Pe Bio CH2

CHAPTER TWO
POWER ELECTRONICS
SWITCHING DEVICES
19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering| Gashaye G.

2.1 Semi-Conductor Devices
 Since 1970, various types of power semiconductor devices were developed and became commercially
available.
 The power semiconductors, which are made of either silicon or silicon carbide.
 Silicon carbide devices are, under development.
 A majority of the devices are made of silicon. These devices can be divided broadly into three types: (1) power
diodes, (2) transistors, and (3) thyristors.
 The earlier devices were made of silicon materials and the new devices are made of silicon carbide.
 The diodes are made of only one pn-junction, whereas transistors have two pn-junctions and thyristors have
three pn-junctions.
 As the technology grows and power electronics finds more applications, new power devices with higher
temperature capability and low losses are still being developed.
19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.


 Advances in power Electronics is primarily due to the advances in semi-conductor

devices.
 Power semi-conductor devices are heart and soul of modern power electronics Equipment.
 They are used as switches.
 Power semiconductor switches are the work-horses of power electronics.
 There are several power semiconductors devices currently involved in several industrial
applications.
 Power Electronics switches works in two states only: Fully on (conducting) and Fully off
(blocking)

 Switches are very important and crucial components in power electronic systems
 A good power switch:
 No power loss during turning ON or OFF
 Little power required to turn it ON or OFF
 Adequate voltage and current ratings
 Low Turn-on and Turn-off times

2.2 Classification of Switching Devices
 Power switching devices can be classified as follow
 The first classification is based on number of terminals
 The two-terminal devices (diodes and DIAC) whose state is completely dependent on the external
power circuit they are connected to.
 The three-terminal devices, whose state is not only dependent on their external power circuit, but also
on the signal on their driving terminal (gate or base) (Eg, Transistors and Thyristor Except Traic )
 A second classification has to do with the numbered of Layers:
 Two layer switching devices: consists of only one junction (Diodes)
 Three layer switching devices: consists of two junctions (Transistors)
 Four layer switching devices: consists of three junctions (Thyristors)

2.2 Classification of Switching Devices
 A third classification is based on the degree of controllability:
 The uncontrollable switches consist of the diode and the diac just like in the 2-terminal classification
based on their number of terminals.
 The semi-controllable switches can be turned on but cannot be turned off directly from the gate. In
this category, the thyristor, specifically the silicon-controlled rectifier (SCR) and the triac are prime
members.
 fully-controllable switches (are all transistors and thyristors Except TRIAC, DIAC and SCRs).
 The fourth main classification is based on their bidirectional or unidirectional current capability;
 bidirectional: It is seen that only the triac and diac, are capable of bidirectional current capability while
the rest are only capable of unidirectional current flow.

2.3 Circuits and Characteristics of Switching Devices
2.3.1. Power Diodes

It is a two terminal p-n junction semi conductor device.
The two terminals of the diode are called anode and cathode.
P-N Junction of Diode Diode symbol

There are two basic characteristics of power diode
a. V-I characteristics of diode
b. Diode Reverse Recovery characteristics

a. V-I characteristics of diode
 When anode is positive with respect to cathode, diode said to be forward biased.
 When the anode is negative with respect to cathode, diode is said to be reverse biased.
 With the increase of source voltage (Vs) from zero, the initial diode current is zero.
 Diode conducts fully when the diode voltage is more than the cut-in voltage (0.7 V for Si).
 When reverse biased, a small reverse current known as

leakage current flows.
 This leakage current increases with increase in magnitude
of reverse voltage until avalanche voltage is reached
(breakdown voltage).
V-I characteristics of Diode

 Cut-in-voltage(Threshold/turn-on voltage):The voltage at which the forward diode current starts increasing
rapidly and it is also called Knee Voltage
 Forward Voltage Drop: is the voltage drop across the diode when it is forward conduction.
 Break down Voltage: is the forward-conducting junction level (∼0.7 V for Si diodes and 0.3 V for Ge diodes)
 Reverse Voltage: is the voltage drop across the diode if the voltage at the cathode is more positive than the voltage at
the anode
 Leakage Current: is the current that the diode will leak when a reverse voltage is applied to it.
 Maximum repetitive reverse voltage (VRRM), the maximum amount of voltage the diode can withstand in reverse-
bias mode, in repeated pulses.
 The power diodes are available with forward current rating of 1A to a several thousand amperes with a reverse voltage
rating of 50V to 3000V or more.

