TShort Answeró

I·Define Rectifter and orite types of rectifiers.

A Rectifier: he circust ohich is
Used is converting AC
Siqnat into pulsating De is called Rectifier.
Generally Rectifters are classified into 3 types-They are
D'Half uave
Tectifierh
Full v0ave rectifier e2
B8ridge recijter.
2- |Define ripple Factor? And orite
ripple factor of hat wave
rectifier
ARipple Factor : The ratio oB ms Value of Ac
Component to
the pC Component in the output is knovon as vipple factor.
Vms-1 Vgms Vm, Vac Vo
VVVoc

Vo

|3-1-21)
3 ohat is need of flter in the rectifiers and urite tHpes of
Jlters.
A Rectifter is an electrical device that Coverts Ac into De
By using One tr more diodes. But the outpt of rectifes
ia pulsating DC. Hence, to remoe ll the Ac Component
we Use ftlters.
 Fllers can be classifted tato 4 types they are
Capacttor Flter Cc- Fiter)
2fnductor Filter (&-Fitter)
32C filter
4CLC flter
4-efine cltgper ?ist out diffucnt types of clippers.
A CLIPPER:Clippers are the circuit that employ díode to
clip Some portion of an input signal oithout distorting
temaining part of applied wave form.
Yhese aure of stypes
Series ciipper
|2 Shunt o) parallel clgper
|3-Te0 level cligper
5 Define Haf wave Rectifier ?
Drauo the input and Output
A 0aveforms.
HALF WOAVE RECTIFIER :A hat 0ave rectifter
conwerts
Signal to DC By passing esther the negativeo) posttivean Ac
half-cycle of the voave form and 6locking the Other.
frput voave form Output wave form.
t
 bebxeen halfave and Fullwave rectifter
60rite ditferences
FULL AVE RECTIFIER
HALF WAVE RECT IFIER
Ödt Converts onlyone -half (üfn Converts entire cycle fF
the Ac cyele into plsatig Ac intopulsating DC.
DC.
(GEficiency ts Less Efeciency is high
iÜRipole is high iRiPple is less
|üDJA requires two diodes.
yt requires one diode
4 Define Clamper and orite the types of clamper. changes
A CLAMPER: Clamper is an electronic circuit that
the bc level Qf a signal to the desired level oithout
chanqing the shape f the applied signal,
Clamper Circuits are f two tyPes :
)positive clamper
) Neqative clanper
8 Define peak fnverse Voltage af Fult woave rectifter?
A PEAK 2NVERSE VOLTAGE: It is the mazimum soltage that
the diode Can oithstand duing Reyerse bias
Condition
ff applted voltage is more than peak nverse voltage
the diode will destroy.
The peak nverse voltaq jor Full ave reclifier is 2Yas
9:What are the disadvantages the half WAVe Tectfer?
ADisaduantages f half o£ve rectyier are :
igh ripele jactor
oo rectificatton efficiency
lae Thansfox mer utilization factor
>OC Saturation of transforner Secondary sinding
lo. Define eficiency of a full uave rectifter ?
AEFFCIENCY: St is the vatio febween the output DC.
pOwer and fnput Ac pouoer.
PAC
fac -Vams Poc-Vic
RL

RL Vms Vsms
n: 4ro x

7= 081G
 ong Answers
I-|Explain the Cperation of Half wave Rectifer volth neat
Sketch and derive RMS voltage (Vms)
A HALF WAVE RECTIFIER :
Vout

3HWR

BLOCK DIAGRAM.
Vin 230V
Ac input

YS

Vin - Vo Sinuot
CIRCUIT DIA"RAM.
’whenever the sine oave signal is applied as a input
to the hal; voave rectifcer, tt alous
the sine wave and rejects the Other only one hat of
’t Converts an AC voltaqe to hale of the Sineave,
Using one hatf of pulsating Dc voltaqe
the applicd voltaqe.
>Ouring positlve hasf cycle the diode is in forard
biased condttio Cnd act as a short
So, the entire voltage sll circuit (ON COnditior)
appear aoross the oad resis tor:
’During ncqatire hal} yde the diode is in teverse,
6ias condition and act de a open 6usitch so tUhere uil be
10 flous of Curzent to the circuit 60,0uput wsil be Kero.
herefore the Continupus 8ine wave is applied to thös
rectfter then the Output uil be either postile Raf cycle (a)
Neqa tue half ayle based upon the nput eoltaqe.
 RMS Value of HWR?
VeMS T vtydt ; Ve- Vog Siouot; O<t<Vh
WKT Sioo- 1-CoS2 0
2

