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Features
• Output voltage 3.3V ± 2%
• 150 mA Output current
• Extreme low current consumption in ON state
• Inhibit function: Below 1 µA current consumption
in off mode
• Early warning P-DSO-8-3
• Reset output low down to VQ = 1 V
• Overtemperature protection
• Reverse polarity proof
• Wide temperature range
• Green Product (RoHS compliant)
• AEC Qualified
Functional Description
The TLE 4299 is a monolithic voltage regulator with fixed P-DSO-14-3, -8, -9, -11
Type Package
TLE 4299 GV33 PG-DSO-8-16
TLE 4299 GMV33 PG-DSO-14-30
Circuit Description
The TLE 4299 is a PNP based very low drop linear voltage regulator. It regulates the
output voltage to VQ = 3.3 V for an input voltage range of 4.4 V ≤ VI ≤ 45 V. The control
circuit protects the device against potential damages caused by overcurrent and
overtemperature.
The internal control circuit achieves a 3.3 V output voltage with a tolerance of ± 2%.
The device includes a power on reset and an under voltage reset function with adjustable
reset delay time and adjustable reset switching threshold as well as a sense control/early
warning function. The device includes an inhibit function to disable it when the ECU is
not used for example while the motor is off.
The reset logic compares the output voltage VQ to an internal threshold. If the output
voltage drops below this level, the external reset delay capacitor CD is discharged. When
VD is lower than VST, the reset output RO is switched Low. If the output voltage drop is
very short, the VST level is not reached and no reset-signal is asserted. This feature
avoids resets at short negative spikes at the output voltage e.g. caused by load changes.
As soon as the output voltage is more positive than the reset threshold, the delay
capacitor is charged with constant current. When the voltage reaches VDT the reset
output RO is set High again.
The reset delay time and the reset reaction time are defined by the external capacitor
CD. The reset function is active down to VI = 1 V.
In addition to the normal reset function, the device gives an early warning. When the SI
voltage drops below VSI,low, the devices asserts the SI output Low to indicate the logic
and the µ-processor that this voltage has dropped. The sense function uses a hysteresis:
When the SI-voltage reaches the VSI,high level, SO is set high again. This feature can be
used as early warning function to notice the µ-controller about a battery voltage drop and
a possible reset in a short time. Of course also any other voltage can be observed by this
feature.
The user defines the threshold by the resistor-values RSI1 and RSI2.
For the exact timing and calculation of the reset and sense timing and thresholds, please
refer to the application section.
TLE 4299
I Q
Band- Current
Gap- and RSO
Reference Saturation
Control
RRO
SO
SI
Reference RO
Reset
Control
RADJ
D GND
AEB03103
TLE 4299
I Q
Band- Current
Gap- and RSO
Reference Saturation
Control
Inhibit RRO
INH Control
SO
SI
Reference RO
Reset
Control
RADJ
D GND
AEB03104
PG-DSO-8-16
I 1 8 Q
SI 2 7 SO
RADJ 3 6 RO
D 4 5 GND
AEP02832
PG-DSO-14-30
RADJ 1 14 SI
D 2 13 I
GND 3 12 GND
GND 4 11 GND
GND 5 10 GND
INH 6 9 Q
RO 7 8 SO
AEP02831
Input I
Input voltage VI – 40 45 V –
Sense Input SI
Reset Delay D
Voltage VD – 0.3 7 V –
Reset Output RO
Voltage VR – 0.3 7 V –
Sense Output SO
Output Q
Temperature
Operating Range
Thermal Data
1)
FR4, 80x80x1,5mm; 35µ Cu, 5µ Sn; Footprint only
2)
FR4, 80x80x1,5mm; 35µ Cu, 5µ Sn; 300mm2
3)
Measured to pin 5
4)
Measured to pin 4
Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
In the operating range, the functions given in the circuit description are fulfilled.
Characteristics
VI = 13.5 V; Tj = – 40 °C < Tj < 150 °C
Parameter Symbol Limit Values Unit Measuring Condition
min. typ. max.
