Desai, Electrical Resistivity of Aluminium and Manganese

Electrical Resistivity of Aluminum and
Manganese
Cite as: Journal of Physical and Chemical Reference Data 13, 1131 (1984); https://doi.org/10.1063/1.555725
Published Online: 15 October 2009
P. D. Desai, H. M. James, and C. Y. Ho
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Journal of Physical and Chemical Reference Data 13, 1131 (1984); https://doi.org/10.1063/1.555725 13, 1131
© 1984 American Institute of Physics for the National Institute of Standards and Technology.
Electrical Resistivity of Aluminu~ and Manganese
P. D. D'esai, H. M. James, and C. Y. Ho
Center for Information and Numerical Data Analysis and Synthesis, Purdue University, West Lafayette, Indiana 47906
This work compiles, reviews, and discusses the available data and information on the
electrical resistivity of aluminum and manganese and presents the recommended values
resulting from critical evaluation, correlation, analysis, and synthesis of the available data
and information. The recommended values presented are uncorrected and also corrected
for the thermal expansion of the material and cover the temperature range from 1 K to
above the melting point into the molten state for aluminum and to 700 K for manganese.
The estimated' uncertainties in most of the recommended values are about ± 2% to
±5%.
Key words: aluminum; conductivity; critical evaluation; data analysis: data compilation: electrical
conductivity; electrical resistivity; elements; manganese; metals; recommended values; resistivity.
Contents
Nomenclature .......................................................... . 1131 List of Figures

1. introductIon ................................................... .. 1131
1. Electrical resistivity of aluminum .................. .. 1134
2. General Background ....................................... . 1132 2. ,Electrical resistivity of aluminum ................... . 1135
3. Electrical Resistivity Data and Information .. .. 1133 3. Electrical resistivity of aluminum ................... . 1136
3.1. Aluminum ...................... ~ ... ;~ ................. .. 1133 4. Electrical resistivity of manganese ................. .. 1162
3.2. Manganese ....................................... ,..... .. 1160 5. Electrical resistivity of manganese .: ............... .. 1163
4. Acknowledgments ....................... ;............. , .... .. 1169
5. References .......... ~ ........................................... .. 1169
Nomenclature
c Impurity concentration
e Base of natural logarithm
List of Tables L Length of specimen at T
1. Recommended values for the electrical resistiv- Lo Length of specimen at To
ity of aluminum ................................................ 1133 jjL jjL =L -Lo
2. Measurement information on the electrical re- M Atomic weight
sistivity of aluminum ........................................ 1138 RRR Residual resistivity ratio
3. Experimental data on the electrical resistivity T Temperature
of aluminum ..................................................... 1153 To Reference temperature
4. Recommended values for the electrical resistiv- ~ Deviation from the Matthiessen's rule
ity of manganese .................................... ~ .......... 1161 P Electrical resistivity
5. Measurement information on the' electrical re- Po Residual electrical resistivity
sistivity of manganese ...................................... 1164 Pe Electrical resistivity due to electron-electron
6. Experimental data on the electrical resistivity scattering
of manganese .................................................... 1167 'Pi Intrinsic electrical resistivity
1. Introduction cal resistivity of aluminum and manganese are presented in

this work (for manganese the recommended values cover the
The principal objective of this project was to exhaus- temperatures up to 700 K only), which is one in a series of
tively compile, critically evaluate, analyze, arid synthesize similar works on the electrical resistivity of selected ele-
all the available data and information on the electri~al resis- ments, some published. 1- 3 The comprehensive study of the
tivity of a large number of selected elements and to generate electrical resistivity of the elements at the Center for Infor-
recommended values over a full range of temperature froin 1 mation and Numerical Data Analysis and Synthesis (CIN-
K to the melting point and beyond. The results on the electri- DAS) has been a continuation of a similar extensive work on
the thermal conductivity of the elements. 4
~ 1984 by the U.S. Secretary of Commerce on behalf of the U oited States.
The general background information on this work is
fhis copyright is assigned to the American Institute of Physics and the
American Chemical Society. given in Sec. 2, which includes a brief introduction to the
Reprints available from ACS; see Reprint List at back of issue. theory of the electrical resistivity of metals and a detailed
0047-2689/84/041131-42/$07.00 1131 J. Phys. Chem. Ref. Data, Vol. 13, No.4, 1984
1132 DESAI, JAMES, AND HO
explanation of the specifics and conventions used in the pre- (7) A table of ~xperimental data for all the data sets
sentation of the data and information. listed in item (6) above.
The experimental data and information and the recom- In the discussion text on the electrical resistivity, indi-
mended values for the electrical resistivity of the two ele- vidual pieces of the data and information on which the rec~
ments are presented in Sec. 3. In the discussion ofthe electri- ommendations are based are indicated, the considerations
cal resistivity of each element, details of data analysis are involved in arriving at the final assessment and recommen-
discussed, and the uncertainties in the recommended values dations are discussed, and the uncertainties of the recom-
are stated. The recommended values both uncorrected and mended values are stated.
corrected for the thermal expansion of the material are pre- The recommended values are for well-annealed, high-
sented in this section. The values cover the temperature purity specimens; however, values for low temperatures are
range from 1 K to above the melting point for aluminum and applicable only to specimens having the residual electrical
to 700 K for manganese. resistivity as given at 1 K in the tables.
The last two sections are for acknowledgments and re- -The recommended values uncorrected and corrected
ferences. The classification and organization of methods for for the thermal expansion of the element are both given in
the measurements qf electrical resistivity and the conversion the table. Tl)e uncorrected and corrected values are related
factors for the units of electrical resistivity have been given in by the following equation:
Ref. 5. '
Pcorrected (T) .= [ 1 + --z:-

AL (T))
Puncorrected (T ), (2)
2. General Background
where .aL = L Lo and Land Lo are the lengths of the
It was found experimentally by Matthiessen that the
specimen at any temperature T and at a reference tempera-
increase in the electrical resistivity of a metal due to the pres-
ture To, respectively. The thermal expansion correction for
ence of a small amount of another metal in the solid solution
aluminum amounts roughly to about - 0.5% to - 0.9% at
is independent of the temperature. According to this Matth-
very low temperatures, zero at room temperature, about
jessen's rule, the total electrical resistivity of an impure me/iiI
0.5% at 500 K, and about 1.6% near the melting point of the
may, therefore, be separated into additive co~tributions: Po,
element. For manganese, the correction is about - 0.3% at
residual resistivity caused by the scattering of electrons-by
low temperature, zero at room temperature, and 0.8% at 500
impurity atoms and lattice defects and is temperature inde-
K.
pendent but dependent on the impurity concentration (c);
The recommended values in some cases are given with
and Pi' the temperature-dependent intrinsic resistivity aris-
more significant figures than warranted, which is merely for
ing from the scattering of electrons by lattice waves or phon-
tabular smoothness or for the convenience of internal com-
ons. However, in reality it is observed that
parison.
p(c,T) = Po(c) + Pi (T) + .a (c,T), (1 ) In the figures, a data set consisting of a single data point
is denoted by a number enclosed by a square, and a curve
where.J is the deviation from the Matthiessen's rule. that connects a set of two or more data points is denoted by a
It is to be noted that for some metals, especially transi- riugt:u Ilumbt:l. Tht:St: lh.1tu :set numbers cUfft::spuml to tho:se
tion metals, an electron-electron scattering term (Pe) makes listed in the accompanying tables providing measurement
a significant contribution to Pi at low temperatures, and is information and tabulating numerical data for each of the
generally included along with the Bloch-Gruneisen7,8 term data sets. The data set numbers of those data sets omitted
in representing Pi' Further comments on Matthiessen's rule from the figure are asterisked in tables providing the mea-
and the theoretical aspects of the temperature-dependent surement information and tabulating the experimental data.
electrical re~istivity are given in Refs. 5-8. The experimental methods used for the measurement of
In Sec. 3, electrical resistivity data and information for the electrical resistivity are indicated in the column headed
aluminum and manganese are presented in the following or- "Method Used" in the table by the following code letters:
der: A Direct-current potentiometer method
(1) A discussion text, B Direct-current bridge method
(2) A table of recommended values, C Alternating-current potentiometer method
(3) A figure presenting experimental data as a function D ac bridge method
of temperature in a log-log scale (for manganese, due to the K Direct heating method
relo.tively small number of data sets, this figure is not given), p Van der Paw method
(4) A figure presenting recommended values and select~ R Rotating magnetic field method
ed experimental data (on which the recommendations were ~ This symbol means either that the method de-
based) as a function of temperature in a log-log scale, scribed by the author is not sufficient for assign-
(5) A figure presenting recommended values and select- ing a specific code letter or that the use of a code
ed experimental data (on which the recommendations were letter would not convey enough of the informa-
based) as a function of temperature in a linear scale, tion reported in the research document, and
(6) A table giving measurement information on the ex- therefore the method used is described briefly in
perimental-data presented in the figures, and the last column of the table.
J. Phys. Chem. Ref. Data, Vol. 13, No. 4,_1984

ELECTRICAL RESISTIVITY OFALUMINUM AND MANGANESE 1133
3. Electrical Resistivity Data and and 3 'can be rejected as the basis for estimation of the electri-
Information cal resistivitY-of pure aluminum because of the impurity con-
tent~ cold work, or inadequate annealing of the samples.
3.1. Aluminum Other data sets are for specimens subjected to procedure .
intended to produce oxidized surface layers. Most of the
There is a large body of data and information available available data appears to be uncorrected for thermal expan-
on the electrical resistivity of aluminum. This includes data sion of the samples, although this correction amounts to
not only on very pure bulk material [indicated by a 5 N puri- 1.6% near the melting point. Among the data sets reported
ty, very large residual resistivity ratio (RRR) of up to 46000, in Table 2, only the data of Cook et al. 22 (data set 69), Ra-
and very low residual resistivity Po of the order of 10- 12 denac et al....... (data set 104), Wilkess:J (data set 11)), and of
11 m] but also on thin.films as wen as on,e1fects such as those Simmons and Bal1uffi74 (data set 150) are explicitly stated to
of cold work, quenching, annealing, deformation, irradia- have been corrected for thermal expansion, and the opposite
tion, and pressure. Over 190 data sets, mostly on the bulk has been assumed in all other cases.
material as a function of temperature, are presented in this Deviations from Matthiessen's rule are quite significant
work. in aluminum and have been carefully studied. Ribot et al. 9
The information on specimen characterizations and on (datadsets 1-21) concluded that Matthiessen's rule is obeyed
the measurement condition for each 'of the data sets is given below 4.2 K. However, their studies do not extend above this
in Table 2. The data sets are tabulated in Table 3 and shown temperature. Another complicating factor is the importance
partially in Fig. 1. Only those data sets used in the recom- of surface scattering for the resistance at low temperatures of
mendation procedure are shown in Figs. 2 and 3. pure samples in the form of foils or wires of diameter much
The work reported in the last several years (data sets 1- less than 1 mm. This size-dependent contribution to the
67) is concentrated on the study of the low-temperature be- measlJred resistance, which is about proportional to T2 as
havior of the electrical resistivity and the origin of the so- determined by van der Mass et al.,97 is comparable to the
called DMK (deVIation from Matthlessen's rule). it has been temperature-dependent resistance at 2 K which has been at-
reported that various scatterers such as impunties, disloca- tributed to electron-electron scattering, for instance by Ri-
tions, and surfaces (as in the size effect) can change the tem- bot et al. 9 Its role in the reported low-temperature behavior
perature-dependent resistivity substantially and can pro- of electrical resistivity for aluminum has been the subject of
duce large DMR. Many of the data sets reported inTables 2 study and disagreement. It is attributed to a change in the
TABLE 1. RECOMMENDED VALUES FOr. TIlE ELECnUCAL RESISTIVITY OF ALUMINUMa
[Temperature, T, K; Electrical Resi st ivity. p, 10- 8 12 m]
p
T T
Uns;saI1l c j;ed corrected uncorrected corrected
1 0.000100 0.000100 700 7.350 7.322
2 0.000102 0.000102 800 8.700 8.614
4 0.000109 0.000109 900 10.18 10.005
7 0.000139 . 0.000140 933.52 10.74{s) 10!565{s)
10 0.000193 0.000192 933.52 24.77 CO
15 0.000346 0.000345 1000 25.88
20 0.000755 0.000748 1100 27.46
25 0.00187 0.00186 1200 28.95
30 0.00453 0.00451 1300 30.38
40 0.0181 0.0180 1400 31.77
50 0.0478 0.0476 1500 33.11
60 0.0959 0.0955 1600 34.40
70 0.1624 0.1618 1700 35.69
80 0.245 0.2439 1800 36.93
90 0.339 0.338 1900 38.18
100 0.442 0.440 2000 39.34
150 1.006 1.003
200 1.587 1.584
250 2.157 2.155
273 2.417 2.417
293 2.650 2.650
300 2.733 2.733
400 3.866 3.875
500 4.995 5.020
600 6.130 6.122
aThe values are for well-annealed aluminum of purity 99.99% or higher, but
those below 40 K apply specifically to samples with PO = 1.00 x 10-12 0 m.
The columns headed uncorrected and corrected refer to values uncorrected and
corrected for thermal expansion, respectively. Solid line separating tabular
values indicates solid to liquid state transformation.
J. Phys. Chem. Ref. Data, Vol. 13, No.4, 1984

,-
1-
I
23456810 2 3 4 5
CINDAS TEMPERAT~E •k
J. Phys. Chem. Ref. Data, Vol. 13, NO.4, 1984

ELECTRICAL RESISTIVITY OF ALUMINUM AND MANGANESE 1135
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CINDAS TEMPERATURE • K FIGLRE 2
J. Phys. Chem. Ref. Data, Vol. 13, NO.4, 1984

11.0 ~---.---~---r------'--~----r---'-------r"""'--+-""'I--r-'------r--..------r----'
! \' i
10.5
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9.5 I--
ELECTRICAL RESISTIVITY OF _1--0
ALUMINUM AI
9.0
8.5
!I
, ..
8.0
1
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7.0 I----l----t-------I--+--t--J~ .: '+--~ -+----+---+----+---+-----1-----..1
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c:
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6.5 I--------+----+---+----+---N ·------t---+-~-i-------l--+-----1i
;6DI----4__- +___ ~li ~ ~ ~~--~ ~--~~--~---4i--~
__ __ __
~ I • ~ I
~ 5.5 i \ I
~ 127 I RECOMMENDED
S 5.01----+---1----1---+
~
(below 40 K applicable specifically --+---+---+----1
12
Ifor Po = 1.00 x 10- .a m)
a=
~
1
. . +-"@ I:
~45 I ~t;. 1 I !
4.0 I-----+----+-@ - - ~ --+--+---+--+---+--+---l+!---l---+-----j
A!
3.51------'----+---l-
I
3.01-----!---=!-----l
v
I -
~/
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j
m ~RECOMMENDED
'0 130 (liquid)
2.5 I-----!-- - -
@Ll i
-:
f2:
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2.0 115
129 L I
~ 30 r-~ [@ ~ ~ ~ £ £
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,.-
-
G:l rTm 933.52 K\
D I c;:l 20 I \ , \ I .-
800 1000 1200 1400 1600
- I
:I TI::.MPERATURI::. • K
1800 2000
I I I
0 .5 \19
I
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. 'TTs 1.183 K, i I I
Tm 933.52 K "l
I i j : I
O.0
0 100 200 300 400 500 600 700 800 900 1000 1100 \200 \300 1400
CINDAS TEMPERATURE • K FIGURE :3
J. Phys. Chern. Ref. Data, Vol. 13, No.4, 1984

electron distribution near the surface and is reported by van is a general agreement ( ± 5%) between most of the data sets.
der Mass et, al. 97 to depend only on the surface resistivity. The recommended values in the liquid region are based on
Sample-dependent anomalies complicate the study of the these data sets, giving weight to the data of Romanova and
temperature dependence of the size effect below 4 K. Persion 35 (data set 89), Levin et al. 40 (data set 95), Powell et
There has been an active interest in measuring and ana- al. 63 (data set 130), Roll et al. 78 (data set 157), and of Ma-
lyzing the bulk resistivity of aluminum in the low-tempera- tuyama88 (dataset 181).
ture range. Sambh:.:s et ul. QR h"vt: givc::n ClIl extensive list of The recommended values for the electrical resistivity
effective singie-power laws that have been used in represent- given in Table 1 and shown in Figs. 2 and 3 are for well-
ing this resistivity over various temperature ranges below 60 annealed un oxidized aluminum of purity 99.99% or higher,
K. Generally speaking, the temperature-dependent part of but those below 40 K apply specifically t6' sampleS with
the resistivity drops from T 5 dependence above 20 K to a T2 Po = 1.00 X 10- 12 {} m. The table gives both values uncor-
dependence around 2 K. The careful studies of Ribot et al. 9 rected and corrected for thermal expansion, while Figs. 2
(data sets 1-21), based on their measurements of aluminum and 3 show only the uncorrected recommended values along
samples with RRR up to 40600, yield a temperature-depen- ' with the experimental data which were used to generate
dent resistivity that can be represented by AT2 + BT 5 below these values. Thermal expansion values needed to carry out
2.2 K, with ,the T 2 term dominant. This form has been found thermal expansion correction were taken from Ref. 109,. The
to be useful by others over a considerably wider temperature llncertainty in the, recommended values is estimated to be
range. The T 2dependence around 2 K has been confirmed by within ± 1% below 400 K, ± 2 % from 400 K up to the
Garland and Van Harlingen l3 (data sets 48-54), Van Kem- melting point, and about ± 3% for the liquid.
pen et aI., 99 and Boysel et al. 100 According to the elementary Electrical resistivity of slightly less pure aluminum with
theory of electron-electron scattering in metals, it would dift'erent residual resistivity can be calculated from the rec-
give rise to a T2 term in the resistivity, and the observed T2 ommended values using the Matthiessen rule. This proce-
dependence of the electrical resistivity in aluminum around dure involves subtracting Po from the recommended P value
2 K is commonly attributed to this scattering. The observed to obtain the temperature-dependent part to which Po of the
T2 term is, however, much larger than that given by the sim- specimen in question be added to generate a set of values
ple theory of electron-electron scattering. A promising applicable to that specimen. However. it should be pointed
elaboration of the theory has been suggested by MacDon- out that this procedure neglects contributions due to devia-
ald. 101 Other researchers who deal with this subject are Na- tions from the Matthiessen rule. It is noted that Ribot et a/~'fJ
kamichi and Kino 1o (data sets 22-28), Babic et al. 1~ (data sets found the deviations from Matthiessen's rule (DMR) to be
60,61), Aleksandrov and D'yakov68 (data sets 139-141), Sen- insignificant below 4.2 K for 0.7 X 10- 12 <Po < 111- 12 {} m.
oussi and Campbe11 32 (data sets RS,Rfi); and Refs, 102-108. The review by Cimberle et al. 356 indicates that toward higher
The recommended values for the electrical resistivity at temperature DMR becomes significant at 20' K for
low temperatures are based on the data of N akamichi and Po> 2X 10- 12 n m and at 50 K for Po> 1.0X 10- 10 n m.
Kino lO (data sets 22-28) who studied samples of such high As mentioned earlier" electrical resistivity measure-
purity that surface scattering of the carriers became a signifi- ments for aluminum reported in the literature are not only
cant factor in small wires or thin foils. Specifically, their for bulk material but also for aluminum under various phys-
values for the resistivity of bulk aluminum (data set 28), de- ical as well as thennal conditions. Additional information is
rived hy extrapolMlne thelT results for thicker and thicker available in Refs. 110-188. In the following paragraphs, an
samples, were used as the basis for the recommended values attempt is made to sort the source documents to highlight
below 40 K. These are the representative values to be expect- important effects.
ed for bulk samples with Po of the order 10- 12 {} m, or RRR The electrical resistivity studies at low temperature of
approaching 27000. From 4U to 4UU K, the recommended thin films IS of great interest to many researchers. The main
values follow closely the data of Cook ei al. 22 (data set 69), purpose of the study appears to study so-called "size effect."
Seth and Woods 45 (data set 105), Wilkes 53 (data set 115). Some of the works are cited above. The effect of grain bound-
Moore et al. 60 (data set 125), and of Simmons and BallufiJ?4 ary scattering on the electrical resistivity was reported by
(data set 150). From 400 K to the melting point, the recom- Bandyopadhyay and Pal 189 and by Andrews et al. 190 Addi-
mended values are based on the reasonably concordant (al· tional infonnation on the thin films in general is reported in
lowing for the different treatments of thermal expansion) Refs. 191-211.
results of Kedves et al. z8 (data set 7~), Redenac et al:~4 (data Properties such as specific heat as well as electrical re-
set 104), and of Logunov and Zverev48 (data set 109). It is sistivity show a progressive increase above the linearly ex-
worth noting that their data show a progressive increase in trapolated values at high temperatures. As mentioned ear-
the electrical resistivity values above the expected linearly lier, this increase is ascribed to scattering by thermally
extrapolated values above 700 K. This was attributed by generated point defects. Several semiempirical approaches
Simmons and Balluffi74 to scattering by thennally generated to calculate contribution to vacancy-type defects have been
point defects of the type which add atomic sites (vacancy- proposed by various investigators. In addition to the study of
type defects). Simmons and Balluffi74 reported here, the readers are direct-
There are about 15 data sets available for the electrical ed to Refs. 212-230.
resistivity of aluminum in the liquid region. The temperature The lattice defects of solids induced at low temperature
range covered by these data sets is from 933 to 1973 K. There by irradiation have received considerable attention in the