VknoVosini otdt
T

VRNS
To 2

T/2
:Jidt- J os2ot
2T% dE

2T [e-Ainan T

2T
Sin2-2L(T

2:21t
TJo

2T

2- Enplain the qperation of Full wave Rectlfter ofth neat

6ketch and derive Output De v0lhage (Vde)
AFUL wAVE RECTIFIER :
FWR
T2

BLOCK DIAGRAM
 Full wave rectifier Converts an AC input voltage into
Pukating Oc voltaqe us inq Both Raiy cycles of the
applted Ac 1oltage
t requtres two dicdes. Current flouss ohen
D, Conducks

230V
Ac
olp Vo

V P oet CIRCUIT DIAGRAM.

Vm

2V

WAVE FORM.
Case(i) :During +ve half of the input signal is
applied to the primary voinding o the trangjormer,
the anode of the Dtode D, 6ecomes tVe and
the
anode Of the.diode D, 6ecoMes -Ve then the diode is
in forvoard biased ondition and
6ehaves as Short
Circuit Diode D2 does ot Conduct asd act ds
Oper circuit- he current flouos through the
DI and uoltoge drop aross load resietor is Diode
Same as
the Bolte input voltag
 D

D
Case2):During -ve half cycle the diode Dy is tn Teveree
6igs Condition ad act as a open circuit and it doesnot
Conduct and the diode D, is in forword 6ias Condition
and act as short cicuit Novs floos through the diode
D and the voltage across the load resistor voil! be
equal to he input voltage
Vin

Output voltag (laug on) Voc)

Vocvedt T
V) =Vo 8inuwt; D<t<Te
T= T/2
Thh Vm 8inugt ; Th<t<r

TA JVSinust dt
Th
Th
2Vrnsinuot dt
T

- 2V
1L
3 Discuss in detail about Half voave Rectifier uoth
Capacitive ftlter
|Reckifter pulkating be Filter ovg o

M
HWA Vo

C-Ftlter
BLOCK DIAGRAM
*apacitor shoutd 6e Connected in pauallel voith the
Load resistors
D

Vain

WAVE FORM
CIRCUIT DIAGRAM
*et us a8sume that initially Capa citor is in Completely
discharged State.
At t=o the nput is tve and Capacitor is discharged
Corditin. hen the diode is in forvoord iased Condtion
Ond act ag a Short circuit
Caseij: 0<trt b
4The voltage aoross the capacitor should be 6ame as
the input aplied voltage tence, Capacitor witlqet charqe
till a point Cti) ie it reaches the peak value
Case ü) tist< te

Dtode is in reverse bias Condition and act as Open çrcuit

Then the Copacilor isdischarged to the load resis tor R
V0e cbserye that the Output foro otill it is not purely
DC output voltage and it hos sorne fintt ripple
Vscp-p =Vnay- Voio.

e-|-1 (rom faylors Theprern]

Vinin: Voo (1-t/Re)
RLC

RLC

fRLc
4-0iscuss in Detail about Ful ave Rectifter uoith Capacitive
Filter.

|Rectifier |pukalitg ta Filter

(DY

FWR

BLOCK DIAGRAM.

votiay

OUTPUT WAVE FORM

CIRCUIT DIAGRAM
* et us assume that the Capacitor is ompletely
dischargcd stat.
*At time t-o the inpud is tve and Capaoitor is dischargd
Condition. The diode D, is un foruard 6iased and D2
t6 in Teeroe biased
Case ():0 <t <Thath yta
DI

2
 tThe voltaqe aeross the Capacitor should Be Game s
the input applied voltaqe. tBence the Capacitor willqet
charged tl a point (t) ie it reaches ito mazimum.
|Case ü)T2<t< T

t After reach ing the maximum the capacitor s tarta

|dischaging upto T
* W cbserve that the Output is not pudy Dc Output
BoHaqe and it kas sote jinte ripple.
Vm . R f C d t
2

