8th International Conference on Renewable Energy Research and Applications
3-6, 2019
Influence of an Impulse Current near a Photovoltaic
Solar Module on Bypass Diode Characteristics
Yudai Fujimoto, Kenta Nakamoto
Advanced Course of Productions Systems Engineering
National Institute of Technology, Ube College
2-14-1 Tokiwadai, Ube, Yamaguchi, Japan
Toshiyuki Hamada
Dept. of Electrical Engineering
National Institute of Technology, Ube College
2-14-1 Tokiwadai, Ube, Yamaguchi, Japan
hamada@ube-k.ac.jp
Shinichiro Oke
Dept. of Integrated Science and Technology
National Institute of Technology, Tsuyama College
624-1 Numa, Tsuyama, Okayama, Japan
Takashi Oozeki
Advanced Course of Productions Systems Engineering
National Institute of Technology, Ube College
2-14-1 Tokiwadai, Ube, Yamaguchi, Japan
Abstract— Recently, failures in photovoltaic systems (PVSs)
caused by lightning damage have been increasing. When
lightning strikes a PVS, the bypass diode (BPD), which is a
protection element in the solar cell module (PV-MDL), breaks
down and burns out, rendering the PVS inoperable. In this study,
an impulse current test was conducted to clarify the lightning-
induced BPD failure mechanism. The impulse current with a
peak of 100 kA was employed to simulate a lightning strike
traveling in the vicinity of a PV-MDL. The results indicated that
a BPD fails because lightning (induced electromotive force)
strikes in the bypass circuit of the PV-MDL as the impulse
current passes in its vicinity. Furthermore, installing a metal
frame in the PV-MDL was shown to reduce the negative impact
of such lightning strikes.
Keywords—lightning; bypass diode; photovoltaic module;
impulse current test; induced lightning
I. INTRODUCTION
Recently, Japan has experienced an increase in demand for
photovoltaic systems (PVSs), prompted by the feed-in tariff
system of renewable energy and the need to reduce greenhouse
gas emissions associated with global warming[1-4].
Additionally, PVS accidents and failures caused by natural
disasters have been increasing. When a PVS is damaged via a
natural disaster, it generates current via light irradiation, unless
ICRERA 2019 ‹,(((
Brasov, ROMANIA, Nov.
Ikuo Nanno
Dept. of Mechanical Engineering
National Institute of Technology, Ube College
2-14-1 Tokiwadai, Ube, Yamaguchi, Japan
Norio Ishikura
Dept. of Electrical and Computer Engineering
National Institute of Technology, Yonago College
4448 Hikona-cho, Yonago, Tottori, Japan
Masayuki Fujii
Electronic Mechanical Engineering Dept.
National Institute of Technology, Oshima College
1091-1 Komatsu, Suo-Oshima, Yamaguchi, Japan
an abnormality is present in the solar cell power generation
system; thus, the current generated from damaged PVSs has
increased the risk of electric shock accidents and burns recently
[5–6]. One of the natural disasters causing these PVS failures
has been lightning damage. Thus, our research group has been
investigating PVS lightning failure mechanisms to identify the
origin of failure and potential strategies for overcoming the
same. Previous studies have shown that PVSs with lightning
damage often contain bypass diodes (BPDs) in photovoltaic
modules (PV-MDLs) that have failed [7–8]. The lightning
damage in PVSs is caused by direct damage lightning, induced
lightning, or backflow lightning. In PVSs where the BPD of the
PV-MDL has failed or burned, no visible evidence of lightning
current passing into the DC system of the PVS has been
present. Therefore, the BPD failure probably occurs via a
lightning-induced process in the PV-MDL, wiring, and/or
bypass circuit (BPC). When a BPD fails because of the
lightning strikes, the failure mode can be open or short circuit.
Notably, if the BPD failure is a short circuit, no external
features will exist immediately after the damage. However, in
some cases, under optical irradiation, power generation causes
a circulating current to flow in the BPC, resulting in
overheating and fires in the shorted BPD and in the junction
box containing the BPD [9–10]. Currently, Schottky barrier
diodes (SBDs), which have lower rising voltages and peak
repetition reverse voltages than the PN junction diodes, are
181
8th International Conference on Renewable Energy Research and Applications Brasov, ROMANIA, Nov. 3-6, 2019

being used as BPDs. Although SBDs exhibit excellent forward

characteristics when used as a BPD, their tolerance against
overvoltage caused by external forces such as lightning is
inferior to that of a PN junction diode.
季 In this study, an impulse current passing test was
conducted to probe the influence of induced lightning on the
BPD characteristics in the BPC of a PV-MDL.