~ ...I.
...I.
~
"
::r
TABLE 2. MEASUREMENT INFORMATION ON THE ELECTRICAL RESISTIVITY OF ALUMINUM Al
~
Q)
o
if Data Name and
~ Set Ref.
,\uthor (s) Year
Method Temp.
Specimen Composition (weight percent), Specifications and Remarks
2J No. Used Range, K
ft) No. Designation
:""
o 1* Ribot, J.H.J.M., 1981 1. 600-2 .171 Sample 1 High purity specimen; nominal impurity <0.5 ppm; Po = 0.0000928 x
I» Bass, J.,'van Kempen, 10-8 0m ; RRR = 29000; 1.4 mm diam. and about 1.5 m long cylindrical
i H., van Vucht, R.J.M., wire wound in double helix around quartz cylinder; before mounting,
~
and Wyder, P. samples were cleaned in 40% NaOH solution to facilitate spot welding
to 1 rom diam. ultrapure aluminum potential leads; welds were made
-4
~
with minimum electrical energy needed, to achieve mechanical stability
Z and showed no extra oxide formation; aft~r annealing, test weld had
P resistance <5 x 10- 8 0 at 4.2 K; samples were annealed in dry hydro-
~,fA gen (s:10 ppm water) at 1 atm for 1 h at 773 K and 1 h at_ 673 K and
":d slowly to room temperature; lead wires were superconducting,
C
co ~L~ached using supercoQducting solder, Tc = 1.18 K; measurement uti-
,fA
lized supercond~cting flux gated galvonometer anq current comparator
with optimal precision of 0.1 ppm; series "a" data.
2* Ribot, J.H.J.M., 1981 1.298-3.842 Same as above except measurements designated as series "b".
et a1.
C
m
3* Ribot, J.H.J.M., 1981 1.600,2.171 Same as above except measurements designated as series "c" (J)
et al.
~
Co.
4 9 Ribot, J. H.J .M.,
et a1.
1981 2.631-4.221 Sample 2 Same as in data set 1 except sample diam. 3.0 mm; Po = 0.0000667 x
10- 8 Om; RRR = 40,600; measurements designated as series "a".
>
s:
rn
5* Ribot, J.H.J.M., 1981 2.362-3.997 Same as above except measurements designated as series "b", In
et a1. l>
Z
6* Ribot, J.H.J.M., 1981 4.134,4.224 Same as above except measu~ements designated as series II C" • C
et a1. ::t:
0-
7* Ribot, J.H.J.M., 1981 1.180-2.172 Same as above except measurements designated as series lid".
et a1.
8* Ribot, J.H.J.M., 1981 2.578-4.220 Sample 3 Same as in data set 1 except sample diam. 3.0 mm; Po = 0.0013 x
et a1. 10- 8 0m; RRR = 21000; nominal impurity <5 ppm; measurements desig-
nate,:l as series "a".
9* Ribot, J.H.J.M., 1981 1.950-2.80 Same as above except measurements designated, as series fib".
et al.
10* Ribot, J.H.J.M., 1981 1. 292-1. 900 Same as above except measurements designated as series Itc".
et al.
11* Ribot, J.H.J.M., 1981 1.253-1.451 Same as above except measurements designated as series lid".
et al.
12* Ribot, J.H.J.M., 1981 2.049,2.100 Sample Same as in data set 1 except nominal impurity <8 ppm; sample diam.
et a1. 3.0 mn; Po "" 0.000292 X 10- 9 Om; RRR = 9300; measurements deSignated
as s2!ries "d".
*Not shown in figure.
TABLE 2. MEASUREMENT INFORMATION ON THE ELECTRICAL RESISTIVITY OF ALUMINUM Al (continued)
Data Name and

Set Ref. Method Temp.
Author{s) Year Specimen Composition (weigh~ percent), Specifications and Remarks
No. No. Used Range, K-
Designation
13* Ribot, J.H.J.M., 1981 3.183-4.133 Same as above except measurements designated as series "b".
et a1.
14* Ribot, J.H.J.M., 1981 1. 501-4.221 Same as above except measurements designated as series "e",
et a1.
m
15* Ribot, J.H.J.M., 1981 4.209 Same as above except measurements designated as series "d". I
et a1. m
o
-f
16* Ribot, J.H.J.M., 1981 1. 254-1. 601 Same as above except measurements designated as series "e". ::JJ
et a1.
,.
(;
I
17* Ribot, J.H.J.M., 1981 1. 522-4.218 Sample 5 Nominal impurity <100 ppm; Po = 0.01068 X to- 8 Qm; RRR = 255;
et a1. cylindrical wire 2.0 mm diam. and 10 em-long; cleaned in NaOH ::JJ
solution, annealed in hydrogen as described in data set 1 and then m
rec:eaned in solution; ultrapure, 3 em long aluminum potential leads
en
were then spot-welded to sample 2 em in fron each end; mounting of ~
sample was achieved as described in data set 1. <:
18* Ribot, J.H.J.M., 1981 1.294-4.200 Sample 6 Same as above (data set 17) except impurity unknown; Po 0.01106 x =i
et a1. 10- 8 Qm; RRR = 245; specimen diam. 1.0 mm.
<
o
19* Ribot, J.H.J.M.,
et a1.
1981 L224-4.206 Sample 7 Intermediate purity sample, impurity <10 ppm; Po = 0.000663 X
10- 1 Q~; RRR = 4100; sanp1es were spark-cut from aluminum sheet 1 mm
,.
-n
I
thick, 10 em long, and 1 mm wide contained four tabs 1 mID wide and C
2 ron long located approximately symmetrically on the sample about i:
1 cn in-from each end; cleaned in NaOH solution; annealed in air; Z
potential contacts were soldered to ends of two tabs on the same side c
of the sample.
,.z
i:
20* Ribot, J.H.J.M., 1981 1.371-4.229 Sample 8 Same as above (data set 19) except Po = 0.000601 X 10- 6 Qm; RRR
et a1. 4500; sample annealed in hydrogen for 22 h. C
~
21* Ribot, J.H.J.M •• 1981 1.241-4.211 Sample 9 Same as above (data set 19) except Po .. 0.002245 8
10- Qrn; RRR
,.
i:
":::r
~
et a1. 1100; sample left unartnealed.
X
Z
,.
G')
o
:::r 22* 10 Nakamichi, I, and 1980 A 1-42 Specimen made from block (10 x 20 x 90 mm 3 ) cut from zone refined Z
CD Kino, T. polycrysta1line Al bar CRRR = 26000); thickness 0.0195 rom x 5 mm m
~ (reduced thickness 0.019 mm based on 2 x cross section divided by en
m
:u per:meter); specimen annealed for 3 h at 600°C in air and then cooled
CD
:'"' down in furnace; RRR = 1692; data taken fron figure.
c
; 23* 10 Nakamichi, I. and
Kino, T.
1980 A 1-43- Sim~lar to the above except thickness 1.484 mm and width 2.94 mm
(reduced thickness 0.986 mm); RRR c 17310; ~alues.are fairly close
< to the bulk values calculated from data for strips using Fuchs-
~ Sondheimer relation; data taken from figure.-
~
Z 24* 10 Nakamiehi, I. and 1980 A 1-35 Similar to the above except thickness 0.1955 mm and width 3.17 mm
P Kino, T. (reduced thickness 0.184 mm); RRR = 7523; data taken from figure.
JA
.... *Not shown in figure. ~
=
~
(,,)
~ CD
f-
." .............
o
~
(')
:r Data Name and

CD Ref. Method Temp.
? Set
No.
At:thor(s) Year
Used Range, K
No. Designation
~ 25* 10 Nakamichi, I. and 1980 A 1-41 Similar to the above except thickness 0.101 mm and width 4.66 mm
i' Kino, T• (reduced _thickness 0.099 mm); RRR ~ 4697; data taken from figure.
.Pt 26* 10 Nakamichi. I. and 1980 A 1-42 Similar to the above except thickness 0.039 mm and width 5 mm
....~
Kino, T • (reduced thickness 0.039 mm); RRR = 2717; data taken from figure.
,SI) 27* 10 Nakamichi, I. and 1980 A 1-42 Similar to the above except thickness 0.030 mm and width 5 mm
z Kino, T. (reduced thickness 0.030 mm);RRR 2041; data taken from figure.
0:
~
~ 28 10 Nakamichi, I. and 1980 A 1-40 Values for bulk material based on their measurements for 0.0195-
CO Kino, T. 1. 484 mm thick strips of zone refined aluminum bar of bulk RRR =
CD - 26000 and Fuchs-Sondheimer relation; the values are fairly close to
~
the values for 1.484 mm thick strip.
29 11 Kim, S.B. and Wang, 1978 A 4.2 Aluminum -Ill 99.999 AI; polycrystalliIle supplied by D. _Koop of Alcoa; 0.7 em diam. x
S.T. 3.5 em long; soft shouldered on both ends with copper bars 1.8 em
diam. x 7.5 em long; resistivity obtained from following relationship: m
o
~p(£,B) = Po + Pd (£l + Prr (S,B) (£ & B have no significance since £ en
was considered at zero strain (s) and zero magnetic field (B); data
taken from figure; reported error 10%.
~
C0-
l>
30* 11 Kim, S.B. and Wang, 1978 A 4.2 Aluminum 113 Similar to above specimen. i:
S.T. m
5J)
31 11 Kim, S.B. and Wang, 1978 A 4.2 Aluminum 1/4 Similar to above specimer.. l>
S.T. Z
C
32 12 Rowlands, J.A. anc 1978 B 10-33 Al(l) 99.999 Al-; obtained from Kocb-Light (type 8013 h, batch 1);0.508 nun ::t
Woods, S.B. diarn.; reduced by rolling and drawing through diamond dies to various o
diameters, and through a varyi.ng number of dies which accounts for
reducing speci.TIlen diam. l:y il% and changes in Po; number of dies zero
for this specimen; annealed at 340°C for 3 h; Po = 0.001306 X 10- 8 51m;
values calculated from gIaphically extracted values for PT- temperature
dependent resistivity.
33 12 Rowlands, J .A. ane 1978 B 10-33 Al(l) Same as above except Po 0.00222 x 10- 8 51m; number of dies is 1.
Woods, S.B.
34 12 Rowlands, J.A. anc 1978 B 10-33 Al(l) Same as above except Po 0.00309 x 10- A n m; number of dies are 2.
Woods, S.B.
35 12 Rowlands, J.A. and 1978 B 10-33 Al(l) Same as above except Po 0.00391 X 10- 8 51 m; number of dies are 3.
Woods, S.B.
36 12 Rowlands, J .A. and 1978 B 10-33 Al(l) Same as above except Po 0.00447 x 10- 8 nm; number of dies are 4.
Woods, S.B.
37 12 Rowlands, J.A. and 1978 B 10-33 Al(l) Samens above except Po 0.00499 x 10-sUm; number of dies arc 5.
Woods, S.B.
Data Name and

Set Ref. luthor(s) Method Temp.
Ye9.r Specimen Composition (weigh~ percent). Specifications and Remarks
No. No. Used Range, K_
Designation
38 12 Rowlands. J.A. a3d 1978 B 10-48 Al(2) Similar to above specimen; Po 0.00874 x 10- 9 Qm; number of dies are
Woods, S.B. zero; run 1.
39 12 Rowlands. J .A. a:td 1978 B 10-48 Al(2) Same as above except Po 0 . 0121 x 10- 9 Qm; number of dies is 1.
Woods, S.B.
m
40 12 Rowlands, J.A. a3d 1978 B 10-48 Al(2) Same as above except Po 0.0127 x 10- 9 Qm; number of dies are 2. r-
m
WOods, S.B. o
-1
41 12 Rowlands. J ;A. aad 1978 B 10-48. Al(2) Same as above except PC} 0.0147 x 10- 9 Qm; number of dies are 4. ::D
\>loods, S.B. o
:J>
42* 12 Rowlands. J.A. and 1978 B 10-48 Al.(2) Same as above except Po 0.0148 x 10- 9 Q m; number of dies are 6. r-
Woods. S.B. ::D
m
en
Rowlands, J.A. and 0.00877 x 10- 9 Qm; number of dies are
~
43* 12 1978 B 13,20 A1(2) Similar to above specimen; Po
Woods, S.B. zero; run II.
Rowlands, J .A. and mm; Po 9

10- Qm; number
:<
~
44 12 1978 B lO-33 A1(2) Same as above except diam. ~ 0.494 0.00963 X
Woods, S.B. of dies are 1. 4.
45* 12 Rowlands, J.A. and 1978 B 10-33 A1(2) Same as above except diam. O.4~2 mm; Po 0.0102 x 10- 8 flm; number
o
\>loods, S.B. of dies are 1. 2. ""
:J>
r-
46 12 Rowlands, J.A. and 1978 B 10-33 A1(2) Same as above except diam. 0.469 mm; Po 0.0111 x 10- 9 Qm; number c
Woods, S.H. of dies are 1. 4. i:
Z
47* 12 Rowlands. J.A. a~d 1978 B 10-33 Al(2) Same as above except diam. 0.458 mm; Po 0.01174 X 10- 9 flm; number c
Woods, S. B. of dies is 1. i:
:J>
48* 13 Garland, J.C. and 1978 A 1.35-6.46 A1-1 Pure, polycrystalline 30 mID diam. rods; Po = 0.0002057 X 10- 9 Qm; Z
Harlingen, D.J. normal resistance ratio = 12000; annealed in air at 550°C for several C
~ hours; RRR = 12327; values calculated from graphically reported PT-P i:
." vs T values; voltage measured using SQUID detector. 0 :J>
::T Z
~ 49* 13 Garland, J.C. and 1978 A 1.5-4.0 Al-2 Similar to above specimen; values are calculated from P = Po + AT2
C)
:J>
(') Harlingen, D.J. using Po = 0.0002341 X 10- 8 Qm. and A = 5.4 ± 0.4 x 10- 4 nn cm K- 2 • Z
::T
CD m
~ 50* 13 Garland, J.C. and 1978 A 1.5-4.0 Al-3 Similar to above specimen; Po = 0.0002012 x 10- 8 flm; RRR 12588, en
:u Harlingen, D.J. A = 5.7 ± 0.4 x 10- 4 nn cm K- 2 m
~
51* 13 Garland. J.G. and 1978 A 1.5-4.0 Al-4 Similar to above specimen but cold-worked after annealin~; Po
J< 52* 13
Harlingen. D.J.
Garland, J.C. and 1978 A 1.5-4.0 Al-5

0.0006195 x 10- 8 nm; RRR
Similar to above specimen; Po

= 4201, A = 6.7 x 10-~ un cm
0.0000519 x 10- 9 Qm; RRR
K- •
= 5030, A
~
-
~
Z 53* 13
Harlingen, D.J.
Garland, J.C. and 1978 A 1.5-4.0 Al-6a

5.2 x 10-~ nQ em K- 2 •
Similar to AI-I; Po 0.0000944 X 10- 9 Qm; RRR = 25999. A = 4.3 x

