C 229 RF Innovative

Nagar Yuwak Shikshan Sanstha’s
Yeshwantrao Chavan College of Engineering

(An Autonomous Institution affiliated to Rashtrasant Tukadoji Maharaj Nagpur University)
Hingna Road, Wanadongri, Nagpur - 441 110
Department of Electronics & Telecommunication Engineering
Academic Session 2022-2023
ET 2401 RF & Microwave
Semester VII (A)
Innovative Teaching Learning (based on all the 6 Units)
Name of Activity: Research Paper Based Case Study
Date of submission: 20-11-2022
Name of student: Sakshi Barapatre
Roll no: C-229
Name of Course Teacher: Dr. Mrs .M. S. Dorle
Name of Topic: Varactor Diode
Title of referred Paper 1: Evaluation of 4H-Sic varactor diodes for

microwave applications
Paper 1 link: https://ieeexplore.ieee.org/document/821502
Title of referred Paper 2: Scattering Phase Performance of Varactor
Diode Across Ring’s Gap Reconfigurable Reflectarray Element
Paper 1 link: https://ieeexplore.ieee.org/document/6599479
Case study Report:

Varactor Diode:
● Varactor diodes or Varicap diodes are
semiconductor devices that are widely
used in the electronics industry.
● A Varactor diode is a type of diode whose
internal capacitance varies with respect
to the reverse voltage.
● It always works in reverse bias conditions
and is a voltage-dependent semiconductor
device.
● Several names are known as Varicap, Volt
Cap, Voltage variable capacitance, or Tuning diodes.
● They are also used within the RF design arena.
Department of Electronics & Telecommunication Engineering,

Yeshwantrao Chavan College of Engineering, Nagpur
Symbol of Varactor Diode :

From the diagram given below, it is evident that the
symbol of the varactor diode is similar to that of the
PN-junction diode.
The diode has two terminals: anode and cathode.
One end of the symbol consists of the diode, and the
other has two parallel lines representing the
capacitor’s conductive plates. The gap between the
plates shows their dielectric.
Construction of Varactor Diode :
The n-type semiconductor, a large number of free electrons are present and in the
p-type semiconductor, a large number of holes are present. The free electrons and holes
always try to move from a higher concentration region to a lower concentration region.
For free electrons, n-region is the higher concentration region and p-region is the lower
concentration region. For holes, p-region is the higher concentration region and
n-region is the lower concentration region. Therefore, the free electrons always try to
move from n-region to p-region similarly holes always try to move from p-region to
n-region. When no voltage is applied, a large number of free electrons in the n-region
get repelled from each other and move towards the p-region. When the free electrons
reach the p-n junction, they experience an attractive force from the holes in the
p-region. As a result, the free electrons cross the p-n junction. In the similar way, holes
also cross the p-n junction. Because of the flow of these charge carriers, a tiny current
flows across the diode for some period.
Construction of Varactor Diode

During this process, some neutral atoms near the junction at n-side lose electrons and
become positively charged atoms (positive ions) similarly some neutral atoms near the
junction at p-side gain extra electrons and become negatively charged atoms (negative
ions). These positive and negative ions created at the p-n junction are nothing but
depletion regions. This depletion region prevents further current flow across the p-n

junction. The width of the depletion region depends on the number of impurities added
(amount of doping).
A heavily doped varactor diode has a thin depletion layer whereas a lightly doped
varactor diode has a wide depletion layer.
Low Reverse Bias of Varactor Diode

