
THERMAL DERATING CURVE MAXIMUM PEAK PULSE CURRENT
200 10

180
t = 10μs

PEAK FORWARD CURRENT, Ip (amps)

160 INFINITE
HEAT SINK

POWER DISSIPATION (mW)

140 t = 100μs
1
120 NO
HEAT SINK t = 500μs
MAXIMUM RATINGS
100

80 t
t D=
0.1 T
60
Ip

13
40
T
20

0 0.01
25 50 75 100 125 150 0.01 0.1 1 10 100

20
AMBIENT TEMPERATURE (°C) DUTY CYCLE, D (%)

DEGRADATION CURVE RADIATION PATTERN

100 100
TYPICAL CHARACTERISTICS

IF = 20mA

ER
RELATIVE POWER OUTPUT (%)

RELATIVE POWER OUTPUT (%)

90 80

IF = 50mA
80 60

MB
70 40

TCASE = 25°C
60 NO PRE BURN-IN PERFORMED 20
IF = 100mA

50
101 102 103
STRESS TIME, (hrs)
104 CE 105
0
–25 –20 –15 –10 –5 0 5
BEAM ANGLE, θ(deg)
10 15 20 25
DE
FORWARD I-V CHARACTERISTICS POWER OUTPUT vs TEMPERATURE
4 1.5
1.4
FORWARD CURRENT, IF (amps)

1.3
RELATIVE POWER OUTPUT

3
1.2
FE

1.1

2 1.0

0.9
LI

0.8
1
0.7

0.6
OF

0 0.5
0 1 2 3 4 5 6 –50 –25 0 25 50 75 100
FORWARD VOLTAGE, VF (volts) AMBIENT TEMPERATURE (°C)

SPECTRAL OUTPUT POWER OUTPUT vs FORWARD CURRENT

100 1,000
D RELATIVE POWER OUTPUT (%)

80
POWER OUTPUT, Po (mW)
EN

100
60

40
10
DC
PULSE
20 10μs, 100Hz

0 1
750 800 850 900 950 1,000 10 100 1,000 10,000
WAVELENGTH, λ(nm) FORWARD CURRENT, IF (mA)

1260 Calle Suerte, Camarillo, California 93012

Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com

Revision February 26, 2013