Output voltage VQ 3.23 3.30 3.37 V 1 mA ≤ IQ ≤ 100 mA;
5.5 V ≤ VI ≤ 16 V
Output voltage VQ 3.20 3.30 3.40 V IQ ≤ 150 mA;
5.5 V ≤ VI ≤ 16 V
Current limit IQ 250 400 500 mA –
Current consumption; Iq – 65 105 µA Inhibit ON;
Iq = II – IQ IQ ≤ 1 mA, Tj < 85 °C
Current consumption; Iq – 170 500 µA Inhibit ON;
Iq = II – IQ IQ = 10 mA
Current consumption; Iq – 0.7 2 mA Inhibit ON;
Iq = II – IQ IQ = 50 mA
Current consumption; Iq – – 1 µA VINH = 0 V;
Iq = II – IQ Tj = 25 °C
Load regulation ∆VQ – 5 30 mV IQ = 1 mA to 100 mA
Line regulation ∆VQ – 10 25 mV VI = 6 V to 28 V;
IQ = 1 mA
Power Supply Ripple PSRR – 66 – dB fr = 100 Hz; Vr = 1 VSS;
rejection IQ = 100 mA
Characteristics (cont’d)
VI = 13.5 V; Tj = – 40 °C < Tj < 150 °C
Parameter Symbol Limit Values Unit Measuring Condition
min. typ. max.
Reset Generator
Characteristics (cont’d)
VI = 13.5 V; Tj = – 40 °C < Tj < 150 °C
Parameter Symbol Limit Values Unit Measuring Condition
min. typ. max.
Sense high reaction time tpd SO LH – 2.4 4.0 µs RSO ext = 5.6kΩ
Sense low reaction time tpd SO HL – 2.5 6.0 µs RSO ext = 5.6kΩ
Note: The listed characteristics are ensured over the operating range of the integrated
circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at TA = 25 °C and
the given supply voltage.
II IQ1
VI I Q1 VQ1
TLE 4299
IINH
VINH INH
(TLE4299GMV33
only) D RO VRO
CD
Ich
100 nF
IRADJ
VRADJ RADJ
ISI
VSI SI SO VSO
GND
IGND
AES02835
Application Information
CI1
Band- Current
Gap- and RSO
Reference Saturation
Control
RRO
RSI1 SO
SI
RO
RSI2 Reference
Reset
Control
RADJ1
RADJ
GND D
RADJ2
CD
AES03105
CI1
Band- Current
Gap- and RSO
Reference Saturation
Control
From
KI. 15 INH Inhibit RRO
Logic
RSI1 SO
SI
RO
RSI2 Reference
Reset
Control
RADJ1
RADJ
GND D
RADJ2
CD
AES03106
Reset
The power on reset feature is necessary for a defined start of the microprocessor when
switching on the application. For the reset delay time after the output voltage of the
regulator is above the reset threshold, the reset signal is set High again. The reset delay
time is defined by the reset delay capacitor CD at pin D.
The under-voltage reset circuitry supervises the output voltage. In case VQ decreases
below the reset threshold the reset output is set LOW after the reset reaction time. The
reset LOW signal is generated down to an output voltage VQ to 1 V. Both the reset
reaction time and the reset delay time is defined by the capacitor value.
The power on reset delay time is defined by the charging time of an external delay
capacitor CD.
CD = (td × ID) / ∆V [1]
td = CD x ∆V / ID [2]
VI
t
VQ < t RR
V RT
t
dV I D
VD =
dt C D
V DT
V ST
t RR t
td
V RO
VRO, SAT
t
Power-on-Reset Thermal Voltage Dip Undervoltage Secondary Overload
Shutdown at Input Spike at Output AED03107
Early Warning
The early warning function compares a voltage defined by the user to an internal
reference voltage. Therefore the supervised voltage has to be scaled down by an
external voltage divider in order to compare it to the internal sense threshold of typical
1.36 V. The sense output pin is set low, when the voltage at SI falls below this threshold.
A typical example where the circuit can be used is to supervise the input voltage VI to
give the microcontroller a prewarning of low battery condition.
Calculation to the voltage divider can be easily done since the sense input current can
be neglected.
