Physics laws 2nd term 2017

Pysics laws
1- B =µ x NI/L ( solenoid )
or B =µ x n I as n is the number of coil turns per unit length
2 – B = µ X NI/2r ( in center of loop)
3 – B= µ x I/2 π d( at distance from a straight wire)
4 – the force acting on straight wire carrying current and exist in
magnetic field
F = BIL sin Ɵ ( Ɵ is the angle between the wire and the field
lines)
• the force acting on a charge moving in magnetic field
F = B q v sin Ɵ

5 – Magnetic torque
(Ʈ) = N B A I sin Ɵ
(Ɵ is the angle between the field lines and perpendicular to
the coil ) (maximum when the coil is parallel to the field lines
and zero in perpendicular position)
6 – faraday's law e.m.f = - N ∆Ø)/ ∆ t
= - NA (∆ B)/∆t
∆Ø = Ø2- Ø1
- If the coil was perpendicular to the magnetic field then turned by
900 ( 1/4 cycle)

∆ B= B2 – B1 = 0- B = - B
- If the coil was perpendicular to the magnetic field then turned by
1800 ( 1/2 cycle)

∆ B= B2 – B1 =-B - B = -2 B
7 – e.m.f induced in straight wire moving in magnetic field
e.m.f = - B L V sin Ɵ (Ɵ is the angle between the direction of
motion and the field lines)
Ø = B A cos Ɵ (Ɵ is the angle between the perpendicular to
the coil and the field lines)
8 – induced current I = induced e.m.f / Resistance of the coil
9 – Mutual induction e.m.f = - M∆I2/ ∆ t = - N ∆Ø/ ∆ t
= - NA (∆ B)/∆t
M = e.m.f2 x ∆ t /∆I2
10 – Self induction e.m.f = - L ∆I/ ∆ t = - N ∆Ø/ ∆ t
= - NA (∆ B)/∆t
Inductnce L = e.m.f x ∆ t /∆I
unit of inductance Henery or V .sec/A.
11 – instantaneous e.m.f in dynamo = NBA ω sin Ɵ
Ɵ = ωt =( 2 πf) t
f is frequency = 1/periodic timeT = no. of cycles/time in sec.
12 -Maximum e.m.f = NBA ω ( when the coil is parallel to the field)
And e.m.f = o in perpendicular position
13 - instantaneous e.m.f in dynamo = e.m.fmax. sin Ɵ
= e.m.fmax. sin ωt
= e.m.fmax. sin ( 2 πf) t
14 – Average e.m.f during any period calculated from faraday's law
- During one cycle average = o
- During 1/4 cycle average = During 1/2 cycle average = - 4 NBAf

15 – Effective value of e.m.f = 1/√𝟐 e.m.f max.= 0.707 e.m.f max

16 – Effective value of AC current

Ieff.(Ir.m.s) = 1/√𝟐 I max.= 0.707 I max
17 – Number of times that the AC current reach maximum in
one second = 2f
Number of times that the AC current reach zero in one
second = 2f + 1
18 – In the ideal transformer
Ns/Np = VslVp = Ip/Is
𝑽𝒔𝑰𝒔 𝑽𝒔𝑵𝒑
In the real transformer effencency η=𝑽𝒑𝑰𝒑 x100 % = 𝑽𝒑𝑵𝒔 x100 %

The lost power in the transferring wires = I2R

the power at the consumer area = the power at the production
station – lost power
The drop in voltage through the transferring wires = IR (R is
resistance of the wires)

The measuring devices

 Sensitivity of galvanometer9(((((((
is the scale deflection per unit current intensity passes
through its coil. = ɵ/I (rad./A)
 Knowing the sensitivity and the number of divisions
of the scale:
 Current intensity =Sensitivity for each division x number of divisions.

