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Abstract: Methods for SEM based automatic image analysis of cemented carbide
microstructure were developed. Two different categories of hard metal were
investigated: WC-Co grades and WC ~ C o grades, i.e. cemented carbides
containing cubic carbides (7-phase) as well as tungsten carbide WC. The materials
represented a wide range in grain size, chemical composition and structure
complexity.
Automatic object detection and evaluation of carbide grain size, carbide contiguity
and volume fractions were possible through the combination of optimized
specimen preparation, high resolution microscopy and image processing in a
software oriented image analyzer. The importance of careful specimen preparation
in order to obtain maximum contrast and structure definition was emphasized.
High spatial resolution in SEM was achieved by working at low accelerating
voltages. Two different back scattered electron contrast modes were utilized:
atomic number (Z) contrast and channelling contrast.
Mean values of WC and cubic carbide (y-phase) grain size in the range 0.6-2/~m
were measured; values which were considerably lower than values obtained
according to conventional methods. The difference was explained by the low
detection limit in the SEM based analysis, enabling detection of fine carbide grain
populations. Binder mean free path increased and carbide contiguity decreased
with increasing binder volume and with increasing carbide grain size in the
WC-Co alloys.
The results of the automatic measurements were of fully sufficient accuracy for a
wide range of hard metals. In cases of very weak contrast, limited manual editing
was sufficient to obtain results close to actual values. It was concluded that
automatic methods can be successfully applied to the characterization of complex
cemented carbide microstructures.
possibility of chemical characterization through the SEM instruments equipped with efficient BSE
detection of emitted characteristic X-rays. In ad- detectors.
dition, the photo-emission electron microscope Due to the rapid developments in semiconductor
(PhEEM) should be mentioned. PhEEM gives high technology, the performance of modern software
material contrast and a true surface image of the oriented image analyzers has increased tremen-
specimen due to negligible penetration of the ultra- dously during the last decade. 1°'11 However,
violet light emitting electrons from the specimen although very advanced image analysis systems
surface. 7'8 PhEEM is, however, not a routine have been available for several years the semi-
technique to the same extent as SEM. automatic procedures still play an important role in
Image formation in SEM is possible utilizing structure analysis of cemented carbide. The main
different modes of electron detection. Most suitable reasons are the very high demands on image
for quantitative geometrical characterization of contrast and structure definition in order to permit
planar cross sections are the back scattered electrons a fully automatic and reliable object detection of,
(BSEs). These are high energetic electrons leaving e.g. grain boundaries, and thereby take full ad-
the specimen surface with energies relatively close vantage of the advanced analyzers with their high
to the incident electron energy. The BSE intensity is speed of analysis and possibilities to accumulate
characterized by a strong material or atomic large data volumes and thus improving the stat-
number contrast. BSE contrast is discussed further istical quality of the results. The developments in
in the present work. The incident electrons in SEM the more hardware oriented fields of microscopy
penetrate into the specimen surface and the image is and specimen preparation have not been quite that
thereby representative for a surface volume rather dramatic as for the image analyzers.
than being a true surface image. The electron However, both high performance microscopy
penetration depends on the energy of the incoming and careful specimen preparation are of vital
electrons and on the specimen properties. The importance in the quantitative metallography of
limitations in lateral and depth resolution of BSE in hard metals.
SEM when working at high accelerating voltages The aim of the present research was to investigate
(20-35 kV) have been pointed out. r However, the the possibilities to apply modern SEM based
electron penetration can be decreased to very low automatic image analysis to the microstructural
values by working at low accelerating voltages. The characterization of cemented carbides. The ap-
lateral resolution in BSE mode when imaging proach has been a combination of
tungsten carbides (WC) at 6 kV accelerating voltage
can be estimated to better than 0-05/zm, 9 a value --optimized specimen preparation techniques in
considerably lower than the carbide grain size in order to maximize image contrast and structure
most commercial cemented carbide grades. Hence, definition;
suitable SEM conditions for stereologcial analysis --high resolution SEM utilizing low accelerating
of hard metal are BSE detection and low acceler- voltage and high efficient BSE detection; and
ating voltage. It should be emphasized that these - - a combination of favourable BSE contrast
demands are generally only fulfilled in modern modes and image processing in the image
WC-Co grades
31C 69 -- -- 31 3
18C 82 -- -- 18 3"5
18F 82 -- -- 18 1"9
10F1 90 -- -- 10 2"4
10F2 90 -- -- 10 2
W C 7-Co grades
7C 49'5 27'5 11 12 2-3
7F 57 11 17"5 14.5 1-2
Microstructural characterization of cemented carbides 63
2 CEMENTED CARBIDES
~
Etched •
parameter evaluation of the main part of the qmin boundary I I Unetd)ed Co Polishedsurface
X . . . . . . . . . . . . . . . . .