II. EXPERIMENTAL METHOD

Figure 1 shows the schematics of the PV-MDL induced
lightning test. This experiment was designed to determine
whether a BPD fails because of an electromotive force (Fig. 2)
in the BPC, when a lightning current passes near the PV-MDL.
In the experiment, an impulse current (peak value: 100 kA ±
5%; Fig. 3) was used to simulate the direct current lightning,
which was generated by a current surge generator (ICG-200K;
Otowa Denki Co., Ltd.) and traveled vertically toward the
ground. We employed CS-236B31 (18 cells 3 clusters; Choshu
Sangyo Co., Ltd.) as the PV-MDL for these studies. Our
previous research demonstrated a failure of the PV-MDL
bearing an SBD rather than a BPD in the PVS lightning
damage survey (FSQ 30A045, repetitive peak reverse voltage
45 V, forward current 30 A). To realize a condition in the Fig. 2. Structure of PV-MDL and image of the induced lightning generated
present work such that the flux arising from the impulse current in the BPC.
would be most closely linked to the BPC, the PV-MDL was
directed vertically to the ground and in the same direction as
WKHLPSXOVHFXUUHQW7KHUHVLVWDQFHRIȍZKLFKVLPXODWHV
the ground resistance, was connected between the PV-MDL
and ground wire. Additionally, the output end of the PV-MDL
was kept open to eliminate the adverse inductive effect of
wires, and the light-receiving surface was shielded to examine
only the influence of the lightning on the BPC. To directly
probe the influence of the lightning strike on BPD failure, the
separation between lightning current and PV-MDL and the
presence or absence of the metal frame in the PV-MDL were
systematically varied throughout the impulse current tests.

Fig. 3. Impulse current test waveform.

III. EXPERIMENTAL RESULTS

A. Impulse current test of PV-MDL (with metal frame)

Fig. 1. Schematics of the impulse current test.
Table 1 shows the state of the BPD when an impulse
current passes near the PV-MDL containing a metal frame.
Herein, the tested solar cell module is a three-cluster module;
in particular, the PV-MDL comprises three BPDs, which are
defined as DN, DC, and DF and are arranged in order starting
with the BPD closest to the impulse current path. The distance
between the impulse current and PV-MDL was set between
0.15 and 1.0 m. The test results demonstrate that for PV-MDL
systems containing a metal frame, failures occurred in BPDs
located 0.15 m or less from the impulse current. Figure 4
shows the current–voltage (I–V) characteristics of a failed BPD
(DN), which was located 0.15 m from the impulse current and

ICRERA 2019 182

8th International Conference on Renewable Energy Research and Applications Brasov, ROMANIA, Nov. 3-6, 2019

was the closest BPD studied. Rectifying characteristics were because BPC is closer to the impulse current in the former
not observed in the failed BPD; however, a short circuit failure system.
where current flowed in the reverse bias was detected.
Incidentally, the occurrence of a BPD short circuit failure
TABLE II. INDUCED LIGHTNING TEST RESULT OF MODULES
indicates that the BPD also works in the reverse direction; in
other words, a circulating current flows in the BPC. The fault
Separation[m] DN DC DF
resistance at the reverse current level of 1 A in the faulted BPD
descrLEHGDERYHZDVDSSUR[LPDWHO\ȍ
0.65 Normal Normal Normal

TABLE I. INDUCED LIGHTNING TEST RESULT OF MODULES 0.4 Short Normal Normal
Separation[m] DN DC DF failure
0.40 Normal Normal Normal 0.20 Short Short Normal
0.20 Normal Normal Normal failure failure
0.15 Short failure Normal Normal
0.15 Short Short Normal
཯ֶ居Separation居ਜ਼৙居Normal居୻ཙ‫্ބ‬居Short circuit failure failure failure

Fig. 4. Current–Voltage (I–V) characteristics of a short circuit-failed BPD.