An insulator or a dielectric does not allow electric current through it. The depletion
region also does not allow electric current through it. So the depletion region acts like a
dielectric of a capacitor. Electrodes of conductive plates easily allow electric current
through them. The p-type and n-type semiconductor also easily allow electric current
through them. So the p-type and n-type semiconductor acts like the electrodes or
conductive plates of the capacitor. Thus, the varactor diode behaves like a normal
capacitor. In an unbiased varactor diode, the depletion width is very small. So the
capacitance (charge storage) is very large. The varactor diode should always be
operated in reverse bias. Because in reverse bias, the electric current does not flow.
When a forward bias voltage is applied, the electric current flows through the diode. As
a result, the depletion region becomes negligible. Depletion region consists of stored
charges. So stored charges become negligible which is undesirable. A varactor diode is
designed to store electric charge not to conduct electric current. So a varactor diode
should always be operated in reverse bias.
When a reverse bias voltage is applied, the electrons from n-region and holes from
p-region move away from the junction. As a result, the width of the depletion region
increases and the capacitance decreases.

High Reverse Bias of Varactor Diode

However, if the applied reverse bias voltage is very low the capacitance will be very
large. The capacitance is inversely proportional to the width of the depletion region and
directly proportional to the surface area of the p-region and n-region. So the
capacitance decreases as the width of the depletion region increases. If the reverse bias
voltage is increased, the width of the depletion region further increases and the
capacitance further decreases. On the other hand, if the reverse bias voltage is
reduced, the width of the depletion region decreases and the capacitance increases.
Thus, an increase in reverse bias voltage increases the width of the depletion region
and decreases the capacitance of a varactor diode. The decrease in capacitance means
the decrease in storage charge. So the reverse bias voltage should be kept at a
minimum to achieve a large storage charge. Thus, capacitance or transition
capacitance can be varied by varying the voltage.
In a fixed capacitor, the capacitance will not be varied whereas, in a variable capacitor,
the capacitance is varied.
Operation of Varactor Diode :

The function of the varactor diode is to store charges, so it is always operated in reverse
bias conditions. When a forward bias voltage is applied, the electric current flows. As a
result, the depletion region becomes negligible, which is undesirable.
The junction capacitance of a p-n junction diode is inversely proportional to the width
of the depletion layer. In other words, if the width of the depletion layer is less, then the
capacitance is more, and vice versa. So if we need to increase the capacitance of a
varactor diode, the reverse bias voltage should be decreased. It causes the width of the
depletion layer to decrease, resulting in higher capacitance. Similarly, increasing the
reverse bias voltage should decrease the capacitance. This ability to get different values
of capacitances just by changing the voltage applied is the biggest advantage of a
varactor diode compared to a normal variable capacitor.

Varactor Diode Formulae :

Capacitance of 𝐶 =
𝐶𝐾
Varactor Diode 𝑗 ( 𝑉 𝑏
− 𝑉)
𝑚
Quality factor of 𝐹
the Varactor Diode 𝑄 = 𝑓
Notations Used In The Varactor Formula

● Cj is the diode capacitance
● C is the diode capacitance when the device is unbiased
● V is the applied voltage
● Vb is the barrier voltage at the junction
● m is the constant depending upon the material
● K is the constant equal to 1
● F is the maximum operating frequency
● f is the operating frequency
Varactor Diode Characteristics:

In a varactor diode, the capacitance is varied when
the voltage is varied. So the varactor diode is a
variable capacitor. The capacitance of a varactor
diode is measured in picofarads (pF).
Varactor diodes are mostly operated under reverse
bias conditions; therefore, there is no conduction.
They are voltage-controlled capacitors and are
sometimes known as varicap diodes, although the
word varactor is widely used.
Variable Capacitance Characteristics:

Variable capacitance effect is shown by normal diodes, but varactor diodes are
preferred for providing the required capacitance changes. The diodes are uniquely
optimized and manufactured to enable high-range changes in capacitance. Varactor
diodes are categorized based on the properties of the diode junction.