Sense
Input
Voltage
VSI, High
VSI, Low
Sense
t PD SO LH t PD SO HL
Output
High
Low
t
100
Tj = 150 °C
8
IQ = 1mA
6 Tj = 25 °C
10
4 Tj = -40 °C
1
2
0.01
-40 -20 0 20 40 60 80 100 120 140 0 40 80 120 160
IQ [mA]
Tj [°C]
V Ι = 13.5 V
2 3.3
1.5 3.2
1 3.1
0.5 3.0
IQ = 10mA
IQ = 1mA
2.9
0 10 20 30 40 -40 0 40 80 120 C 160
VI [V] Tj
-20 Tj = -40 °C
450 VI = 13.5 V Tj = 25 °C
-40 Tj = 150 °C
400
-60
350
-80
300
-100
250
-40 -20 0 20 40 60 80 100 120 140 0 10 20 30 40
Tj [°C] VQ [V]
250 4
Tj = 25 C
200
3
RL = 50 Ω
150
Tj = 125 C 2
100
1
50
0
0 0 1 2 3 4 V 5
0 10 20 30 40 V 50
VΙ
VΙ
10 VI=6V IQ = 0.1 mA
VI=25V
70
IQ = 1 mA
1 Stable 60
Region
VI=25V
IQ = 10 mA
VI=6V 50
CQ = 22µF
ESRCQ 20_Load Trancient vs time 125.vsd
[Ω]
Tj = -40 °C
IQ1:100mA Tj=125°C
Vi=13.5V
10 VI=6V
VI=25V
1 Stable
Region
VI=25V VQ
VI=6V
0.1
Line Transient Response Peak Voltage Inhibit Input Current at Input Voltage
DVQ Extremes (INH=OFF)
25_IINH vs VIN INH_off.vsd
IINH
21_Line Trancient vs time 125.vsd
[µA] INH = OFF
Tj=125°C 50
dVI 2V
Vi=13.5V
40
30
Tj = -40...150°C
VQ
20
10
T=500µs/DIV VQ=50mV/DIV
10 20 30 40
VIN [V]
Inhibut Input Current IINH at Inhibit Input Reset Trigger Threshold VRT versus
Voltage Extremes Junction Temperature Tj
24_IINH vs VINH.vsd 26_VRT VS TEMP.VSD
3.25
IINH VRT VI = 13.5 V
[µA] [V]
50
40 3.15
Tj = 150°C
30 3.10 Reset Trigger
Threshold
20 Tj = 25°C 3.05
Tj = -40°C
10 3.0
Reset Delay Time TRD versus Junction Sense Threshold High versus Junction
Temperature Tj Temperature Tj
27_RESETDELAY VS 34_VSI_HI VS TEMP.VSD
60 TEMP.VSD 1.60
TRD VI = 13.5 V VSI_Hi VI = 13.5 V
[ms] [V]
50 1.50
CD = 100nF
45 1.45
40 1.40
35 1.35
-40 -20 0 20 40 60 80 100 120 140 -40 -20 0 20 40 60 80 100 120 140
Tj [°C] Tj [°C]
Delay Capacitor Charge Current versus Sense Threshold Low versus Junction
Junction Temperature Tj Temperature Tj
27A_ID-TEMP.VSD 35_VSI_LO VS TEMP.VSD
6 1.50
ICH VI = 13.5 V VSI_Lo VI = 13.5 V
[µA] [V]
4 1.40
3 1.35
2 1.30
1 1.25
-40 -20 0 20 40 60 80 100 120 140 -40 -20 0 20 40 60 80 100 120 140
Tj [°C] Tj [°C]
Package Outlines
PG-DSO-8-16 (SMD)
(Plastic Dual Small Outline)
0.35 x 45˚
4 -0.21)
1.75 MAX.
0.175 ±0.07
0.19 +0.06
(1.45)
8 MAX.
1.27 B
0.1 0.64 ±0.25
0.41+0.1
-0.06
2)
6 ±0.2
0.2 M A B 8x 0.2 M C 8x
8 5
1 4
A
5 -0.2 1)
Index Marking
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Lead width can be 0.61 max. in dambar area
GPS01181
PG-DSO-14-30 (SMD)
(Plastic Dual Small Outline)
0.35 x 45˚
1.75 MAX.
0.175 ±0.07
C
0.19 +0.06
1)
(1.47)
8˚MAX.
4 -0.2
1.27 B
0.1 0.64 ±0.25
2)
0.41+0.10
-0.06 6±0.2
0.2 M A B 14x
14 8 0.2 M C
1 7
1)
8.75 -0.2
A
Index Marking
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Lead width can be 0.61 max. in dambar area GPS01230
Revision History
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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Infineon Technologies Office (www.infineon.com).
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