-Conauetoi Lpioaucti, Una.

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

MJ16010, MJ16012, MJH16010, MJH16012

5-A Switchesjf \r Transistors

High-Voltage N-P-N Types for Off-Line Power Supplies TERMINAL DESIGNATIONS
and Other High-Voltage Switching Applications
• (FLAN9EI
Features: Applications:
• Fast switching speed I Oil-Una power supplies
• High-voltage ratings. I High-voltage inverters MJIB010
Vc(v - 850 V I Switching regulators MJI6012
• Low vcilsat> at lc - IDA
«c»- irstt
JEDEC TO-204AA
(200 mil diameter pin holallon)

COLLECTOR , MJH16010
FLANG* MJH16012

TOP view
JEDEC TO-218AC

The MJ16010. MJ16012, MJH16010. and MJH16012
SwitchMax II series of silicon n-p-n power transistors fea-
ture high voltage capability, last switching speeds, and low
saturation voltages, together with high safe-operating-area
(SOA) ratings They are specially designed for off-line power
supplies, converter circuits, and pulse-width-modulated
regulators These high-voltage, high-speed transistors are
tested for parameters that are essential to the design of
high-power switching circuits Switching times, including
inductive turn-off time, and saturation voltages are specified
at 100°C to provide informatton necessary for worst-case
design.
The MJ16010 and MJ16012 transistors are supplied in steer
JEDEC TO-204AA hermetic packages. The MJH16010 and
MJH16012 transistors are supplied in JEDEC TO-218AC
plastic packages.

MAXIMUM RATINGS, Absolute-Maximum Values:

MJ16010 MJH16010
MJ16012 MJH16012

flflfi V
' V
VEBG • • fi V
l e (sat) . . . m A
A
5fl
A
in A
1S . A
PT
@ T C = 25°C 17S 135 W
@T^ = ioo°c mn R3.R W
Tc above 25° C, derate linearly 1ftfi W/"C
-A.S In 9nO -ftft tn 1fin °C
TL
At distance £ 1/8" in (3.17 mm) from
seating plane for 10 s max _235.

At distance > 1/16" in. (1 58 mm) from

seating plane for 10 s max .235. °C
TSJC • - 1. . 0.93 . °c/w

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Seini-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
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 MJ16010, MJ16012, MJH16010. MJH1fi019

MJ16010, MJH16010
ELECTRICAL CHARACTERISTICS ITC ' 25°C unlass otherwise noted)
Characteristic Symbol | Min [ TYP | Max [ Unit |

OFF CHARACTERISTICS (1)

Collector-Emitter Sustaining Voltage VCEO(3U3) 450 — — Vdc
|lc» 100mA. 18 = 0)
Collector Cutoff Current ICEV mAdo
IVcEV -- 850 Vdc. V8E(off) = 1 & Vdc| - - 0.25
| VCEV = 850 Vdc, V8E(0|f ) - 1 5 Vdc. TC = 1 00°C| 1,5
Collector Cutoff Current ICER — — 2.6 mAdc
|VCE = 850 Vdc. RBE = 80 0. TC = 100°CI
Emitter Cutoff Current >EBO — ^* 1.0 mAdc
(VEB = 6 0 vdc, ic - 01
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased 'S/b See Figure 1
Clamped Inductive SOA with Base Reverse Biased RBSOA Saa Figure 2

ON CHARACTERISTICS |11
Collector-Emitter Saturation Voltage vCE(sat) Vdc
He - 5 0 Adc. IB - °7 Ad£) - 0.5 2.S
(!(;= 10 Adc, lg= 1 3 Adc) 1.0 3.0
|IC = 10 Adc. IB - 1 3 Adc. Tc = 100°C) 3.0
aasa-Einitter Saturation Voltage vBE(sat) Vdc
ll c = 10 Adc. IB' ' 3 Adc) - 1.0 1.5
HC « 10 Adc. IB = 1 3 Adc. TC - 100»C) 1.5
DC Current Gam IFE 5.0 ~ — —
(l c = 15 Adc. VCE= 50 Vdc)

