Experiment No.

01
characteristics
V-I
Study of P-N Junction

V-I Characteristics ofaP-iv

the Forward and Reverse bias
ALM: 1) T6 observe and draw
Junction diode. Bias Co nditions.
in forward and
reverse

dynamic resistance
"1o calculate static and

APPARATUS:

their specifications
Table 1: List of items/components required and

Sl no Component Specs Qnty

1 Resistor 1KN
(0-20mA) 1
2 Ammeter
1
3 Ammeter (0-200A)
(0-20V) 1
Voltmeter
1
5 Regulated Power Supply| (0-30V)
1
6 Bread board

7 Connecting wire

THEORYY:

A P-N junction diode conducts only in one direction. The V-I characteristics of the diode
are curves between voltage across the diode and current fowing through the diode. When
external voltage is zero, circuit is open and the potential barrier does not allow the current
to flow. Therefore, the circuit current is zero. When P-type (Anode) is connected to +ve
terminal and N-type (cathode) is connected to ve terminal of the supply voltage, the diode
is forward biased.

The potential barrier is reduced when the diode is in the forward biased condition. At
sorme forward voltage, the potential barrier altogether gets eliminated and current starts
fowing through the diode and also in the circuit. Then diode is said to be in ON state.
The current increases with increasing forward voltage.

When N-type (cathode) is connected to +ve terminal and P-type (Anode) is connected ve
terminal of the supply voltage, the diode is reverse biased and the potential barrier across
the junction increases. Therefore, the junction resistance becomes very high and a verv

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 ) flows in the
circuit.
Then
diode is saidt

current) carriers.
minority charge
saturation

small current
(reverse
biakpurrent
is due to
OFF state Thereverse
CIRCUIT DIAGRAM:

is Forward Biased:
Diode

D1
IN4007 + I
A

(0-20mA)
Ri = 1KN

RPS
(0-30V)
(0 20V)

Figure 1: Circuit diagram of forward biased diode

Diode is Reverse Biased:

D1
IN4007

(0-200tuA)
RPS Ri =1K2
(0-30V)7T + V
(0 20V)

Figure 2: Circuit diagram of reverse biased diode

PROCEDURE:

Connect the ckt. as shown in figure.

.Switch on the power supply.

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de
is
said t

Forward Bias
p(mA)

Break down
Voltage v (Volts)
Knee Voltage

Reverse Bias

L(uA)
V-I characteristics of p-n junction diode
Figure 3: Typical

Dynamic Resistance, Rp =
AV;/Al1 =

(B In reverse bias condition:

Static Resistance, Rs =
V-/I, =

Dynamic Resistance, Rp =
AV/AI, =

QUSTIONS:

i) Is the V-I relationship of a diode Linear or Exponential?

) What is the diode equation?
ii) What is meant by transition & space charge capacitance of a diode?
iv) What is the effect of temperature on PN junction diodes?
v Name some applications of a p-n diode?

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 in step
Vary the value of input dc supply for each step.
voltmeter rendings
Note down the ammeter &
Vs Current.
Plot the graph of Voltage
OBSERVATION TABLE:

forward biased
When diode is
(A)
table for forward biased diode
Table 2: Observation
current, I,(7mA)
voltage, V, (V)|Forward
Sl no. | Applied Voltage (V)Forward

When diode is reverse biased

(B)

Table 3: Observation table for reverse biased diode

SI no. | Applied Voltage (V) | Reverse voltage, V,(V) | Reverse current, I,{A)
1
2

RESULTS:

The forward characteristic of the given P-N junetion diode is obtained by plotting the volt
age, (Vr)on X-axis and current (Tp) on Y-a2xis. Similarly, reverse characteristies of the diode
is obtained by plotting the voltage, (V-) on X-axis and current, (I-) on Y-axis. Typical V-I
characteristics are as shown in fgure 3. The static and dynamic resistances of the given
diode are computed as follows:

Calculations:

(A)In forward bias condition:

Static Resistance, Rs = Vs/l/=

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