microstructure. The resolution limit due to the finite Efched groin surface
depth of electron penetration can be decreased to
low values by working at a low accelerating voltage. BSE
intensif,
Especially, the detection of high energetic, back
scattered electrons offers useful possibilities. Con- vhife WC
trast in BSE mode is due to different mechanisms.
c ~ phase ~ ~ " y
Two different mechanisms were utilized in the
present work, atomic number (Z) contrast and
channelling contrast. Co boundaries Co
Fig. 3. Schematic view of atomic number (Z) contrast in an
etched WC 7~Co grade.
Microstructural characterization of cemented carbides 65
Accelerating voltage
Line scan
) ~tched specimens for grain size 6kVand 12kV
measurements
Incident
e{ecfpons
II ,
I
I t Bocksco.ffered --polished specimensfor volume 6 kV
fraction measurements
x
ti
] [
t / '""
[ I
y
Y_
....
4.,.~.Specimen
Beam current 2 nA
Electron detection BSE
Working distance 9 mm
Tilt angle 0°
Fig. 4. Schematic view of channelling contrast in a WC-Co level of the individual WC grains varies from dark
grade. to bright. Image contrast is a mixture of Z contrast
and channelling contrast. The change in image
18C 12kV IOF2 contrast with accelerating voltage can be taken
advantage of in image analysis for automatic
detection of the complete grain boundary network.
Grain boundaries which have not been etched and
thus appear without contrast at a high accelerating
voltage (12 kV) can often be identified in the 6 kV
image, due to differences in gray level between the
adjacent grains. Thus, by combining the two types
of images, a more complete network can be
detected. It should be emphasized that due to low
channelling contrast for the y-phase the detection of
boundaries between 7 grains is dependent on the
etching of the grain boundaries.
Finally, the surface conditions are of major
Fig. 5. Different contrast for low and high accelerating volt- importance for the channelling contrast. A dis-
age. High (12 kV) mainly Z contrast; low (6 kV)--mixture tortion of the grain surface, e.g. by careless specimen
of Z and channelling contrast. preparation, will completely mask the channelling
contrast. Thus, the preparation of a planar section
grain orientations. The phenomenon is schematic- without distortion in the outermost surface layer is
ally shown in Fig. 4. The BSE intensity is low for an irremissible demand for channelling contrast at
grains with high electron absorption and such low accelerating voltage in SEM.
grains appear dark on the micrograph. Thus, even The cemented carbide surfaces were examined in
though the mean atomic number is equal for all a SEM JEOL 6400. Electron optical and geo-
grains, contrast can be obtained between different metrical conditions are given in Table 2. An
grains. The channelling contrast depends on chemi- important feature of the SEM is a high performance
cal composition, SEM conditions and specimen BSE detector with high atomic number resolution.
surface conditions.
The channelling contrast increases with increas- 4 S P E C I M E N P R E P A R A T I O N FOR CARBIDE
ing atomic number and is relatively strong for WC GRAIN SIZE M E A S U R E M E N T S
but generally unsignificant for the 7-phase. Fur-
thermore, the channelling contrast increases with The mechanical polishing and subsequent etching
decreasing accelerating voltage in SEM. The de- of the carbide grains is probably the most important
8-2
66 Anders Nordgren
single step in the automatic measurement of carbide measurements should, if possible, be made on a
grain size in cemented carbide. There are three perfectly planar section through the material.
major and somewhat contradictory demands on the Increased surface topography due to prolonged
specimen surface. etching will not only result in errors in apparent
grain size but, in addition, the definition and
(1) A surface practically free from grinding and
contrast in the microstructure will be lost and it will
polishing marks and free from distortion due
not be possible to apply an automatic measuring
to deformation in the outermost layer of the
procedure.
grains during polishing.