Varactor Diode Applications:

Some applications of varactor diodes are given in the points mentioned below.
● They are used in the RF design arena and provide a method of varying the
capacitance within a circuit by applying control voltage. It provides them with
special capability, due to which varactor diodes are used in the RF industry.
● These diodes are used in many circuits and find applications in two main
sectors.
● FR filters – Tuning filters using varactor diodes is possible. Tracking filters can
be required in front-end receiver circuits wherein the filters are enabled to track
incoming signals’ frequency.
● Voltage-controlled oscillators (VCOs) – VCOs are used for many applications,
and oscillators within a phase-locked loop are the major region. VCOs are
present in almost all wireless receivers and radios.
● Varactor diodes are used in frequency multipliers.
● Varactor diode is used in parametric amplifiers.
Gist of Research Paper 1:

Varactor diodes fabricated from GaAs or Silicon
have long played an important role in high
frequency electronics. Fabricated from either
p-n or Schottky diodes, these varactors provide
voltage-controlled capacitance (and hence
reactance) through the variation in depletion
width with reverse bias. Such devices are
commonly utilized in a wide range of circuit
configurations (e.g. in voltage-controlled
oscillators, millimeter wave multiplier arrays
and harmonic generators). Such circuits are
limited to voltages of -3OV by the onset of
device breakdown in the varactor from impact
ionization effects.
The suitability of Sic p-n junction and Schottky
varactor diodes for high frequency applications
is demonstrated. It is shown that such devices are capable of operating at high biases
(over 130V) - offering greater power density, impedance and operating temperature
compared to conventional GaAs or Si varactors. The limitations induced by relatively
high contact resistivities are evaluated in terms of applications at 1 OGHz.
Device Fabrication:
The Sic devices described in this study were fabricated using commercial n-type 4H-Sic
material (supplied by Cree Inc.) - consisting of a lowly doped n-type epilayer (5pm
thick, N~,,i=2.45~10'~~111-~) grown on a highly doped n-type substrate (ND~~~= 1x1
O'*cm"). All experiments were performed on batches of samples consisting of small
sections of a given wafer with each experiment repeated to check repeatability and
consistency. All data presented are typical values representative of the results observed
from all samples.
Device Theory:
Both simple Schottky and abrupt p-n junction varactors can be described by
straightforward semiconductor theory. Equation 1 gives the well-known variation of
capacitance (C) with applied voltage (V) for a uniformly doped depletion region:
where A is the area of the diode, ND is the doping level of the

depleted region and obi is the built-in barrier of the junction.
Simple semiconductor transport physics gives (within simple approximations) Rs in

terms of the contact resistivity (pc) and the carrier mobility (p) as:
where w is the width of the depleted region and A is the area of the
ohmic contact.
Quality factor of the varactor (Q) can be defined as:

where fo is the operating frequency.
The cut-off frequency (fc) is then defined as the frequency at which the Quality factor is
equal to unity giving:
Conclusion:
The suitability of Sic p-n junction and Schottky varactor diodes for high frequency
applications has been demonstrated. Such devices are capable of operating at high
biases (over 130V) - offering greater power density, impedance and operating
temperature compared to conventional GaAs or Si varactors. Analysis of the effect of
contact resistivity shows clearly that it is this limitation which dominates performance
to date. However, processing technology of Sic is improving rapidly and practical Sic
varactor diodes can be expected to appear in circuit applications very soon.

Gist of Research Paper 2:

The purpose of this study is to investigate the scattering phase performance of the
double split ring element for beam scanning potential of the reflectarray antenna at
Ku-band frequencies (15-18 GHz). It can be achieved by integration of a varactor
diode with a range of 0.1-2.5 pF across the ring's gap. Optimization of radius and
gap is done in five different combinations in order to get the best performance of
scattering phase range with the lowest reflection loss.
In this paper, investigation of scattering phase of the reflectarray element in double
split ring shape integrated with a varactor diode across the gap for feasibility of the
reflectarray antenna in beam scanning approach. The paper contributes simple
design with single substrate and single varactor diode at Ku-band for space
communication. The reflected phase and reflection loss curves for reflectarray
elements with different combinations of radius and gap have been investigated and
analyzed.
ELEMENT DESIGN:
Scattering phase properties of varactor diode integration across the ring’s gap is
investigated by simulation on five different combinations of radius, R and gap, g.
The detailed specifications of designs are shown in Table.
A varactor diode is represented as a fixed capacitor as a proof of concept across the

