Professional Documents
Culture Documents
16.03.2023
Materials
L Length
R=ρ
A
Cross-sectional area
• Group IV element in the periodic table, such as silicon (S) and germanium (Ge)
• A material that has been intentionally doped with impurities to increase its
electrical conductivity
Intrinsic Semiconductor
T↑
n = p = ni
np = ni2
p: Concentration of holes
ni: number of free electrons and holes in a unit volume (cm3) of intrinsic silicon at a given temperature
• T is the temperature in K
Doped Semiconductors
pn = ni2
n type
ND NA
p ≈ NA ≫ ni
n ≈ ND ≫ ni
p type
ni2 ni2
p≈ n≈
ND NA
Current density
Ip + -
Jp = = qpvp−drift
A
I L
Jn = n = − qnvn−drift R=ρ
A A
1
J = Jp + Jn = q(pμp + nμn)E → J = E/ρ ρ=
q(pμp + nμn)
Physical Structure
+ -
Di usion current
Drift current
- + + -
Barrier voltage
Zender Diode
rz ≈ 20 Ω
VZ = VZ0 + IZrz