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Bulletin PD-21079 08/05

60EPU02PbF
60APU02PbF
Ultrafast Soft Recovery Diode
Features
• Ultrafast Recovery
• 175°C Operating Junction Temperature trr = 35ns
• Lead-Free ("PbF" suffix)
IF(AV) = 60Amp
Benefits
• Reduced RFI and EMI VR = 200V
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count

Description/ Applications
These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited
for HF welding, power converters and other applications where switching losses are not significant portion of the total
losses.

Absolute Maximum Ratings


Parameters Max Units
VR Cathode to Anode Voltage 200 V
IF(AV) Continuous Forward Current, TC = 127°C 60 A
IFSM Single Pulse Forward Current, TC = 25°C 800
IFRM Maximum Repetitive Forward Current 120
TJ, TSTG Operating Junction and Storage Temperatures - 55 to 175 °C
Square Wave, 20kHz

Case Styles

60EPU02PbF 60APU02PbF

BASE
BASE COMMON
COMMON CATHODE
CATHODE 2
2

1 3
ANODE ANODE
CATHODE ANODE
1 3

TO-247AC (Modified) TO-247AC

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60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)


Parameters Min Typ Max Units Test Conditions
VBR, Vr Breakdown Voltage, 200 - - V IR = 100µA
Blocking Voltage
VF Forward Voltage - 0.98 1.08 V IF = 60A
- 0.81 0.88 V IF = 60A, TJ = 175°C
IR Reverse Leakage Current - - 50 µA VR = V R Rated

- - 2 mA TJ = 150°C, VR = V R Rated

CT Junction Capacitance - 87 - pF VR = 200V

LS Series Inductance - 8.0 - nH Measured lead to lead 5mm from package body

Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)


Parameters Min Typ Max Units Test Conditions
t rr Reverse Recovery Time - - 35 ns IF = 1.0A, diF/dt = 200A/µs, VR = 30V

- 28 - TJ = 25°C IF = 60A
VR = 160V
- 50 - TJ = 125°C
diF /dt = 200A/µs
IRRM Peak Recovery Current - 4 - A TJ = 25°C

- 8 - TJ = 125°C

Qrr Reverse Recovery Charge - 59 - nC TJ = 25°C


- 220 - TJ = 125°C

Thermal - Mechanical Characteristics


Parameters Min Typ Max Units
RthJC Thermal Resistance, Junction to Case 0.70 K/W
RthCS Thermal Resistance, Case to Heatsink 0.2
Wt Weight 5.5 g
0.2 (oz)

T Mounting Torque 1.2 N*m

Marking Device 60EPU02, 60APU02

Mounting Surface, Flat, Smooth and Greased

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60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05

1000 1000
T J = 175˚C

100

Reverse Current - I R (µA)


125˚C
10

1
25˚C

0.1
Instantaneous Forward Current - I F (A)

100
0.01

T = 175˚C 0.001
J
0 50 100 150 200
T = 125˚C Reverse Voltage - VR (V)
J
Fig. 2 - Typical Values Of Reverse Current
T = 25˚C
J Vs. Reverse Voltage
10000
Junction Capacitance - C T (pF)

10
T J = 25˚C
1000

100

1 10
0 0.5 1 1.5 2 2.5 1 10 100 1000
Forward Voltage Drop - VFM (V) Reverse Voltage - VR (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
1
(°C/W)

D = 0.50
D = 0.20
thJC

D = 0.10
Thermal Impedance Z

D = 0.05 PDM
D = 0.02
0.1
D = 0.01 t1
t2
Notes:
Single Pulse
(Thermal Resistance) 1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics

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60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05

180 100
Allowable Case Temperature (°C)

170

Average Power Loss ( Watts )


RMS Limit
80
160

150
60 D = 0.01
140 DC D = 0.02
D = 0.05
130 40
D = 0.10
Square wave (D = 0.50) D = 0.20
120 80% Rated Vr applied
D = 0.50
20
110 DC
see note (3)
100 0
0 20 40 60 80 100 0 20 40 60 80 100
Average Forward Current - IF(AV) (A) Average Forward Current - IF(AV) (A)

Fig. 5 - Max. Allowable Case Temperature Fig. 6 - Forward Power Loss Characteristics
Vs. Average Forward Current

70 800

IF = 90A 700 Vr = 160V


IF = 60A Tj = 125˚C
60
Tj = 25˚C
IF = 30A
600
50 IF = 90A
500 IF = 60A
IF = 30A
Qrr ( nC )
trr ( ns )

40 400

300
30
200
20 Vr = 160V
Tj = 125˚C 100
Tj = 25˚C

10 0
100 1000 100 1000
di F /dt (A/µs ) di F /dt (A/µs )

Fig. 7 - Typical Reverse Recovery time vs. di F /dt Fig. 8 - Typical Stored Charge vs. di F /dt

(3) Formula used: TC = T J - (Pd + PdREV) x R thJC ;


Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = V R1 x IR (1 - D); IR @ VR1 = 80% rated V R

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60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05

Reverse Recovery Circuit

VR = 200V

0.01 Ω
L = 70µH
D.U.T.