b. Diode Reverse Recovery characteristics:
 After the forward diode current decays to 0, the diode continues to conduct in the reverse direction, because
of the presence of stored charges in the two layers.
 The reverse current flows for a time is called
reverse recovery time 𝑡𝑟𝑟 .
 The diode regains its blocking capability until
reverse recovery current decay to zero.
 The reverse recovery time 𝑡𝑟𝑟 = 𝑡𝑎 + 𝑡𝑏
 𝑡𝑎 =is the time between zero crossing of forward
current and peak reverse current 𝑖𝑅𝑀
 𝑡𝑏 = is the time from peak reverse current to 25%
Reverse Recovery characteristics a) variation of forwarded current 𝑖𝑓 of peak reverse current.
b) Forward voltage drop c) Power loss in diode
𝑡𝑎
 Ratio of is called the softness factor / S-factor of the diode. This factor is a measure of the voltage
𝑡𝑏
transient that occurs during the time diode recovers.

 The diode with S-factor is equal to unity is called soft recovery diode and the diode with S-factor less
than unity is called snappy diode /fast recovery diode.
 The power loss of the diode 𝑃𝐿𝑜𝑠𝑠 = 𝑖𝑓 𝑣𝑓
𝑑𝑖 𝑑𝑖
 The peak inverse current 𝐼𝑅𝑀 𝑐𝑎𝑛 𝑒𝑥𝑝𝑟𝑒𝑠𝑠𝑒𝑑 𝑎𝑠 𝐼𝑅𝑀 = 𝑡𝑎 , where, is the rate of change of reverse
𝑑𝑡 𝑑𝑡
current
1
 The reverse recovery charge 𝑄𝑅 𝑖𝑠 𝑔𝑖𝑣𝑒𝑛 𝑎𝑠 𝑄𝑅 = 𝐼𝑅𝑀 𝑡𝑎
2

Power diodes can be classified as
 General Purpose Diodes: The diodes have high reverse recovery time of about 25 micro sec.
 They are used in low speed (frequency) applications. e.g., line commutated converters, diode
rectifiers and converters for a low input frequency up to 1 KHz.
 These diodes are generally manufactured by diffusion process.
 Fast Recovery Diodes: The diodes have low recovery time, generally less than 5 s.
 The major field of applications is in electrical power conversion i.e., in free-wheeling ac-dc and dc-ac
converter circuits.
 Use of fast recovery diodes are preferable for free-wheeling in SCR circuits because of low recovery
loss, lower junction temperature and reduced di/dt .

 Schottky Diodes: it has metal (aluminum) and semi-conductor junction.
A layer of metal is deposited on a thin epitaxial layer of the n-type silicon.
In Schottky diode there is a larger barrier for electron flow from metal to semi-conductor. Figure shows the
schotty diode.
 Therefore a Schottky diode can switch-off faster than an ordinary p-n junction diode.
 A Schottky diode has a relatively low forward voltage drop and reverse recovery losses.
 The leakage current is higher than a p-n junction diode. The maximum allowable voltage is about 100 V.
 Current ratings vary from about 1 to 300 A
 The operating frequency may be as high 100-300 kHz as the device is suitable for high frequency
application.

2.3.2. POWER TRANSISTORS
 Power transistors are devices that have controlled turn-on and turn-off characteristics.
 These devices are used a switching devices and are operated in the saturation region resulting in low on-
state voltage drop.
 They are turned on when a current signal is given to base or control terminal.
 The transistor remains on so long as the control signal is present.
 Power transistors are classified as follows
Bipolar junction transistors(BJTs)
Metal-oxide semiconductor filed-effect transistors(MOSFETs)
Static Induction transistors(SITs)
Insulated-gate bipolar transistors(IGBTs)
 Out of those transistors in this chapter MOSFETs and IGBTs will discuss