Hence, the etching of the carbide phases will in
(2) Revealed grain boundary network, of special
practice be a compromise between, on one hand,
importance when detecting the 7-phase grain
the removal of a disturbed surface layer and the
boundaries.
preferential etching attack on the grain boundary
(3) Minimum in surface topography and de-
network and, on the other hand, the demand on
viation from a planar cross section.
insignificant surface topography.
Polishing marks appear as randomly orientated Methods used in the present work for polishing
straight lines across the field of view. Such lines will and etching of the carbide phases in the different
be detected in the automatic image analysis and grades are given in Tables 3-6. The conditions
linked into the grain boundary network, thus should be considered as guide values in further
creating artificial grains. However, even if the work, especially when etching WC-7-Co grades,
surface is free from such a line pattern from the where the chemical composition of the actual grade
mechanical polishing, there will still be a thin layer determines the etching response.
of disturbed material in the grain surface due to the The chemical etching (Murakami) of WC in the
action of the diamond abrasive in the polishing WC-Co grades can be replaced by electrolytic
cloth. Such a disturbed layer has to be removed in etching (Table 6). However, the Murakami reagent
order to obtain maximum contrast between dif- cannot be used for WC-y-Co alloys due to rapid
ferent carbide grains. This is achieved by a very attack on the y-phase. A constant current source
light etching of the carbides. (galvanostat) and a Pt cathode were used in the
Secondly, etching of the carbide phase is generally electrolytic etching. The current density should be
necessary in order to reveal the grain boundaries, kept very low in order to reduce the oxidation of the
which in most cases are attacked more rapidly than surface with accompanying loss in SEM resolution.
the grain surfaces. Hence, with increasing time of Etching of grade 7F was made as a two-step
etching, the amount of disturbed material in the electrolytic etching where the ),-phase was etched
grain surface decreases and the grain boundary before the WC (Table 6). If the WC is etched in step
attack increases. These desirable effects are counter- 1, before the 7-phase, the 7-phase will be passivated
acted by the increase in surface topography. The and not affected during etching in step 2. When the
Step 1: Grinding
Fine grinding with diamond grinding disc
Struers DP suspension.
Microstructural characterization of cemented carbides 67
Reagent Application
" Reagents according to Seco Tools AB and Sandvik Coromant AB, Sweden.
Etching
Grades reagent Etching procedure
Current
Etching density Time
Grade reagent (mA/cm 2) (s)
Reference
-- fine
Microsh~c ture ]
! I of wc-~-c0 I
.;:. ; .. (, ?.. Iwc-
:'.~-"./..::')~ i .4~-.-.:.'..v..~!:i
Basically a number of parameters are available as where S is the interface area per unit volume of the
measures of carbide grain size in planar sections different types.
through the material, e.g. grain area or the The contiguity is thus a measure of the degree of
corresponding equivalent circle diameter (Fig. 8). contact between the carbide grains. The contiguity
These parameters are object specific. In order to can be evaluated on planar, two-dimensional sec-
evaluate them, every single grain has to be detected tions 1 using the following relationship
and the complete grain boundary network has to be
outlined. This demand represents a considerable 2Nca~b/°arb (2)
challenge from a specimen preparation, electron CN = Ncarb/bind Aft 2Nearb/car b
Microstructural characterization o f cemented carbides 69
5.3 Contiguity by automatic methods The value of 2N,,.~,.b/c~,.b can be calculated from the
two measured quantities.
A two-step procedure was developed for evaluation
2N(~,b/c~, , = n , ~ , , - - n,,i,,~, (6)
of the contiguity C x using automatic systems where
the different types of phase boundaries are not Hence, the contiguity Cx can be determined by
directly marked by an operator. The procedure is insertion into eqn (2)
based on intercept length measurements of the
binder and the carbide phases. A similar procedure Cx- = 2N"a"b/"a"" -- nea"b- - rtmnd (7)
" N,,.~,.~,/~,,,d+ 2N,,,,.~,/,.a,.b n,,..m,
was used by Werlefors and Eskilsson?
n,,~rb and n,,i,,, ~ are evaluated as field specific mean
S t e p 1: Measurement of Ncarbide/bin(le r o n
polished, planar sections by detection of the values of several fields of view. The two-step
binder pools. measurement does not have to be made on the same
specimen area because n,:a,,b and n~>~nd are not related
//bind = Nearb/bin d (4) to specific carbide grains.