5 Oejine ctzper ?Ezplairn the Operation f positve clper

hd Negative clipper oith vüavefoms
A CUPPER :Cltppers are the circuit that employ diode to
|clip SoMe Portion Qf Qr tnput signal wthout dtstortioru
emaining part of apled voave form .
* Clippers are also Called as oltage dimiter, Current
|imiter and amplitude &elector.
fOsITIVE CIPPER : Ína positve clipper the pasitive part
is vemoved in the output 6tcause during positie.
half cycle diode is in open ctrcit
 the net half cycle the diode is in closed civast ond
*fn
e qet neqative output
POsITIVE SERIES CUPPER.
K

DFP
D
ON

CIRCUIT DIAGRAM WAVE FORM.

POsITIVE PARAUEL CLIPPER.
V

D D
OFF DFF
N
QN
CIRCUTT DIAGRAM wANE FORM
NEGATIVE CLuPrER :Ín the neqative cltgrer the neqative part
is vemoved in the Output Because during the neqative
fialt aycle diode is in Upen circuib
|haf
* tn the pOSitve half ycde the diode is in short ciruit
and we qet positive output
NEGATIVE 6ERIES CLIPPER:

Vo DoFF D

WAVE, FORM
CIRCUIT DIAGRAM
 NEGATIVE PARALEL CUIER.

Vo

CIRCUIT DIAGRAM WAVE FORM

*he output of the positive avd negative cliper is
as the half wae rectifier arme
6 0hat is clamper ?Eaplain the types Of clamperó in
detail
A-CLAMPER ; Clamper is an electronic circuit that chanqes
the Dc level of a signat to the des ired leyel othout
Chanqing the shape of the aplied voltaqe /sinal.
ypes of clompers i
clamper Ccircutts are of two types
|Opositive clamper
ONegative clanspertue
1pOsITIVE CLAMPER:
Vm

Vin Dclacit
D

fnput waveform pstive Clamper Output wae fovan.

Durt
uring positve Half cycle :
Thediode is in the non-Conduching state ad the
charge stored in the capacitor is cdischarqed. herefre
the voltage appeaned at the Outpt is equal to the
Sunn of voltage in the Capaitor and input voltage
Asa result the cignal shifted uparde.bh
During Neqative Half cycle :
The diode is forard 6iaced and hence no cigna!
ppears at the output he Capacitor chauged trn inverse
Polar ity oith the input voltage . As the input current
(or) w0ltage decreases after attaintrg it6 manimurn
Balue the copacitor holds the chorge until the ci ode
Temains in forward Giaced.
2.NEGATIVE CLAMPER.

Dclevel&

fn put Neqative clanmper output.

During positive Half cycle :
he diode is fonard brased and hexce 10 Signal
Oppeas at Output- As the input deereases after
ataining its maaimum Value Vin the Capacitors hold
the charge until the dicde kemains forward Biased.
During neqative Half cycle :
the diode is in nDIL- Conducttng Gtate ard the
charge stored in the capacitor is discharged. heefore,
the voltaqe appeared at the Out put equal o the Gum
Of voltoge stored in the Capacitor and input voltoge
shich ioave &ame pelority usth eoch other. d6 a esult
the siqnal shifts downvDarda.
 4 what is a clipper ?with the help of
neat diagram
eaplain the concept of too-•evef cliping.
A: CIPPER : CÍtppers are the cicuit that eiploy diode to
cltp SoMe portion Q an input 6ignal uithout distortion
TerNaining put of aPplied ave jorm.
*clgpers re also Called as vottage diniter, current
Limiter and Amplitude seleckor
Two EVEL CLIPPER;
+ Vna