D
di F /dt
dif/dt
ADJUST G IRFP250

Fig. 9- Reverse Recovery Parameter Test Circuit

trr
IF
ta tb
0
4
Qrr
2
I RRM 0.5 I RRM
5
di(rec)M/dt

0.75 I RRM
1
di /dt
di fF/dt

1. diF/dt - Rate of change of current through zero 4. Qrr - Area under curve defined by t rr
crossing and IRRM
t rr x I RRM
2. IRRM - Peak reverse recovery current Q rr =
2
3. trr - Reverse recovery time measured from zero 5. di (rec) M / dt - Peak rate of change of
crossing point of negative going IF to point where current during t b portion of t rr
a line passing through 0.75 IRRM and 0.50 I RRM
extrapolated to zero current

Fig. 10 - Reverse Recovery Waveform and Definitions

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60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05

Outline Table
60EPU02PbF
3. 65 (0.14 4)
15.90 (0.626) DIA. 5. 30 (0 .20 9)
3. 55 (0.13 9)
4.70 ( 0.185)
15.30 (0.602) 2.5 ( 0.098)
1.5 ( 0.059)
5. 70 (0 .22 5)
BASE
5.30 ( 0.208) COMMON
CATHODE
20.30 (0 .800 ) 2
19.70 (0 .775 ) 5.50 ( 0.217)
4. 50 (0.17 7)
1 3 (2 PLCS.)
1 3

CATHODE ANODE
14. 80 ( 0.583)
14 .20 (0 .559 ) 4. 30 (0 .170)
3. 70 (0 .145)

2. 20 (0 .08 7) 2. 40 (0.09 5)
1. 40 ( 0 .05 6)
M AX. M AX .
1. 00 (0 .039)
0.80 ( 0.032)
0. 40 (0 .213)
10. 94 ( 0.430)
10 .86 (0 .427 )
Dimensions in millimeters and inches
60APU02PbF

3. 65 (0 .14 4)
BASE
15 .90 (0 .626 ) DIA. 5. 30 (0 .20 9)
COMMON 3. 55 (0 .13 9) 4.70 ( 0.185)
CATHODE
2 15 .30 (0 .602 ) 2.5 ( 0.098)
1.5 ( 0.059)
5. 70 (0 .22 5)
5.30 ( 0.208)
20 .30 (0 .800 )
ANODE ANODE 19 .70 (0 .775 ) 5.50 ( 0.217)
1 3
4. 50 (0 .17 7)
1 2 3 (2 PLCS.)

14. 80 ( 0.583)
14 .20 (0 .559 ) 4. 30 (0 .17 0)
3. 70 (0 .14 5)

2. 20 (0 .08 7) 2. 40 (0 .09 5)
1. 40 (0 .05 6) M AX . M AX .
1. 00 (0 .03 9) 0.80 ( 0.032)
0. 40 (0 .21 3)
10. 94 ( 0.430)
10 .86 (0 .427 )

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60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05

Marking Information

PART NUMBER
INTERNATIONAL
RECTIFIER 60EPU02
EXAMPLE: THIS IS A 60EPU02
WITH ASSEMBLY LOGO P035H
LOT CODE 5657 56 57 DATE CODE
ASSEMBLED ON WW 35, 2000 ASSEMBLY P = LEAD-FREE
IN ASSEMBLY LINE "H" LOT CODE YEAR 0 = 2000
WEEK 35
LINE H

PART NUMBER
INTERNATIONAL
EXAMPLE: THIS IS A 60APU02 RECTIFIER 60APU02
WITH ASSEMBLY LOGO P035H
LOT CODE 5657 56 57 DATE CODE
ASSEMBLED ON WW 35, 2000 ASSEMBLY P = LEAD-FREE
IN ASSEMBLY LINE "H" LOT CODE YEAR 0 = 2000
WEEK 35
LINE H

Ordering Information Table


Device Code
60 E P U 02 PbF

1 2 3 4 5 6

1 - Current Rating (60 = 60A)


2 - Circuit Configuration:
E = Single Diode
A = Single Diode, 3 pins
3 - Package:
P = TO-247AC (Modified)
4 - Type of Silicon:
U = UltraFast Recovery
5 - Voltage Rating (02 = 200V)
6 - none = Standard Production
PbF = Lead-Free

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60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05

Data and specifications subject to change without notice.


This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 08/05

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