2SK3673-01MR 200304

FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET

Super FAP-G Series Outline Drawings [mm]
Features TO-220F
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof

Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Ratings Unit
Drain-source voltage V DS 700 V
VDSX *5 700 V
Continuous drain current ID ±10 A
Pulsed drain current ID(puls] ±40 A Equivalent circuit schematic
Gate-source voltage VGS ±30 V
Repetitive or non-repetitive IAR *2 10 A
Drain(D)
Maximum Avalanche Energy EAS *1 242.2 mJ
Maximum Drain-Source dV/dt dVDS/dt *4 40 kV/µs
Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs
Max. power dissipation PD Ta=25°C 2.16 W
Tc=25°C 80 Gate(G)
Operating and storage Tch +150 °C Source(S)
temperature range Tstg -55 to +150 °C
Isolation Voltage Viso *6 2 kVrms
<
*1 L=4.45mH, Vcc=70V,Tch=25°C, See to Avalanche Energy Graph *2 Tch=150°C
< < < <
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C *4 VDS =700V *5 VGS=-30V *6 t=60sec, f=60Hz

Electrical characteristics (Tc =25°C unless otherwise specified)

Item Symbol Test Conditions Min. Typ. Max. Units
Drain-source breakdown voltaget V(BR)DSS ID=250µA VGS=0V 700 V
Gate threshold voltage VGS(th) ID= 250µA VDS=VGS 3.0 5.0 V
VDS=700V VGS=0V Tch=25°C 25 µA
Zero gate voltage drain current IDSS
VDS=560V VGS=0V Tch=125°C 250
Gate-source leakage current IGSS VGS=±30V VDS=0V 100 nA
Drain-source on-state resistance RDS(on) ID=5A VGS=10V 0.91 1.18 Ω
Forward transcondutance gfs ID=5A VDS=25V 5 9.5 S
Input capacitance Ciss VDS =25V 900 1350 pF
Output capacitance Coss VGS=0V 140 210
Reverse transfer capacitance Crss f=1MHz 8 12
Turn-on time ton td(on) VCC=300V ID=5A 22 33 ns
tr VGS=10V 6 9
Turn-off time toff td(off) RGS=10 Ω 40 60
tf 9 14
Total Gate Charge QG VCC =350V 25 37.5 nC
Gate-Source Charge QGS ID=10A 4 6
Gate-Drain Charge QGD VGS=10V 8.5 13
Avalanche capability IAV L=4.45mH Tch=25°C 10 A
Diode forward on-voltage V SD IF=10A VGS=0V Tch=25°C 0.90 1.50 V
Reverse recovery time t rr IF=10A VGS=0V 2.75 µs
Reverse recovery charge Qrr -di/dt=100A/µs Tch=25°C 14.0 µC

Thermalcharacteristics
Item Symbol Test Conditions Min. Typ. Max. Units
Rth(ch-c) channel to case 1.563 °C/W
Thermal resistance
Rth(ch-a) channel to ambient 58.0 °C/W
1
2SK3673-01MR FUJI POWER MOSFET
Characteristics

Allowable Power Dissipation Typical Output Characteristics

120
PD=f(Tc) 16
ID=f(VDS):80 µs pulse test,Tch=25°C
20V 10V
8.0V
100
7.0V
12

80 6.5V

ID [A]
PD [W]

60 8

40 6.0V

20
VGS=5.5V

0 0
0 25 50 75 100 125 150 0 5 10 15 20 25

Tc [°C] VDS [V]

Typical Transfer Characteristic Typical Transconductance

ID=f(VGS):80 µ s pulse test,VDS=25V,Tch=25°C 100
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C

10
ID[A]

10
gfs [S]

1
0.1

0 1 2 3 4 5 6 7 8 9 10 0.1 1 10

VGS[V] ID [A]

Typical Drain-Source on-state Resistance Drain-Source On-state Resistance

RDS(on)=f(ID):80 µs pulse test,Tch=25°C RDS(on)=f(Tch):ID=5A,VGS=10V
2.00 4.0
VGS=5.5V 6.0V
6.5V
3.5

1.75
3.0
RDS(on) [ Ω ]

RDS(on) [ Ω ]

2.5
1.50
7.0V
8.0V
2.0
10V
max.
20V
1.25 1.5
typ.

1.0
1.00
0.5

0.75 0.0
0 4 8 12 16 -50 -25 0 25 50 75 100 125 150

ID [A] Tch [°C]

2
2SK3673-01MR FUJI POWER MOSFET

Gate Threshold Voltage vs. Tch Typical Gate Charge Characteristics

VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS=f(Qg):ID=10A,Tch=25°C
7.0 12

6.5

6.0
10 Vcc= 140V
5.5 350V
5.0 max. 560V
8
4.5
VGS(th) [V]

4.0

VGS [V]
3.5 6

3.0 min.
2.5
4
2.0

1.5
2
1.0

0.5

0.0 0
-50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30

Tch [°C] Qg [nC]

Typical Capacitance Typical Forward Characteristics of Reverse Diode

1
C=f(VDS):VGS=0V,f=1MHz 100
IF=f(VSD):80 µs pulse test,Tch=25°C
10

Ciss
0
10

10
IF [A]
C [nF]

-1
10
Coss

-2
10

Crss

-3 0.1
10
10
0
10
1
10
2 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00

VDS [V] VSD [V]

Typical Switching Characteristics vs. ID Maximum Avalanche Energy vs. starting Tch
3 t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω E(AS)=f(starting Tch):Vcc=70V
10 700

IAS=4A
600

tf
500
2
10
IAS=6A
td(off) 400
EAS [mJ]
t [ns]

300
td(on)
IAS=10A
1
10
tr 200

100

0
10 0
-1 0 1
10 10 10 0 25 50 75 100 125 150

ID [A] starting Tch [°C]

3
2SK3673-01MR FUJI POWER MOSFET

Maximum Avalanche Current Pulsewidth

IAV=f(tAV):starting Tch=25°C,Vcc=70V
2
10
Avalanche Current I AV [A]

Single Pulse
1
10

0
10

-1
10

-2
10
-8 -7 -6 -5 -4 -3 -2
10 10 10 10 10 10 10

tAV [sec]

Maximum Transient Thermal Impedance

1
Zth(ch-c)=f(t):D=0
10

0
10
Zth(ch-c) [ °C/W]

-1
10

-2
10

-3
10
-6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 10
t [sec]

http://www.fujielectric.co.jp/denshi/scd/