- - S t e p 2 . Measurement of (N,..~,.~,/~,,nd+ 2No=rb/e.,~b )
on etched sections by detection of the carbide
5.4 Binder width
grains
For low binder fractions it is possible to detect
n,.~,.,, = N~,.~,.b/i,md+ 2N~,v/,.a,, h (5) binder pools as individual objects on polished cross
sections and thus to evaluate object specific para-
where n(,a,.~,and n~,,,,d are the measured numbers of
meters, e.g. binder pool areas. However, at high
boundary intersections per unit length of ref-
binder fractions the binder appears as a more or less
erence line. The number of intersections is equal
to twice the number of intercept chords. continuous phase with few individual binder pools.
This was the case for grades 31C, 18C and 18F.
The two steps are schematically shown in Fig. 9. Hence, intercept chord lengths were determined for
70 Anders Nordgren
Table 7. Evaluated parameters Co areas in the field of view. The phase images
are stored in separate memories. Discrimi-
Parameters Symbols nation errors due to the finite resolution of the
Carbide grain size SEM and the TV scanner (halo effect) are
Frequency size distributions and mean eliminated by image processing.
values for the --Grain boundary detection. The grain boundary
----equivalent carbide diameter dwc, dy network is detected using a high pass gradient
d = (4/n. A)'~
where A is the apparent grain area filter, i.e. an enhancement routine sensitive to
----carbide intercept chord lengths lwc, ly changes in gray level. Such an operation is
Contiguity performed on both images and the result is
--according to Section 5.3 C~
--according to eqn (3) Cj combined by image addition. The gradient
Binder width filter registers differences in gray level between
Frequency size distributions and mean /co different grains (WC-WC in 6 kV image and
values (mean free path) for binder
intercept chord length
WC-7 in 12 kV image) and between the dark,
Volume fractions Vwc, V~, Vco etched grain boundary network and the back-
ground. Hence, in the combined image the
major part of the network will appear with
only small segments missing.
the binder throughout the measurements, for all
--Automatic linking. An automatic routine for
grades. The parameters evaluated in this work are
reconstruction of the network, based on the
given in Table 7.
dilation of free unconnected ends, operates on
the combined image, linking free ends together.
6 AUTOMATIC IMAGE ANALYSIS
--Manual editing. Defects in the network re-
maining after the automatic linking are manu-
An automatic image analysis system (IBAS 2,
ally corrected for. A cursor and a digitizer
Kontron GmbH) was utilized in the measurements.
tablet are used for the tracking of grain
The system is software oriented with extensive
boundaries.
possibilities for different types of image processing
--Grain type separation. The gradient filter does
on digital image information and offers a large set
not distinguish between different types of phase
of different parameters. SEM micrographs were fed
boundaries or grains. Therefore, WC and y
into the image analyzer via a TV scanner. In such a
grains are separated from the total grain
set-up, contrast is reduced and the noise level of the
population using image subtraction where the
image increases during image transfer, from the
phase images are used as masks.
scanned surface in SEM via photographic material
--Parameter evaluation. Object specific data for
and TV scanner, to the digital storage in image
the individual grain surfaces and intercept
memory. The ideal link is an SEM directly interfaced
distributions are evaluated for all carbides
to the image analyzer so that the detector signal can
(WC+7) as well as for the separate carbide
be directly stored in digital image memories, or by
types.
a equivalent set up where digital image data are
transferred without conversions to analog signals.
7 WC-Co GRADES
Hence, possibilities exist for further improvements
of image quality and results of measurements as
7.1 Carbide grain size distributions
compared to the results in the present work.
The major steps in the image analysis sequence
Measured frequency size distributions for WC in
for carbide grain size measurement of a WC-7-Co
the investigated WC-Co alloys are shown in Fig.
alloy are shown in Fig. 10a.
11. Equivalent circle diameter (dwc) and intercept
--Image input. In the first step both images are chord length (/we) are used as a measure of carbide
stored in the digital image memory; the 6 kV grain size. Carbide frequencies are normalized with
image with a significant contribution of chan- respect to the total number of detected carbide
nelling contrast in the WC phase, and the grains or chords. Mean values dwc and lwc are given
12 kV image mainly carrying Z-contrast. in Table 8.