P Harlingen, D.J. 10-" nfl em K- 2 •
J>- *Not shown in figure. .-
.-
eD
...
co ,1:11.
.-
f- TABLE 2. MEASUREMENT INFORMATION ON THE ELECTRI8AL RESISTlVITY OF ALUMINUM Al (continued)
....
....
~
~ I\)
~ Jata
Ref. Method Temp.
Name and
n
:r
Set
No.
Author(s) Year
Used Range, K
Specimen Composition (weight percent). Specifications and Remarks
CD No. Designation
~ 54* 13 Garland, J.e. and 1978 A 1. 5-4.0 AI-6b Similar to above specimen-but cold-worked after annealing~ Po
::D Harlingen, D.J. 0.00004638 x 10- 8 Qm; RRR = 5625. A'" 4.6 x la-If nn cm K-
CD
:""'
~
55* 14 Masovic, D.R. and 1978 A 933 No details given.
Zekovic, S.
J»
~
:-
56 15 K1opkin, M.N., Panova, 1977 A 2-295 99.99~ AI; RRR=5900; Po =0.00046 xlO- e Qm; values calculated from
.... G.Kh., and Samoilov, graphlcal1y reported PT-Po values which are temperature dependent
~ B.N. resistivity.
Z
~ 57* 16 Fujita. T. and 1977 A 1.51-9.72 AI-4 99.99~ AI; zone refined specimen wires 0.6 mm in diam.; annealed in
~ Ohtsuka, T. vacuum at 600°C for 2 days; all spe~imens che~ica11y etched and rinsed
...... with Us tilled water; Po = 0.000448 X 10- 8 nm; measurement done with
CD
CD
.Do
SQUID galvanometer with voltage sensitivity ±IO-l~ V; heating effects
negli;ible; data extracted from fig'.lre; a main source of error was
the sJecimen size; SQUID detector used; ~nc~rtainty about 1%.
58* 16 Fujita, T. and 1977 A 1.50-9.09 Al-Ia Similar to the above specimen except it was cold-worked; sandwiched
betwem clean_~l steets and rolled to 0.3 mm thick plate form; Po =
C
Ohtsuka, T. m
0.001355 x 10 Qm. rn
v~
59 17 Keita, M., Steinemann, 1977 c 933-1122 No details given; liquid state speclmen; data extracted from figure. I:-
S., Kunzer, H.U., and ~
Guntherodt, H.J. ii:
m
60 18 Babic, E., Krsnik, R., 1976 A 10-20 99.99~ Al from Koch Light; temperat3re controlled by helium exchange JJ)
and Ocko, M. gas a:ld - by resistance heater; Po "" 3.022 x 10- 9 Q m. ~
z
61 18 Babic, E., et a1. 1976 A 10-20 Similar to above except Po ~ 0.053 K: 10- 9 Qm. Q
:I:
62 19 Kawata. S. 1976 A 300 VIII-I 99.99~ AI; zone refined; Po = 0.000193 x 1O-9Qm. o
63* 20 Krevet, B. and 1976 A 4.2-32 Sample I Pure; polycrystalline; from Vereinigte Aluminumwerke. AG, Bonn; Al
Schauer, W. tape 3amples 0.3 x 6 mm 2 cross-section; liquid hydrogen cryostat used;
RRR = 2200; data extracted from figure.
64* 20 Krevet, B. and 1976 A 4.2-32 Sample I I Similar to above specimen; RRR = 3800.
Schauer, W.
65* 20 Krevet, B. and 1976 A 4.2-32 Sample III Similar to above specimen; RRR = 5630.
Schauer, W.
66* 20 Krevet, B. and 1976 A 5.5-32 Sample IV Similar to above specimen; RRR 89aO.
Schauer, W.
67* 20 Krevet, B. and 1976 A 4.2-32 Sample VI Similar to above specimen; RRR = 13900.
Schauer, W.
68* 21 Hartwig, K.T. and 1976 A 273 Pure; melted in induction furnace i~ high purity graphite crucibles
Worza1a, F.J. under argon; ingots from the melt (1 in. diam.) were extruded to 1/4
in. diam.; specimens were then cut to 2 in. lengths and homogenized
in aie at 873 K for 12 h, then water quenched and immersed in liquid
nitrogen for storage. -
*lfot shown in figure.
TABLE 2. MEASUREl':ENr INFORMATION ON TIlE ELECTRICAL RESISlIVlTY OF ALUMINUM Al (continued)
Data Name and

Ref. Method Temp. Specimen
Set Author(s) Year Composition (weight_percent), Specifications and Remarks
No. No. Used Range, K Designation
69 22 Cook, J.G., Moore, 1975 A 4.2-400 99.9~99 AI; specimens purchased from Cominco Ltd., Oakville, Ontario;
J. P •• Matsumura. three samples measured with three techniques; sample with RRR = 11,000
and Van der Mur, M.P. anneded at Cominco Ltd.; sample with RRR = 8500 annealed at. NRC;
sample with RRR = 950 of commercial purity; data extracted from tabu-
latec values which were obtained by passing a smooth curve approxi-
mately midway between the high and low results for the pure specimens; m
data reported were corrected for thermal expansion; author's estimated r-
uncertainty 0.8%. m
o-t
70* 23 Rapp, O. and 1975 A 318 Sample 1 Pure; <4 ppm of transition metal impurities and <36 ppm total impur- :a
Fogelholm, R. ities; rolled and drawn- into wire 0.25 mm diam.; annealed at 450°C
for 6 h. n
l>
r-
71* 23 Rapp, O. and 1975 A 318 Sample 2 Similar to above specimen. :a
Fogelholm, R. m
CJ)
72 24 Rowlands, J.A. and 1975 B 7-26 ALI 99.999 Al from Koch-Light; 1 mm diam. wires ::educed in diam. in. en
-t
Woods, S .B. Type 8013h stages by drawing through dies to final diam. of 0.02 in.; annealed
at 3LOoC for 3 h in vacuum to remove physical defects and inhibit
growth of very large crystallites which would prevent uniform drawing;
<
=i
P~ = 0.00124 x 10- 9 51 m; values obtained from graphically reported -<
temperature dependent electrical ~esistivity. Pr' o
."
73 24 Rowlands, J.A. and 1975 B 7-26 Al 1 Same as above except plastically elongated ae room temperature by l>
Woods, S.B. r-
amounts' 5-300% by drawing them through dies, or, for small strains, c:
stretching them. 3:
74 24 Rowlands, J.A. and 1975 B 7-25 Al 2 Similar to the above annealed specimen except: Po = 0.0088 X 10- 9 51m;
Z
'C:
Woods, S.B. data extracted from figure. 3:
75 24 Rowlands, J.A. and 1975 B 8-25 Al 2
l>
Same as above except cold-worked to the smallest value of Pr; data Z
Woods, S.B. extracted from figure. c
~ 3:
76* 25 Kawata. S. and 1975 A 4.2-300 99.999 Al supplied by Sumitomo Chemical Co. Ltd.; zone-refined:
."
:::r Kino, T.
l>
po1ycrystalline wire of 1 mm diam.; RRR = 12200-16200. Z
~ G')
(") 77 26 Srivastava, S.K. 1975 938 No details given. l>
:::r Z
CD
m
~ 78 27 Bradley, J.M. and 1974 A 293 99.999 AI: cold rolled to a thickness of 0.5 rom from which rectangu- (f)
::D Stringer, J. lar specimen (5 rom x 40 mm) was cut; specime~ was solution treated m
!l at 500°C and water quenched immediately prior to measurement of
resistivity.
i'
jr 79 28 Kedves, F.J., Gergely, 1973 A 26.4-947.9 99.999 Al; 50 rom long (at low temp.), 100-1200 rom long (at high temp.);
< L., and Hordos, M. wound to form & coil on a mica sheet; cold drawn (0.8-1.0 mm diam.);
....~ annealed and homogenized at 620-630°c for 1 h; double chamber cryo-
stat used; data extracted from figure; reported error ±J% •
~
Z 80* 29
P Osamura, K., Hiroaka, 1973 A 4.2,77 5N Grade 99.9999 AI: 59 grade; supplied by Asahi Metal Co.: RRR = 9700.
~
Y., and Murakami, Y.
...a.
(D
Q)
IcNot shown in figure. .....
~
0l:Io W
...&.
~ ...&.
." ~
:::r TABLE 2. MEASUREMENT INFOIUrATION ON THE ELECTRICAL RESISTIVITY OF ALUMINUM Al (continued) .pr.
'<
!II
o:::r Data Name and
Ref. Method Temp.
~ Set
No.
No.
Author(s) Year
Used Range, K
Specimen
Designation
Composition (weight_percent), Specifications and Remarks
:0
~ 81 29 Osamura, K., Hircaka, 19i3 A 3.2-200 5N Grade 99.999 AI, 59 grade; wire specimen 0.6 mm in diam.; supplied by Asahi.
C Y., and Murakami, Y. Metal Co.; RRR = 9700; low temperature unpublished data from Nakamura,
J. Furukawa, and Takamura; data extracted from figure.
....~
82* 29 Osamura. K•• et c1. 1913 A 4.2,77 0.175 Zn; specimen 50 mm x 4 mm with long projecting Hall probes and
70 ~m thick; supplied by Sumitomo Mining Co.; cold-rolled, solution
treated for 1 h at 450°C, cooled and held for 1 h at 300°C; quenched
~
z in water at O°C, and immediately immersed in liquid nitrogen.
9
.!>- 83 30 Stallard, J.M. acd 1913 976,1302 MRC VP Grade 99.995 AI; rod 5.08 cm.
..
to
Q)
84* 31
Davis, C.M., Jr.
Thompson, G.E. and

Noble, B.
1913 A 74.98.266.5 High purity; cast under argon in an induction furnace; ingots were
extruded, homogenized, and cold-rolled to 1.3 mm strip; data extracted
from figure.
85* 32 Senoussi, S. and 1973 A 1.32-4.21 Commercial

8
Commercial 5N Al wire (RRR = 1200); Po = 0.002409 X 10- Slm; geomet- c
SN- AI· rical factor of the order of 105; data taken from figure of·p...:.po/p rn
Campbell, LA.
vs TJ.
en
~
86* 32 Senoussi, S. and 1973 A 2.98-4.19 Commercial Commercial 3N Al wire (RRR = 65); Po = 43.31 nSl cm; geometrical factor '-
Campbell. LA. 3N Al of the order of 10 5 ; data taken from figure of p-Po/p vs T3. :J>
:s::
rn
87 33 Korochkina. L.N. and 1973 993 Pure; rio other details are given. j1)
Kazimirov, V.P.
:J>
Z
88* 34 Enderby, J.E. and 1973 1120 Pure. q
Howe, R.A. :x
89 35 Romanova, o. V. and Pure aluminum specimen.
o
1973 842.5-1041.3
Persion, Z.V.
90* 36 Sirota, N.N., 197-2 4.2,273 Single crystal; 60 x 4 x 3 mm; specimen axis along <110> direction;
Gostishchev, V. 1., p(273) calculated from resistance ratio of order of 6000 (assumed
and Drozd. A.A. equal to resistivity ratio) and p(4.2 K).
91* 37 Horak, J.A. and 1972 A 4.5,295 Polycrystalline wire specimen; approximately 5 cm long with a diam. of
Blewitt, T.H. 0.025 cm.
92* 38 Callarotti, R.C. and 1972 17 Bar of very common structural aluminum; 12 cm long, 9.5 rom diam;
Alfonzo,M. inductive method.
93* 38 Ca11arotti, R.C. and 1972 17 Similar to the above; resistive method.
Alfonzo, M.
94 39 Levin, E.S., Ayushina, 1972 R 1923 AV-OOO 99.99 AI; data taken from figure; contactless method.
G.D., a~d Gel'd, P.V.
95 40 Levin, E. S., et a1. 1972 R 192:i,1798 AV-OO 99.99 AI; data taken fiom figure; reported error 7%; contactless
method.
TABLE 2. MEASUREMENT INFORMATION ON THE ELECTRICAL RESIST:VITY OF ALUMINUM Al (continued)
Data Name and

Ref. Method Temp.
Set Author(s) Year Specimen Composition (weight percent), Specifications and Remarks
No. Used Range, K
No. Designation
96 41 Levin, E. S. and 1972 R 1973 AV 000 99.99 AI; data taken from figure; contactless method.
Ayushina, G.D.
97* 42 DiMe1fi, R.J. and 1971 A 4.2 Specimen No. 1 99.9999 AI; <0.03 at. ppm Ag, 0.-1 at. ppm Cu, 0.5 at. ppm Fe, 0.1 at.
Siegel, R. W. ppm Mg, 0.5 at. ppm Si: from Cominco American Inc.; ribbon shaped,
18 cm long, 0.080 cm wide, and 0.017 em thick; annealed in air at m
600 ± 5°C for zero h~ r-
m
98* 42 DiMelfi, R.J. and 1971 A 4.2 Specimen No.2 Same as above e:x:cept annealed for 5 h.
o-I
Siegel, R.W. ::rJ
(;
99* 42 DiMe1fi, R.J. and 1971 A 4.2 Specimen No. 3 Same as above e:x:cept annealed for 20 h. »
r-
Siegel, R. W.
::rJ
100* 42 DiMe1fi, R.J. and 1971 A 4.2 Specimen No.4 Same as above e:x:cept annealed for 23 h. m
tJ)
Siegel, 1. W.
~
101 42 DiMelfi, R.J. and
Siegel, 1.W.
1971 A 4.2 Specimen No.5 Same as above except annealed for 36 h. <:
102* 42 DiMelfi, R.J. and 1971 A 4.2 Specimen No.6 Same as above except annealed for 48 h.
~
Siegel, R. W. o
103 43 Alp, T., Brough, I., 1970 A 273 99.9999 AI; zone refined; 8 ppm impurities by weight; 0.508 rom diam.
""»
r-
Sanderson, S. J., a:J.d wire; quenched in ice water at O°C from 200°C. c
Entwistel, K.M. s::
Z
104 44 Radenac, A., Lacoste, 1970 R 300-900 99.995 AI; O.OOLO Mg, 0.0005 Fe, 0.0002 Cu, and 0.0002 Si; 4 rom diam. x c
M., and Roux, C. 3 rom; expansion corrected; uncertainty ±J%; contactless method. ' s::
105 45 Seth, R.S. and Woois, 1970 A 10-295 Grade 5N 99.999 AI; polycrystal1ine; obtained from Consolidated Mining and
»
z
S.B. Smelting Co. of Canada; 6 rom diam. rod drawn through steel dies to c
!- 1.5 rom diam., then etched, then drawn through diamond dies to 0.5 mm s::
~
::T
diam.; annealed for 12 h at 400°C in 10- 6 Torr atmosphere; electrical »
z
resistance ratio R(293 K)fR(4 K) = 4000; resistivity deduced from
~ P = P~ + Po. Po = 0.0007 ~Q cm. Pi(273.2 K) =. 2.429 ~Q cm, and
G)
o »
::T smoothed values of Pi(T)/Pi(273.2 K) extracted from table. z
CIt m
~ 106* 45 Seth, R.S. and Woods, 1970 A 273.2 0.12 Hg; 6mm diam. rods nade by melting freshly cleaned pellets in (J)
:D S.B. evacuated sealed quartz tubes, then drawn through steel dies to 1.5 m
11 romdiam.; etched and drawn through diamond dies to 0.5 mm diam.;
c
Q)
annea:'ed at 400·C for 12 h in 10 Torr H2 atmosphere in close-fitting
Pyrex container; residual resistivity 0.0487 ~Q em.
1
< 107 46 Bohm, R. and Wachtel, 1969 194-408 99.997% AI; impurities 0.001 Cu, 0.001 Fe., 0.001 Sit cylindrical
f!
.... E. specinen 10 mm in diam .
~
Z 108* 47 Rubanenko, I.R. and 1969 293 7 x 7 x 28 mm; neasuring :emperature assumed 20°C.
~ Grossman, M. I.
.f"
....
CO
*Not shown in figure •
0) ,J:II.
0Iloo m
!0-
....
....
MEASUREMENT INFORMATION ON THE ELECTRICAL RESISTIVITY OF ALUMINUM Al (continued) ~
J
(')
:T
nata
Ref.
TABLE 2.
Method Tenp.
Name and
0')
~
No. Used Range, K
~ No. Designation
:u 109 48 Logunov, A.V. and 1968 A 321-693 99.946 AI; 4 mm diam. x 100 mm; data taken from figure; not corrected
~
:"' Zverev, A.F. for expansion of sample; reported error <0.5%.
.~ uo 49 Wilkes, K.E. and 1966 A 77,273 99.99989 AI; polycrystalline; 0.5 ppm Cu, 0.5 ppm Si, 0.1 ppm Mg;
JD Powell. R. W. obtained from Advanced Research_Materials.; 1.225 cm diam. x 10.16 cm.
<
~
.... 111* 50 Von Bassewitz, A. and 1968 A 4.6-90.3 99.999 AI.
!-' Mitchell. E.N.
z
P 112* 51 Sharma, J.K.N. 1967 D 1.5,293 99.999 AI; polycrystalline wire specimen obtained from Aluminum
~ Laboratories; RRR = 664; 1 mm diam. x 70 cm long .
....
co
CD U3* 52 Stevenson, R. 1967 9-35 5N 99.999 AI; wire obtained from Consolidat.ed Mining and Smelting Co.;
~
received extensive deformation in the wire-drawing process and further
deformation when wound on mandrels of 0.5 in. diam. in making the
samples for the experiment; mounted samples ~nnealed at l50 a C for 4 h;
resistivity ratio = 476; residual electrical resistivity = 5.74 x
10-11 n m; data extracted from smooth curve. C
rn
en
~
U4 52 Stevenson, R. 1967 9-35 6N Similar to the above except resistivity ratio 1173; Po 2.27 x
10- 11 n m; data extracted from smooth curve.
c..
»
us . 53 99.99989 AI, 0.00005 Cu, 0.00005 S1, and 0.00001 Mg; 1.226 cm diam. x
3:
Wilkes, K.E. 1967 A 78-298 3 rn
10.16 cm-long; obtained from Aremco Products Inc.; density 2.700 g cm- !P
at 23°C;_results corrected for thermal expansion by multiplying the
room temperature dimensions by (1 + aoT) whereao is average coeffi-
»
z
cient of linear thermal expansion and T is the change from room c
temperature. :l:-
o
116 54 Busch, G. and 1967 c 883-1080 No details given.
Gunthero1t. H.J.
117 55 Boato, G., Bugo, M., 1966 A 4.2 99.995 AI; the specimen was annealed in air for one day at 610°C,
and Rizzuto, C. then quenched in iced salt water for less than a second; the measure-
ment was taken using a Keitly nanovoltmeter, whose calibration was
better than 3%.
118 56 Nobi1i, n. and 1966 A 298-773 99~99 Al, <0.005 S, 0.003 Cu, 0.003 Fe, <0.001 Mg, and <0.001 Zn;
DeBacci. M.A. cylindrical specimen; annealed at 550°C for 2 h; reported error <1%.
119 57 Neely, H. H. and 1966 20.4 99.9999 AI; specimen supplied by United Minerals Corp.; wire drawn to
Soain, A. diam. of 0.0053 cm.
120* 57 Neely, H. H. and 1966 20.4 99.995 AI; wire supplied by Aluminum Corporation of America; was drawn
Sosin, A. to 0.0053 cm diam.
111* 58 PawIek, '1. and 1966 B 4-273 Extra pure AI; 99.999 Al, 0.00024 Fe, 0.00019 Cu, 0.00015 Si,-and 0.0003 remaining
59 Rogalla, D. 99.999 . impurities; 2 mm diam. wire received, with works analysis, from
Aluminium-Hutte Rheinfelden GmbH, Rheinfelden; electrical resistivity
ratio p(273 K)/p(4.2 K) = 2210, p(293 K)/p(20.4 K) = 1130.
*lIot shown ·:'n figure.
Data Name and