A. POWER MOSFETS:
 it is a voltage control device
 It is the recent device developed by combining the area of field effect transistor and MOS technology.
 It has three terminals that are drain, source and gate in place of the corresponding three terminals collector,
emitter and base of BJT.
 There are two types of Power MOSFETs,
 N-channel type MOSFET
 P-channel type MOSFET
Symbol of n-channel type MOSFET

Basic Structure of n-channel type MOSFET

 The power MOSFET is turned ‘ON’ when a voltage is applied between gate and source.
 The MOSFET can be turned ‘OFF’ by removing the gate to source voltage.
 Thus gate has control over the conduction of the MOSFET.
 The turn-on and turn-off times of MOSFET’s are very small.
 Hence they operate at very high frequencies; hence MOSFET’s are preferred in applications such as
choppers and inverters.
 Since only voltage drive (gate-source) is required, the drive circuits of MOSFET are very simple.
 Power MOSFETs conduction is due to majority carriers, therefore the time delay caused by
removal or recombination of minority carriers are eliminated.
 Thus power MOSFETs can work at switching frequencies in the megahertz.

Characteristics of power MOSFET
 The circuit diagram of MOSFET is shown below
N-channel MOSFET circuit diagram

a, Transfer Characteristics: It shows the variation of drain current 𝐼𝐷 as a function of gate source voltage 𝑉𝐺𝑆 .
The transfer characteristics of n-channel MOSFET is shows that there is a threshold voltage 𝑉𝐺𝑆𝑇 below which
the device is off. The magnitude of 𝑉𝐺𝑆𝑇 𝑖𝑠 𝑜𝑓 𝑡ℎ𝑒 𝑜𝑟𝑑𝑒𝑟 𝑜𝑓 2 𝑡𝑜 3𝑉.
N-channel MOSFET Transfer Characteristics

b, Output Characteristics: The power MOSFET output characteristics is shown in figure below.
It shows the variation of drain current 𝐼𝐷 as a functions of drain source Voltage 𝑉𝐺𝑆 as a parameter.
For the values of 𝑉𝐷𝑆 , the graph between 𝐼𝐷 − 𝑉𝐷𝑆 is almost linear this shows a constant value on the resistance
𝑉𝐷𝑆
𝑅𝐷𝑆 =
𝐼𝐷  A load line intersects the output characteristics
at A and B.
 Here A indicates fully-on condition and B fully-
off state.
Output characteristics of a Power MOSFET

c, Switching Characteristics: the switching characteristics of power MOSFET is shown in figure below.
 It influenced to a large extent by the internal capacitance of the devices and the internal impendence of
the gate drive circuit.
Switching characteristics of a Power MOSFET

 At turn-on, there is a initial delay 𝑡𝑑𝑛 , during which input capacitance charges to gate threshold voltage
𝑉𝐺𝑆𝑇
 There is further delay 𝑡𝑟 is called rise time, during which gate voltage rises to 𝑉𝐺𝑆𝑃 , a voltage sufficient to
drive the MOSFET in to on state.
 During 𝑡𝑟 , drain current rises from zero to full on current 𝐼𝐷 . Thus the total turn-on- time is 𝑡𝑜𝑛 = 𝑡𝑑𝑛 + 𝑡𝑟 .
 The turn-on –time can be reduced by using low impendence gate drive source.
 As MOSFET is a majority carrier device, turn-off process is initiated soon after removal of gate voltage at
time t1.

 The turn-off delay time, tdf, is the time during which input capacitance discharges from overdrive
gate voltage V1 to VGSP.
 The fall time, tf' is the time during which input capacitance discharges from VGSP to threshold voltage.
 During tf drain current falls from ID to zero.
 The power MOSFETs are very popular in switching mode power supply.
 They are available with 500V and 140A rating at present.