DYNAMIC CHARACTERISTICS
Output Capacitance Cob — — 400 PF
|V CB = lOVdc. I E =0. f,«,= 10kHz)

SWITCHING CHARACTERISTICS
Retittlve Load
Delay Time
HC= 10 Adc.
Id — 40 — ns
Risa Time dB2 " 2 6 Adc. Ir — 100 —
Vcc =250 Vdc.
Storage Time R B = 1 6 HI >S — 1400 —
IBI = 1 3 Adc.
Fall Time 'f — 140 —
PW = 30 KS.
Storage Time Is — 600 —
Duty Cycle <S2 0%) (VBEIOffl'S-OVW
Fall Time If — 100 —
Inductive Load
Storage Time <SV - 600 1800 ns
Fall Time [l c = 10 Adc. (T C = 100-C) Ifl — 50 200
Crossover Time IBI = 1 3 Adc. tc — 100 250
Storage Time V B £loff)*50Vdc. Isv — 860 —
Fall Time VcE(pk) = 400 Vdc) (TC= i5o°c> III — 40 —
Crossover Time Ic — 80 -
(II Pulse Ten PuliB Width = 300 us. Duly Cycle < 2 0%

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 MJ16012, MJH16012
ELECTRICAL CHARACTERISTICS (Tc = 7S»C unless otherwise hmadl
Characterise Symbol Mln Typ Max Unit
OFF CHARACTERISTICS (1)
Collector-Emitter Susteming Voltage vCEO(sus) 450 — - Vdc
dc* 100mA. Ig -0)
Collector Cutoff Current ICEV mAdc
(VCEV = 850 Vdc. VBE(Qf() -- 1 5 VdC) - - 0.25
(VCEV = 850 Vdc. VBE(off) - 1 5 Vdc. Tc = 100°C) 1.5
Collector Cutoff Current 'CER — — 2.6 mAdc
(VCE = 850 Vdc, RBE * so n. TC = ioo°ci
Emitter Cutoff Current IEBO — — 1.0 mAdc
|VEB = 6 0 Vdc. Ic - 0)

SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased 'S/b See Figure 1
Clamped Inductive SOA with Base Reverse Biased RBSOA See Figure 2
ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage vCE(sat) Vdc
dC = 5 0 Adc. IB = 0 5 Adc) - 2.S
dc- 10 Adc. IB = 1 OAdc) - 3.0
dc = '0 Adc. IQ = 1 0 Adc. TC = 100°C) 3.0
Base-Emitter Saturation Voltage v8E(sal) Vdc
(l c = 10 Adc, IB> 1 OAdc) - - 1.S
(1C = 10 Adc. IB = 1 OAdc. Tc = 100"C) 1,6
DC Current Gam "FE 7.0 — — —
(IC= 15 Adc. VCE = 50Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance Cob — — 400 pf
(VCB = 10 vdc, IE = o. f,es, = i o ICHD
SWITCHING CHARACTERISTICS
Resistive Load
Delay Time
(l c = 10 Adc.
>d - 40 — ns
Rise Time dB2 =20 Adc. tr — 100
VCC = 250 Vdc.
Storage Time R B = 1 60) Is — 1400 —
IB] - 1 OAdc.
Fall Time If — 140
PW - 30 us.
Storage Time >s — 600 —
Duty Cycle =S2 0%) •VflEloffl = 5 0 Vdc]
Fall Time If - 100 —
Inductive Load
Storage Time Isv - 800 1500 ns
Fall Time dC= lOAdc. |T C = 100°C) '« — 50 ISO
Crossover Time IB1 = 1 0 Adc. <c — 100 200
Storage Time vBE|Qffl = 50Vdc, 'sv — 860 -
Fall Time VcE(pk) = "OOVdcl (T C = 150°C) Ifl — 40
—
Crossover Time tc — 80 —
ID PuluTgsl PulM Width = 300 us. Duty Cycle S 2 0»

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