V;
VB VB +

TNPUT TWO LEVEL CUPPER

OUTPUT
*ohen por tions af positlve and neqative half aycles
of the input waye form haye to Be Temoved then two
level clippers are used.
*Dual cltppers are mode by combining the Blased
shunt tve clipper and 6caced Shunt -e clipper.
* During +ve half cycle,the diode D, is forard 6iased
6y the input sply oltage Vi and reverse Brased 6 tihe
6attery voitage Vgi
* On the Other hand,the Oiode O, is reerse 6iased by both
input suprly voltage Vi and Battery voltage Vea.
t Sni tially ,the tnput sugply voltage is less than the
battery voltage.6o the diode D, is reverse bia8ed by the
battery s0ltage Vei
t 8imilarly. the diode D, is Teree 6iased By the kattery
toltaze Ve2As a Tesult, the signal agpears at the Output
 *However, When the input 6upply voltage Vi bccomes
greater than the GaHery voltage Vei, the diode Dy is
forwavd 6iased 6y the input supply vottage A6 a reslk
no signal ppears at the Output
*During -ve half ycle , D, is reerse 6iased 6y 6oth
input supely voltage VË and batlery
*On the other fand, D, is forord uoltoge Ver
Supply voltage V; and reverse biased6tased 6y the inpu
6y the Entery vlg Veu
fnttially. the Batery votage i6 greates than the input
Supply voltage Therefore, the diode Dy ad D, are
6iased 6y the Battery voltagt. torse
* Asa esult, the signal
* when the input 6uply appears at the Output
voltage
6attery voltage Vgg the diodeDy, 6etones qtaker han the
is foruoard 6iased. A6a
TesulE, siqnal appears at the
no
8- Eaplan the Operatton of
Output.
VA veforms. Bridge Rectifter sith neat

Bridqe rectifter Contains 4 diodes- st doeSnot

have any kind of traneformer due to that the
6ize of the circuit wsiu 6e reduced.
|Case (t) : During posittve tHalf
cycle.

* Curing postive half cycle the diodes D, arnd Dy ol

Conduct and act as sAort Circutt and diodes Dyf D
doesnot Conduct 6ccauge ft is equal to applted
wottage act as a open clrcait input
*S0, the Outputt is equal to aplied Input votage.
Case Ci) : During Neqative Haf Cycle
w

Da

Duinq -e half cycle the Diodes Dyf Da vill Condud

amd acts as a short circuit and diodes D2 4 Dy does
not conduet 6ecause it acts as a open circuit.
So, the &ame input voltoge usill appear at the
Output termival oj the Tecifcer
Vavq- Vae 2Moy
 Define the follouing terms of Full uave Rectifcer.
(æ) RIPPLE FACTOR: he atio of ms value of AC
Component to the Dc omponent in the output is knoon
as nipple factor
Vams
(Vde
wkT Vamo- Vny, Vde
Vàc: 2Vm
V2

2Vin)

-0482.
)EFfICIENCY : St is the Tatio Getweern the output Dc
power and tnput ACpower.
Pac RL RL

R Vims

=0812

ie |/man:81-27
(i)FORM FACTOR: St is the radio between ms 1salueand
the awage value
Vdc V2 2Vm

2V5
FF 1|
(iy PEAK FACTDR:St is the vatio between the
beak value
and ms Value of the Tectifter.
PF: Peak Value Vas
RMS Valuu

PF-V2
(VTRANSFORMER UTILZATION FACTOR: (TUF)
# is defined as the Tatto of De output pouwer to the
Ac vating secondary shding.
TUF: TUF Df Primary +TUF Qf oecondary
2
Stcondary sinding TuF =Pde
TUF =0"8|1
fAc(rated)
Io-) An suprly of 230V is applicd to haf soave Tectifter thaough
transformer hauing tuns Tatlo of 10:1-F(nd the
|Ö) DeOutput voltaqe (Vac)
|üpeak fnerec Voltage of Diode.
Gven, p/ns l0,
Vrms 23ov
Mazirnurn primary voltage,
Vp V2x V,ms Vax 280- 815:8 V
Masi mum Seuo ndary voltage
Vom Vpa XAs- 825-3L,82-53V
af wave rekijied arrent, Dder Je
O) DC but pud. boltag e Ddcx RL