--Phase images. Gray level discrimination in the The mean carbide size is largest for grade 18C
12 kV image is used to separate the WC, 7 and where dwc = 1-90 Ftm compared to 1.34/tm for the
Microstructural characterization of cemented carbides 71
Im~age i Image 2 ]
]12 kV BSE 6 kV BSE |
~Zcontrast Channelling+|
Z contrast |
1 Image I WC T phase
-~I addition I ' boundaries
WC c~ralns T phasegrains
Fig. 10. (a) Flow diagram of grain size measurement in WC-?-Co grades using automatic image analysis; (b) Binary images during
image analysis of a WC 7-Co grade.
second coarse grained material 31C. The size tributions are investigated, the equivalent diameter
distribution for these two grades are relatively is probably a more sensitive measure of carbide
broad, especially for 18C. Distributions and dwc grain size.
values for the three fine grained alloys are rather The high fraction of short chords < 0.5/~m is due
similar, grade 18F (1.09~m) and 10F1 (1"13/lm) to the random sectioning of the detected carbide
being somewhat coarser than grade 10F2 (0.95 ~m). surfaces by the reference line grid. The carbide
The results of the measurements correspond fully grains are only occasionally intersected by the
to the visual impression of the microstructures reference lines at positions corresponding to maxi-
in Figs 1 and 11. When comparing the mean mum possible chord length. Instead a large number
values of carbide chord length lwc, the different of shorter chords are generated and the mean chord
grades are not as well separated from each other as length lwc therefore becomes lower than the mean
for dwc. Hence, if small differences in size dis- equivalent diameter (Table 8). Chord length data
72 Anders Nordgren
10
EQUIVALENTOlAM.d~c(pm) INTERCEPTLF-Nb"IHIv,,clpm)
~ F 22~ chords
Ir~ =1.~~ I
+t , +<'==[ 3° I ,I. I
I 2 3 ~, 5
t~ll.,m)
i
+ FI '°++°'
,,0,..1[
1 2 3 ~. 5
d,,t::(Nm) lwclPm)
';4) I
~ot- J-] 3~ gm,ns ~].~ I]we =O~pm
2o i
EQUIVALENT DIAM c~Im.~) INTERCEPT LENGTH L,~llJml
Fig. 11. Frequency grain size distributions for WC in the WC~::o grades.
nominal values are based on detection of relatively Table 9. Mean free path leo of the Co binder in the WC Co
coarse carbides, while the values from the SEM alloys
based analysis in the present work also includes
1('o
very small carbides. However, although the differ- Grade (/am)
ence in mean carbide size is considerable between
nominal and measured values, the ranking of the 31C 0-99
materials is the same, the only divergence being that 18C 0"68
18F 0"43
grade 10F2 is even more fine grained than expected 10FI 0"27
from the nominal values. 10F2 0"27
The dimensions of the binder pools were measured A 1.0 Coarse /= 31C
5 g i.,d we-co / --
using linear intercept chord lengths. Distributions
and mean chord length data for the W C - C o alloys ,2 /
are shown in Fig. 13 and Table 9. As can be =. /
/ Fine grolnecl
~0b 13zocho~l z 05 / / WC-Co
d~- 30~ ' tc==0'99proI ~SF
z //.., 10F_2,I0F.__!
= I
1
,
z
INTERCEPTLEN611t[eolp~)
i •i8 • /I"
/
I I I
10 20 30
BINDER VOLUME FRACTION Vco(%)
Fig. 14. Binder mean free path as a function of binder fraction
lO and W C grain size.
tco(Pml expected the mean free path lwc through the binder
II.~,~ chon:ls decreases with decreasing binder fraction. The
~F *
influence of WC grain size on lco is shown by
oF'LI comparing the coarse grained 18C with the fine
grained 18F. The /co value for 18F is only
lO
approximately 60 % of the value for 18C (Fig. 14).
