ε0 vacuum permittivity 8.854 187 ·10-12 [A·s·V-1·m-1] h Planck constant 6.626 069 ·10-34 [J·s] kB Boltzmann constant 1.380 649 ·10-23 [J·K-1] m0 electron rest mass 9.108 ·10-31 [kg] μ0 vacuum permeability 4π ·10-7 [V·s·A-1·m-1] q elementary charge 1.602 ·10-19 [C] Z0 impedance of free space 367.7 [Ω]
SELECTED PROPERTIES OF SILICON (AT 300 K)
EG energy band gap 1.12 [eV] εr relative permittivity 11.7 [-] μe electron mobility 1350 ·10-4 [m2·V-1·s-1] μh hole mobility 480 ·10-4 [m2·V-1·s-1] NC effective density of states in the conduction band 3.0 ·1025 [m-3] NV effective density of states in the valence band 1.0 ·1025 [m-3] ni intrinsic concentration of carriers 1.5 ·1016 [m-3] n refractive index 3.5 (at λ=1100nm) [-]