Muhammad Hassan Javed

379250
BEE-13-D
EDC Assignment
Statement: As a process engineer, you are given a task to dope an intrinsic silicon film with
phosphorous atoms at room temperature until its resistivity reduces from ~105 Ω.cm to only few
~Ω.cm. (a) Show using a plot that how the concentration of holes and electrons in the silicon
varies as a function of the concentration of the donar atoms. Moreover, (b) show using 2 nd plot
that how the resistivity of the silicon varies as a function of the concentration of the donor atoms.
Additionally, (c) show using 3 rd plot that how the current through the silicon film varies as a
function of the concentration of the donor atoms when applied 1V across it. Add/draw
comparisons to intrinsic silicon in each plot
(a) The concentration charge carriers in extrinsic silicon is approximately equal to the
concentration of donor impurities. The number of majority charge carriers n which will
be in this case will be equal to the concentration of donor impurities Nd plus the Ni:
n=Nd +ni
The number of minority charge carriers p which will be holes in this case will be given
by:
p = (ni)2/(Nd +ni)
(b) The resistivity has the following relationship with the donor impurities:
ρ = 1/q(nμn+pμp)
 where q is the elementary charge on an electron or charge carries equal to 1.6×10-19c and
μn is the electron mobility equal to 1350 cm2/V·s
(c) The current has the following relationship with the donor impurities:
I = q (nμn+pμp)VA
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