MEMS fabrication techniques involve layered processes that create structures on thin silicon substrates using methods adapted from integrated circuit fabrication. These include depositing layers like silicon dioxide, patterning using photolithography, and selectively etching layers or the substrate to leave the desired structure. Common fabrication methods are bulk micromachining, which etches the substrate itself, and surface micromachining, which builds the structure on top of the substrate using sacrificial layers that are eventually removed.
MEMS fabrication techniques involve layered processes that create structures on thin silicon substrates using methods adapted from integrated circuit fabrication. These include depositing layers like silicon dioxide, patterning using photolithography, and selectively etching layers or the substrate to leave the desired structure. Common fabrication methods are bulk micromachining, which etches the substrate itself, and surface micromachining, which builds the structure on top of the substrate using sacrificial layers that are eventually removed.
MEMS fabrication techniques involve layered processes that create structures on thin silicon substrates using methods adapted from integrated circuit fabrication. These include depositing layers like silicon dioxide, patterning using photolithography, and selectively etching layers or the substrate to leave the desired structure. Common fabrication methods are bulk micromachining, which etches the substrate itself, and surface micromachining, which builds the structure on top of the substrate using sacrificial layers that are eventually removed.
techniques borrowed and adapted from integrated circuit (IC) fabrication and semiconductor processing.
• Such techniques create structures on thin, flat
substrates (usually silicon) in a series of layered processes.
Prepared by: L.Sathish Kumar, AP, ECE,
48 SCSVMV UNIVERSITY. Example: MEMS Pressure Sensor BULK MICROMACHINING • Start with a thin silicon substrate, called a wafer, typically measuring 200-400 µm thick.
• Then a thin layer of silicon dioxide (SiO2) is
then “grown” on the wafer.
Prepared by: L.Sathish Kumar, AP, ECE,
49 SCSVMV UNIVERSITY. • Next, a thin layer of photosensitive material called photoresist, or simply resist, is deposited on the SiO2 layer in a process called spinning.
• Then a transparent plate with selective
opaque regions called a mask is then brought in close proximity to the wafer.
Prepared by: L.Sathish Kumar, AP, ECE,
50 SCSVMV UNIVERSITY. • On the regions of the photoresist that make contact with the UV light, the resist undergoes a photochemical process in which it hardens and becomes less soluble.
{This is true for a negative resist. If a positive resist were used, then the exposed regions would become more soluble}
• The unexposed resist is removed by using a chemical
called a developer, leaving a portion of the SiO2 layer exposed.
Prepared by: L.Sathish Kumar, AP, ECE,
51 SCSVMV UNIVERSITY. • The result is a window through the resist to the SiO2. This exposed region is then chemically etched with buffered hydrofluoric (HF) acid.
• The presence of the photoresist on certain
regions, however, protects the SiO2 beneath it from being etched.
• Another chemical process, the remaining
photoresist is stripped from the wafer leaving the patterned SiO2. Prepared by: L.Sathish Kumar, AP, ECE, 52 SCSVMV UNIVERSITY. • The substrate itself is now etched using a potassium hydroxide (KOH) solution.
• Unlike the previous etching process, however, the
KOH-Si reaction proceeds at different rates in different spatial directions due to the crystalline structure of the silicon substrate and its orientation.
• Such a direction dependent etching process is
known as anisotropic etching. Prepared by: L.Sathish Kumar, AP, ECE, 53 SCSVMV UNIVERSITY. STEPS IN A TYPICAL BULK MICROMACHINING PROCESS
Prepared by: L.Sathish Kumar, AP, ECE,
54 SCSVMV UNIVERSITY. • In bulk micromachining the substrate itself becomes part of the structure for the MEMS device.
• In another technique called surface
micromachining, the structure of the MEMS consists of layers of material built on top of the substrate.
Prepared by: L.Sathish Kumar, AP, ECE,
55 SCSVMV UNIVERSITY. SURFACE MICROMACHINING • First, a polymer known as polyimide is selectively deposited on the silicon substrate.
• The polyimide itself will not form any
structural part of the cantilever, but rather is a temporary layer used to build around.
Prepared by: L.Sathish Kumar, AP, ECE,
56 SCSVMV UNIVERSITY. • Such a temporary layer is called a sacrificial layer.
• Next a thin film of aluminum is deposited via physical
vapor deposition (PVD) on the sacrificial layer.
• The polyimide is then chemically removed in a
process called release.
Prepared by: L.Sathish Kumar, AP, ECE,
57 SCSVMV UNIVERSITY. STEPS IN A TYPICAL SURFACE MICROMACHINING PROCESS
Prepared by: L.Sathish Kumar, AP, ECE,
58 SCSVMV UNIVERSITY. Micro-fabrication process • Si Wafer Fabrication • IC fabrication Deposition Spin coating PVD – Physical Vapor Deposition CVD – Chemical Vapor Deposition Lithography (Pattern transfer) Removal (Mostly etching process) Wet / Dry etching Plasma etching Prepared by: L.Sathish Kumar, AP, ECE, 59 SCSVMV UNIVERSITY. • One of the most important techniques employed in microfabrication is the addition of a thin layer of material to an underlying layer.
• Additive techniques include those occurring
via chemical reaction with an existing layer.
• The addition of impurities to a material in
order to alter its properties, a practice known as doping. Prepared by: L.Sathish Kumar, AP, ECE, 60 SCSVMV UNIVERSITY. Silicon substrate • In MEMS and microfabrication we start with a thin, flat piece of material onto which (or into which – or both!) we create structures.
• This thin, flat piece of material is known as the
substrate, the most common of which in MEMS is crystalline silicon.
• Silicon’s physical and chemical properties make it
a versatile material in accomplishing structural, mechanical and electrical tasks in the fabrication of a MEMS. Prepared by: L.Sathish Kumar, AP, ECE, 61 SCSVMV UNIVERSITY.