AO3415

20V P-Channel MOSFET

General Description Product Summary

The AO3415 uses advanced trench technology to provide VDS -20V

excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -4A
voltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS= -4.5V) < 41mΩ
a load switch applications.
RDS(ON) (at VGS= -2.5V) < 53mΩ
RDS(ON) (at VGS= -1.8V) < 65mΩ

ESD protected

SOT23
Top View Bottom View D

S
G S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±8 V
Continuous Drain TA=25°C -4
ID
Current TA=70°C -3.5 A
C
Pulsed Drain Current IDM -30
TA=25°C 1.5
PD W
Power Dissipation B TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 65 80 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 85 100 °C/W
Maximum Junction-to-Lead Steady-State RθJL 43 52 °C/W

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 AO3415

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -20 V
VDS=-20V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS= ±8V ±10 µA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µΑ -0.3 -0.57 -0.9 V
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -30 A
VGS=-4.5V, ID=-4A 34 41
mΩ
TJ=125°C 49 59
RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-4A 42 53 mΩ
VGS=-1.8V, ID=-2A 52 65 mΩ
VGS=-1.5V, ID=-1A 61 mΩ
gFS Forward Transconductance VDS=-5V, ID=-4A 20 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.64 -1 V
IS Maximum Body-Diode Continuous Current -2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 600 751 905 pF
Coss Output Capacitance VGS=0V, VDS=-10V, f=1MHz 80 115 150 pF
Crss Reverse Transfer Capacitance 48 80 115 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 6 13 20 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 7.4 9.3 11 nC
Qgs Gate Source Charge VGS=-4.5V, VDS=-10V, ID=-4A 0.8 1 1.2 nC
Qgd Gate Drain Charge 1.3 2.2 3.1 nC
tD(on) Turn-On DelayTime 13 ns
tr Turn-On Rise Time VGS=-4.5V, VDS=-10V, RL=2.5Ω, 9 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 19 ns
tf Turn-Off Fall Time 29 ns
trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=500A/µs 20 26 32 ns
Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=500A/µs 40 51 62 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AO3415

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

40 15
-8V -4.5V
35 VDS=-5V
-3.0V 12
30
-2.5V
25 9
-ID (A)

-ID(A)
20
-2.0V 6
15

10
3 125°C 25°C
5 VGS=-1.5V

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

100 1.60
ID=-4A, VGS=-4.5V
Normalized On-Resistance
VGS=-1.5V
80 1.40 ID=-4A, VGS=-2.5V
Ω)
RDS(ON) (mΩ

60 1.20
VGS=-1.8V ID=-2A, VGS=-1.8V

40 VGS=-2.5V 1.00

VGS=-4.5V
20 0.80
0 2 4 6 8 10 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)

120 1.0E+01
ID=-4A
1.0E+00
100

1.0E-01
Ω)

80 125°C 25°C
RDS(ON) (mΩ

-IS (A)

1.0E-02
60
125°C 1.0E-03

40 1.0E-04

25°C
20 1.0E-05
0 2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AO3415

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 1400
VDS=-10V
ID=-4A 1200
4
1000

Capacitance (pF)
Ciss
-VGS (Volts)

3
800

2 600

400
Coss
1
200

Crss
0 0
0 2 4 6 8 10 12 0 5 10 15 20
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 1000
TJ(Max)=150°C
10µs TA=25°C
10.0
RDS(ON) 100
100µs
Power (W)

limited
-ID (Amps)

1.0 1ms
10ms
10
DC 100ms
0.1
10s
TJ(Max)=150°C
TA=25°C 1
0.0
0.00001 0.001 0.1 10 1000
0.01 0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe Ambient (Note F)
Operating Area (Note F)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=100°C/W

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AO3415

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

R esistive Sw itching Test C ircuit & W aveform s

RL
V ds to n t o ff

td(o n) tr t d(o ff) tf

Vgs
-
Vgs DUT V DC
V dd 90%
Rg
+

V gs 10%
V ds

D iode R e covery Te st C ircuit & W aveform s

V ds + Q rr = - Idt
DUT
V gs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ V dd -I R M
V gs VDC
V dd
Ig
- -Vds

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