(a) DN
B. Impulse current test of PV-MDL (without metal frame)
Table 2 shows the state of the BPDs without a metal frame
after the impulse current passed near the PV-MDL. The
distance between impulse current and PV-MDL varied between
0.15 and 1.0 m. The experimental results demonstrate that PV-
MDL systems without a metal frame experienced BPD failure
if the system was placed at a distance of 0.4 m or less from the
impulse current. Under these conditions, the BPD closest to the
impulse current (DN) broke down, and when the distance from
the impulse current became 0.3 m or less, DN and DC were both
damaged. Figure 5 shows the I–V characteristics of a failed
BPD. Additionally, it depicts rectifying action loss, together
with a short circuit failure (i.e., current flows even in the
reverse bias), which is consistent with the module that
contained a metal frame. Notably, in the failed BPD, the fault
resistance at the reverse current level of $ZDVȍ'N) at
DVHSDUDWLRQGLVWDQFHRIPȍ'NDQGȍ'C) at
D VHSDUDWLRQ GLVWDQFH RI  P DQG  ȍ 'N DQG  ȍ (b) DC
(DC) at a separation distance of 0.15 m. These results indicate Fig. 5. I–V characteristics of a BPD short circuit failure in the impulse
that smaller separation distances lower the failure resistances. current test.
Consequently, the failure resistance of DN is smaller than DC

