EBERS-MOLL MODEL

Eber-Moll model of transistor is an ideal model which can be used in forward active mode,
reverse active mode, saturation and cut-off regions.

The model contains two diodes, D1 and D2 and two current source. The two diodes represent
the base-emitter and base collector diodes. In forward active region, the emitter-base junction is
forward biased and the collector base junction is reverse biased. The total collector current is
the sum of emitter current and the reverse saturation current due to D2

RIR FIF

IE IC

IB
IR= ICO (eVBC/ nVT- 1 IF = IEO (eVEB/ nVT - 1

IC = IR + FIF (1)

Where IF= IEO (eVEB/ nVT- 1 (2)

IR =ICO(eVBC/ nVT- 1 (3)

Under reverse active region, the diode D1 is reverse biased and D2 in forward biased. Emitter
current is given by

IE = IF - RIR

IB = IE - IC

= - RIR + IF + IR - FIF

IF(1 - F) + (1 - F) IR