EHB 442E HW#2

Due: 5 October 2017 @9:30 am – No late homework will be accepted.

1) Find the approximate binding energy for GaN having the following specifications 𝜖𝑟 = 9.7
and 𝑚𝑛∗ = 0.13𝑚0.

2) A semiconductor has an electron band structure 𝐸(𝑘) = (4𝑘 2 + 5) 𝑒𝑉 where 𝑘 has the units
of Å. Calculate the effective mass of the electrons.

3) Derive an expression for the intrinsic Fermi level in terms of the conduction band energy (𝐸𝑐 ),
valence band energy (𝐸𝑣 ), and electron and hole effective masses (𝑚𝑛∗ and 𝑚𝑝∗ ).

4) A hypothetical semiconductor has an intrinsic concentration of 1 × 1012 𝑐𝑚−3 at 300 K; it has

conduction and valence band effective densities of states 𝑁𝐶 and 𝑁𝑉 both equal to 1 ×
1020 𝑐𝑚−3.
a. What is the bandgap 𝐸𝑔 ?
b. If the semiconductor is doped with 𝑁𝐷 = 1 × 1017 donors/𝑐𝑚3, what are the
equilibrium electron and hole concentrations at 300K?
c. If the same piece of semiconductor, already having 𝑁𝐷 = 1 × 1017 donors/𝑐𝑚3, is also
doped with 𝑁𝐴 = 2 × 1017 donors/𝑐𝑚3, what are the new equilibrium electron and
hole concentrations at 300 K?
d. Consistent with the answer to part (c), what is the Fermi level position with respect to
the intrinsic Fermi level 𝐸𝐹 − 𝐸𝑖 ?

5) Consider a Si bar with width of 0.02 cm, thickness of 8 µm, and length of 0.6 cm. In a Hall Effect
measurement, magnetic field generated at z-direction is 𝐵𝑧 = 10 𝑊𝑏/𝑐𝑚2 and the current
flowing is 0.8 mA. If 𝑉𝐻𝑎𝑙𝑙 = 1 𝑚𝑉 and 𝑉𝑎𝑝𝑝 = 50 𝑚𝑉, then find the type, concentration, and
mobility of the majority carriers.