THYRISTOR

INDUSTRIAL ELECTRONICS – LECTURE PRESENTATION

TUP-TAGUIG, ELECTRICAL DEPARTMENT

 LESSON OBJECTIVE
➢ Describe the basic structure and operation of a 4-layer diode
➢Describe the basic structure and operation of an SCR
➢Discuss several SCR applications
➢Describe the basic structure and operation of the diac and triac
➢Describe a silicon-controlled switch (SCS)
➢Describe the basic structure and operation of the unijunction
transistor
➢Describe the basic structure and operation of the programmable UJT
TUP-TAGUIG, ELECTRICAL DEPARTMENT
 KEY TERMS
➢ DIAC - A two-terminal four-layer semiconductor device
(thyristor) that can conduct current in either direction when
properly activated
➢Forward-break-over voltage (VBR(F)) - The voltage at which
a device enters the forward-blocking region
➢4 – Layer Diode - The type of two-terminal thyristor that
conducts current when the anode-to-cathode voltage
reaches a specified “break-over” value

TUP-TAGUIG, ELECTRICAL DEPARTMENT

 KEY TERMS
➢ HOLDING CURRENT (IH) - The value of the anode current
below which a device switches from the forward-conduction
region to the forward-blocking region
➢ LASCR - Light-activated silicon-controlled rectifier; a four-layer
semiconductor device (thyristor) that conducts current in one
direction when activated by a sufficient amount of light and
continues to conduct until the current falls below a specified
value

TUP-TAGUIG, ELECTRICAL DEPARTMENT

 KEY TERMS
➢ Programmable unijunction transistor; a type of three-terminal
thyristor (more like an SCR than a UJT) that is triggered into
conduction when the voltage at the anode exceeds the voltage at
the gate
➢ SCR - Silicon-controlled rectifier; a type of three-terminal thyristor
that conducts current when triggered on by a voltage at the single
gate terminal and remains on until the anode current falls below a
specified value
➢ SCS - Silicon-controlled switch; a type of four-terminal thyristor
that has two gate terminals that are used to trigger the device on
and off
TUP-TAGUIG, ELECTRICAL DEPARTMENT
 KEY TERMS
➢ Standoff ratio - The characteristic of a UJT that
determines its turn-on point
➢ Thyristor - A class of four-layer (pnpn) semiconductor
devices
➢ TRIAC - A three-terminal thyristor that can conduct
current in either direction when properly activated
➢UJT - Unijunction transistor; a three-terminal single pn
junction device that exhibits a negative
resistance characteristic.
TUP-TAGUIG, ELECTRICAL DEPARTMENT
 INTRODUCTION
➢In this Lecture, several types of semiconductor devices are
introduced. A family of devices known as thyristors are
constructed of four semiconductor layers (pnpn)
➢Thyristors include the 4-layer diode, the silicon-controlled
rectifier (SCR), the diac, the triac, and the silicon-controlled
switch (SCS)
➢These types of thyristors share certain common
characteristics in addition to their four-layer construction

TUP-TAGUIG, ELECTRICAL DEPARTMENT

 INTRODUCTION
➢They act as open circuits capable of withstanding a certain
rated voltage until they are triggered. When triggered, they turn
on and become low-resistance current paths and remain so,
even after the trigger is removed, until the current is reduced to
a certain level or until they are triggered off, depending on the
type of device
➢ Thyristors can be used to control the amount of ac power to a
load and are used in lamp dimmers, motors-peed controls,
ignition systems, and charging circuits, to name a few.

TUP-TAGUIG, ELECTRICAL DEPARTMENT

 Summary

Thyristors

Thyristors are a class of semiconductor devices characterized

by 4-layers of alternating p- and n-material. Four-layer devices
act as either open or closed switches; for this reason, they are
most frequently used in control applications.
Some thyristors and their symbols are

(a) 4-layer diode (b) SCR (c) Diac (d) Triac (e) SCS

TUP-TAGUIG, ELECTRICAL DEPARTMENT

 Summary

Thyristors

The concept of 4-layer devices is usually Anode

shown as an equivalent circuit of a pnp pn junction 1
and an npn transistor. Ideally, these
Q1
devices would not conduct, but when
forward biased, if there is sufficient pn junction
2
leakage current in the upper pnp device,
Q2
it can act as base current to the lower
npn device causing it to conduct and
pn junction 3
bringing both transistors into saturation.
Cathode

TUP-TAGUIG, ELECTRICAL DEPARTMENT

 Summary

The Four-Layer Diode

The 4-layer diode (or Shockley diode) is a type of thyristor
that acts something like an ordinary diode but conducts in
the forward direction only after a certain anode to cathode
voltage called the forward-breakover voltage is reached.

