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(b) a negative pulse on the gate (d) a positive pulse on the cathode gate and a negative
pulse on the anode gate
(c) anode current interruption
View Answer:
(d) answers (a), (b), and (c)
14. Which of the following is not a characteristic of the
(e) answers (a) and (c) UJT?
7. In the forward-blocking region, the SCR is (a) intrinsic standoff ratio
(a) reverse-biased (b) negative resistance
(b) in the off state (c) peak-point voltage
(c) in the on state (d) bilateral conduction
(d) at the point of breakdown View Answer:
8. The specified value of holding current for an SCR 15. The PUT is
means that
(a) much like the UJT
(a) the device will turn on when the anode current
exceeds this value (b) not a thyristor
(c) triggered on and off by the gate-to-anode voltage 2). Silicon controlled rectifier (SCR) is also called as
_________.
(d) not a four-layer device
Semiconductor controlled rectifier
41.The number of leads in an SCR are :
A. 2 Semiconductor conducting rectifier
B. 3 Semiconductor controlled resistor
C. 4
None of the above
D. 5
3). SCR has ________ layers.
42.In a single phase full wave converter (M-2
2
connection) feeding on R - L load, the input voltage
is v = Vm sin ωt. The expression for dc output voltage is 3
4
5
4). SCR principle was developed by _________.
Goldey
Holonyak
Tanenbaum
All the above
5). SCR principle was developed by Goldey,
Tanenbaum, Holonyak, and Moll in which year?
Zero Off-state
2 Zero stage
22). Forward conduction type mode, anode terminal
3 is connected to ______ type voltage source.
4 Positive
5 Negative
14). SCR is _______ directional type device.
Zero
Multi
Ground
Uni 25). Which of the following junctions in SCR forward
conduction type mode are forward biased?
Bi
J1
Mono
15). SCR is a unidirectional type device, means it J3
conducts in a _______ direction.
J2
Single direction
Both a and b
Multiple direction
No direction
Bi- direction