Shunt resistance
𝑰𝒈 𝑹 𝒈
𝑹𝑺 =
𝑰 − 𝑰𝒈

𝐈𝐠 𝐑𝐒
Sensetivity of ammeter = 𝐈
=𝐑
𝐠 +𝐑 𝐒

Multiplier resistance in voltmeter

𝐕 − 𝐈𝐠 𝐑 𝐠
𝐑 𝐦=
𝐈𝐠
Sensetivity of voltmeter
𝑽𝒈 𝑹𝒈
𝑺𝒆𝒏𝒔𝒊𝒕𝒊𝒗𝒊𝒕𝒚 𝒐𝒇 𝒗𝒐𝒍𝒕𝒎𝒆𝒕𝒆𝒓 = =
𝑽 𝑹𝒈 + 𝑹𝒎

Ohmmeter
Standerd resistance in the device 𝑹𝒅𝒆𝒗𝒊𝒄𝒆 = 𝑰𝑽𝑩
𝒎𝒂𝒙

This resistance when the terminals of the device touched without external
resistance
𝑽
To find the value of the unknown resistance 𝑹𝒕𝒐𝒕𝒂𝒍 = 𝑰 𝑩

𝑹𝒖𝒏𝒌𝒏𝒐𝒘𝒏. = 𝑹𝒕𝒐𝒕𝒂𝒍 − 𝑹𝒅𝒆𝒗𝒊𝒄𝒆

Inductance of inductor L= =

N number of turns
n number of turns per unit length
A cross sectional area
V volume

length of inductor

Semiconductors
Law of mass action n p = ni2 (ni is the concentration of free electons or
holes in the pure crystal)
In the N- type crystal
The dopped atoms are considered doners
n= p + ND - n is the concentration of free electons
- p is the concentration of the holes
- ND is the concentration of the donor impurities

For simplicity
n = ND p = ni2 / ND
P-Type crystal
The dopped atoms are considered acceptors
p =n + NA - n is the concentration of free electons
- p is the concentration of the holes
- NA is the concentration of the acceptor impurities

For simplicity
p = NA n = ni2 / NA

Transistor
Current amplification (αe)
The current amplification is the ratio between the collector current to
emitter current.

𝐈𝐂
∝𝐞 =
𝐈𝐄

Then the portion lost in the base by recombination with holes is: IB=IE-IC

∵ 𝐈𝐂 = 𝛂𝐞 𝐈𝐄
∴ 𝑰 𝑩 = ( 𝟏 − 𝜶𝒆 ) 𝑰 𝑬

The current gain(βe)

The ratio between the collector current to the base current.
𝑰𝑪 𝜶𝒆 𝑰𝑬 𝜶𝒆
𝜷𝒆 = = =
𝑰𝑩 (𝑰 − 𝜶𝒆 )𝑰𝑬 𝟏 − 𝜶𝒆
VCC=VCE+ICRC
 RC ICRC
B VCC

RB
VCE(out)

A transistor as a switch in (ON)

condition, VCE small value, IC large value
and ICRC large value

RC ICRC
B VCC

RB
VCE(out)

A transistor as a switch in (Off)

condition, VCE Large value, IC≈0

1- The electrons and holes concentration per cm 3 in pure silicon is

1010, the concentration of added (Al) is 1012/cm3, calculate the
concentration of electrons & holes in this case. [n=1012, p=104]
2- In a silicon transistor, a change of 7.89mA in the emitter current
produced a change of 7.8mA in the collector, what change in the
base current is necessary to produce an equivalent change in the
collector current? [0.09mA]
3- The base current in a transistor is (0.05mA) and emitter current
20x10-3A, find:
1- The collector current.
[19.5x10-3A] 2-The
current gain. [399]
4- In a transistor ΔIB=25μA and the collector current changes from
(2.42mA) to (3.58mA), find the current gain. [46.4]
5- In a transistor circuit, the base current is (30μA) corresponds to a
collector current of (6.5mA), find the value of:
1-The current gain
2-The emitter current.
3- The current amplification.