Ref. Method Temp.
No. Used Range, K
No. Designation
122* 58 Paw1ek, F. and 1966 B 4-273 Very pure A1 99.994 Al,O.0024 Cu, 0.0020 Si, and 0.0012 Fe; 2 mm diam. wire
59 Rogalla, D. supplied by Vereinigte Aluminiumwerke AG, Bonn; annealed 1 h in
argon at 300°C (authors report annealing temperature as 300°C in
Fig. 5, but 400°C on p. 17 of their paper); cooling rate <50°C/h;
electrical resistivity ratio p(273 K)/p(4.2 K) = 400, p(293 K)/ m
p(20.4 K) = 328. r-
m
(')
123 58 Paw1ek, F. and 1966 B 4-273 Pure A1, 99.8673 AI, 0.0730 Fe, 0.0420 Si, 0.0140 Zn, 0.0020 Mn, and 0.0017 -4
59 Rogalla, D. A1 99.9 Cu; similar to the above except electrical resistivity ratio :D
p(273 K)lp(4.2 K)_ = 55.2, p(293 K)/p(20.4 K) = 57._1. o
-»
124 58 Pawlek, F. and 1966 B 4-273 Al 99,7 99.814 AI, 0.1100 Fe, 0.0580 Si, 0.0100 Zn, 0.0040 Ti, 0.0020 Cu, r-
59 Rogalla, . D. and 0.0020 Mn; similar to the above except ~lectrica1 resistivity :D
m
ratio p(273 K)jp(4.2 K) • 28.3, p(293 K)/p(20.4 K) = 28.6. en
125 60 Moore, J.P., McElroy, 1966 A 100-360 99.999 AI; RRR = 52n; cy~indrical specimen machined from a stock ob-
en
-4
D.L., and Barlsoni, M. tained from Reynolds Aluninum Co.; estimated uncertainty ±0.6%. <:
126* 61 Wiser, N. 1966
=4
973 No details given. ~
127 62 Powell, R.W., Tye, 1965 A 313-673 99.993 od obtained from British Aluminum Co.; specimen 2.53 cm
o
"T1
R. P., and Woodman, in dial and 20.4 cm long. »
r-
M.J.
c
128 62 Powell, R.W., et al. 1965 A 323-873 99. 3 AI; from British Alu~inum Co.; specimen 2.81 cm in diam.-and
;:
:m long; smoothed values from table; longitudinal heat flow Z
paratus used. c
;:
129 62 Powell, R.W., et al. 1965 A 123-323 99.993 A1; fron British Aluminum Co.; specimen 8.0 x 0.44 x 0.44 cm; »
z
smoothed values from table. .
c
~ 130 63 Powell, R.W., Tye, 1965 A 973-1273 99.993 AI; fron Britj.sh Aluminum Co.; in molten state: smoothed values i:
." R.P., and Metcalf, from table. »
::r
S.C. z
~ C)
»
n
:::r 131 64 Forsvoll. K. and 1964 4.2 Specimen 1 99.99 AI; containing 0.004 Zn; zone refined; bulk resistance ratio z
CD Holwech, 1. R293:R4.2 = 26500. rn
;:J en
::D 132* 64 Forsvoll, K. and 1964 4.2 Specimen 2 99.999 A1; containing 0.001 Zn; zone refined; bulk resistance ratio
m
,
~
C
I»
133* 65
Holwech, I.
Frois, C. and
Dimitro'T. O.
1964 20.4
R29 3 !R4 • 2 = 26500.
99.95 AI, 0.05 total impurities; aluminum purified by 15 passages in

zone refinement; values measured immediately after deformation in
~ liqu~d hydrogen; data ex:racted from figure.
~ 134* 65 Frois, C. and 1964 20.4 Simi~ar to above specimen.

Z Dimitroy. O.
P *Not shown in figure.
~
....
CD
....a.
....a.
~
CD
~ .....
~
....
....
"U
~
TABLE 2. MEASUR8fENT INFORMATION ON THE ELECTR]CAL RESISTIVITY OF ALUMINUM Al (continued) ~
0)
~
o Data
Ref. Na~e and
~ Method Temp.
Set Althor(s) Year Specimen Composition (weight percent)! Specifications and Remarks
~
No. Used Range, K
No. Designation
::a 135 66 Fenton, E.W., Rogers, 1963 2-28 Al 3 99.9999 AI; zone refined sbeet 0.010 in. thick x 0.125 in. diam. rods;
~ J.S., a~d Woods, S.B. supplied by Research Labs. of Consolidated Mining and Smelting Co. of
j Canada, Trail, British Columbia; acid-etched to remove surface con-

tamination before annealing; rods passed through rollers producing a
square cross section that degenerated to rhomboid after several
~
:-
passes; specimen drawn once through steel die to restore cross. sec-
.... tion to nearly round shape about half way through reduction; further
~ etched to remove surface contamination; annealed in air at 550°c for
z 10 minutes; Po = 0.00903 X 10- 8 n m.
?
:-- 136 66 Fenton. E.W., et a1. 1963 2-21 Al 6 Same as the above except Po = 0.000568 X 10- 8 n m.
....
U)
CD
.10.
137 67 Purcell, J.R. and 1963 A 4-30 99.9983 pure 99.99B3 AI; specimen (approx.) 0.004 in. x 0.25 in. x 40 in.; supplied
Jacobs, R.B. - by Consolidated Aluminum Co., Jackson, T~nnessee; annealed at 350°C
for 2 h; R(300)!R(4) = 1,370; sample completely immersed in bath of
either liquid helium or liquid hydrogen during measurements; resis-
tivities computed from resistance ratios,-value used for room tem-
perature resistivity 2.7 x 10- 6 n em (Rutter, .T.W. and Reekie, J. C
[81]; reported error 10%.
m
UJ
138 67 Purcell, J.R. and 1963 _A 4-30 99.999 pure -99.999 AI; approximate specimen dimensions 0.030 in. x 0.125 in. x ~
C-
Jacobs. R.B. 40 in.; supplied by A.I.A.G. Metals Inc., New York, New York; annealed
at 350°C for 2 h; R(300)/R(4) = 2,600; sample completely immersed in
»
i:
bath of either liquid helium or liquid hydrogen during measurements; rn
resistivities computed fro~ resistance ratios, value used for room
temperature resistivity 2.7 x 10- 6 n em (Rutter, J.W. and Reekie, .J.
In
J>
{Sl]; reported error 10%. Z
C
139* 68 Aleksandrov. B.N. and 1963 A 273-650 99.9 AI, 0.05 Si, 0.03 B; ~273 K = 2.417 X 10- 8 n m assuned; data of ::J:
D'yakov, I.G. Pochapsky -[96); error in resistance ±1%. o
140* 68 A1eksandrov, B.N. and 1963 A 14-290 Single crystal with wire aKis coincident with either principal axis
D'yakov, LG. or [110] direction; wire diam. 10-15 mm; data taken from figure.
l!.l+ 68 Aleksancrov, B.N. and 1963 A 14-261 Polycrystalline Al wire with axis coincident either with the principal
D'yakov, I.G. axis or with [110] direction; purified by zone melting; P4.2!P293
3.4 x 10- 5 ; below <14 K, p ~ T 5 ; data extracted from fig~re.
~L2* ~9 Swanson, M.L., 1962 A 1.8 1 99.99 AI; strip specimen 0.003 in. thick; annealed 0.010 in. wires
Piercy, G.R., and rolled at room temperature; annealed.
~{acKinnon~ D. J •
143* 69 Y~anson, M.L., et a1. 1962 A 1.8 Similar to the above speciDen.
144* 69 Swanson, M.L., et al. 1962 A 1.8 3 Same as above specimen.
145* 69 Swanson, M.L., et al. 1962 A 1.8 4 99.999 AI; strip specimen 3.008 in. thick; annealed 0.013 in. wires
rolled at room temperature; annealed.
146* 70 Korol 'kov, A.M. and 1962 294-1073 No details given.

Shashko'i. D.P.
TABLE 2. MEASUREMENT INFORMATION ON THE ELECTRICAL RESISfIVITY OF ~LUMlNUM Al (continued)
Data Name and

Ref. Method Temp. CompositiJn (weight percent), Specifications and Remarks
Set Author(s) Year Specimen
No. Used Range, K
No. Designation
147* 71 Sirota, N.N. 1962 20-372 No details given; data taken from figure.
11+8 72 Powell, R.L., Hall, 1960 A 4-76 Single crystal 99.995 AI, originally; single crystal; the JM 340 rod made from
W•.T., and Roder, F.M. High purity Johns)n-Matthey stock by Horizons, Inc., Cleveland, Ohio; ground to
3.66 Em diam.; ~hemical etching after the reduction in diameter indi-
cated the material was still a single crystal; after the last fabri- m
catio~ the rod Nas annealed in vacuum at about 400°C for 2 h; data r-
extra:ted from smooth· curve; reported error 2%. m
o
Hedgcock; F. T. , . . Muir, 1960 <0.002 Cu, <o.on Fe, <0_.002 Mg, <0.001 Mn, <0.001 Si; prepared by
-I
149 73 A 2.7-26 GKP ::u
W.B., and Wallingford, the Aluminum Co. 9f Canada; cold-rolled; annealed ~n helium at 300°C (;
E. for 2~ h; values calculated from graphically reported p/Paoo values
using Paoo ~ 2.77 x 10- 8 ~ m; reported error 0.5%.
»r-
::u
150 74 Simmons, R.O. and 1960 287-928 High purity Al 99.995 AI. 0.003 Cu, 0.001 Fe, and 0.001 5i; material donated by m
(J)
Balluffi, R.W. Alumi~um Co. of America; annealed a few degrees below 933 K for sev-
: eral days; swag=d aad drawn into 0.43 mm diam. wire; R(273 K)/ Cii
R(4.2 K) = 414 after annealing and essentially the same value for -I
the starting material; resistance ratios corrected for thermal <:
expansion from ,:rude dimensional measurements on specimen p(20°C) =i
2.70 1: 0.12 jJn ':!m; therefJre, standard value of p(20°C) = 2.6548 -<
]In cm. o."
151 75 DeSorbo, W. 1958 A 1-20 Zone refined Spect:oscopic c()mposition: "trace" of Cu, specimen 0.020 in. diam. x »
r-
7-9 f:. long; o')tained fnm W. E. Trogert; sjngle crystal obtained C
af ter 6 passes of zone-reEi~ing, machined, swaged, and then drawn; 3:
between each swaging and each drawing, metal pickled in warm 15%
NiOH soluti.on; drawing done with diamond die; heat treatment:
Z
c
annealed for se'Teral hours at 550°C and cooled 2-3°C/min. 3:
152 75 Same sample as above except heat treatment air quenched from 350°C.
l>
DeSorbo, W. 1958 A 1-20 Zone refined Z
C
~
153 75 DeSorbo, W. 1958 A 1-20 Zone refined Same sample as above except heat treatment air quenched from 550°C. s:
." l>
::r 154 75 DeSorbo, W. 1958 A 1-20 Zone refined Same sample as above except heat treatment fast quenched from 510°C. Z
'< G)
91
o 155 76 Mikryoko'T, V.E. 1958 K 339-795 Pure; polycrystal; data f:-om figure; error 1-1.5%; Kohlrausch method. l>
Z
if 156 77 Mikryoko'l. V.E. 1957 K 338-797 99.99 AI; polyc:-ystalline.
m
? (J)
m
::D
157 78 Roll, A., Motz, H., 1957 R 933-1473 Pure liquid AI; data is r~presented by linear equation P (in ]In cm)
~ and Felger, H. 0.0146oT(K) + 10.56.
J 158* 79 Broom, T. 1952 B 90-373 99.996+ AI; impurities 0.')02 Mg, <0.001 Si, <0.0005 Cu, Fe; wire
drawn from 0.183 cm to o. »56 cm diam. then annealed at 500°C for 2 h
~
....
and furnace cooled; Kelvin double bridge meth~d •
~
159* 80 Andrews, F.A •• Webber, 1951 A 4.2,273 Al I 99.996+ AI, 0.001 Mg, 0.001 Si, 0.0006 Fe, 0.0004 Cu, and 0.0004 Na;
z R.T., and Spohr, D.A. single crystal rods, 0.15 in. diam. x 4 in. long; from Alcoa; Po
9
0.00304 X 10- 8 Q m; Wenne: potentiometer; repo.rted error <2%.
~~
.... *Not shown in figure • .....
.....
f ~
CD
~
~ ~
." c.n
::r TABLE 2. MEASUREMENT INFOR~TION ON THE ELECTRICAL RESISfIVITY OF ALUMINUM AI (continued) o
'<
"n
::r
CD
Data
Set
Ref.
A11thor(s) Year
Me tho:! Teup.
Name and
? No. Used Rang:!, K
No. Designation
:a
160* 80 = 0.00385 ~ 10- 8 n m.
~ Andrews, F.A., et al. 1951 A 4.2,273 Al II Similar to the above specimen; Po
o 161* 80 Andrews, F.A., et al. 1951 A 4.2,273 A1 III 99.995+ AI, 0.002 Mg, 0.001 Si, and trace Cu, Fe, and Na; po1ycrystal-
J< line; from Johnson and Matthey; rods 0.15 in. diam. x 4 in. long;
Po c 0.00551 X 10- 8 n m.
fi!.
162* 81 Rutter, J.W. and 1950 20-!97 H-S brand 99.999 AI; polyerystalline; rod specimen; fro~ Johnson, Matthey Ltd.;
~ Reekie, J. H-S bcand; not cold worked.
z
p
163* 81 Rutter, J.W. and 1950 20-297 H-S Same as the above specimen except percent reduction of area was
...
~
CD
Reekie, J • 17.9%, i.e •• cold worked from annealed state by drawing through
diamond dies at uniform~peed.
CI)
~
164* 81 Rutter, J.W. and 1950 20-297 H-S Same as the abo're specimen except percent redllction of area was 40.4%.
Reekie, J.
165* 81 Rutter, J.W. and 1950 20-~97 H-S Same as the abo'Te specimen except percent redllction of area was 60.2%. om
Reekie, J. tJ)
166* 81 Rutter, J.W. and 1950 20-Z97 H-S Same as the abo're specimen -except percent redllction of area was 83.1%. ~
Reekie, J. c...
»
3C
167* 82 Powell, H. and 1942 273 99.99 A1; 0.4 Cll x 2.5 em x 12 cm; electrically refined aluminum from m
Evans, E.J. Aluminum Industries. A. G. Nenhansen. Switzerland; specimen heated up In
to the annealing temperature and maintained at that temperature from
2-3 weeks. specimen then allowed to cool slowly to room temperature; »
z
resistivity was measured at 273 K, specimen was then heated in f~rnace
and previ9us annealing temperature was contin-lled for abDut 3 weeks;
c
:1:_
after cooling the resistivity of each specime~ at 273 Kwas again
determined, this process was continued until ~o change in resistivity
o
at 271 K was found upon further annealing; deasity 2.71 g em-s.
168* 82 powell, R. and 1942 273 Same as the above specimen before annealing.
Evans, E.J.
15?* 83 Taylor, C.S., Willey, 1938 293 High purity 99.9960 Al (by difference), 0.0020 Si, 0.0010 Cu, 0.0003 Ca. 0.0003
L.A., Smith, D.W., Mg, 0.0003 Na, and 0.0001 Fe; specimen 14 gaga sheet, 1 in. wide,
and Edwards, J.D. 24 in. long; produced by Compagnie des Produits Chimiques et
Electrometallurgiques d'Alais Froges et Camar;ue; electrolytically
refined notch-bar ingot remelted in graphite crucible, ~ast in sheet
ingot 1.5 in. thick, cold-rolled to 1 in. thi:k, surface of slab
removed by mach~ning. and further cold-rolled.
170* 84 Eucken, A. and 1935 273.2 99.7 A1.