left gap. The split approach in ring design is chosen based on the ability to provide
significant improvement to the performance of linear phase range, phase slope and
inevitable bandwidth.
Based on a preliminary simulated result, the effect of a varactor diode integrated
across the ring's gap to the surface current and current density can be observed
with the presence of capacitance. As an example, the surface current and current
density are varied from 15.7 to 83.2 A/m and 20.8 to 33.2 A/m2 respectively for C
= 0.2 pF integrated across 1 mm gap of Ro = 4 mm and Ri = 2 mm ring.
Concentration of current distribution depends on the reflective area of each
element design. The results also contributed to changes of resonant frequencies.

The reflected phase changes up to 3000 in different tuning ranges of frequencies.
In Figure 5 (a) and (b), it can be seen that frequencies are tuned between
15.852-17.562 GHz and 16.200-17.430 GHz with tuning ranges of 1.71 GHz and
1.23 GHz respectively.
The small shift of resonant frequency results in changes of reflected phase of
operating frequency. The reflected phase adjustable of element is required for
reconfigurable reflectarray design.
Four operating frequencies of four ring designs are selected to summarize the
performance of scattering phase with a phase variation of 3000 as reference value.
The reasonable maximum tunable phase shift of 300º is quite enough for
reflectarray antenna designing to prevent more losses.
The reflected phase of the reflectarray element should be 0 dB at resonance in
order to get a maximum reflected energy. Minimum reflection loss can be achieved
when the signal energy reflection is the same as when signal energy is illuminated.
A frequency range of 16.752- 17.982 GHz is achieved with a tuning range of 1.23
GHz. Despite the greater operating frequency it offers, it can be seen that the
reflection loss of this design is high, which is -1.3 dB.
Conclusion:
The scattering phase performance of a varactor diode integrated across the ring’s
gap with five specifications of ring design element has been investigated and
optimized for reconfigurable reflectarray antenna approach. The results of this
study demonstrated the scattering phase of the element with a minimum 3000 at
Ku-band in operating frequency of 15.123 GHz to 17.028 GHz. The ring design with
R0 = 4 mm and Ri = 3 mm with gap = 1 mm offers the lowest reflection loss of -
0.65 dB at 15.123 GHz. This design will be used for future work in realizing
reconfigurable reflectarray antenna based on the lowest reflection loss it offers in
this initial result.


C 229 RF Innovative

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C 229 RF Innovative

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Nagar Yuwak Shikshan Sanstha’s

Yeshwantrao Chavan College of Engineering

Title of referred Paper 1: Evaluation of 4H-Sic varactor diodes for

Case study Report:

Department of Electronics & Telecommunication Engineering,

Symbol of Varactor Diode :

Construction of Varactor Diode

Department of Electronics & Telecommunication Engineering,

Low Reverse Bias of Varactor Diode

Department of Electronics & Telecommunication Engineering,

High Reverse Bias of Varactor Diode

Operation of Varactor Diode :

Department of Electronics & Telecommunication Engineering,

Varactor Diode Formulae :

Notations Used In The Varactor Formula

Varactor Diode Characteristics:

Variable Capacitance Characteristics:

Department of Electronics & Telecommunication Engineering,

Varactor Diode Applications:

Gist of Research Paper 1:

where A is the area of the diode, ND is the doping level of the

Simple semiconductor transport physics gives (within simple approximations) Rs in

Quality factor of the varactor (Q) can be defined as:

Department of Electronics & Telecommunication Engineering,

Gist of Research Paper 2:

A varactor diode is represented as a fixed capacitor as a proof of concept across the

Department of Electronics & Telecommunication Engineering,

Department of Electronics & Telecommunication Engineering,

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