B. INSULATED GATE BIPOLAR TRANSISTOR (lGBT)
 IGBT is a three terminal (Collector, emitter and gate) switching devices.
 The metal oxide semiconductor insulated gate transistor or IGBT combines the advantages of BJT’s and
MOSFET’s.
 Therefore an IGBT has high input impedance like a MOSFET and low-on state power loss as in a BJT.
 Further IGBT is free from second breakdown problem present in BJT.
 The structure of IGBT is very much similar to that of Power MOSFET except one layer known as
injection layer which is p+ unlike n+ substrate in power MOSFET.
 The basic structure of the N-channel IGBT is shown next slide

IGBT Circuit Symbol
IGBT Basic Structure

 The n+ layer substrate at the drain in a Power MOSFET is now substituted in the IGBT by a p+ layer
substrate called collector C.
 The p + substrate in the IGBT is called injection layer because it injects holes into n- layer.
 The n- layer is called drift region.
 The p layer is called body of IGBT.
 The n- layer in between p+ and p regions serves to accommodate the depletion layer of pn- junction i.e.
junction J2.

 The Equivalent circuit is as shown below.
 Rd is resistance offered by n- drift region
 Rby is the resistance offered by p region to the flow of hole current Ih

 When collector is made positive with respect to emitter, IGBT gets forward biased.
 With no voltage between gate and emitter, two junctions between n- region and p region (i.e. junction J2) are
reverse biased; so no current flows from collector to emitter.
 When gate is made positive with respect to emitter by voltage VG, with gate-emitter voltage more than the
threshold voltage VGET of IGBT, an n-channel or inversion layer, is formed in the upper part of p region just
beneath the gate.
 IGBT is forward biased with collector positive and emitter negative, p+ collector region injects holes into n -
drift region.
 In short, n - drift region is flooded with electrons from p-body region and holes from p+ collector region .

 Current IC, or IE, consists of two current components:
(i) hole current Ih due to injected holes flowing from collector, p+n-p transistor Q1 p-body region resistance
Rby and emitter
(ii) electronic current Ie due to injected electrons flowing from collector, injection layer p +, drift region n-, n-
channel resistance Rch, n+ and emitter.
 This means that collector, or load, current IC =emitter current IE =Ih + Ie.
 Major component of collector current is electronic current Ie i. e. main current path for collector, or load,
current is through p+, n-, drift resistance Rd and n-channel resistance Rch.

 Therefore, the voltage drop in IGBT in its on-state is
𝑉𝐶𝐸,𝑜𝑛 = 𝐼𝐶 𝑅𝑐ℎ + 𝐼𝐶 𝑅𝑑 + 𝑉𝐽1
Where, 𝐼𝐶 𝑅𝑐ℎ =Voltage drop in n-channel
𝐼𝐶 𝑅𝑑 = Voltage drop across drift in n- region
𝑉𝐽1 = Voltage drop across forward biased p +n - junction J1

IGBT Characteristics
 Static I-V or output characteristics of an IGBT (n-channel type) show the plot of collector current IC versus
collector-emitter voltage VCE for various values of gate-emitter voltages VGE1 , VGE2 etc.
 IGBT characteristics is same as in BJT except control is by VGE. Therefore IGBT is a voltage controlled
device

Transfer Characteristic of an IGBT
 The transfer characteristic of an IGBT is a plot of collector current IC versus gate-emitter voltage VGE as
shown in Figure below .
 When VGE is less than the threshold voltage VGET IGBT is in the off-state.

Switching Characteristics
 Switching characteristics of an IGBT during turn-on and turn-off are sketched as shown in previous slide.
 The turn-on time is defined as the time between the instance of forward blocking to forward on-state.
 Turn-on time is composed of delay time tdn and rise time tr. i.e. ton = tdn + tr.
 The delay time is defined as the time for the collector-emitter voltage to fall from VCE to 0.9VCE.
 Time tdn may also be defined as the time for the collector current to rise from its initial leakage current IC to
0.1Ic.

 The rise time tr is the time during which collector-emitter voltage falls from 0.9 VCE to 0.1VCE.
 It is also defined as the time for the collector current to rise from 0.1Ic to its final value Ic.
 After time ton the collector current is Ic and the collector-emitter voltage falls to small value called
conduction drop =VCES.
 The turn-off time consists of three intervals: (i ) delay time tdf (ii ) initial fall time tf1 and (iii) final fall
time tf2 ; i. e. toff=tdf+ tf1 + tf2.
 The delay time is the time during which gate voltage falls from VGE to thresh old voltage VGET.
 As VGE falls to VGET during tdf, the collector current falls from IC to 0.9 IC.

