EEng-6024

Power System II
Advanced Power electronics and Drives

Yoseph Mekonnen

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 Lecture 2
Power Electronic Devices

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 Outline
 Bipolar Junction Transistors (BJT)
 Power MOSFETs
 Silicon Controlled Rectifiers (SCR)
 Gate Turn off (GTO)
 Insulated Gate Bipolar Transistor (IGBT)

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 Power Transistors
 Have controlled turn-on and turn off characteristics
 Operated in the saturation region to be used for switching
purpose resulting in a low-on-state voltage drop.
 There switching speed is higher than thyristors but they have
lower voltage and current ratings.
 There are mostly used from low-to- medium voltage
applications.
 The Most common Power Transistor Families are.
1. Bipolar junction transistors(BJTs)
2. Metal Oxide Semiconductor Field-Effect Transistors
(MOSFETs)
3. Static Induction Transistors (SITs)
4. Insulated Gate Bipolar Transistors (IGBTs)
5. COOLMOS
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 Bipolar Junction Transistor
 A BJT is formed by adding a second p- or n- region to a pn
junction diode. (becomes PNP or NPN)
 Has controlled turn on and turn off characteristics.
 Has two junction (CBJ and BEJ)
 CBJ-Collector – base Junction
 BEJ-Base- Emitter Junction
 Has Three configuration
 The common base, common emitter
and common collector configuration.
 Common Emitter configuration is
used for switching application.

Fig. common collector, common emitter, common base

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 Steady-State Characteristics
 Consider a common emitter transistor

Fig. Output Characteristics

Fig. CE circuit diagram

Fig. Input Characteristics Plot IC as f(VCE, IB)
Operating Regions (IB) Cutoff region (off)
Plot IB vs VCE)
Active region  The transistor is off or the
As VCE increases, more VBE base current is not enough to
Transistor amplifies required to turn the BE on so that turn it on and both junctions
base current. IB>0. are reverse biased.
As IB increase VCE
Active region
decreases.
•BEJ Forward biased
Saturation Region
•CBJ Reverse biased
IB is high hence VCE Saturation region (on)
low
•both BE and BC forward
Acts as a Switch biased
Fig. Transfer
Characteristics

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 …contd..
Large Signal Model Analysis

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 …contd..
Consider the Circuit

IC = βFIB

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 …contd..
Consider the Circuit

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 …contd..
Consider the Circuit

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 …contd..
Example

Solution

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 …contd..
Example

Solution

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 Switching Characteristics
A forward biased pn junction exhibits two parallel capacitance: a
depletion layer capacitance and a diffusion capacitance.
A reverse biased pn junction has only depletion capacitance.
Under steady state conditions these capacitance do not play any
role.
Under transient conditions they influence the turn on and turn off
behavior of the transistor.

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…Contd..

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 …Contd..
Due to internal capacitances the transistor does not turn on
instantly.
As the input voltage VB rises from zero to
V1 and the base current rises to IB1, the
collector current doesn’t respond
immediately.
There is a delay known as delay time td
before any collector current flows.
This delay is required to charge up the
capacitance of the BEJ to the forward
biased voltage VBE (0.7 V).
After this delay the collector current rises
to the steady state value of Ics.
The rise time tr depends on the time
constant determined by BEJ capacitance.

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…Contd..

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…Contd..

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 …Contd..

See Example 4.2 page 132 by M H Rashid

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 Reading Assignment
Read the steady state, switching and transient characteristics of
the remaining power Transistor families such as:
1. Metal Oxide Semiconductor Field-Effect Transistors
(MOSFETs)
2. Static Induction Transistors (SITs)
3. Insulated Gate Bipolar Transistors (IGBTs)
4. COOLMOS
including
1. Thyristors
2. GTO

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 Power MOSFETs
A power MOSFET is a voltage controlled device and
requires a small input current.
Has high switching speed.
Power MOSFET
 Good switching time
 Voltage controlled devices which requires very small
current to switch on.
 Have simple gate drive requirement.

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 Thyristor Devices: SCR
 SCR: Acts like a diode where you can select when
conduction will start, but not when it stops.

Fig. Two-transistor behavioral model of a thyristor.

 Stay off until a gate pulse is applied while VAK> 0.

 Once on, behaves like a diode and does not turn off until i
->0.
 To stay off (after VAK > 0 again) must have i stay at 0 for
a short time tq-> (10 –l00us)

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 IGBT and GTO
IGBT combines the advantage of BJT and power MOSFET.
Has high input impedance(MOSFETs).
Low on-state conduction loss (BJT).
BJT
Has good on-state characteristics
Long switching time (@ pn-state)
Current controlled devices with small current gain
Requires complex base drive circuit to provide the
base current during on-state.
Power MOSFET
Good switching time
Voltage controlled devices which requires very
small current to switch on.
Have simple gate drive requirement.
GTO
GTO is a special p-n-p-n Thyristor which can be
turned off by negative gate current.

Fig. Two-transistor behavioral model of a GTO thyristor.

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 IGBT
IGBT

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 GTO
 GTO is a special p-n-p-n Thyristor which can be turned off by
negative gate current.

Fig. Two-transistor behavioral model of a GTO thyristor.

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