The 4-layer diode has two leads, labeled the Anode (A) A

anode (A) and the cathode (K). The symbol p

reminds you that it acts like a diode. It does n
1

not conduct when it is reverse-biased. p

2

3
n

Cathode (K) K

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 Summary

The Four-Layer Diode

The characteristic curve for a 4-layer diode shows the
forward blocking region. When the anode-to-cathode
voltage exceeds VBR, conduction occurs. The switching
current at this point is IS.
IA
Once conduction begins, it
will continue until anode Forward-
conduction
current is reduced to less than On region
the holding current (IH). This IH
IS
is the only way to stop Off Forward-
VAK blocking
0 VBR(F)
conduction. region

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 Summary
A

The SCR
The SCR had its roots in the 4-layer diode. By
adding a gate connection, the SCR could be
G
triggered into conduction. This improvement made
a much more useful device than the 4-layer diode.
K
The SCR can be turned on by
IA
exceeding the forward
breakover voltage or by gate IG2 > IG1 IG1 > IG0 I = 0
I H0 G0
current. Notice that the gate
I H1
current controls the amount
I H2
of forward breakover voltage VR VF
0 VBR(F 2) VBR(F1) VBR(F0)
required for turning it on. IR

TUP-TAGUIG, ELECTRICAL DEPARTMENT

 Summary

The SCR
Like the 4-layer diode, the SCR will conduct as long as
forward current exceeds IH. There are two ways to drop the
SCR out of conduction: 1) anode current interruption
and 2) forced commutation. +V
Anode current can be interrupted by breaking the anode
current path (shown here), providing a path around the SCR,
IA = 0
or dropping the anode voltage to the point that IA < IH.
Force commutation uses an external circuit to momentarily RA

force current in the opposite direction to forward conduction.

SCRs are commonly used in ac circuits, which forces the G

SCR out of conduction when the ac reverses.

TUP-TAGUIG, ELECTRICAL DEPARTMENT

 Summary

SCR Specifications
Three important SCR specifications are:
Forward-breakover voltage, VBR(F): IF
This is the voltage at which the SCR Characteristic
enters the forward-conduction region. for IG = 0
Forward-
Holding current, IH: This is the value of conduction
region (on)
anode current below which the SCR for IG = 0
switches from the forward-conduction IH
VBR(R)
region to the forward-blocking region. VR VF
0 VBR(F)
Reverse-
Gate trigger current, IGT: This is the blocking Forward-
Reverse- blocking
value of gate current necessary to switch avalanche
region
region (off)
the SCR from the forward-blocking region

region to the forward-conduction region IR

under specified conditions.

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 Summary

SCR Applications
SCRs are used in a variety of power control applications.
One of the most common applications is to use it in ac
circuits to control a dc motor or appliance because the
SCR can both rectify and control.
The SCR is triggered on the
I
positive cycle and turns off on R1
A
the negative cycle. A circuit
R2
like this is useful for speed R4
R3
control for fans or power tools
B
and other related applications. M

TUP-TAGUIG, ELECTRICAL DEPARTMENT

 Summary

SCR Applications
Another application for SCRs is in crowbar circuits
(which get their name from the idea of putting a crowbar
across a voltage source and shorting it out!)
The purpose of a crowbar SW Fuse

circuit is to shut down a power

DC
supply in case of over-voltage. power supply
VOUT

Once triggered, the SCR

D1
latches on. The SCR can
handle a large current, which D2
VTRIG
R1

causes the fuse (or circuit R2

R3
breaker) to open. "Crowbar circuit"

TUP-TAGUIG, ELECTRICAL DEPARTMENT

 Summary
A1

The Diac
The diac is a thyristor that acts like two back-to-back
4-layer diodes. It can conduct current in either
direction. Because it is bidirectional, the terminals are A2

equivalent and labeled A1 and A2. I F

The diac conducts current after the

breakdown voltage is reached. At that
point, the diac goes into avalanche IH
conduction, creating a current pulse VR
VBR(R)
VF
0 VBR(F)
sufficient to trigger another thyristor (an –IH

SCR or triac). The diac remains in

conduction as long as the current is
above the holding current, IH. IR

TUP-TAGUIG, ELECTRICAL DEPARTMENT

 Summary
A1
The Triac
G
The triac is essentially a bidirectional SCR but the A2
anodes are not interchangeable. Triggering is done by
applying a current pulse to the gate; breakover triggering
is not normally used. IA

When the voltage on the A1

terminal is positive with respect
IH0 IG2 IG1 IG0
to A2, a gate current pulse will IH1

cause the left SCR to conduct. –VA

VBR(R0) VBR(R1) VBR(R2)
IH2
VA
VBR(F2) VBR(F1) VBR(F0)
When the anode voltages are –IH2
–IH1
reversed, the gate current pulse –IG0 –IG1 –IG2 –IH0

will cause the right SCR to

conduct. –IA

TUP-TAGUIG, ELECTRICAL DEPARTMENT

 Summary

Triac Applications
Triacs are used for control of ac in applications like
electric range heating controls, light dimmers, and
small motors.
Triac on
Like the SCR, the RL
IL
triac latches after
triggering and turns A1 Delay
Vin angle
off when the current is
G Conduction
below the IH, which angle
A2
happens at the end of VG
each alteration.