 At the end of tdf, collector-emitter voltage begins to rise.
 The first fall time tfl is defined as the time during which collect or current falls from 90 to 20% of its initial
value Ic, or the time during which collector -emitter voltage rises from VCEs to 0. 1VCE
 The final fall time tf2 is the time during which collector current falls from 20 to 10% of Ic, or the time during
which collector-emitter voltage rises from 0.1 VCE t o final value VCE.
 IGBT widely used in medium power applications such as DC and AC motor drives, UPS systems, Power
supplies for solenoids, relays and contractors.
 IGBT’s are more expensive than BJT’s, they have lower gate drive requirements, lower switching losses.
The ratings up to 1200V, 500A.

2.3.3. THYRISTORS
 A thyristor is the most important type of power semiconductor devices. They are extensively used in power
electronic circuits. They are operated as bi-stable switches from non-conducting to conducting state.
 A thyristor is a four layer, semiconductor of p-n-p-n structure with three p-n junctions. It has three terminals,
the anode, cathode and the gate.
 The word thyristor is coined from thyratron and transistor. It was invented in the year 1957 at Bell Labs.
 The Different types of Thyristors are
Silicon Controlled Rectifier (SCR).
TRIAC and DIAC
Gate Turn Off Thyristor (GTO)

a. Silicon Controlled Rectifier (SCR)
Circuit symbol of SCR Basic Structure of a generic thyristor
 The construction of SCR shows that the gate terminal is kept nearer the cathode.
 The approximate thickness of each layer and doping densities are as indicated in the figure.
 In terms of their lateral dimensions Thyristors are the largest semiconductor devices made.
 It handles high current and high voltage with a better switching speed and improved breakdown voltage

i. Operation principles
 When the anode is made positive with respect the cathode, and no gate signal, junctions J1 & J3 are
forward biased and junction J2 is reverse biased this is called forward blocking state.
 With anode to cathode voltage VAK being small, only leakage current flows through the device. The SCR
is then said to be in the forward blocking state.
 If VAK is further increased to a large value, the reverse biased junction J2 will breakdown due to avalanche
effect resulting in a large current through the device.
 The voltage at which this phenomenon occurs is called the forward breakdown voltage VBO.
 With reverse bias, i.e. cathode positive with respect to the anode, J 2 is forward-biased and J1 and J3 are
reverse-biased this is called reverse blocking state. Again only leakage current flows.
 Once the SCR is switched on, the voltage drop across it is very small, typically 1 to 1.5V.
 The anode current is limited only by the external impedance present in the circuit.
 In practice, the forward voltage is maintained well below VBO and the SCR is turned on by applying a
positive voltage between gate and cathode.
 With reverse bias, i.e. cathode positive with respect to the anode, J2 is forward-biased and J1 and J3 are
reverse-biased. Again only leakage current flows.

ii. V-I Characteristics of SCR
SCR gate circuit
SCR V-I Characteristics

 A typical V-I characteristics of a thyristor is shown in pervious slide.
 In the reverse direction the thyristor appears similar to a reverse biased diode which conducts very little
current until avalanche breakdown occurs.
 The low current high voltage region is the forward blocking state or the off state and the low voltage high
current mode is the on state.
 For the forward blocking state the quantity of interest is the forward blocking voltage VBO which is defined
for zero gate current.

iii. SCR Operating Modes
There are three operating modes of SCR
 Forward blocking mode: only leakage current flows, so the thyristor is not conducting.
 Forward conducting Mode: large forward current flows through thyristor.
 Reverse blocking mode: when cathode voltage is increased to reverse breakdown voltage. Avalanche
breakdown occurs and large current flows.

iv. Important Terms
a. Latching current (IL): this is the minimum anode current required to maintain the thyristor in the on-state
immediately after a thyristor has been turned on and the gate signal has been removed.
If a gate current greater than the threshold gate current is applied until the anode current is greater than
the latching current IL then the thyristor will be turned on or triggered.
b. Holding current(IH): this is the minimum anode current required to maintain the thyristor in the off-state.
To turn off a thyristor, the forward anode current must be reduced below its holding current.
c. Reverse current (IR): is the current flow through the device under reverse blocking state.
d. Forward break over voltage (VBO): is the voltage at zero gate current.

v. SCR Switching Characteristics
 It is called dynamic characteristics or on-off characteristics of SCR.
 The switching characteristics are very important to defines the device velocity in changing from conduction
state to blocking state and vice versa.
 Losses occurred in the device during this situation, it is called switching losses.
 At high frequency, the switching losses are more.