Warrertrup, H.
171* 85 Kapitza, P. 1929 A 83 All 99.951 AI, 0.02~ Cu, 0.013 Si, 0.012 Fe, O.OOZ Ti, O.OOl Vn; wire
speciaen 0.17 rnn in diam. from American Alumiaum Co.; resistance ratio
R(290 K)/R(91 K} = 8.77; units not explicitly given, presume they are
in n em.
Data Name and

Ref. Method Temp.
No. Used Range, K
No. Designation
172* 85 Kapitze, P. 1929 A 88 AlII Spectroscopic comparison with All showed AlII somewhat more impure
than All' chief impurity copper; strip specimen 0.1 mm thick and
about 0.5 rom wide; from Aluminum Co. of America, gift of Dr. Chadwick;
resistance ratio R(290 K)/R(91 K) ~ 7.09; units not explicitly given.
presume they are in Q cn:.
m
173* 85 Kapitza. P. 1929 A 88 AlIII Spectroscopic comparison showed AlII! somewhat more impure than AlII,
....
m
copper chief impurity; wire specimen 0.15 in diam.; from~artmann o-t
and Braun; resistance ratio R(290 K)/R(91 K) ~ 7.14; units not
explicitly given t presu~e they are in Q cm. ::D
(;
l>
174* 85 Kapitza, P. 1929 A 88 AlIII The above specimen after magnetoresistivity measurements performed
with magnetic field perpendicular to current; resistance ratio
....
::D
R(290 K)/R(88 K) = 8.26; units not explicitty given,presume they m
are in Q cm. (J)
175* 86 Staebler. J. 1929 89-476 Pure.

en
-t
176* 87 Gruneieen. E. ane 1927 A 21. 2-273.2 Aluminum 1 Rather pure; source Alurrinum Co. of America; turned into small rod
<
=i
Goens, E. from coarse-grained casting; annealed in vacuum at 300°C for 2.5 h; -<
thermal resistivity 0.0500 and 0.289 Wcm-1K- 1 at 21.2 and 83.2 K, o."
respectively; Wiedemann-Franz-Lorenz number 1.77 and 1.27 x 10- 8
Q W K- 2 at 21.2 and 83.2 K, respectively.
....cl>
177* 87 Gruneisen. E. ane 1927 A 21.2-273.2 Al 3 Same as above; grain size ~-15 rom long; drawn and annealed, then
Goens, E. stretched 2.5%, and recrystallized by annealing thermal resistivity - 3:
0.0840 and 0.290 W cm-1F.-1at 21.2 and 83.2 K, respectively; Wiedemann:- Z
Franz-Lorenz number 1.97 and 1.32 x 10- 8 W K- 2 at02l.2 and 83.2 K, c
respectively.
3:
l>
178* 87 Gruneisen. E. and 1927 A 21. 2-273.2 Al 100 Technically pure; source unknown, commercial conductor; annealed in Z
Goens; E. vacuum at 250°C; thermal resistivity 0.341 and 0.374 Wcm-1K- 1 at 21.2
C
!-
and 83.2 K~ respectively; Wiedemann-Franz-Lorenz number 2.18 and s:
."
::r 1.47 x 10- Q W K- 2 at 21.2 and 83.2 K, respectively. l>
Z
~ C)
o::r 179* 87 Gruneisen, E. and 1927 A 21. 2-273.2 Al 101 Same as above; after annealing stretched 3% and recrystallized by l>
CD
Goens, E. annealing; thermal resistivity 0.470 and 0.408 Wcm-1K- 1 at 21.2 and Z
~ 83.2 K, respectively; Wiedemann-Franz-Lorenz number 2.20 and 1.55 x m
(J)
:D 10- 8 n W T- 2 at 21.2 and 83.2 K, respectively; measuring length = 2 m
crystal grains.
11
Ii' 180* 87 Gruneisen, E. and 1927 A 21. 2-273.2 Al 21 Moderately pure; single crystal; grown by recrystallization; thermal
jr Goens, E. resistivity 0.730 and 0.481 Wcm-1K- 1 at 21.2 and 83.2 K, respectively;
Wiedemann-Franz-Lorenz number 2.20 and 1.66 x 10- 8 ~ W K- 2 at 21.2
~.... and 83.2 K, respectively •
,!A) 181 88 Matuyama, Y. 1927 959-1198 Chemically pure; melting point 931.65 K, r 2.58 mm, Q, 62.3 mm,
Z = 25.5 x 10- 6 •
crem
P
.f'o *Not shown in figure.
-.
iD -.
C»
~
en
-.
....,
~
TABLE '2. MEASUREMENT INFORMATION ON THE ELECTRICAL RESlS'CIVITY OF ALUMINUM Al (continued)
Data Name and

Ref. Method Temp. Specimen
Set Author(s) Year Composition (weight percent), Specifications and Remarks
No.
No. Used Range, K Design<1tion
182* 89 Smith, A.W. 1925 B 296.2 99.97-1- AI; 1.9 em diam. x 10 em long; specimen from Aluminum Co. of
America.
183 90 Scb.\)f:i:~ld. F.B. 1925 A 289-814 99.7 Ai; free from discontinuities between core and surrounding
layers, inclusion of dross, o1l:idized skin, a.nd unsoundness; supplied
by Bri.tish Aluminium Co., ltd.; 6.75 in. diam. billets cast from a
maximum temperature of 973 K, annealed at 773 K for 2.5 h, eJ{truded
at 693 K to 0.75 in. diam.; annealed at 723 K for 2.5 h; density
2.70 g cm- 3 at 294-K; -reported er-ror 1%.
184* 91 Halborn, L. 1921 273,293 Al IV 99.59 A.1; 0.22. 5i, a.l~ Fe, and 0.01 C.
185* 91 Halborn, L. 1921 273,293 A1 IV Same as the a.bove except sFecimen was annealed.
186* 91 Halborn, L. 1921 273,293 Al VI 99.9 AI, 0.06 Cu, 0.02 Si, and trace of _Fe; wire 1 rom in
diam. and 7.3 m wound on porcela.in tube; material IV
above purified, drawn by Heraeus.
o
",
(f)
187* 91 Holhorn, L. 1921 273,293 AI-vi Above specimen annealed for a long time at 250°c.
~
c...
188* 92 RolborIl, L. 1919 23-195 99.6 bl, 0.4% impurities; polycrysta11ine. »
189
3:
93 Bornemann, K. and 1914 973-1573 Pure aluminum specimen Was obtained from Neubausen ",
Wagenmann, K. .sn
190* 94 Wolff, F .A. and 1911 293 99.SZ~9-9.60 Ai, 0.26-0.34 Si, and 0.14-0.15 Fe; commercial hard-drawn
»
z
Dellinger. J.H. alumin.um wire; density 2.7C g cm-
3
o
::I:
191 95 Niccolai, G. 1908 8~-673 Wire specimen obtained from Finna C.A.F. Kahlba1lln; 0.5 mJiJ diam. x 8-ffi- o
long.
*Not shawnin figure.

TABLE 3. EXPERIMENTAL DATA ON THE ELECTRICAL RESISTIVITY OF ALUMINUM Al
8
[Temperature, T, K; Electrical Resistivity, p. 10- ~ m]
T p T T P T P T P T P
DATA SET 1* DATA SET 4 DATA SET 8 kont. »~ DATA SE':.' 13 (cont,)>" DATA SET 18* DATA SET 21 (cont.)*
4
1.600 0.93577 x 10- 2.631 0.69215 x 10-1+ 3.770 1. 3720 3.593 2.9857 1.294 110.640 x 10-1+ 2.166 22.461
1. 650 0.93631 3.796 0.73259 3.978 1.3836 3.785 2.9967 1.535 110.642 2.620 22.470 m
1. 700 0.93686 4.221 0.75419 x 10-1+ 4.132 1.3929 3.978 3.0090 1.774 110.645 3.016 22.481 r
1. 755 0.93750 4.220 1. 3985 x 10-1+ 4.133 3.0198 10-' 1.990 110.648 3.402 22.496 m
X
3.699 22.509 0
1.800 0.93804 DATA SET 5* 2.167 110.651 -I
1.850 0.93867 DATA SET 9 * DATA SET 14* 2-.611 110.661 3.945 22.523 ::0
10- 1
1.904 0.93937 2.362 0.68624 x 10- 4
3.011 110.675 ~.211 22.540 ,
0
1.950 0.94001 2.582 0.69098 1.950 1. 3135 x 10-:-" J.501 2.9268 x 10-1+ 3.400 110.694 l>
2.000 0.94073 2.728 0.69456 2.000 1. 311~3 1. 700 2.9290 3.800 110.721 DATA SET 22* r
2.050 0.94148 2.989 0.70186 2.050 1.3151 1.800 2.9303 4.200 110.755 x 1.0-1+ ::0
2.100 0.94226 3.1E75 0.70819 1.5 15.4 x 10-1+ m
2.145 0.94299 3.318 0.71501
2.101 1.3160 1.900 2.9317
DATA SET 19* 4.1 15.4 en
2.171 1.3172 2.000 2.9332 U;
2.156 0.94318 3.556 0.72343 2.329 1.3200 2.171 2.9362 6.2 15.9
17.0 -I
2.167
2.170
0.94336
0.94341
3.797
3.997
0.73302
0.74195 x 10-1+
2.468
2.80
1.3232
1. 3323 x 10-"
2.360
2.578
2.9402
2.9452
1.224
1.443
6.-6282 x 10-1+ 8.0
6.6298 9.7 18.1 <:
2.171 0.94343 x 10-1+ 1.600 6.6314 11.6 19.2 =i
DATA SET 6*
2.726 2.9497
1.773 6.6332 13.3 20.8 -<
DATA SET 10 * 2.988 2.9584 0
DATA SET 2* 3.380 2.9749 1.989 _ 6.6361 15.5 23.5
1. 298 0.93306 x 10-1+

4.1~4
4.2L4
0.74837 x 10-1+
0.753804 x 10-1+
1.292
1.402
1. 3060 x 10-"
1. 3069
4.221 3 .-0264 x 10-1+ 2.167
2.628
6.6388
6.6481
17.4
19.0
25.6
28.8 "
l>
r
1. 302 0.93308 1.501 1. 3079 DATA SET 15* 3.019 6.6594 21.4 33.1 c::
1. 322 0.93324 DATA SET 7* 1.541 1.30.83 3.407- 6.6742 23.9 40.0 !:
1.355 0.93351 1.601 1.3090 4.209 3.0254 x 10-" 3.793 6.6935 25.7 46.4 Z
1. 362 0.93356 1.HO 0.67147 x 10-1+ 1.650 1. 3095 4.101 6.7066 27.8 55.4 c::
1.363 0.93358 1.151 0.67154 1. 701 1. 3101 DATA EET 16 * 4.206 6.7198 x 10-1+ 29.5 65.5 !:
1.402
1.453
0.93390
0.93436
1. 2L5
1.258
0.67176
0.67231
1. 750 1.3107 31.4
32.2
79.9
86.8
»
Z
1.800 1.3114 1. 254 2.9246 x 10-1+ DATA SET 20*
1.500 0.93479 1.4(1 0.67316 1.850 1.3121 1. 302 2.9250 34.4 109.0 0
!- 1.550 0.93526 1.5(0 0.67406 1.900 1. 3128 x 10-" 1.353 2.9254 1.371 6.0091 x 10-1+ 36.0 129.0 !:
."
:r
2.171 0.94341 1.6Cl 0.67506 1.402 2.9259 1.663 6.0118 36.5 135.0 »
'< 2.647 0.95304 1.7Cl 0.67616 DATA.SET 11* 1.541 2.9272 1.931 6.0151 37.6 153.0 Z
!-' 2.647 39.5 184.0 G')
0.95297 1.8Cl
0
:r 2.905 0.95982 1.9Cl
0.67737
0.6]868 1.253 1. 3056 x 10- 4
1.601 2.9279 x 10-1+ 2.102
2.613
6.0176
6.0277 41.6 222.0 x 10-1+ »
Z
CD 3.149 0.96749 2.0Cl 0.68014 1.289 1.3059 DATA SET 17* 3.022 6.0392 m
? 3.401 0.97660 2.1Cl 0.68168 1.352 1.3065 3.395 6.0534 DATA SET 23* en
:u 3.646 0.98661 2.172 0.68286 x 10-1+ 1.451 1. 3074 x 10- 4 1.522 106.801 x 10- 4 3.803 6.0737 m
CD
3.842 0.99557 4.193 6.0981 1.5 1. 60 x 10-1+
:'"' 1. 763 106.804
0 4.042 1. 0056 DATA SET B* DATA SET 12* 1.986 106.681 4.229 6.0995 x 10-1+ 4.3 1.63
S» 1. 0092 x 10-" 5.9 1.12
4.106
p- 2.578 1. 3260 x 10-1+ 4
2.162 106.811
DATA SET 21* 8.2 1. 68
2.049 2.9341 x 10- 2.610 106.821
<
0 DATA SET 3* 2.725 1.3300 2.100 2.9349 x 10-" 2.994 106.834 10.1 1. 70
:- 2.986 1. 3382 1.241 22.449 x 10-::1+ 11.8 2.25
.... 1.600 0.93577 x 10-1+ 3.186 1.3L54
3.389 106.853
1.521 22.452 13.6 3.33
!-'~ DATA SET 13* 3.389 106.852
z 2.171 0.94341 x 10- 4 3.378 1. 3532 3.80 106.879 1.762 22.454 15.6 3.88
!=> 3.596 1. 3632 3.183 2.9662 x 10- 4 4.218 106.916 x 10-1+ 1.982 22.458 18.8 6.57
!J. *Not shown in figure. -&.
cD
Q)
-&.
U1
.jio, W
~
........
."
:r U'I
~
'< TABLE 3. EXPERIMENTAL DATA ON THE ELECTRICAL RESISTIVITY OF ALUMINUM Al (continued)
"n
:r
et
T T T
T P T P T P P P
~
:JJ
~ DArA SET 23 (cont.~* DATA SET. 25 (cont.)* DATA SET 27 (cont.)* DATA SET 30* DATA SET 36 (cont.~ DATA SET 41 (cont.)
C
I» 20.7 ~.24 12.1 7.55 4.1 12.7 4.2 5.517 x 1O-~ 20 53.5 17 154.0
§t 23.1 H.9 14.2 9.17 5.7 12.7 25 66.0 20 160.0
< 25.0 B.3 16.3 10.2 8.0 13.8 DATA SET 31 32.8 118.0 x 10-~ 25 176.0
....t! 26.7
23.1
24.1
31).5
17.9
20.7
12.4
14.5
9.7
11.2
14.9
15.5 4.2 6.706 x 1O-~ DATA SET 37
32.8
47.9
234.0
555.0 x 10- 4
~
Z 29.2 37.4 21.8 17.2 13.0 17.1
P 31.1 5').2 23.9 20.4 15.4 19.2 DATA SET 32 10 50.7 x 10- 4 DATA SET 42
:--
....
32.2 6l.3 26.0 28.4 17 .6 21.0 13 51.9
.CO
C»
33.6
34.7
35.6
37.1
75.7
85.8
9:).0
12l.0
27.7
29.7
31.7
33.1
34.7
47.0
60.8
74.1
19.3
21.7
23.9
25.7
24.0
28.8
34.7 .
40.0
10
13
17
20
14.3 x 10-"
15.9
19.1
20.6
17
20
2S
32.8
54.9
58.9
72.5
126.0 x 10-~
10
13
11
20
-149.0 x 10- 11
151.0
156.0
161.0
39.3 155.0 34.9 91.6 27.5 48.5 25 23.7 25 179.0
41.1 195.0 36.7 116.0 29.9 60.2 32.8 85.9 x 10-~ DATA SET 38 32.8 241.0
42.0 217.0 x 1O-~ 39.0 151.0 31.7 73.5 47.9 570.0 x 1O-~ C
40.4 182.0 x 10- 4 32.6 82.0 DATA SET 33 10 89.4 x 10-~ rn
tn
..»c...
DATA SET 24* 34.7 102.0 - 13 92.5 DATA SET 43
DATA SET 26* 36.0 119.0 10 22.9 x 10-~ 17 98.2-
1.5 3.73 x 1O-1! 37.5 139.0 13 24.1 20 105.0 13 92.1 x 1O-~
4.4 3.23 L5 9.56 x 10-1! 39.5 176.0 17 27.2 25 123.0 20 107.0 x 10-~ »
5.5 3.77 4.3 9.59 41.5 218.0 x 10-~ 20 31.0 32.8 182.0
rn
7.3
10.0
L32
4.35
5.7
6.6
10.6
10.6 DATA ::ET 28
25
32.8
43.6
95.4 x 10-"
47.9 509.0 x 1O-1! DATA SET 44
..tn==
1202 4.90 8.0 10.7 DATA SET 39 10 98.0 x 10- 4 »
Z
13.9 5.45 9.0 11.2 1.5 1.02 x 10-1.! DATA SET 34- 13 100.0
15.8 5.53 10.3 122.0 x 10-~ 106.0
C
11. 7 4.2 1.08 10 17
17.9 3.68 13.0 13.4 6.0 1.27 10 31.5 x 10-~ 13 124.0 20 112.0 :x:
19.6 H.2 14.6 15.0 7.5 1.49 13 32.6 17 129.0 25 129.0 0
21.5 13.5 17.6 17.7 8.5 1.63 17 35.6 20 134.0 32.8 187.0 x 10-·
23.5 10.1 19.5 20.9 10.0 1.96 20 39.3 25 151.0
25.4 21. 5 21.3 23.5 12.5 2.64 25 51. 7 32.8 208.0 DATA SET 45*
27.1 27.3 22.8 27.3 15.0 3.70 32.8 102.0 x 10-~ 47.9 528.0 x 10-"
29.3 3LO 24.7 31.5 17 .5 5.14 10 103;0 x 10-~
30.6 43.0 26.5 38.4 20.0 7.62 DATA SET 35 DATA SET 40 13 106.0
32.8 65.6 27.7 43.2 22.5 11.4 17 111.0
33.1 63.2 29.2 51.2 25.0 17 .8 10 39.7 x 10-~ 10 128.0 x 10-" 20 112.0
34.2 n.9 x 10- 4 30.3 57.0 27.5 28.5 13 40.7 13 130.0 25 133.0
31. 7 66.6 30.0 43.4 17 43.6 17 135.0 32.8 189.0 x 10-~
DATA SET 25* 33.9 87.3 32.5 64.6 20 47.6 20 140.0
36.1 113.0 35.0 92.1 25 60.4 25 157.0 DATA SET 46
1.5 5.32 x 10-' 37.8 137.0 37.5 130.0 32.8 112.0 x 10-~ 32.8 214.0
4.3 5.35 39.8 173.0 40.0 175.4 x 10-~ 47.9 534.0 x 1O-~ 10 112.0 x 10-~
5.1 5.36 41.5 210.0 x 10-~ DATA SET 36 17 119.0
6.8 0.44 DATA SET 29 DATA SET 41 20 125.0
7.5 0.44 DATA SET 27* 10 45.4 x 10-~ 25 141.0
3.9 0.46 4.2 5.80 x 10-~ 13 46.5 10 148.0 x 10-~ 32.8 200.0
10.5 7.54 1.5 12.7 x 1O-~ 17 49.4 13 150.0
TABLE 3. EXPERIMENTAL DATA ON THE ELECTRICAL RESISTIVITY OF ALUMINUM AI (continued)
T p T T P T P T T P
P
DATA SET 47* DATA SET 48 ~cont. ~* DATA SET 54* DATA SET 58 (cont.)* DATA SET 63 (cont.~* DATA SET 66 (cont.)*
10 119.0 x 10-~ 5.41 2.238 1.5 4.65 x 10-'+ 3.69 13.61 15.8 18.2 7.66 3.10
13 121.0 5.52 2.2~4 2.0 4.66 4.02 13.63 17.8 _ 20.7 10.0 3.71
17 125.0 5.61 2.255 3.0 4.68 4.26 13.64 19.8 23.9 12.1
25 148.0 4.01
5.72 2.257 4.0 4.71 x-Hi-It 4.65 13.66 21.6 28.6
32.8 205.0 x 10-' 5.81 2.275
13.8 4.95 m
5.38 13.75 23.6 35.9 17 .8 8.09 r-
5.9! 2.2B4 DATA SET 55* 6.23 13.77 25.5 42.3 19.6 10.6 m
DATA SET 48* 6.OL 2.294 6.41 13.85 27.6 51.8 21.6
0
-13.7 -t
6.l! 2.3D1 933 24.2 7.20 13.92 29.6 65.4 23.7 l:J
1.35 2.068 x 10-'+ 19.1
6.23 2.316 7.63 14.03 31. 2 79.0 x 10-'+
1.46
25.7 25.4 0
1.55
2.069
2.071
6.35
6.4?
2.323
2.339 x 10-'+
DATA SET 56 8.33
8.83
14.09
14.19 DATA SET 64*
-27.6
29.5
34.6 »
r-
47.6
1.66 2.073 2 4.6 x 1O-~ 9.09 14.28 x l[)-'+ 31.3 61. 3 x 10-'+ l:J
1. 78 2.077 DATA SET 49* 15.05 7.9 4,21 6.62 x 10--" m
1.86 2.079 20.08 12.5 tJ)
DATA SET 59 7.05 6.92 DATA SET 67*
1.95 2.080 1.5 2.35 x 10- 11 25.00 23.2 9.77 7.84 en
-t
2.07 2.081 2.0 2.36 30.45 55.7 973.6 24.4 U.8 8.78
2.18
2.29
2.083
2.085
3.0
4.0
2.39
2.43 x 10-"
40.42
295
195.2 x 10-"
2.66
997.7
1023.6
24.8
25.1
13.8 10.0
4.20
6.05
1.86 x 10-"
1.85 <
=i
15.8 11.2 8.03 2.46
2.41 2.089 1040.7 25.3 17 .8 13.4 10.0 2.76 -<
2.50 2.091 D!I.TA SET 50* DATA SET 57* 1074.2 25.8 B.7 16.0 11.9 3.38 0
2.58
2.69
2.81
2.094
2.097 1.5 2.03 x 10-" 1.51 4.49 x 10-"
1091.3
1109.7
25.7
20.2
2L.6
25.7
20.1
31.5
13.9
15.9
3.68
4.93
"r-
»
2.099 2.0 2.04 2.51 4.51 1122.3 26.2 27.6 43.2 17.9 c:
2.92 6.18
2.102 3.0 2.06 3.32 4.53 2L4- 57.5 19.7 3:
2.98 8.39
2.104 4.0 2.10 x 10-" 3.72 4.55 DATA SET 60 3L.4' 79.0 x 10-1>
3.10 2.108 4.05 4.57
21.6 11.8 Z
23.7 17.2 C
3.21 2.112 DA.TA SET 51* 4.41 4.59 10 222.0 x 10-"
3.32
DATA SET 65* 25.8 25.1 3:
2.116
3.38 2.122 1.5 6.21 x 10-'+
4.94
5.85
4.64
4.72
14
20
227.0
242.0 x 10-" L20 3.77 x 10-"
29.7
31.4
52.1
65.4 x 10':'''
»
Z
3.50 2.124 2.0 6.22 6.36 4.80 5.93 4.07 C
~ 3.61 2.130 3.0 6.26 6.93 4.88 DATA SET 61 3,03 4.68 DATA SET 68* 3:
"::r
'<
3.72
3.84
2.134
2.137
4.0 6.30 x 10-" 7.33
7.76
4.98
5.08 10 532.0 x 11)-"
B.O
1L.9
5.30
6.24
»
Z
(I) 273 2.46
3.95 2.139 Di\.TA SET 52* 8.21 5.23 14 537.0 B.9 7.17 G)
n 4.04 2.143 8.68 5.35 20 552.0 x D-" 15.0 8.10 DATA SET 69 »
z
i 4.13 2.152 1.5 5.20 x 10-'+ 9.19 5.48 17.8 10.3 m
? 4.24 2.159 2.0 5.21 9.72 5.54 X 10- 4 DATA SET 62 lL7 12.8 4.2 0.00025 tJ)
:u 4.35 2.167 3.0 5.24 21. 7 16.3 20 m
0.0008
~ 4.47 2.171 4.0 5.27 x 10-" DATA SET 58* 300 2.733 23. 7 21.6 30 0.0043
C 4.55 2.177 25.7 29.2
I» 4 40 0.0179
4.70 2.182 Di\.TA SET 53* 0 13.55 x 10- DATA SET 63* 27.7 38.4 50
j1 4.75 2.188 1.50 13.55
0.0472
2~.6 52.7 60 0.0953
< 4.87 2.198 1.5 0.95 x 10-" 1.89 13.56 4.09 11. 7 x 10-'+ 3L.3 66.7 x 10- 4 70
~ 4.98 2.204 2.0 0.95 2.06 13.56 7.92 12.6
0.1618
....
Co:» 5.10 2.208 3.0 0.98 2.38 13.57 9.90 13.5 DATA SET 66*
80 0.2439
w 90 0.3377
5.18 2.215 4.0 1.01 x 10-'+ 2.76 13.57 11.8 14.8
Z 100 0.4401
P 5.30 2.223 3.28 13.59 13.8 16.3 5.56 2.80 x 10-'+ 120 0.6601
Jao
cD
0)
*Not shown in figure. ....
....
olio CI'I
U'I
~
.....
.....
"U U1
:s- en
'< TABLE 3. EXPERIMENTAL DATA ON THE ELECTRICAL RESISTIVITY OF ALillUNUM Al (continued)
sn
(")
:s-
CD T P T, P T P T P T T P
~
::D
11 DATA SET 69 (cont.) DATA SET 74 DATA SET 79 (cont.) D,I"TA SET 81 (cont.) DATA SET 85 (cont.)* DATA SET 92 *
C 140 7.99 89.0 x 10- 4
I» 0.8899 416.0 3.989 58.9 0.097 4.13 24.!.86 77 0.748
1 160 1.123 10.5 91.0 442.3 4.255 63.8 0.125 4.21 24.:"92 x 10- 4
180 1.356 13.2 93.0 468.6 4.653 66.4 0.14 DATA SET 93 *
~ ZOO 1.589 16.9
19.6
196.0
260.0
499.2
551.8
4.964 69.8 0.17 DATA SET 86*
...a. 220 1.820 5.584 77.2 0.22 77 0.705
!'2 240 2.049 24.6 448.0 x 10- 4 573.6 5.894 81.6 0.25 2.98 433.15 x 10- 4
Z 260 2.278 604.3 6.249 88.6 0.31 3.20 433.16 DATA SET 94
P 280 2.506 DATA SET 75 634.9 6.647 91.1 0.33 3.57 433.18
.co.
~
300 2.733 661.2 7.002 100.5 0.44 3.74 433.19 1923 39.89
fD 320 2.961 8.19 89.0 x 10- 4 678.7 7.179 106;6 0.49 3.91 433.2l
CD 102.0
.co. 340 3.1&9 10.5 705.0 7.533 122.8 0.67 3.97 433.21 DATA SET 95
360 3.416 13.2 118.0 735.6 7.932 1.40.6 0.87 4.12 433.22
380 3.645 16.5 160.0 744.3 8.109 145.5 0.94 4.19 433.23 x 10- 1, 1798 35.56
400 3.875 19.6 214.0 761. 9 8.286 i62.l 0.14 1923 37.23
24.6 382.0 x 10-" 788.1 8.552 165.8 1.19 DATA SET 87 C
DATA SET 70* 814.4 8.863 l69.5 1.23 DATA SET 96 m
(f)
DATA SET 76* 845.0 9.306 179.5 1. 36 993 24.1
318 2.943
4.2 0.000182
880.1 9.749 18f:.6 1.39 1973 88;615 ~
893.2 10.10 LB9.5 1.49 DATA SET 88* c..
DATA SET 71* 273.15 2.429 919.4 10.50 WO.O 1.59 DATA SET 97 * l>
300 2.733 928.2 10.63 1120 27.0 3:
31B 2.945 DATA SET 82* 4.2 12.43 x 10- 4 m
DATA SET 77 DATA SE'!:.J!Q DATA SET 89 jI)
DATA, SET 72 4.2 0.018 DATA SET 98 i < l>
938 24.20 4.2 0.00231 77 0.265 842.5 9.96 Z
7.09 13.0 x 10-" 77 0.237 872.0- 10.30 4.2 14.35- x 10-_4 C
9.27 13.2 DATA SET 78* DATA SET 83 _ 897.8" 10.68 ::t
10.0 13.6 DATA SET 81 930.2 11.19 DATA SET 99* 0
12.2 14.3 293 2.65 H6 24.8 932.5 11.60
14.0 15.3 3.2 0.0004 1302 29.6 933.9 24.81 4.2 13.22 x ro- 4
16.9 17.0 DATA SET 79 6.2 0.0005 943.4 24.98
18.7 19.9 9.0 0.0006 DATA SET 84* 949.3 25.::'5 DATA SET 100*
21.3 25.3 8.77 0.00014 11. 7 0.0007 957.4 25.:"4
22.0 29.0 35.0 0.044 14.4 0.0008 74.98 0.4318 967.0 25.:"3 4.2 13.95 x 10- 4
25.3 43.9 x 10- 4 74.5 0.222 16.3 0.0011 l66.5 2.713 986.8 25.47
79.24 0.261 18.4 0.0016 1007.4 25.81 DATA SET 101
DATA SEl 73 96.7 0.419 21. 3 0.0023 DATA SET 85* 1014.0 25.80
110.4 0.611 24.1 0.0032 1030.2 25.97 4.2 13.29 x 10- 4
7.09 12.6 x 10- 4 125.4 0.802 25.2 0.0042 1.30 24.093 x 10- 4 1041. 3 26.35
8.91 12.8 155.3 1.089 28.2 0.0056 1.50 24.095 DATA SET 102*
10.0 13.0 189.7 1.439 28.5 0.0072 2.27 24.106 DATA SET 90*
12.2 13.5 210.5 1.694 32.0 0.0096 2.45 24.110 11.2 13.47 ~ 10- 4
14.0 14.1 237.8 1.980 34.6 0.0126 2.56 24.113 4.2 0.00012
16.5 15.6 264.4 2.299 35.3 0.015 2.71 24.117 273.2 0.72 DATA SET 103
19.1 18.1 280.3 2.394 38.4 0.022 3.00 24.127
21.3 23.5 297.8 2.660 42.5 0.034 3.12 24.132 DATA SET 9:* 273 2.521
22.7 26.7 359.1 3.324 46.3 0.034 3.59 24.152
25.6 42.4 x 10- 4 389.8 3.679 50.8 0.055 4.01 24.178 4.5 0.00102
kNot shown in figure. 295 2.33
TABLE 3. EXPERIMENTAL DATA ON THE ELECTRICAL RESISTIVITY OF ALUMINUM Al (continued)
T p T P T P T P T P T P
DATA SET 104 DATA SET 109 DATA SET 113 (cont.)* DATA SET 116 DATA SET 121* DATA SET 126*
300 2.65 321 3.03 20.4 67.1 x 10-'+ 883 10.3 4.2 0.00111 973 25
400 3.85 340 3.09 21.8 69.5 922 10.8 20.4 -0.00238
500 4.90 367 3.57 23.0 72.1 933 20.1 77 0.221 DATA SET 127
600 6.05 397 3.85 24.4 75.1 936 20.2 195 1.44 rn
700 7.15 424 4.12 25.4 78.3 939 20.6 273 2.46 313 2.86 r-
800 8.30 441 4.32 26.4 82.3 943 20.7 373 3.56 rn
900 9.40 496 4.94 27.8 88.7 944 ZO.4 DA.TA SET 122* 473 4.73 0
-I
605 6.24 28.9 95.0 947 ZO.5 573 5.90 ::D
10
DATA SET 105
0.00075
655
662
693
6.79
6.92
7;33
30.2
31.4
32.3
102.6
110.8
118.1
960-
963
974
20.6·
20.7
20.7
4.2
20.4
77
0.00575
0.00766
0.224
673 7.12
DATA SET 128