tcolpm)
The fine carbide population in 18F can be imagined
{%) 10F1 as occupying the large binder pools between coarse
.,- 50J-I 1.204.chords WC grains and thus decreasing the free path
through the binder. The values in Fig. 14 show
~2ol-
,oil
I
good agreement with data of Roebuck and Bennet 5
and of Sigl and Fischmeister. 6
L
7.3 Volume fractions
INTERCEPT LENGTH [co(pro)
(%
The volume fraction of Co was measured on
50 1~ chords
Ico:O.27pm polished sections imaged in SEM at a low acceler-
t,.O
ating voltage (6 kV). The result is shown in Table 10
where the measured values are compared with the
1o
nominal binder content. The agreement is fully
1 /- acceptable over the whole range of Co contents.
tCo(Pm) Due to the high contrast between WC and Co in
Fig. 13. Binder intercept chord length distributions for the SEM, the detection of the phase boundaries can be
W C - C o grades. made with high accuracy. The introduction of an
74 Anders Nordgren
Table 10. Volume fractions of binder phase in the W C - C o Table 12. Contiguity C~ for the WC-Co alloys based on
alloys (measured values according to image analysis compared measured values of mean carbide size, binder mean free path
with nominal values) and volume fraction
additional carbide phase, as in the WC-7-Co higher. The fine WC grain populations can be
grades, increases the demands on noise free, high imagined as acting as a filler in the binder and thus
quality imaging of the specimen surface. connecting larger WC grains and increasing the
contiguity. The results indicate that the fine WC
7.4 Carbide contiguity carbide populations are of importance in obtaining
a high contiguity.
The contiguity of the carbide skeleton was de- In the correlation diagram in Fig. 15, it is shown
termined according to the procedures discussed in that the C~ values are 5-10% higher than the C N
Section 5, i.e. in the first case based on the values. However, the ranking of the WC-Co grades
measurement of the frequency of different types of is the same and both procedures can be considered
phase boundaries (Nwc/co, Nwc/we) and in the as giving an equivalent result.
second case utilizing the measured mean chord In Fig. 16 measured C~ values for the WC-Co
lengths/co and/we and the volume fractions Vco and grades are compared with data of Roebuck and
Vwc Bennet 5 and of Exner. 1~ Roebuck and Bennet
studied a range of WC-Co alloys using SEM,
2Nwc/wc (2) Murakami etched specimens and semi-automatic
C~ = Nwc/co + 2Nwc/w c image analysis. Their materials, B, D and Q, are
compared with 10F1, 18F and 31C in Table 13. The
c, iwc l/co
= ] (3) measured contiguity shows good agreement for
comparable binder widths and carbide grain sizes.
The results of the calculations are given in Tables The expected higher contiguity in Q compared to
11 and 12. The contiguity C N varies from approxi- 31C due to the lower binder content is counteracted
mately 0.45 in coarse grained, high Co alloys to 0.59 by the coarser carbides in Q.
in grade 10F2. Comparison of C s for grade 18C
and 18F indicates that the contiguity increases with
decreasing carbide grain size. Furthermore, the
coarse grained alloy 18C has approximately the
same contiguity as for grade 30C, even though the
binder fraction in the latter case is considerably
lOFle/
,dl, os 31C 9 , ~
Table 11. Contiguity C N for the W C - C o alloys based on the
- /
I
Nwc/co +
2Nwc/wc Nwc/co 2Nwc/wc
Grade (urn-l) (ltm-1) (,am -1) CN
I I
31C 1"113 0'613 0-500 0'45 0.5 1.0
18C 0'910 0-514 0"396 0.44 C = 2 Nwctwc
18F 1-576 0"767 0"809 0"51 N 2 Nwetwc + Nwc/co
10F1 1-698 0'782 0"916 0-54
10F2 1"856 0'759 1"097 0-59 Fig. 15. Comparison of carbide contiguity C N and C~ accord-
ing to eqns (2) and (3), respectively.
Microstructural characterization o f c e m e n t e d carbides 75
(a)
1.0 V/C-Co: Exner ref (12)
' B, O,g :Roebuck and Benneff ref ( 5 )
• Aufomatic
O Limif~l ~ifing
x Full corl~ction
0.8 1o0
~ 20
>..-
0.6 10F.~.22~
EQUIVALENTDIAH.d~c(pm)
Z
10F1 (%1
E 50
,31C Limited 126 ~r~ins ~6 30
y dLf!n3.