SCR Turn-on time
 A forward biased thyristor can be turned on by applying a positive voltage between gate and cathode terminal.
 But it takes some transition time to go from forward blocking mode to forward conduction mode.
 This transition time is called turn of time of SCR and it can be subdivided into three small intervals as delay
time (td) rise time(tr), spread time (ts).
 Rise time inversely proportional to magnitude of gate current and its build up rate . Thus rise time can be
reduced if high and step pulses are applied to gate terminal. It is the time between the anode current to
increase from 10% to 90% of its maximum value, or it is the time taken by the anode voltage to fall from 90%
to 10% of its maximum value.

 The time taken from anode current to reach 0.1Ia is called delay time (td), or it is the time interval between
maximum anode voltage and 90% of maximum anode voltage.
 The time taken by the anode current to rise from 0.9Ia to maximum value of anode current is called spread
time (ts).
 During this time the conduction spreads over the entire cross-section of cathode and so electrons spread over
all the junctions.
 The switching on times of SCR is
𝑡𝑜𝑛 = 𝑡𝑑 + 𝑡𝑟 + 𝑡𝑠


Turn-off time of SCR
 Turning off SCR bringing the SCR from conducting state to blocking state.
 To turn-off SCR two things are to be done.
i. Reduce the anode current below its holding current level
ii.Application of reverse voltage.
 The turn-off time is defined as a time from the instant the anode current becomes zero to the instant SCR
reaches its forward blocking ability.
 Turn off time 𝑡𝑜𝑓𝑓 = 𝑡𝑟𝑟 + 𝑡𝑔𝑟 , where, 𝑡𝑟𝑟 =Reverse recovery time
𝑡𝑔𝑟 = gate recovery time

SCR Turn-On Methods
 SCR turn-on methods is known as Triggering.
 With anode is positive with respect to cathode, an SCR can be turned on by any one of the following
techniques..
i. Forward voltage triggering
ii.Gate triggering
iii.dv/dt triggering
iv.Temperature triggering
v.Light triggering

b. Bi-directional Thyristors (TRIAC and DIAC)
 The Bi directional Thyristor is an integrated assembly of two anti-parallel thyristor.
 The intended applications for this switch are VAR compensators, static switches, soft starters and motor
drives. These devices are rated up to 6.5 kV blocking.
 A simplified cross section of a diac and triac is shown next slide.
 A positive voltage applied to the anode with respect to the cathode forward biases J 1, while reverse biasing J2.
J4 and J3 are shorted by the metal contacts.
 When J2 is biased to breakdown, a lateral current flows in the p2 region. This lateral flow forward biases the
edge of J3, causing carrier injection.

Structure of TRIAC
Structure and characteristics of DIAC
 Triac is a bidirectional triode thyristor.
 Diac is a bidirectional diode thyristor.
 It can turned on for both polarity of voltage.
 It can turned on for both polarity of voltage.
 It is semi-controlled three terminal switching device
 It is uncontrolled two terminal switching device
 they used in control circuits and high power lamp
 It used in Heat control circuits and starter
switching.
circuits of fluorescent lamps

c. Gate Turn-Off (GTO)
Basic structure of GTO

Symbol of Gate Turn-Off (GTO) V-I Characteristics of GTO

 A gate turn off thyristor is a p-n-p-n device with anode (A): cathode (K) and gate (G).
 It is a three terminal, four layer devices.
 It is a special type of thyristor and it is an active semi-conductor devices
 GTO has a high voltage blocking capability and high over current capability.
 In which it can be turned ON like an ordinary SCR by a positive gate current Ig at its, gate cathode terminals.
 However it can be easily turned off by a negative gate current signal of appropriate magnitude.
 GTO is a fully controllable switch which can be turn on and off by gate signal. Where as conventional
thyristor can be turned on not turn off by gate signal.
 Self-turn off capability of GTO makes it the most suitable device for inverter and chopper applications.