-,.r-
(;
20 0.00143 33.2 126.8 998 11.0 195 1.50 ::D

30 0.00532 DATA. SET 110 34.1 136.8 1001 n.o 273 2.30 323 2.98 rn
40 0.01867 34.7 144.2 x 10-'+ 3.56 en
50 0.04807 77 0.221
1004
1006__
11.1
21.1 DATA SET 123
373
473 4.73 en-I
60 0.09640 273 2.425 DATA SET 114 1008- 21.2 573 5.90
70 0.1632 1014 21. 2 4.2 0.0439 673 7.12 <:
80 0.2455 DATA SET 111* 6.7 22.7 x 10-'+ 1025 11.4 20.4 0.0463 773 8.51 =i
90 0.3400 9.4 23.5 1034 21.3 77 0.270 873 9.92 -<
0
100
120
140
0.4425
0.6631
0.8934
4.6
15.1
17.7
0.00261
0.00383
0.00380
11.4
13.3
16.1
24.5
25.6
27.7
1044
1050
1078
21. 7
21.6
22;i
195
273
1.62
2.42 DATA SET 129 ,.r-
."
160 1.127 21.0 0.00109 18.5 30.2 1080 22.2 DA.TA SET 124 123 0.74 c:
180
200
1.361 24.9 0.00505 20.1 32.2 .173 1.31 s:
1.593 27.8 0.00768 21.8 34.7 DATA s:n U7 4. 2 ~ 0.087 223 1.89 Z
220 1.824 30.1 0.0103 23.3 37.8 20.4 0.0942 273 2.46 C
240
260
273.2
2.053
2.280
2.430
35.4
41.9
48.1
0.0156
0.0302
0.0461
24.7
25.8
26.9
41.1
43.9
48.1
4.2
DATA SET 118

0.00725 77
195
273
0.341
1.63
2.46
323 3.02
DATA SET 130

,.
s:::
Z
295 2.678 54.0 0.0647 27.9 52.4 C
!-
'tI DATA SET 106*
61.3
69.8
0.103
0.169
29.0
29.9
57.2
61.9
298
373
2.74
3.57
D.II.TA SET 125 973
1023
26.3
27.1 ,.s:::
,.
:::T
'< 80.0 0.260 30.6 66.4 473 4.71 100 0.441 1073 27.8 Z
sn 273.2 2.485 90.3 0.375 31.6 73.4 573 5.86 120 0.668 1123 28.6 G')
(') 32.6 81.6 673 7.06 140 0.901 1173 29.3
:::T
CD DATA SET 107 DAl'A SET 112* 33.4 88.6 773 8.30 160 1.133 1223 30.1 Z
rn
? 34.0 95.3 180 1.367 1273 30.9 en
::xl 193.7 1.52 1.5 0.00428 34.3 100.6 x 10-'+ DATA SET 119 200 1.599 rn
11 248.2
298.2
2.14
2.72
293 2.84
DATA SET 115 40.9 x 10-'
220
240
1.830
2.062
DATA SET 131
C 20.4
I» 351.2 3.33 DATA SET 113 * 260 2.292 4.2 0.0586
jr 408.4 4.05 77.78 0.2257 DATA SET 120* 280 2.522
< 8.7 57.7 x 10-'+ 194.6 1.554 300 2.751 DATA SET 132*
~ DATA SET 108* 11.2 58.6 273.2 2.450 20.4 59.7 x 10-' 320 2.982
.... 13.2 59.7 298.5 2.724 340 3.211 4.2 0.0166
JIl
Z 293 2.9 15.8 61. 7 360 3.443
9 18.9 65.0
~~
.... *Not shown in figure. .....
.....
CD
CD en
~ .....
~ ....
....
."
=r en
'< TABLE 3. EXPERIMENTAL DATA ON THE ELECTRICAL RESISTIVITY OF ALUMINUM Al (continued) CO
!II
n
=r
CD
T P T P T P T P T T P
? P
:II
CD DATA SET 133* DATA SET 139*
=-" DATA SET 142 'I< DATA SET 143 (cont.) DATA ~ET 150 (cont.) DATA SET 154 (cont.)
C
III 20.4 0.698 1.8 37.6 x 10-" 47.00 0.08630 895.0 10.117 17.9 106.3
,;r 273
373
2.417
2.500 76.04 0.2301 905.6 10.292 18.8 108.8
< DATA SET 134* 473 4.619 DATA SET 143 * 915.9 10.449 19.7 111.4 x 10-"
....~ 20.4 0.624
573
673
5.801
7.046 1.8 20.0 x 10-"
DATA' SEf 149 927.8 10.644
DATA SET 155
~
Z 773 8.346 2.7 80.6 x 10- 4 DATA SET 151
P DATA SET 135 823 9.170 DATA SET 144 * 4.1 80.6 339 3.26
:P- 873 9.755 5.3 80.9 1.5 29.2 x 10- 1, 404 4.11
9.0 x 10- 4
..
:L24 898 10.139 1.8 17.5 x 10- 4 5.7 80.9 2.3 29.2 459 4.82
U; 4.00 9.1
CD 923 10.540 6.3 82..,0 3.0 29.2 552 6.04
6.40 9.4 DATA SET 145* 6.7 82.0 4.0 29.4 .1)34 7.01
6.40 9.5 - i.2 82.8 14.1 34.9 728 8.36
8.55 10.0 1.8 14.9 x 10- 4 7.8 83.9 16.0 37.3 795 9.34
9.35 10.2 8.7 82.3 18.0 40.2
10.2 10.4 DATA SET 140* DATA SET 146* 9.2 81.7 20.0 44.1 x 10-"- DATA SET 156 tJ
U.51 12.3 10.3 85.6 m
15.3 15.0 14.2 0.000153 294 2.8 11.0 83.7 DATA SET 152 338.0 3.15
en
)-
19.6 22.2 15.5 0.000211 372 3.8 11-:7 83.9 401.6 3.97 ~
23.4 40.4 16.2 0.000266 492 5.4 12.6 84.5 1.5 33.6 x 10-1> 457.2 4.65 Co..
28.0 96.3 x 10-" 17.0 0.000334 618 6.7 13.4 8 7 .5 2.3 33.6 553.0 5.85 )-
18.6 0.000383 721 7.5 14.5 87.5 3.0 33.7 631.0 6.82 ::
m
DATA SET 136 20.3 0.000482 822 9.5 16.1 91.4 4.0 33.7 730.2 8.20
21.2 0.000607 914 9.7 19.1 99.4 14.2 39.8 796.6 9.14 !l
:L19 5.70 x 10-' 59.5 0.0825 942 25.5 21.9 106.0' 16.0 41.9 )-
!. 56 5.70 68.1 0.119 976 25.9 26.1 126.0. x 10-1> 18.0 45.2 DATA SET 157 Z
3.06 5.70 85.3 0.227 1024 26.1 20.0· 49.1 x 10-" tJ
3.58 5.72 97.7 0.328 1073 27.7 DATA SET 150 _ 933.4 24.25 :t
3.91 5.77 128.3 0.569 DATA SET 153 973 24.83
0
7.31 6.31 290.4 2.16 DATA SET 147* 287.4 2.586 1073 26.30
8.94 6.98 289.4 2.609 1.5 55.4 x 10-" 1173 27.77
9.56 7.07 DATA SET 141* 20.08 0.070 293.0 2.653 2.3 55.4 1273 29.24
13.68 9.82 80.13 0.422 296.1 2. 687 3.0 55.4 1373 30.71
16.38 13.3 14.2 0.000158 186.6 1.252 377.4 3.605 4.0 55.5 1473 32.17
17.10 14.4 14.8 0.000218 272.6 2.362 187.8 3.726 14.3 62.5
21.39 26.5 x 10-" 16.3 0.000286 372.0 3.445 438.4 4.304 16.0 65.0 DATA SET 158 *
17.8 0.000343 502.0 5.041 18.0 68.7
DATA SET 137 17.8 0.000376 DATA SET 148 583.6 6.006 19.9 73.5 x 10- 4 90.2 0.352
19.5 0.000494 688.3 7.286 194.7 1.55
4 20.0 x-10-I> 20.4 0.000649. 4.00 0.02488 728.8 7.802 DATA SET 154 273.2 2.44
20 23.2 58.0 0.000809 7.33 0.02489 764.4 8.264 373.2 3.59
30 69.9 X 10- 4 60.7 0.116 13.40 0.02606 770.9 8.355 2.0 91. 6 x 10- 4
79.8 0.230 16.60 0.02642 794.1 8.663 3.0 91.7 DATA SET 159*
DATA SET 138 87.4 0.347 19.77 0.02805 831.3 9.185 4.2 91.9
115 0.627 21.98 0.02992 843.3 9.345 13.9 98.6 4.2 0.00304
4 0.00106 261 2.25 25.01 0.03404 854.3 9.516 14.9 100.0 273.2 2.554
20 0.00201 28.91 0.04018 372.5 9.774 15.9 102.0
30 0.00514 35.08 0.05346 878.1 9.868 16.9 103.9
*Ilot shown in figure.
TABLE 3. EXPERIME~TAL DATA ON THE ELECTRICAL RESISTIVITY OF ALUMINUM Al (continued)
T P T P T P T P T P
DATA SET 160* DATA SET 170* DATA S&T 180* DATA SET 187* DATA SET 191 (cont.)
4.2 0.00385 273.2 2.695 21.2 0.340 273 2.53 648 7.638
273.2 2.603 83.2 0.663 293 2.75 673 7.991
DATA. SET 171* 271.2 2.84
DATA SET 16:.* DATA SET 188*
88 0.318 DATA SEf 181 m
4.2 0.00551 20 0.108 r
m
273.2 2.513 DATA SET 172* 959.15 26.0 80.1 0.367 n
988.15 26.4 81.1 0.380 -t
DATA SET 162* 88 0.394 1018.15 26.8 194.7 1.64 ::D
DATA SET 173*