3253

ypeak fnverge voltoge =Vy

-82:53 V
 wave
b) Wrtt the Conyparision betuxen half wve Rectifer, Full
Rectifier and Bride Ac
6ignal
used.Rectijler.
8c
8ignal tilizatlor peak
*Transfrmer tnerse
voltage
is O-48
BRIDGE diode
RECTIFIER.not C *Form
factor-1-il
factor-
is yde
d is
convertad
ito
function
Voc-
2Vo
factor
-o"812.
me
4ransfor Ripple
whole
*four
Used.
#* t *
usedTransformer
sqral
sigral on
voltcqe
ER
oris Dc
lecatt -O-48
RECTIFI Ac *Formfactor
=|:1|
dioediode
trcto wt dnverse
tappedof Vbo=
2Vrn 0643factor
Transformer
Cyde
Converted 2Vm
junctton
WAVE double
ohole
Center
is
Used. - Ripplepeak
factos -
RUL Ometwo «
is
Transformer* a
* *
Utilization
RECTIFIER aycdetopulsattng
De
stgnal. *
Form
factor-l-51 vollage
semiconductor signal
*One b24
halj -factor
=0:287
diode
is
used.
ac Mer fnverse
converts
WAVE nary appled V Voc=
A ransfoa
is
used. *Ripple
factor Peak
HALF Ordi
St *
* * of *
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 UNIT-4
PART- A
4Drau he Symbols of N-channel JFET ad p-channel Teer
N-chamel TreT Syntel for pehamel JAET
Ans Symtbol for

2.Defe te teminals of JEET

ArsJFET :- Tt fs agtemíhal devce namely Giate(6], Sousce [s
unipolar devte. The Cenducton o
|Dra'n [o,t B an
to -Plouw of es (os] haes.
Cusent onty due
temnal.
terminal
6ate tema acts as

Contolled
TFET is a \atage
|Why a feld 6fe ot Toanststos s Called o ?
3. a
So named heak
because a
toanststor ase
Ans feld efet one electrode Coeates
electal Slynal Corntng
thrugh tte 2est 2est of te bansistoy.
electteal ield
field trough
betueen N-channel JeET and
4t e tte dffeaen ces
Woite
p-channel JPET
N-channel JFET 4 pchannel JPET
a e te
-follaing
N-channel JPET Pcharel JPET
The Cument Cenditon takes The cuent Condbfon
place che to electons takes place due to holes.
 Mobry f clectons ae Mobilty of eleetns ase
lage poor
Ts tansconductnce ts
Ts tans Cenductance fs
Smat.
lage N-channel JFET " Symbal of p-channel TeET
Syntol of

6. Deftne Mutual Con ductanee of FET ??

M.hual Conductnce lor Trans Cenductance -
Tt s detined as te ato of change în dhasn Cuet
te
te Conespordtng change intn the gate
Ra)
|(a) to
Vojtage Vgs , at Constant
Sousce
at Constant AVde.
AVgs
6 Defne phch-off Voltage Vtase
-Ans Tn (JFET) phch-of" efes to te thoeshald off
below which tte transktor -tuns of te phch
Cusent
Vds when
Vds
e the Value of
\bftage
reaches Constant
Satuaton Value

What s MosPET ? How many types Cf MOsPETS

asethCoe ?

Ans MoSFET
Metal-oxíde Semicon ductor teld- efect banststoy tte
Conductive channel bet betueen tte dyasn and Surce
Contact Cortolled by a met gate Separated
 LBpm te channel ya Vey thn nsulatihg loyer of
oxtde
MosFET s of tuo types they aei-
MosFET

Depleton Fancemet

N-channel pchannel N-chonnel pehame

of 2v 8 agled to JreT
JPET,
euerse gate \Loltae
When a elerse
A, Detenhe the esktance
the ate cunent InA ,

Sasce.
betueen qpte (2/
Sauste loltages given
Sol- The ate to
GateCuet Iç-tmA
betueen gate 4 Saisce
Resiston e

4 Estabtsh te aelatonshp among PeT paonctes

Sol We haue = dVas

Vas
mutylgg 4 oulig
Vas
 Cest Smbods fo N-chanmel Enhancement
lo- Doaw te
and Depetton MasfET

Ars.