Static V-I Characteristics
 The static I-V characteristics of a GTO is identical with that of a SCR.
 However, the latching current of a GTO is considerably higher than an SCR similar rating.
 The forward leakage current is also considerably higher.
 Noted that a GTO can block rated forward voltage only when the gate is negatively biased with respect to the
cathode during forward blocking state.
 In the reverse mode, reverse-voltage blocking capability of GTO is low, typically 20 to 30 V, because of
(i)anode shorts and
(ii)large doping densities on both sides of reverse blocking junction J3,

 Dynamic V-I characteristics of GTO
GTOs basic gate drive circuit GTO switching characteristics

 The switching-characteristics of a GTO is called dynamic characteristics.
Gate turn-on time: the gate turn on characteristics is similar to a thyristor. Total turn on time consists of delay
time, rise time, spread time.
 The turn on time can be reduced by increasing its forward gate current.
 Turn-on time in a GTO can be decreased by increasing its forward gate current as in a thyristor.
Gate turn-off. The turn-off characteristics of a GTO are different from those of an SCR. Before the initiation of
turn-off process, a GTO carries a steady current Ia
The total turn-off time tq is subdivided into three different periods; namely the storage period (ts) the fall
period (tf) and the tail period (tt ). In other words, 𝑡𝑞 = 𝑡𝑠 + 𝑡𝑓 + 𝑡𝑡

Important Terms on GTOs
 Storage times:During the storage, the anode voltage and current remains constant. The gate current rises
depending upon the gate circuit impedance and gate applied voltage. It is the time interval between the gate
current becomes negative and reaches maximum reverse gate current.
 Fall time: After ts, anode current begins to fall rapidly and anode voltage starts rising. After falling to a certain
value, then anode current changes its rate to fall. this time is called fall time.
 Spike in Voltage: During the time of storage and fall time there is change in voltage due to abrupt current
change.
 Tail Time: During this time ,the anode current and voltage continues towards the turn off values. The transient
overshoot is due to the snubber parameter and voltage stabilizes to steady state value.

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CHAPTER TWO

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering| Gashaye G.

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

 Advances in power Electronics is primarily due to the advances in semi-conductor

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

2.3.1. Power Diodes

P-N Junction of Diode Diode symbol

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

 When reverse biased, a small reverse current known as

V-I characteristics of Diode

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

rapidly and it is also called Knee Voltage

bias mode, in repeated pulses.

rating of 50V to 3000V or more.

transient that occurs during the time diode recovers.

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

Symbol of n-channel type MOSFET

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

Basic Structure of n-channel type MOSFET

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

N-channel MOSFET circuit diagram

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

N-channel MOSFET Transfer Characteristics

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

Output characteristics of a Power MOSFET

Switching characteristics of a Power MOSFET

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

drive the MOSFET in to on state.

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

gate voltage V1 to VGSP.

 During tf drain current falls from ID to zero.

 They are available with 500V and 140A rating at present.

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

 IGBT is a three terminal (Collector, emitter and gate) switching devices.

 Further IGBT is free from second breakdown problem present in BJT.

injection layer which is p+ unlike n+ substrate in power MOSFET.

 The basic structure of the N-channel IGBT is shown next slide

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

IGBT Circuit Symbol

IGBT Basic Structure

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

substrate called collector C.

 The n- layer is called drift region.

 The p layer is called body of IGBT.

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

 Rd is resistance offered by n- drift region

 Rby is the resistance offered by p region to the flow of hole current Ih

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

reverse biased; so no current flows from collector to emitter.

beneath the gate.

19-Apr-22 ECEg |Year V Semester I |Biomedical Engineering | Gashaye G.

 Current IC, or IE, consists of two current components:

Rby and emitter

channel resistance Rch, n+ and emitter.