Indian Institute of Information Technology Vadodara ,

International Campus Diu

Practical Work Book

Name: Ankit Gautam

Roll Number: 202211003
Branch: Computer Science and Engineering
Batch: 2022
Subject: EC 160
Session: 2022-23
 Certificate

This is to certify that Mr. Ankit Gutam of B.Tech of semester I

Enrollment Number 202211003, Branch Computer Science and
Engineering (CSE) has been found satisfactory in the continuous internal
evaluation of laboratory, practical and term work in the subject ECE160
for the academic year 2022-23.

Date: 10th January 2023

 List of Experiment
Sno. Experiment Date of Date of
Name Experiment submission
01 To verify input 10th January 2023
and output
characteristics of
Common-Emitter
Transistor(BJT)
Aims
To study input and output characteristics of n-p-n Bipolar Junction
Transistor (BJT) in Common-emitter configuration.
Components Required-
• Voltmeters
• Ammeters
• Resisters of different value of resistance
• Connecting wire
• Transistor
• Breadboard
• Voltage supply
Theory-
The transistor is a two junction, three terminal semiconductor device
which has three regions namely the emitter region, the base region, and
the collector region. There are two types of transistors. An n-p-n transistor
has an n type emitter, a p type base and an n type collector while a p-n-p
transistor has a p type emitter, an n type base and a p type collector. The

emitter is heavily doped, base region is thin and lightly doped and
collector is moderately doped and is the largest. The current conduction
in transistors takes place due to both charge carriers- that is electrons and
holes and hence they are named Bipolar Junction Transistors (BJT).
BJTs are extensively used in all types of electronic circuits.
Two of the most important applications for the transistor are-
(1) As an amplifier in analog electronic systems, and
(2)As a switch in digital systems. Basic Concepts of the operation of the
BJT is based on the principles of the p-n junction. In the n-p-n BJT,
electrons are injected from the forward-biased emitter into the thin base
region where, as minority carriers, they diffuse toward the reverse-biased
collector. Some of these electrons recombine with holes in the base
region, thus producing a small base current, IB. The remaining electrons
reach the collector where they provide the main source of carriers for the
collector current, IC. Thus, if there are no electrons injected from the
emitter, there will be (almost) no collector current and, therefore, the
emitter current controls the collector current. Combining currents, the
total emitter current is given as IE = IB + IC. For normal p-n-p operation,
the polarity of both voltage sources must be reversed.
BJTs are used to amplify current, using a small base current to control a
large current between the collector and the emitter. This amplification is
so important that one of the most noted parameters of gain, β (or h FE),
which is the ratio of collector current to base current. When the BJT is
used with the base and emitter terminals as the input and the collector and
emitter terminals as the output, the current gain as well as the voltage gain
is large. It is for this reason that this common-emitter (CE) configuration
is the most useful connection for the BJT in electronic systems.
The most important characteristics of transistor in any configuration are
input and output characteristics.
A. Input Characteristics: ‐ It is the curve between input current IB and
input voltage VBE constant collector emitter voltage VCE. The input
characteristic resembles a forward biased diode curve. After cut in voltage
the IB increases rapidly with small increase in VBE. It means that dynamic
input resistance is small in CE configuration. It is the ratio of change in
VBE to the resulting change in base current at constant collector emitter
voltage. It is given by ΔVBE / ΔIB.
B. Output Characteristics: ‐ This characteristic shows relation
between collector current IC and collector voltage for various values of
base current. The change in collector emitter voltage causes small change
in the collector current for the constant base current, which defines the
dynamic resistance and is given as ΔVCE / ΔIC at constant IB. The output
characteristic of common emitter configuration consists of three regions:
Active, Saturation and Cut‐off.

Observation-
Input characteristics when, VCE = 0
Supply Voltage in v Input Voltage(VB) in v Current(IB) in mA
0.1 0.006 0.00
0.9 0.563 0.01
1.1 0.581 0.03
1.2 0.590 0.04
1.4 0.598 0.06
1.5 0.602 0.07
1.6 0.606 0.08
1.7 0.611 0.10
1.9 0.616 0.11
2.0 0.620 0.13
2.1 0.623 0.14
4.1 0.654 0.33
4.8 0.661 0.41
5.8 0.669 0.50
7.3 0.679 0.66
9.3 0.688 0.87
10.6 0.694 1.00
14.1 0.904 1.38
 Current(IB) in mA
1.6

1.4

1.2

0.8

0.6

0.4

0.2

0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Conclusion-
• Studied about the input-output characteristics of n-p-n transistor
namely BC-517, particularly used in common emitter connections.
• Analyzed the input voltage and input current, by supplying the
voltage and made the graph from the same.