1047.15 26.8
DATA SET 189
n
»
20 0.0241 1089.15 27.6
90 0.371 1198.15 29.2 r
297 2.7414 88 0.382 973 27.80 ::D
m
DATA SET 174*
DATA S&T 182* 1073
1173
29.28
30.75
en
DATA SET 163* ~.
296.2 2.96 127:>: 32.22
20 0.0293 88 0.342
DATA SET 183
1373
1473
33.68
35.17
<
~
90 0.381
297 2.7330 DATA SET 175* 1573 36.60
DATA SET 164* 89 0.725

289.4
290.0
2.83
2.79 DATA SET 190*
o.,.
20 0.0321
273
374
2.70
3.92
290.0
346.2
2.81
3.45 293 2.~28
»
r
90 0.381 476 5.16 350.2 3.53 C
297 2.740 352.2 3.53 DATA SET 191 3:
DATA SET 176* 433.2 4.47 Z
DATA SET 165* 434.2 4.48 84 0.641 c
21.2 0.0183 575.9 6.15 98 0.795 3:
20 0.0281 83.2 0.3065 577 .6 6.23 123 1.038 »
z
90 0.377 273.2 2.50 579.4 6.24 148 1.282
297 2.7359 672.2 7.39 173 1.535 c
~ DATA SET 177* 773.2 8.77 198 1.782 3:
."
::r DATA SET 166* 775.6 8.79 223 2.067 »
z
"< 21.2 0.0351 813.9 9.31 248 2.321 G')
"n
:r
CD
20
90
297
0.0261
0.406
2.750
83.2
273.2
0.319
2.52 DATA SET 184*
273
298
323
2.618
2.928
3.237
»
z
m
~ DATA SET 178* 273 2.74 348 3.562 til
::II DATA SET 167* 293 2.99 373 3.858 rn
~ 21.2 0.0157 398 4.192
83.2 0.458 DATA SET 185* 423 4.498
~
273 2.50
I»
273.2 2.65 448 4.827
~
DATA SET 168* 273 2.64 473 5.172

<
0 DATA SET 179* 293 2.87 498 5.518
:- 523 5.850
..... 273 2.52
54 21.2 0.219 DATA SET 186* 548 6.204
Z DATA SET 169* 83.2 0.525 573 6.559
P 273.2 2.72 273 2.61 - 598 6.917
,!a 293 2.65 293 2.84 623 7.274 ....
....
..
cD
co
m
1160 DESAI, JAMES, AND 1-10
recent years. These studies are reported in Refs., 231-250. 91 X 10~8 n m for the electrical resistivity of /3-Mn. Potter
The effect of deformation on the electrical resistivity is also et al. 312 and Erfling313 have reported about 40X 10- 8 n m
an equally well investigated area. Interested readers may re- for the room-temperature electrical resistivity to'fct r-Mn.
, fer to Refs. 251-269 for information on the electrioal resis- High-temperature o-Mn with a bcc structure is stable
tivity of deformed aluminum. Last but not least, magnetic between 1411 and 1519 K.
field effects are reported in Refs. 270-277, effects of heat There are only two data sources available in the tem-
treatment, quenching, and cold working are given in Refs. perature range 325-1519 K. Grube and Speidel308 (data set
278-290, and effects of high pressure ate discussed in Refs. 17) reported that the resistivity of manganese increases slow-
291-296. ly with increasing temperature from 325 to 98Q K and then
decreases sharply from 980 to 1519 K. However, Akshent-
sev et al. 301 (data sets 5,6) reported that the electrical resistiv-
3.2. Manganese ity rises sharply between 800-980 K, then slowly from 980 to
There are 16 references available reporting temperature 1300 K followed by a slow decrease from 1300 to 1400 K and
dependence of the electrical resistivity from 1 to 1873 K. then further increases. The reliability of these results is ques-
However, the data are highly contradictory, and in several tionable. Room-temperature electrical resistivity of Grube
cases disagree both qualitatively and quantitatively. 'Further and Speidel308 (data set 17) is twice as much as the recom-
careful measurements on purer samples covering the entire mended value, and indicates a high impurity in their sample.
temperature range, especially al;>ove 300 K and below 20 K, The value of 38 X 10- 8 n mat 800 K for the electrical resis-
are required and strongly recommendyd. The information tivity reported by Akshentsev et al. 301 (data set 5) is far lower
on, spp.cimen characterization ami on measurement condi- than the rp.commended room-temperature value of
tion for each of the data sets is given in Table 5. The data sets 144 X 10- 8 [) m. Therefore, these data are rejected. The rec-
are tabulated in Table 6 and partially shown in Figs. 4 and 5. ommended values from 325 to 700 K are obtained by extra-
Electrical resistivity data on poly crystalline manganese 'poiating the low-temperature data.
reported earlier are much higher than those reported recent- The published work on the electrical resistivity of mol-
ly. These differences may be possibly due to the low purity ten manganese is equally contradictory. For instance, Ak-
and insufficient heat treatment of the manganese i'samples shentsev et al. 301 (data set 6) reported an increase in the resis-
studied earlier. Meaden and Pelloux-Getva:is302 demonstrat- tivity with temperature, contrary to the results of Levin,et
ed that the room-temperature electrical resistivity dropped al. 298 (data set 2) and ofVostryakov et a/. 305 (data set 13) who
from 205 X 10- 8 to 144.2;>< 10- 8 n m after annealing the reported a decrease in the resistivity with temperature. On
specimen at 898 K. the other hand, Grube and Speidel308 (data set 17) reported a
Meaden303 (data set 10), Bellou and Coles 306 (data set constant value of 40X 10- 8[) m from 1523 to 1543 K.,Sum-
14), and White and Woods 307 (data set 15), have reported T2 marizing this, the electrical resistivity at the melting point
dependence of the temperature-dependent resistivity (Pi) be- varies from 40 to 190x 10- 8 [) m. Therefore, the available
low 17 K. This was confirmed by Nagasawa and Senba 300 data and information at and above melting point cannot be
(data set 4) and by Murayama and Nagasawa310 (data set 19). used for meaningful data analysis. Consequently, no recom-
The recommended values from 20-325 K are based on the mendations were made for the electrical resistivity of man-
generally agreed upon data of Nagasawa and Senba300 (data ganese in the melting region.
set 4), Meaden and Pelloux-Gervais,302 (data set 12), Bellou The recommended values of the electrical resistivity
and Coles 306 (data set 14), and of White arid Woods 307 (data given in Table 4 and shown in Figs. 4 and 5 along with the
set 16). The recommended values below 20 K for experimental data are for manganese of purity 99.99% or
Po = 6.9x 10- 8 n m are based on the data of Meaden 303 higher, but those below room temperature are applicable
(data set 10) and Meaden and Pelloux-Gervais304 (data set specifically to manganese with Po = 6.90X 10- 8 m. The n
12). ' table gives both values uncorrected and corrected for ther-
An appreciable spin-disorder contribution is indicated mal expansion, while the figure shows only the uncorrected
by large resistivity values. It appears that the spin-disorder values. The thermal expansion values needed for such cor-
contribution generally present at higher temperatures still rection are taken from Ref. 314. The uncertainty in the rec-
remains at liquid-helium temperatures. The temperature-de- ommended values is estimated to be within ± 10% from 7 to
pendent resistivity (Pi) falls linearly and slOWly with, tem- 100 K and above 300 K, and ± 5% below 7 K and from 100
perature below 325 K. It goes through a minimum at about to 300 K.
94 K, and then remains practically constant for four to five Electrical resistivity of slightly less pure manganese
degrees before increasing to a weak maximum at 70 K. Be- with different residual resistivity can be calculated from the
low this temperature, Pi drops very rapidly, finally becom- recommended values using the Matthiessen rule. This proce-
ing proportional to T 2 below 17 K. dure involves subtracting Po from the recommended P value
Alpha-Mn is a stable phase below 980 K and has a com- to obtain the temperature-dependent part to which Po of the
plex cubic (AI2) crystal structure with 58 atoms in the unit specimen in question be added to generate a set of values
cell. At 980 K, a-Mn transforms to /3-Mn which has a com- applicable to that specimen. However, it should be pointed
plex cubic structure (A 13) with 20 atoms in the unit cell. It is out that this procedure neglects contributions due to devia-
possible to retain the /3 phase at room temperature by rapid tions from the Matthiessen rule. Based on the available data
quenching from 980-1300 K. Brunke311 obtained a value of it is safe to assume that the deviation from Matthiessen's rule

TABLE 4. RECOMMENDED VALUES FOR TIlE ELECTR'ICAL RESISTIVITY OF ltlANGANESEa
[Temperature, T" K; Electrical Re~istivity, p. 10- 8 U m]
T T
0 6.90 6.88 94 131.9 131.4

1 7.02 7.00 100 132.5 132.1
4 8.82 8.79 150 136.3 135.9
7 12.78 12.74 200 139.4 139~1
10 18.90 18.84 250 142.0 141.9
15 33.9 33.8 273 143.1 143.0
20 53.8 53.6 293 144.0 144.0
25 75.8 75.6 300 144.2 144.2
30 93.7 93.4 350 145.9 146.1
40 116.0 115.6 400 147.3 147.7
50 126.5 126.1 500 149.4 150.1
60 131.2 130.7 600 150.9 152.1
70 133.0 132.5 700 151.9 153.6
80 B2.5 132.0
90 132 131.5
aThe valhes are for well-annealed manganese of puri ty 99.99% or higher. but
those below rooD: temperature are aPjlicable specifically to manganese having a
residual resistivity ot 6.90 1 10- U m. The columns headed uncorrected and
corrected refer to values uncorrected and corrected' for thermal expansion.
respectively.
(DMR) is small below 20 K for 7 X 10- 8 <Po < 28 X 10- 8 resistivity of manganese are directed to Refs. 315-341.
n m. Above 20 K, the behavior is rather complex and needs Adanu and Grassie297 (data set 1) studied the tempera-
further study. ture dependence of the electrical resistivity of a thin manga-
The effect of a magnetic field on the resistivity of man- nese film. For a film of thickness 4000 A formed on a thin
ganese at low temperature is relatively small compared with glass substrate, they found that the resistivity decreased lin-
that for pure copper. Meacien 303 found that a magnetic field early as the temperature was reduced from room tempera-
of 18.5 kOe increases the resistivity by 10.5% at 4.2 K, 9% at ture, then passed through a minimum at --120 K and a max-
5.4 K, 8% at ,5.9 K, and 0.2% at 77 K. Murayama and imum at -- 70 K, followed by a sharp drop before going
Nagasawa310 (data set 19) studied temperature and magnetic through another minimum at 22 K. These features of the
field dependence of the resistivity of polycrystalline a-Mn resistivity of thin films, with the exception of the minimum
and observed that the anomalously large coefficient of T2 at -- 22 K, are qualitatively similar to those reported for bulk
term in the low-temperature resistivity decreased apprecia- specimens reported by Meaden and Pelloux-Gervais302 (data
bly for an increase in the applied field, suggesting the sup- set 12) and by White and Woods307 (data sets 15,16). Addi-
pression of spin fluctuations in the antiferromagnetic a-Mn tional information/data on films are reported in Refs. 342-
by the high applied field. Those readers seeking additional 351. The pressure dependence of the electrical resistivity is
information on the effect of magnetic field on the electrical reported in Refs. 352-355.

~ ....0'<
~ 103~
8-
I 1_1 I II I I I II I I I II I .~
~ ,~
n
:r
CD s
~
~= III ! I
5
::a
~
,
4
-. . . df r
~ i~~±tl-
i 3
II ·1 I
< , ""'.11" .. I I
~
j:
z
p
~
2t
~
:...
co
'Q r--
6 l-----t--____+_+__+_
r 5 I--------t---t-----+--t--t--
om
r- C/J
5> 4 t-----+------t- ~
~
- 3 I-----t-
c..
>
f3
a::: 1-
i:
m
.sn
<i. 2
z>
15
U
c:: 1-:-::- g
r- ::E:
&3 o
~ 10 I - - - - - I - _ + _ + _
1-
8 ~-~--+--+---+--+ ELECTRICAL RESISTIVITY OF
1-
MANGANESE Mn
:I I I III I I I I III I I I I I II I I I I II
3 ~1--------r----+--~~~r-~~4-------~----~--;--+~~~--+--------+----+---+--+-+---+--r-----~-r----+---r-~
2t I I I II I I I I II I I I I I I II I Tm 11519 K -
T,.._8 14I1K -
1 1 1-
,r , 2I, I 111,1,1
I 3456810 2I ,I I I ~N r;'j
:3 4 5 6 8 10 2 2
I, I I h7~KJ"]j I
3 4 5 6 8 1 03 2
1
3
I-
- 45
CINDAS TEMPERATlRE • K FIGURE 4
: I I I I l ___l--l---l
~o
260 1------..
U±tl-I J=t~E~T9~~~~~T~!T+I_Y__o-+- -~ I ---+-----l
rn
J~nl I I I I r-
un
rn
o-I
240 I I I i J£ :XJ
~!
o»
vr1\1 hd:1 1 1_
n\.
r-
:XJ
.,~200
E220 rn
en
I I
en
, , ,'~'bJ' sP'~'t'c,"y!~
-I
RECOMMENDED .. : <:
~_
~
'0 OS
t-~I ~~~
-:.
>- ,80
( belOW. 29. ....3K ,,0- .n m
to. p. -6.90K
_II \_ =i
-<
1,60
~
u 6 L---+-I
~_I
-1
o"T1
»r-
c
3:
Z
~
140
c
3:
~
lrl
W
'20 .
i
__ I I" --r-I- - t - - -
»
z
c
~
'OOH ~ l 3:
»
"::r
'<
!II
80r-nr -~/\ !>--~
---- z
C)
»
(')
i // I® / z
rn
13
::D
--®- en
rn
~
~ ~.--
1=+=
C
;
<
~
....
~
Z
Ta -/3 980 K [Tm 151j K
~
!'- a0 100 500 600 700 800 1500 1600 1700 1800 1900 2000 ......
U; FIGURE 5 0)
0) CINDAS ~
.Do
!- -'
"
:7
'< TABLE 5. MEASUREMENT INFORMATION ON THE ELECTRICAL RESISTIVITY OF MANGANESE Mn .,.-'OJ
"o
:7
CD
Data
Set
Ref.
Author(s) Year
Method Temp.
Name and
? ~o.
No. Used Range, K
Designation
~
CD
:"" 1 297 Adanu, Y..G. and 1978 p 10-287 S):xii(a) 99.98 Mn; electrolytic flakes from Koch Light Laboratories; cleaned
o Grassie, A.D.C. in 5% HCl in methanol to remove surface oxidation and contamination;
~ dried and ground immediately before being loaded into a previously
cleaned molybdenum hoat; films were prepared by thermal evaporation
.~ of Mn powder onto thin glass substrates, cut to size and cleaned;
substrates heated to 473 K during evacuation of chamber then cooled
.-
~ to 383 K. temperature at which evaporation was carried out; coating
Z pressure was about 10- 6 torr; films were allowed to cool to room
P tempe'tature before removing from vacuum chamber; thickness of film
.!- is 40CO A; data read from figure; very large value of about 120 x 10- 8
u; Q m is attributed to several atoms driven into spin fluctuations.
CD
"" 2 298 Levin, E.S.,

Zamarayev, V.N., and
1976 1523-1873 Liquid manganese; remeltep electrolytic distilled in a vacuum;
average of heating_and cooling experiments; measurements with contact-
Gel'd, r.v. less· tT.ethod in a revolving magnetic field; torsionaL oscillating
methoc; measurenents error did not exceed 7%.
C
3 299 Butylenko, A.K. and 1976 A 75-301 a-Mn 99.9 Mn; data extracted from figure; two coordinate potentiometer. m
4 300
Kobzenkc, N.S.
Nagasawa, H. and 1975 V 3-282 a-Mn 99.99 Mn; flakes were etched in HN03 to remove surface oxidation,
~c..
Senba, }(. accuracy of resistance measurements is about 0.05%; uncertainty of »
about 10% assigned to resistivity values because of the uncertainty 3:
in determining cross-sectional area of sample; current reversed to
m
jIJ
elimir.at(! thermal emf; data extracted from graph.
»z
301 Akshentsev, Yu.N., 1969 R 797-1793 99.99 Mn; triple vacuum melted; measurements in helium using aluminum c
Baum, B.A •• and oxide crucibles with closely fitted lids of the same material; re-
Gel fd, F.V. :I
sistivity of Mn increased by 5% during melting; data extracted from o
figure fot heating experiment.
6 301 Akshentsev. Yu.N., 1969 R 921-1775 Same as above except data for cooling experiment.
et a1.
7* 302 Meaden, G.T. and 1967 A 1.87-300 99.995 Mn; electrolytic Mn from Koch Light Laboratories; 20 ppm Mg,
Pelloux-Gervais, P. 2 ppm Si, <1 ppm Cu; irregularly shaped flakes of uniform thickness
of about 1 mm; platelet samples were shaped by spark erosion into
rectangular parallelopipeds 5-6 mm x 20-30 mm; the values in the
parenthesis are for specimen after being etched in dilute Hel and
annealed in vacuum 1-8 x 10- 6 torr for 7 hr at 898 K.
8* 302 Meaden, G.T. and 1967 A 300 Similar to the above except electrolytic manganese supplied by
Pelloux-Gervais, P. Pechinery of unknown purity; the values given in parenthesis are for
specimens after being etched in dilute HCl and annealed in vacuum
1-8 x 10- 6 torr for 7 hr at 898 K.
9* 302 Meaden, G.T. and 1967 A 4.2,300 Similar to the above except electrolytic manganese supplied by
Pe11oux-Gervais, P. Johnson-Matthey of· unknown purity; the values given in parenthesis
are for specimen after being etched in dilute Hel and annealed in
vacuum 1-8 x 10-6 torr for 7 hr at 898 K.
TABLE 5. MEASUREM~NT INFORMATION ON 'nE ELECTRICAL RESISnVITY OF MANGANESE Mn (continued)
Data Naml'! and