Substratep
subibtep

Hq:- Syrbol fo Nhchanel charnel tepletn

Enharcement
MSFET

Constucten of N-chennel JPET with

1. Explan te
neat Dacda (D)
Deplebin nohme teminals
Arne Sybol
Gate charrel
(a)

e
Sacecs)
N- type
Senscorducto Bas
Ntye emttondectoy Bao.

of a N-tpe Bar wheh s made of sticon

B Conssts
ohme Cortacts (tesminals|. made at te end of te Bar,
Called Souote, Gate and Doain.
 Source i(s)i
Th teynhal s Connected -to -the Ve Pole of the
decbns whteh ae majoty chage Caries în the
ter bas thoug this temnal.
bar enter
N-type
Daan (o): tVe pole the
to te
Th& teoíno s Connected -tss
.Camieea leave te ts tnough
Batey -e magohy

Gute (G): scon dfused o bot

coped p-type whfck pv
sdes of the
Hteay Slcon ba by
fohned
tormel. These layers
Junctions Callel
and
togeter
Channel betueen the depletton
bal
off te N-typo
The segn chanel. Majoty Casoiel& moVe fem
region is called potentfal defference (Vas)
to doa, when
Sdlce doasn.
te Soulce and
te

Opolatfon;
Istally, wher Vas>0, Vos =o
ancd
Whes fs appliec bw Datn Source
-te thitFoess of tte dedetton tgtog
qate and
an
agourd
’ Ta N-chonel JPET, te elect ase te majoDty
Cariers due to t s nly Cunent Conduction
cheoqe
takes place.
Gate(G)
Sousce(s)
N-chamel. Hain,
(D)

N-channel TFET under appled bfas

Casel) -
aped vlg Nos s Comectel
Ihitally VGs=ov and temtnals. Then Cuent (T,)
bCe
Doasn and Sousce
acsosS de
and Soulce
Daasn

Caselt) - Conmeted to
temal ef te Bateny NGs) %
-Ve of
Gate and We temntnl of te Batteny (os) s
Hence that 'pN Juncton is n
Conneted to Sousce

Reveose based Condttor. Then Deplettn egion width

move in
will be încoeases Te Depletn egfon Spoeads
to N-channal because doped Compaoed
of te Ncharnel . f
to p- efon. fraly, te codth
be decease
 s t decAs es te nent )lauthg thrcgh th chamel.
thrgh te
(To) loutg thoougk te chanel. s
Shce, the aument
(Vas) so JeET s Called altage
Cantbolled te vottye So
devtee.
Conbcled
Doatn chaactetstts Joutpt
V-2 Chaactertstcs N-chamel JrET
chaactestfes of plotted betuen
chamcteststes f JPET &
he astput atage Vps
aunent ) and outut
autput Strton
betueen Vos V/s Lo
> plot Vasov
(ona ohrnic
VGs-2
Vas=3V
Vas=

o , >Vos(v)

N-channel JPET Vas xo

Note: JFET because qate

-fox N-channel
Ve to p-tyPe Sem?Conuctor.
Vas Connected
temal
pesattn oF p-chanel JrET with
heat
the
R.Explain
(5:p-type Semtconductay bar
Sok :Symbl f pchome JeET
Ssutte p- tyye Sc Dran
Bas
 Gate

N
Source Doat
p-channel
OFET
Composed
s a TFET whcse chamel s -that
S
A p-chamel TFET
a
Caoier. Ths means

holes as te change pfimay -te

pinaily of -tanSstog
tumed on -Cuent flas
when te Consti tutes e
hdcs which channel that
mavement of SUcon
s made with an ptype placed on
termhals
erther sele.
It Silfcon N-type temnas,
Cota'ns a n-type Connected to tte -to either
Connecte to
Jrte leacl ase
The leacls
te dsasn e
Nhrle Channel.
the p-type
ends of the

Gate (G)
VGs N

SourceS Drasn(o)
p-channel

VOS

9:p-chonne! JEET undey applel bfas

-to the gate of a p-chomel JEET,
When no voltage
te Cental p-channel
unent Choles) Ptaus Poecly threugh on"
This Rs why JeET .efened
aye to
to as
nomally
devtes- Even wtthat any Voltoge, tha Conduct tunent
any Voltage
 5

across -bom Souce to 'doan.

te te eminel of batte
to FET,
Naw VGs % appled then pN Juncten in Reelse
Comected to gate încocases- The
daplettn egtn (oe] wt
blas Henee to
width of D"R [Depleton
aegin spod
chamel. autpt
|Doatn charactestis
V-T Chaactertstes
of p-channel TEET be plotted betwcen
Chaactenstts Can
characttstks of JrET (ou) Dasn ts
’ output Lautput Vg
Cunent Vesus Vps
To fatt Vas nput Voltog
frdffeent Values of
of Vas
Souse votege]
VGso
I5tohmic Vas+IV
Vas+2v
VaS=3V
Vas=4V