I- m \ o(2
,¢ z
~.d
lO
0.2 WC- Co
IO
c~(~m)
(%
I I I I
0 10 20 30 .----~'---]12~, grains
BINDER VOLUME FRACTION Vco (%) 30
c~
Table 16. Principal differences between two different methods of WC-Co cemented carbide structure characterization
SEM LOM
It can be concluded that the limited manual Mean values for carbide size (/we), binder mean free
editing, which concentrates on eliminating large, path (/co), volume fractions (V~o, Vwc) and con-
artificial grain areas, results in size distributions and tiguity (C~.) were determined for grades 31C, 18C
contiguity data very close to correct values for all and 10F2, representing a wide range of Co contents
W C - C o grades. For coarse grained alloys, the and carbide grain sizes.
results of the automatic analysis, without any The results of the method comparison are shown
manual interaction, are fully sufficient. Based on in Figs 19-22. Very good agreement was obtained
these results the W C - 7 - C o alloys were analysed for the binder volume fraction Vco (Fig. 19). The
using limited editing of the grain boundary net- deviations from the nominal values are well within
works. standards for both methods. However, when data
for ]co and ]we are compared (Figs 20 and 21) it is
7.6 Comparison with conventional methods apparent that the difference in resolution and
available contrast lead to different results.
The results from the automatic analysis of W C - C o The mean values leo and lwc according to the
grades 31C, 18C and 10F2 were compared with LOM based analysis are generally higher than for
conventional LOM based semi-automatic structure the SEM based analysis. This is due to the higher
analysis. Table 16 shows the principal differences resolution and the lower detection limit in SEM,
between the methods. The most important factor is and thus the possibility to include smaller objects in
the difference in contrast and resolution of the the analysis. As a consequence the differences
image forming system. The semi-automatic analysis increase when the carbide grain size and the binder
was based on magnified light optical micrographs
(LOMs) of etched specimens. Apart from lower
lateral resolution of LOM compared to SEM the
mechanisms of contrast are completely different.
The high atomic number contrast between binder
and carbide phase and the channelling contrast
3O
between carbide grains with different crystal orien-
tation have no correspondence in LOM. Thus, the
ability to detect very thin binder ligaments and
small carbide grains can be expected to be con-
siderably lower in LOM as compared to SEM.
However, the high magnification used in SEM in
-
20
I /
U
18_c
1.5
1.0
o=
0.8
S
LOM bosed
ua. N 0.6 10F2 Qnolvsls
z
=R
~ OS 8 •- I 4 31C
zo 06
SEMbosed
r~
0.2
WC-Co (12)
I I I
05 1.0 1.S
BINDER MEAN FREE PATH Tco (pm)
(SEM bosed automotic imoge on(~[ysis)
1 I I
Fig. 20. Binder mean free path/co according to conventional lO zo 30
method (LOM) and SEM based automatic measurement. BINDER VOLUME FRACTION Vco ( % )
Fig. 22. Carbide contiguity CN according to the conventional
method (LOM) and SEM based automatic measurement.
2.0
8 W C - 7 - C o GRADES
,
1.0 15 2.0
MEAN CARBfDE LNTERCEPT LENGTH ~wc 8.1 Carbide grain size distributions
(SEM bosed outomotic im~je anatysis)
Fig. 21. Mean carbide grain size/we according to the conven- Carbide grain size distributions for WC, 7-phase
tional method (LOM) and SEM based automatic measure-
ment. and WC + 7 (all grains) are shown in Figs 23 and 24
for the coarse grained ?C and the fine grained 7F,
respectively. The difference in carbide coarseness of
volume decrease (grade 10F2). Due to the poor the two grades is reflected in both carbide types.
resolution the LOM based analysis is not able to The 7-phase is coarser than WC for both grades.
correctly represent the differences in structural When all grains are considered, the mean carbide
parameters between grades 31C, 18C and 10F2. size (dAis) for 7C is approximately twice the value for
The measured contiguity depends on both the 7F (Table 17).
