Flowable Gap Fill (Eterna) chamber

side-to-side matching solution

Soonam Park, Toan Tran

Member of Technical Staff, DSM Gapfill
SSG, Applied Materials

ET Conference
June 20 – 23, 2011

Applied Materials Confidential

Outline
 Flowable CVD background
 Flowable chamber overview
 Problem statement
 Side-to-side matching solutions
 Individual gasline and TSA delivery system
 Side matching solutions
 Summary / conclusion
 Acknowledgment

2 Applied Materials Confidential

 Flowable CVD background
 Deposit flowable film by chemical reaction of TSA (TriSilylAmine,
Si3H9N) and NH3 radicals dissociated in a plasma source
 Ex-situ cure is used for film conversion from Si-N-H to Si-O structure
 Anneal process is required to make dense SiO2 network

Deposition H3Si SiH3 Cure

H
H3Si H SiH3
N Si N
SiH3 H3Si
N Si N
* H
SiH3 Si O Si
SiH2 H3Si
H3Si N SiH3 + [NH3] H SiH2
SiH3 O3
H Si
H
SiO2
Si
TSA Network

3 Applied Materials Confidential

 Flowable chamber overview

Diffuser

Dome

Dual zone
showerhead

Pumping
liner

Pedestal

4 Applied Materials Confidential

Problem statement
 One of big challenges of side-to-side deposition matching is
to make even ammonia and TSA gas delivery to each side
in Eterna chamber
 To meet this requirement, individual ammonia gas line and
orifice configuration for even flow split to each side were
designed

5 Applied Materials Confidential

Side matching solutions
 Individual NH3 gas delivery to each side
– Individual NH3 flow control
 Orifice control for even flow split
– 50mil orifice used to split even Ar flow between side1 and side2
– 12” long gasline designed for better mixing of Ar/NF3
 Three fine tuning knobs were developed
1. Ammonia calibration factor
2. Plasma ON time control
3. Plasma power control

6 Applied Materials Confidential

Dual gas line and TSA delivery system
Dual gas line TSA line
NH3 NH3
(side1) Ar NF3 (side2) TSA, He

Side 1 Side 2
50mil orifice chamber chamber
25mil orifice 100mil
Dep orifice
Clean
Side 1 Side 2
chamber chamber

Passivation of plasma
Ar + H2O
source
Independent NH3 flow and orifice-control gas delivery system provide
better side matching
7 Applied Materials Confidential
Selection of orifice size and mixing length
Flow simulation

NH3 NF3 Ar NH3 50mil orifice

Flow ratio (Side1/Side2)

Mixing
Length Dep Clean
(NH3+Ar) (NF3+ Ar)
3” 1.0 1.10
6” 1.0 1.05
Mixing 12” 1.0 1.01
length

• 50mil orifice is selected for even

50mil orifice Ar/NF3 flow split
• 12” gasline is designed for better
mixing

Side1 Side2

8 Applied Materials Confidential

TSA delivery on chamber lid
Chamber lid

TSA orifice (100mil)

Equal length of TSA gasline on chamber lid is designed for even TSA split

9 Applied Materials Confidential

 Fine tuning knob:
Ammonia calibration factor

4400
y = -3967.4x + 8042
2
4200
R = 0.9683
Thickness, A

4000

Side1
3800 Side2
Linear (Side1) y = -3937.8x + 7897.1
Linear (Side2) R2 = 0.9997
3600
0.95 0.96 0.97 0.98 0.99 1 1.01 1.02 1.03 1.04 1.05
NH3 Calibration factor

5% NH3 flow change makes 5% deposition rate change

10 Applied Materials Confidential

Fine tuning knob:
Plasma ON time control
Individual plasma ON time
Thickness vs plasma ON time
control (GUI)
2200
Side 1 y = 42.453x + 2122.4
Side 2 2
2100 Linear (Side 1) R = 0.9892
Linear (Side 2)

Thk, A
2000

1900 y = 41.569x + 2042.3

R2 = 0.9918

1800
-6 -5 -4 -3 -2 -1 0 1
RPS
RPS off
On delay, sec
time, sec
Plasma ON time, sec

Linear correlation is achieved (99%) b/w thickness and

plasma ON time control
11 Applied Materials Confidential
 Fine tuning knob:
Plasma power control
2400
Side 1 y = 32.3x + 1264.3
Side 2 R2 = 0.9952
Linear (Side 1)
Linear (Side 2)
DR, A/min

2200

2000 y = 31.533x + 1254.8

R2 = 0.9949

1800
20 22 24 26 28 30 32 34
Plasma source power (AU)
RPS power (AU)

Excellent correlation between deposition rate and plasma source power

control
12 Applied Materials Confidential
 Side-to-side matching during Ph5 Marathon

5500 2.5%
ThK-S1 THK-S2 StS

RPS On time 2.0%

5300
Control

1.5%
5100

StS MIsmatch (%)

Thickness, A

1.0%
4900
0.5%

4700
0.0%

4500
-0.5%

4300 -1.0%
1450 1650 1850 2050 2250 2450 2650 2850 3050 3250 3450 3650

Wafer count

Side matching is nearly perfect (0.3%) after plasma source ON-time

control
13 Applied Materials Confidential
Summary / Conclusion
 Individual ammonia gasline and orifice configuration were
designed to have even flow split to each side

 Three fine tuning knobs for side-to-side matching have

been developed
– Ammonia calibration factor adjust
– Plasma ON time control
– Plasma power control

 Side-to-side thickness matching is nearly perfect (0.3%)

using plasma ON time control during Ph5 Marathon (over
5000 wafers)

14 Applied Materials Confidential

Acknowledgment
Jang-Gyoo Yang
Qiwei Liang
Dima Lubomirsky
Kien Chuc
Lili Ji
Yue Zhao
Earl Solis
Abhijit Mallick
Jingmei Liang
Nitin Ingle
Rocky Bermillo
Mao Lim
JR Sarmiento

15 Applied Materials Confidential