5 lo 20
Voslv)
pchanel JPET Vasz0

Note fs -Coonected
to pahanmel JeET because gate
to n-type
3. Woite te
te Compaton
Conpaisan between BJT nd FET
tade sheus te major dfeences between
Ansi The
Bllegi Junctton tansist 6JT nd feld efect toenststorPr)
Bipolaai
Paameter BJT FET
A fom BJT stands foy Brpolax ’ FET stands -for feld
Jurcton Taanststor Effect Tbenststor

toansstor which ’A type of tansstor Pn

Deftitorn ’A type of feld s
Uses types of chage which electic
tuoelectons Contool tte fao
and holes used to
Caries Sen?
enoun of cunet in a

kna as
for Conduction Conductor is
Kroun ag

BTT
Doive fows PET.
BJT. the Cucnt To fET, the electc
and ’
type
due to both maoity Cunent flows only de to
minoosty chage Carters.
derce.maforty chage Caries
Thus, t- s a b'polaz Thus it is a untpolal
devce
Temmtnals B77 has thee temials also has thoee
4 colleety termfnals Sounce, Doasn
Emttter, Baje

have
BJT Conssts
of tuo pN ’ PET does not
lpNJunck’ emtttes-base functor PN Junctens.
Junctons
e Collec tor -bae Juncton.
Cunent Controlle FET Sa \Voltage
Control > BJT Ps a
Cantdlled -devke.
elenentdevce
aye of tuo types ’ feT ase also to
Types NpN tansstoy
tansstoy and types :
Nchannel FET and
tanststor
p- chonnel fET:
 Paometer BJT FET
8JT has thoee Conthsatoni FET also has thee
Commen emitter (ce),
Commen base ce), & Coamen Sousce (s),
Commn Colleetoy cc Comman qate Ca), 4
Comnon doan co).
Relatonstp ’ 8JT has Unear elatrship ’PET has non-Gher
betueen between frput and output
frput and belatnshp betwcen îraut
atut and atput

The Suitehing speed ’ FET has highe

|Suwttehng
BJT
Suitehag specl.
as Susiteh FET 8 used as Sufteh
Agatios’ BTT s used cut-of
>
and Gut-aff
and L ohmfe
[to Sataton
and amplfer Cn gin] and as
Co satunaton egforn].
active gin
utput chaactesttg of JFEF
detai about
44|Exga[n fn Dran chactettts of Juntn field
and Explan
Daw
effect toonsistar (eer). characteists of
Don
chasateRsts ot JFET
Output
JPET - betwen,C
Coo be plot
chanactestes o TFeT Ddan to
utput vs Vos
Cwent Values Vas latpt
d;ffeent
Scuyce Vlg]
Vottage)
 -fy n-channel JEET VGs <oV
Byadou)
P-channel JFET VGs oV
0V
foy
Acthe eeg'sn fos
ehchat Ren Satioon
ohmtc areakdun Toss -
Toss pinchig
NGS-Iy pofnt
N6S-2V
VGs= 3V

Vos )
with
hgt op haraclestcs
2oeVe, Loss s
h TAT We ned to obin te Values e Loss
Hemaxtmum datn sent and tte Gondrtion to obtain

Tosso
ossgac Npphchoffvoltage Vp 4V Los =smA
Nouw we ineease tte Vos
Inittally Nos ov , then lo=Cmp
we fncaease te degletton
Rncaease Bneanly and after Some time thes e
alo teu incease
ale touchtng each other and
tco depleton Vps
Callel
when tis hapgen
te coprg
as pínch
Constant becau'
And the Daatn Grnent (To) il becone
Vexy naow incease
te chanel become
hot încease it will emaln
Vos
Constant
 Tf te Vas moe and moe -Ve
[-iv, 20, -3V, -4u] mea
We ade
Moge Ve potental to tie ptye mateotal
and ths
nczease te Revesse Revese blastng , ts
oill also
the Deple-ton
molies width of the Depletten
tayer
When Depleton egin hceases te pinch cff oltage wil
lauei Vale of Vos
achieve at the lowe
Sernfeonctr
Canctneusly ten any
ps
byeakdon Cond?tion.
be in
Devce