TUP-TAGUIG, ELECTRICAL DEPARTMENT

 Summary

The Silicon-Controlled Switch (SCS) Anode (A)

Anode
gate
The SCS is similar to an SCR but with Cathode
(G A)

two gates. It can be triggered on with a gate

(GK)
positive pulse on the cathode gate, and Cathode (K)
can be triggered off with a positive pulse
on the anode gate. +VCC

VGK GA
In this example, the SCS is controlling A
a dc source. The load is in the cathode VGA
GK
circuit, which has the advantage of VL
one side of the load being on circuit K
ground. RL

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 Summary
B2

The Unijunction Transistor (UJT)

E
The UJT consists of a a block of lightly-doped
(high resistance) n-material with a p-material
grown into its side. It is often used as a trigger B1

device for SCRs and triacs. V E

The UJT is a switching device; Cutoff

Negative
resistance Saturation
VP
it is not an amplifier. When the Peak
point
emitter voltage reaches VP (the
peak point), the UJT “fires”,
going through the unstable Valley point
negative resistance region to VV

produce a fast current pulse.

IE
IP IV

TUP-TAGUIG, ELECTRICAL DEPARTMENT

 Summary

The Unijunction Transistor (UJT)

The equivalent circuit for a UJT shows that looks like a
diode connected to a voltage divider. The resistance of the
lower divider (r’B1) is inversely proportional to the emitter
current. When the pn junction is first B 2

forward-biased, the junction

r′
resistance of r’B1 suddenly appears B2

to drop, and a rush of current occurs. E +

V
–
pn +
V BB
+ –
An important parameter is h, which is the VEB1 IE
– ηVBB
intrinsic standoff ratio. It represents the r′B1
ratio of r’B1 to the interbase resistance r’BB B1
with no current.

TUP-TAGUIG, ELECTRICAL DEPARTMENT

 Summary

The Unijunction Transistor (UJT) Application

A circuit using a UJT to fire an SCR is shown. When the
UJT fires, a pulse of current is delivered to the gate of the
SCR. The setting of R1 determines when the UJT fires. The
diode isolates the UJT
from the negative part D
A
of the ac. R
1
R L

VE UJT
The UJT produces a fast,
reliable current pulse to RG SCR
B
the SCR, so that it tends
to fire in the same place C R2

every cycle.

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 Summary
A

The Programmable Unijunction Transistor (PUT)

G
The PUT is a 4-layer thyristor with a gate. It is
primarily used as a sensitive switching device.
The gate pulse can trigger a sharp increase in
current at the output. V (anode-to-cathode voltage)
K
AK

The characteristic of a PUT is

VP
similar to a UJT, but the PUT
intrinsic standoff ratio can be
“programmed” with external
resistors and the UJT has a VV
fixed ratio.
0 IP IV IA
(anode current)

TUP-TAGUIG, ELECTRICAL DEPARTMENT

 Summary

The Programmable Unijunction Transistor (PUT)

The principle application for a PUT is for driving SCRs and
triacs, but, like the UJT, can be used in relaxation oscillators.
For the circuit to oscillate, R1 must be large +VCC
enough to limit current to less than the valley
current (IV). The period of the oscillations is
R1 R2
given by:
1
T = R1C ln
1 −h A
G
C R3
where K
R4
R3
h=
R2 + R3

TUP-TAGUIG, ELECTRICAL DEPARTMENT

 Summary

The Programmable Unijunction Transistor (PUT)

What is intrinsic standoff ratio, and the period of the circuit?

+VCC
+20 V
R3 10 k
h= = = 0.33
R2 + R3 20 k + 10 k
R1 R2
1 20 k
T = R1C ln
220 k

1 −h A
1 G
= ( 220 k )( 0.01 μF ) ln = 0.89 ms R3
1 − 0.33 C
K 10 k
0.01 mF
R4
27 

What is the frequency? 1.12 kHz

TUP-TAGUIG, ELECTRICAL DEPARTMENT

 Selected Key Terms

4-layer diode The type of 2-terminal thyristor that conducts

current when the anode-to-cathode voltage reaches
a specified “breakover” value.

Thyristor A class of four-layer (pnpn) semiconductor

devices.

SCR Silicon-controlled rectifier; a type of three

terminal thyristor that conducts current when
triggered by a voltage at the single gate terminal
and remains on until anode current falls below a
specified value.
 Selected Key Terms

LASCR Light-activated silicon-controlled rectifier; a four

layer semiconductor device (thyristor) that
conducts current in one direction when activated
by a sufficient amount of light and continues to
conduct until the current falls below a specified
value.
Diac A two-terminal four-layer semiconductor device
(thyristor) that can conduct current in either
direction when properly activated.
Triac A three-terminal thyristor that can conduct current
in either direction when properly activated.
 Selected Key Terms

SCS Silicon-controlled switch; a type of four-terminal

thyristor that has two gate terminals that are used
to trigger the device on and off.
UJT Unijunction transistor; a three terminal single pn
junction device that exhibits a negative resistance
characteristic.
PUT Programmable unijunction transistor; a type of
three terminal thyristor (physically more like an
SCR than a unijunction) that is triggered into
conduction when the voltage at the anode exceeds
the voltage at the gate.