ICRERA 2019 183

8th International Conference on Renewable Energy Research and Applications
IV. DISCUSSION
We conducted an impulse current test to simulate a
lightning strike near the V-MDL using the impulse current with
a peak of 100 kA passing near the PV-MDL. Therefore, the
BPD in the PV-MDL was shown to experience a short circuit
failure when the separation distance was less than that of the
impulse current. Reasonably, the passage of the impulse
current can be assumed to change the magnetic flux interlinked
with the BPC, which comprises the serially connected solar cell
and the BPD; according to Faraday's law, an electromotive
force is then induced in the BPC. Moreover, the resistance of
the failed BPD is determined to decrease as the distance from
the impulse current becomes smaller. Incidentally, by
employing SBD in this test using a combined waveform with
an open circuit voltage of 1.2/50 μs and a closed-circuit current
of 8/20 μs to conform to the lightning resistance test standard
IEC 61000-4-5 [11] for electronic devices, the failure
resistance of the SBD was shown to decrease as the charge of
the combined waveform increased [12–14]. Therefore, the
magnetic field became stronger as the separation distance
decreased, and the induced electromotive force generated in the
BPC increased and the failure resistance decreased. Similarly,
the failure resistance of DN became smaller than that of DC,
assuming that DC and DN fail simultaneously.
In assessing the effect of the metal frame in a PV-MDL on
its durability, 0.15 m was identified as the maximum distance
between PV-MDLs containing a metal frame and the impulse
current for BPD failure, and 0.4 m was determined to be the
maximum separation distance for systems without a metal
frame. There are two plausible reasons for this observation:
First, the magnetic shielding effect of the metal frame. Second,
the metal frame helps to create a closed circuit so that an
induced electromotive force and an induced current can be
generated in the closed circuit of the metal frame and BPC.
Because this type of induced current would help to negate the
electromotive force being induced in the BPC, the metal frame
likely suppresses BPD failure via this mechanism. This effect
is similar to the finding reported earlier by H. Haeberlin et al.
[15-17].
While BPD failures can exhibit themselves as either open
or short circuit in nature, all BPD failures in this induction
lightning test were short circuit failures. However, because the
wavefront value of lightning current is generally 100 kA or
less, induced lightning damage tests leading to open failures in
BPDs are probably often caused by the events occurring after
the short circuit failure that are produced via direct or induced
lightning. Therefore, the latter mechanism would include heat
generation due to a backflow current from a healthy string,
assuming that the backflow prevention diode failed
simultaneously with the BPD, and the circulation of generated
current in a cluster including a short circuit-failed BPD; both
have been previously demonstrated by experiments and
simulations [9–10, 18]. In this test, the impulse current
waveform had a rise time of about 20 μs at its peak, while the
impulse current of the direct strike specified in IEC 60060-1
had a rise time of 10 μs from the virtual zero time to the virtual
peak. This distinction suggests that BPDs might even fail at
distances longer than those indicated by our test results,
assuming a lightning impulse current whose rise time is faster
ICRERA 2019
Brasov, ROMANIA, Nov. 3-6, 2019
than was used in this test (which resembles the standard test
waveform). Moreover, the PVS damage due to the induced
lightning is added to the superimposed PV-MDL's power
generation due to the induction of wires and lightning. Further
research is needed to elucidate the failure mechanisms related
to the induced lightning of PVSs.
V. CONCLUSIONS
The present work investigated the impact of lightning on
the BPD in a PV module. The impulse current with a peak of
100 kA was introduced to simulate a lightning current passing
near the PV module. The results indicate that BPDs in a PV
module containing a metal frame fail at distances 0.15 m or
less between the module and lightning current. In contrast,
BPDs without a metal frame failed at distances as far as 0.4 m
away, suggesting that the metal frame of the PV module
suppresses the induced current. Moreover, all BPD failures
associated with the induced lightning were characterized as
short circuit failures, and the failure resistance of the BPDs was
found to decrease as it was placed closer to the impulse current.
Thus, open failures are rarely caused by induced lightning and
only occur in BPDs via direct lightning on the PV module,
reverse current from a healthy string, or circulating current in a
cluster.
ACKNOWLEDGMENT
A part of this study was supported by the New Energy and
Industrial Technology Development Organization (NEDO) and
Power Academy.
REFERENCES
[1] Ministry for Economy, Trade and Industry (METI), “Japan’s Electricity
Market Reform and Beyond”, 2015.
[2] Vincenzo Di Dio et al, “The evolution of the FIT mechanism in Italy for
PV systems: A critical analysis”, Proc. of ICRERA2013, 2013.
[3] F. Blaabjerg et al., “Power Electronics for Renewable Energy Systems:
Wind Turbine and Photovoltaic Systems”, Proc. of ICRERA2013, 2013.
[4] Girolamo Di Francia, “The effect of technological innovations on the
cost of the photovoltaic electricity”, Proc. of ICRERA2015, 2015.
[5] Koreyuki Takeya, “Photovoltaic System Case Study Guide; Lightning
Protection and Design Method,” Design Technology Series, pp. 94-99,
2015.
[6] Mark Koentges et al., “Review of Failuers of Photovoltaic Modules”,
Photovoltaic Power Systems Program, Report IEA-PVPS T13-01, 2014.
[7] S. Oke et al., “CHARACTERISTICS AND RISKS OF BROKEN
BYPAS DIODE WITH INDUCED LIGHTNING”, Proc. of GRE2018,
P-Pv-2-29, 2018.
[8] S. Oke et al, “I-V Characteristics of Broken Bypas Diode on PV
module”, Proc. of 35th EU-PVSEC, 2018, pp. 1996-2000.
[9] S. Oke et al, “Influence of Induced lightning on Photovoltaic Power
Generation Equipment”, The Annual Meeting record I. E. E. Japan, 2019,
pp. S6(13)-6(16).
[10] S. Oke et al., “Elucidation of Overheating and Firing Processes of PV
Module which was Damaged by Induced Lightning”, Proceedings of
JSES/JWEA Joint Conference, No. 79, pp. 285-288, 2016.
[11] Japanese Industrial Standards, “Electromagnetic Compatibility (EMC) --
Part 4-5: Testing and Measurement Techniques -- Surge Immunity
Test,” Japanese Industrial Standards Committee, 2011.
[12] T. Hamada et al., “Breakdown Characteristics of Schottky Barrier Diode
for PV Module Using Induced Lightning Surge”, Proc. of ICEE2018,
No. G4-2013, 2018, pp.1787-1790.
184
8th International Conference on Renewable Energy Research and Applications
[13] T. Hamada et al., “Characteristics of Failure Schottky Barrier Diode and
PN Junction Diode for Bypass Diode Using Induced Lightning Surge
Test”, Proc. of ICRERA2018, 2018, pp.482-486.
[14] T. Hamada et al., “Failure Characteristics of Schottky Barrier Diodes for
Photovoltaic Modules Short-Circuited by Lightning-Induced Surges”,
Proc. of ICEE2019, 2019.
[15] H. 季 Haeberlin, 季 “Interference季 Voltages季 induced 季 by 季 Magnetic
Fields 季 of 季 Simulated 季 Lihgtning 季 Currents 季 in 季 Photovoltaic
Modules and Arrays”, Proc. of 17th EU-PVSEC, 2001, pp. 2343-2346.
[16] H. Haeberlin, “Damages at Bypass Diodes by Induced Voltages and
Currents in PV Modules Caused by Nearby Lightning Currents”, Proc.
of 22th EU-PVSEC, 2007.
ICRERA 2019
Brasov, ROMANIA, Nov. 3-6, 2019
[17] H. Haeberlin, M. Kaempfer, “Measurement of Damages at Bypass
Diodes by Inuced Voltages and Currents in PV Modules Caused by
Nearby Lightning Currents with Standard Waveform”, Proc. of 23th EU-
PVSEC, 2008.
[18] N. Ishikura et al., “Simulation Analysis of Really Occurred Accident
Caused by Short Circuit Failure of Blocking Diode and Bypass Circuit
in the Photovoltaics System”, Proc. of ICRERA2018, 2018, pp.533-536.
[19] N. Ahmadi et al, “Frequency-Dependent Modeling of Grounding System
in EMTP for Lightning Transient Studies of Grid-Connected PV
Systems”, Proc. of ICRERA2015, 2015.
185