28/03/2023 Experiment No.

9
Aim: To design and simulate CMOS NAND and NOR using Symica Tool.
Software Used: Symica Simulator.

Theory:
The basic structure of a Complementary Metal oxide semiconductor inverter consists of an
n-MOS transistor and p-MOS transistor as a load and the gates of the two transistors are
shorted at the input and the drains of the two transistors are also shorted where the output is
obtained.
NAND denotes NOT-AND. a CMOS two-input NAND gate. P-channel transistors Q1 and Q2
are connected in parallel between +V and the output terminal. N-channel transistors Q3 and
Q4 are connected in series between the output terminal and ground.
a CMOS two-input NOR gate. P-channel transistors Q1 and Q2 are connected in series
between +V and the output terminal. N-channel transistors Q3 and Q4 are connected in
parallel between the output and ground.

Truth Table of NAND and NOR Gate:

Circuit Diagram of NAND:

Circuit Diagram of NOR Gate:

Circuit Diagram of NAND Gate:

Circuit Diagram of NOR Gate:

Output waveform:
NAND output:

NOR output:

Result: NAND and NOR Gate has been implement using CMOS on simulator.