ability to detect thin binder areas and to observe
small carbide grains. The C N values according to 8.2 Volume fractions
the LOM based analysis are higher than the values
evaluated from the SEM micrographs (Fig. 22) Due to the high solubility of WC into the 7-phase,
probably due to an underestimation of the number the nominal values cannot be directly compared
of W C / C o interfaces, i.e. the thin binder ligaments with values for sintered material. However, Chat-
between the carbide grains were not properly field 13 calculated the volume fractions of WC, 7 and
detected. However, the overall relationship and the Co in cemented carbide with the same nominal
Microstructural characterization of cemented carbides 79
20
3c
'°t Grade Phase
Nominal
(v/o)
Calculated
(v/o)
Measured
(v/o)
lO
yC WC 49"5 32 36"4 4- 3
2 3 4 5 TiC
EO,UIVALENTDIAM.dwc(Pm) d~(IJm) 27'5~
5j 38"5 56 51"64-3
(%),
50' (YaNb)C 11 J
WC~-~+~ Co 12 12 11.64- 1
z,0 ,~ 301 grains
dAIL= .371urn 7F WC 57 52 49.3 4- 3
30 TiC 11 ]
k
20 28.5 34 37 4- 3
(TaNb)C 17"5 J
I0
Co 14'5 15 12"94- 1
dA, (pro)
Fig. 23. Frequency grain size distributions for WC, y-phase
and WC + y in grade yC.
8.3 Carbide contiguity
compositions as 7C and 7F based on experimentally Table 20. Contiguity C t for grade 7C and yF based on measured
determined phase diagram data. These values are mean values of carbide size, binder free path and volume
fraction
used in Table 18 as an estimate of the volume
fractions that can be expected in the present /earh /¢:o
materials. The agreement between calculated and Grade (j~m) (/2m) V..... ~/i'o CI
measured volume fractions in this work is fully
7C 1.147 0.456 0-884 0.116 0.67
acceptable. A substantial part of the WC in grade yF 0-548 0-278 0-871 0'129 0'71
7C is thus dissolved in the cubic 7-phase.
ERM 10
80 Anders Nordgren
(%: (%
5O
and detection of back scattered electrons;
Automotic WC~ 50 ~m_a_tic WC*~-$ - - a combination of atomic number and
z ~o . . . . . . 252 groins 1'32 Qroins
¢3 aA.=t~3 um ~,0 dAu=6.70 pm channelling contrast modes in image analy-
30 30
sis and automatic image processing in-
2O
cluding gradient filtering and grain bound-
g m 10
. ary reconstruction.
EQUIVALENT DIAM. dAu(IJm)
(%), . ( O / o ~
dau(pm) (3) The preparation of the specimen surface is of
vital importance in order to automatically
:t +5
I 301 groins t.0}- , I 193 groins detect the grain boundary network. Imper-
fections in specimen preparation can rarely
2O be compensated for in SEM or by image
'°f
10
2 3 ~
10 enhancement during image analysis. The
etching procedures for W C - 7 - C o grades have
to be adapted to the individual grade due to
dAu[pm) dA.(Om)
the strong influence of carbide chemistry and
Fig. 25. Influence of manual editing of the grain boundary
network on the measured grain size distributions (WC + 7) in surface condition on the etching response.
grades 7C and 7F. (4) The automatic measurements of carbide grain
size and contiguity are of fully sufficient
Table21. Contiguity CNbased on uncorrected grain boundary accuracy for a wide range of hard metals. In
network and network after limited manual editing cases where the contrast of the grain bound-
aries is very weak, a limited manual editing
Grade C~ (uncorrected) C N (corrected)
is sufficient to obtain results close to actual
7C 0'60 0"61 values. Automatic detection is easiest for
7F 0"66 0'70 carbide phases with a constant gray level in
SEM. If the carbide phase has a pronounced
multi-phase structure, artefacts inside the
boundary network subjected to a limited manual grains are detected and linked into the grain
editing (see Section 7.5). The influence of the boundary network thus creating artificial
manual editing on the whole carbide population is grains.
shown in Fig. 25. Data for the uncorrected network, (5) An accurate microstructural characterization
after automatic reconstruction, are compared with is the basis for the understanding of the
data for the corrected network. The difference relationships between mechanical properties
between distributions and mean values are neg- and cemented carbide microstructure. The
ligible for both grades. F r o m this follows that the methods developed provide a necessary met-
calculated contiguity based on the two networks allographic tool. Basic principles of specimen
becomes practically equal (Table 21). preparation, microscopy and image analysis
are of general validity and should be ap-
9 CONCLUSIONS plicable to other types of materials.
9-2