Set Ref. Method Temp.
Author(s) Year Specimen Composition (weight percent), Specifications and Remarks
No. No. Used Range, K
Designation
10 303 Meaden, G. T. 1966 A 1.9-348. 99.995 Mn supplied by Koch Light Laboratories Ltd.; impurities such
as 20 ppm Mg, 2 ppm Si, 1 ppm Cu; surface contamination was removed
by reduction in dilute HC1; annealed in 10- 6 torr vacuum for 7 hr at
89~ K; extrapolated Po from 2 K is 6.87 x 10- 9 n m; values read from
figure which do t!.0t agree with some values given' in text. m
r-
rn
11 303 Meaden, G.T. 1966 A 16-70 Sane as above except data extracted from table (text). o
-t
12 304 Meaden, G. T. and 1965 0-325 99.995 Mn; 20 ppm Mg, 2 ppm Si, <1 ppm Cu; the ~lectrolytically :tJ
Pelloux-Gervais, P.
A
maie specimen was supplied by Koch Light laboratories Ltd.; the
specimen dimension 0.965 x 4.92 x 24.95 mn; the specimens were an-
ol>
nelled under a vacuum of 10- 6 to 8 x 10-~ torr for 7 hr at 898 K; r-
the resistivity at 0 K was obtained by extrapolating from 2 K; error XI
m
associated with resistivity data did not exceed 1%; above 80 K aver- en
age of heating and cooling experiments. en
-t
13 305 Vostryakov, A.A., 1964 1673-1873 E1ectrolyUc manganese. <:
~
Vatolin, N.A., and
Esin, O.A.
14 306 Bellw, R. V. and 1963 A 2-293 s-pecimens 99.95 Mn taken from different batches of Johnson
Tw:>
o
."
Coles, B.R. Matth~y electrolytic manganese; vacuum an~ealed near 873 K after l>
cutting into suitable shapes ('U4 cm x 1 mrn x 1 mm) with an ultra- r-
sonic cutter; measured resistance was com-erted to resistivify by _ C
assuming 0300-04.2=130 X 10- 8 ~ m for pure manganese; observed Neel i:
tenperature is 95:\: 2 K; data extracted from the graphically smooth - Z
values of the authors. c
3:
15 307 White, G.K. and 1957 A 2-288 Hn3 Specimen from Ms. Johnson Matthey and Mallory Ltd. (JM 19792); high l>
Woods, S.B. purity specimen with 10 ppm of Mg as major solid impurity; annealed Z
f- specimen; data calculated from Pi values represented graphically
C
3:
"::r using po=l!. 3 x 10-8n m reported by authors.
l>
~ 16 307 White, G.K. and 1957 A 6-295 Mn Specimen cut from material supplied by A. D. MacKay Inc.; annealed
Z
n Woods, S.B. in vacuum at 873 K for some hours to remove adsorbed hydrogen; spec-
G')
if l>
[3 trographic analysis showed that this material was of comparable high Z
purity to that of Mn3; data e~tracted fron figure; data exhibits a rn
:D
shallow minimum near 100 K and falls rapidly below 50 K; residual en
m
~ resistivity po"'16.8 x 10-8 ~ m.
J 17 308 Grube, G. and'

Speidel, H.
1940 R 293-1543 Vacuum distilled Mn; 0.01-0.001% Fe and Si, <0.001% of Cu, Ca, and
AI; cylindrical specimen 9 mm diam~ and 15 mm length.
~
.... 18 309 Reddemann, H. 1935 78-273 B-Mn No details given except sample~16 mm long _and 'U5 mm diameter and
!A end surfaces were ground; values calculated from reported P/P273
z values and 91.0 x 10- 8 n m for electrical resistivity at 273 K.
~
Ja .....
....CD .....
m en
olio en
~ -'
-'
m
":r
'<
!" TABLE S. MFASUREMENT INFORMATICN ON THE ELECTRICAL RESISTIVITY OF MANGANESE Mn (continued)
m
n
:r
CD Data Name and
? Ref. Method Tenp.
Set Author(s) YeaI Specimen Composition (weight percent), Specifications and Remarks
::IJ No. Used Range, K
No. Designation
,
~
i'
<
1.9* 310 Murayama. S. and
Nagasawa, H.
1977 A 1.17-4.15 Ci-Mn Pure Mn; specimen same as the one reported in data set 4; annealed at
625°C for 48 h to obtain pure a.-Mn and at 600°C for 24 h to remove
strain during sample; measurements in 0 kOe; longitudinal and trans-
verse magnetoresistance. -
~
....
jI)
Z
P
~
CO
CD
.,:a.
CJ
~
~
C-
~
rn
,..z
JI'
CJ
::J:.
o

TABLE 6. EXPERIMENTAL DATA ON THE ELECTRICAL RESBTIVITY OF MANGANESE Mn
8
[remperature, T, K; ELectrical ResistivitY', p, 10- S4 m]
T P T P T P T P P T P
DATA SET 1 DATA SET 3 ~cont.) DATA SET 4 (cont.) DATA SET 5 (cont.) DATA SET 6 DATA SET 7 (cont.2*
10.6 122 96.7 206.1 98.9 138.0 1063 139.1 921 94 4.2 (13.7)
14.4 119 102.6 206.1 105.7 139.7 1080 137.9 958 122 4.2 (11. 2)
18.2 118 108.4 207.9 109.1 140.5 1086 139.7 978 132 4.2 (9.1) m
22.0 118 129.4 209.8 117.5 140.5 1109 142.1 10to 134 1.87 (7.3) r-
26.8 120 151.6 212.2 122.6 142.1 1127 143.3 1028 135 m
1086 136 DATA SET 8* 0
35.2 130 203.0 217.7 129.3 142.1 1153 145.1 -f
44.7 143 231.0 219.5 132.7 143.0 llQ5 148.6 1121 144 ::c
54.1 152 250.9 221.4 137.8 143.8 1194 150.4 1139 145 300 345(185) 0
61. 7 155 268.4 -222.0 142.8 145.5 1209 150.4 1183 146 300 320(175) l>
67.4 156 287.1 222.6 169.8 147.1 1220 153.9 1209 146 r-
71.2 156 301.1 222.6 183.3 147.1 1235 151.0 1232 152 DATA SET 9* ::c
190.0 148.0 1244 149.3 1288 147 m
76.8 156
1300 144 300 290(160) en
105.2
114.7
150
147
DATA SET 4 205.2
218.7
148.7
148.7
12§1
1256
152.8
148.1 1323 140- 300 253(155) en-f
1341 138 4.2 (15.0)
120.3
135.5
147
147
3.5
5.2
16.8
19.4
228.8
240.6
149.5
149.5
1279
1291
144.6
144.7 1364 140 :<
6.9 21.0 244.0 151.2 1303 144.7 1376 142 DATA SET 10 =i
150.6
197.9
147
148 8.6 26.1 250.7 150.3 1309 142.4 1379 145 -<
8.7 257.5 150.3 1309 138.8 1388 1-47 1.90 7.21 0
250.8 150 31.2 ."
286.8 151 10.4 32.8 264.2 152.0 1332 14-2.4 1411 147 2.01 7.32
1434 151 3.30 8.04 l>
10.4 36.2 282.8 152.8 1370 138.9
3.65 8..37
r-
DATA SET 2 13.8 41.3 1405 145.3 1434 169 C
13.9 44.6 DATA SET 5 1405 151.3 1454 170 4.46 9.02 3:
1523 49 17.3 51.4 1420 154.8 1504 166 5.19 9.73 Z
1543 47 20.7 60.6 797 35.9 1425 160.0 1507 169 5.74 10.33 C
1573 47 20.8 70.7 863 65.2 1425 167.0 1489 172 6.03 10.68 3:
1603 48 20.9 77.5 935 89.9 1452 165.9 1516 176 6.50 11.22 l>
:1623 46 24.3 84.2 938 93.9 1469 169.4 1530 178 6.84 11.94 Z
1673 45 24.4 89.3 938 103.3 1475 167.7 1524 182 7.56 12.55 C
e- 1708 43 27.8 92.6 964 106.8 1487 168.3 1550 188 9.25 15.83 3:
." 1723 44 33.0 109.5 961 114.4 1504 171.2 1550 192 10.2 17 .31 l>
::r 195 11.6 20.23 Z
36.4 117.1 952 118.5 1519 171.8 1576
~ 1763
1773
43
43 39.8 125.5 958 120.3 1498 175.3 1594 192 12.2 22.23 C)
0 39.9 128.0 975 119.1 1527 175.9 1644 197 12.5 24.31 l>
::r 1813 42 Z
CD 1823 43 44.9 132.2 967 122.0 1547 190.6 1685 200 13.8 26.79 m
3 1853 42 48.3 133.9 978 121.4 1565 190.6 1702 200 14.5 28.37 en
::D :..873 42 50.0 135.6 996 120.9 1591 194.7 1726 203 15.3 30.51 m
~ 56.8 137.2 975 125.5 1612 193.6 1761 204 16.1 32.87
C DATA SET 3 63.5 137.2 996 129.7 1635 197.7 1775 207 17.3 36.57
I» 18.2 41.45
jr 70.3 138.0 996 133.2 1655 198.9
75.6 218.8 73.7 138.0 1019 129.7 1676 195.4 DATA SET 7* 20.2 46.38
< 80.3 217.0 80.4 137.2 1013 132.6 1723 204.8 22.4 53.75
~ 83.8 214.6 83.8 137.2 1045 136.1 1752 208.4 300 210(149) 22.9 56.50
..... 205 (148) 26.6 71.64
~ 89.7 209.1 87.1 136.3 1051 138.5 1793 208.4 300
Z 92.0 207.3 92.2 137.2 1063 136.2 300 205(144.2) 31.9 82.29
P
.!'- *}!ot shown in figure • ..a.
....CD
.
..a.
CJ)
CD .....
!- ......
en
"
:T
'<
!II
TABLE 6. EXPERI~ENTAL DATA ON. THE ELECTRICAL RESISTIVITi OF MANGANESE Mn (Continued) o:t
n
:T
ct T P T-· P T P T P T P
~
::D DATA SET 10 (cont.) DATA SET 13
~.
DATA SET 16 DATA SET 17 DA~A SET 19 (cont.)*
0 33.4 91.41 1673 120 0.4 19.2 1.66 28.30
&» 293 260
; 36.9 103.4 1873 144 5 20.3 353 266 1. 75 28.30
45.1 113.1 6 22.6 1.80 28.36
< 47.5 121.5 DATA SET 14
423 274
~ 7 24.9 483 282 1.93 28.42
.... 58.1 128.3 7 27.1 553 286 1.97 28.49
!-l 64.2 130.6 2.3 23.0 8 29.4 _ 653 294 2.07 28.48
Z 74.7 130.6 4.6 24.7 10 32.2 723 298 2.11 28.52
~ 86.9 130.6 13.7 40.2 11 . 3S.C 2.22 28.58
803 303
.f'o 98..6 130.6 16.0 50.6 12 37.3 2.28 28.61
.... 109.1 130.6 27.5 83.9 13 41.2
903 307
2.38 28.67
CO 933 308
CD
A 133.5 130.6 34.4 97.7 13 45.8 973 307 2.43 28.73
163.4 133.1 43.5 111.5 16 52.6 1003 305 2.48 28.76_
221.1 135.6 49.2 116.7 17 62.2 1013(0.) 303 2.53 28.76
263.8 1'38.1 55.0 120.7 19 71.8 1018 (6) 164 2.59 28.79
322.8 138.1 63.0 123.0 23 83.6 1028 158 2.65 28.82
348.2 133.2 72.1 124.7 C
26 93.8 1068 150 2.71 28.88 m
87.0 125.3 28 105.1 1133 134 2.80 28.88 en
DATA SET 11;. 100.8
128.2
127.0
132.8
32
36
114.2
122.1
1228
1308
122
107
2.83
2.89
28~ 97
29.00
J!
c..
16 38.0 148.9 136.8 39 124.3 2.97 29.00
174.0 140.2
1333 104 l>
20 54.0 49 136.7 1343(6) 103 3.00 29.06 3:
30 92.0 200.4 143.1 53 139.0 1353 (y) 80 3~06 29.09 m
40
50
117.0
128.0
224.4
248.5
271.4
146.6
148.9
150.6
59
69
140.6
139.4
1363
1403
78
-76
3.11
3.20
-29.12
29.21
-l>
(f)
63 132.5 72 141.1 1423(y) -75 3.27 29.21 Z

70 133.0 293.1 152.3 75 138.3 1423(8) 69 3.36 29.27 0
82 139.9 1443 69 3.39 29.33 ::J:
DATA SET 12 DATA SET 15 85 140.5 1483 68 3.47 29.39 0
86 138.2 1523(s) 66 3.53 29.39
0 6.9 2.0 12.0 91 137.6 1523(.Q,) 40 3.60 29.49
4.2 9 2.3 12.2 93 135.4 1543 40 3.67 29.55
10 19 2.7 12.6 94 137.6 3.76 29.64
20 54 3.3 13.2 98 138.7 DATA ::ET 18 3.83 29.67
30 9'2 4.1 14.4 103 138.1 3.93 29.73
40 118 5.5 16.9 105 139.2 78.1 66.5 4.03 29.85
50 128 7.2 20.6 114 139.8 68.3 4.15 29.94
90.1
60 132 7.7 21. 6 116 142.6 194.7 81.1
70 133 8.0 23.4 118 140.9
27.7 . 273 91.0
80 132.5 9.7 123 142.0
90 132 9.7 28.4 129 144.8 DATA SET 19*
94 131.9 12 37.27 168 147.4
100 132.5 15 50.71 182 148.5 28.12
1.17
150 137 19 73.8 211 148.9 1. 27 28.18
200 140.5 29 112.5 239 150.4 1.30 28.12
250 143 53 168.2 266 155.4 1.39 28.24
273.15 143.5 62 171. 6 286 155.8 28.24
1.42
295 144.0 78 161.3 289 153.5 1.56 28.24
325 145.2 288 167.4
4. Acknowledgments (1972) [Russ. Metall. 5, 103 (1972)].

42R. J. DiMelfi and R. W. Siegel, Philos. Mag. 24, 279 (1971).
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44 A. Radenac, M. LaCoste, and C. Roux, Rev. Int. Hautes Temp. Refract.
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J. Phys. Chem~Ref.· Data, Vol. 13; No.4, 1984

Desai, Electrical Resistivity of Aluminium and Manganese

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Electrical Resistivity of Aluminum and

P. D. Desai, H. M. James, and C. Y. Ho

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Nomenclature .......................................................... . 1131 List of Figures

1. Introduction cal resistivity of aluminum and manganese are presented in

Pcorrected (T) .= [ 1 + --z:-

J. Phys. Chem. Ref. Data, Vol. 13, No. 4,_1984

TABLE 1. RECOMMENDED VALUES FOr. TIlE ELECnUCAL RESISTIVITY OF ALUMINUMa

[Temperature, T, K; Electrical Resi st ivity. p, 10- 8 12 m]

J. Phys. Chem. Ref. Data, Vol. 13, No.4, 1984

J. Phys. Chem. Ref. Data, Vol. 13, NO.4, 1984

J. Phys. Chem. Ref. Data, Vol. 13, NO.4, 1984

J. Phys. Chern. Ref. Data, Vol. 13, No.4, 1984

J. Phys. Chem. Ref. Data, Vol. 13, No.4, 1984

Data Name and

:r Data Name and

Data Name and

Rowlands, J .A. and mm; Po 9

Garland, J.C. and 1978 A 1.5-4.0 Al-5

Similar to above specimen; Po

Garland, J.C. and 1978 A 1.5-4.0 Al-6a

Similar to AI-I; Po 0.0000944 X 10- 9 Qm; RRR = 25999. A = 4.3 x

Data Name and

Thompson, G.E. and

85* 32 Senoussi, S. and 1973 A 1.32-4.21 Commercial

Data Name and

Data Name and

99.95 AI, 0.05 total impurities; aluminum purified by 15 passages in

~ 134* 65 Frois, C. and 1964 20.4 Simi~ar to above specimen.

j Canada, Trail, British Columbia; acid-etched to remove surface con-

144* 69 Swanson, M.L., et al. 1962 A 1.8 3 Same as above specimen.

146* 70 Korol 'kov, A.M. and 1962 294-1073 No details given.

Data Name and

170* 84 Eucken, A. and 1935 273.2 99.7 A1.

Data Name and

175* 86 Staebler. J. 1929 89-476 Pure.

TABLE '2. MEASUREMENT INFORMATION ON THE ELECTRICAL RESlS'CIVITY OF ALUMINUM Al (continued)

Data Name and

*Not shawnin figure.

1. 298 0.93306 x 10-1+

DATA SET 128

20 0.00143 33.2 126.8 998 11.0 195 1.50 ::D

DATA SET 118

DATA SET 130

DATA SET 173*

DATA SET 164* 89 0.725

DATA SET 168* 273 2.64 473 5.172

J. Phys. Chem. Ref. Data, Vol. 13, No.4, 1984

TABLE 4. RECOMMENDED VALUES FOR TIlE ELECTR'ICAL RESISTIVITY OF ltlANGANESEa

[Temperature, T" K; Electrical Re~istivity, p. 10- 8 U m]

0 6.90 6.88 94 131.9 131.4

J. Phys. Chem. Ref. Data, Vol. 13, No.4, 1994

"" 2 298 Levin, E.S.,

Data Naml'! and

J 17 308 Grube, G. and'

*Not shown in figure.

63 132.5 72 141.1 1423(y) -75 3.27 29.21 Z

4. Acknowledgments (1972) [Russ. Metall. 5, 103 (1972)].

J. Phys. Chern. Ref. Data, Vol. 13, No.4, 1984

J. Phys. Chern. Ref. Data, Vol. 13, No.4, 1984

J. Phys.Chem. Ref. Data, Vol. 13, No.4, 1984