0<Vos<Vp fs
Knoun chmte Regin.
as
between than pinchaf Valtoge.
The kegn Regton Vos s Snalle
To thts
"Active Regton -
(max) is kncusn as Active
Vp<Vos <Vos
Regon between be
that an
The votege
Vbs (max) ss te max
Regtn
JFET:
Apglied to

Known as
below VGs Loff s
The Reqion
Characefses of JPET :
outeut chanactenshes
- I (or Doain lo]
Nos for diflecnt Values of
Io
Reattonhip between d

VGs
JPET
Transfey chazacteistes t
Toanley chaactetstks c JFET
Relattonship betn Ih t Vas to deteent alues f Vos.
 Topma)
Dn-chamcterstts ane

Tansfer chaoctertshes Doss

Cyove
Vas=-2W
Vhsz -3y
VGs lof)
-3V

The above obsevcd that te Dran clet (To)

helated to VGs in pasabote maner.

We tna that or JPET o.s the functn f VGs

To- funct [vas].

Tb= Doss[1-i
whee
onstant suantity|.
Loss-’ max- Datn anent
Gate to Source Vottage
Vas-
bltage (censtont vake].
o ’ ptnehff
ten I will fnciease exçrentially
decgese

Deftne feld efect Taonststor (FET) ? And expan

classifttfon of FETS
Solt Fiekd Efect Tion sfstor -[FET
deuke which te
The FET s a
Contiled
ent thruh te egion
electte feld. tence tte me field eet taststoy
name
an

(FET).
 tipodar devtes becaue Cunt lfosi , -% duo to
Caies . o ths Canters fteu s cue
te magority
to donift
mechanßn
tolleed Devce and fETs aje less
Con
’ FET sa Voltage Nolse
to temp and
Senstive s
thgee temtal device- Tt Can be wsed
’ fET s a tte Second gencrton
swtzh- Er's ae
ampfier and
develogecd atter BJTS
tonsistors ,

Coss?fcaton ot PETS - fET Can be

te Constucton, te

lasstfied
Po to two typs
LFETS

JFETS
MoSPETS
Degletton JEETs
Depletton Enharcemnet
Mode Mode

Nchame
yNchaomel
e-chamel JPET Pchannel
p-channe!
JFET : Jncton eld effet tanststoyr.
’ MOsAET: Metal oxfde Semconductor PET Co hsalated gate
FET [TGPET] Metal ox tee steon tranststoy MOST
4. Bplasn the operatfon of Nchanel Enhoncement MosFET
charactetsttes.
with Vat- Ampese [V-
S D
G

Metal
P-type substate
(u) Body
Senicondctor
Sahstrate to
used as
>A Uyhty daped ptye matal sSubstate
-Rbatcate on n-channel MosfET [o Body prouides

physitad suppent ae
Created the
Too eavily dgea
heay O
diffusicn method, These n+
Substate usg "mpuity and Dain.
Sobce
egfns at oxfdattn process"
-foned wslg
also Called theonoy
A tsn byo
fasulator Pt
acks as
t
oxtde leyer. and metol
lod gate tn the Oxde laye
Created to make elects
Contact uts ale Contact Cuts
to these
deestel Prafn
Souce
ith
Contt
s tormed ovel the oxtde ouer
Ansther
metal layer praes. This netl
chemcal bpu dopstto n
uhg Gate!.
act a with the
Conjunctn wtth
Te metal aea q te ate, fn te Semfconductoy.
o so and
frsalatng Osde lye
channel foms pazallel plate Capacitr
’ Enhancem ent 'MOSFET Coes not have ntYpe channel physcally
D' &'s. Ths n-type channel Can be
poesent between
fermed thnough te applRcatton of tVe vlg
electtcaly
at temhal.

Opeatfon of MosFET 9ees tuo vlg andd to Conto

channel
aAled to Create tte
’Vss : Î Bs the chamel
Concductty g
te enhancement MosFET
foy n-chanel enhancemant MasFET
V6s=+Ve fy p-channe enhancement
VGsve Saunte to
to toael tom
Caess
llous the -te
cuet thegh
and thus

devtce MosFET
foy nchannel Enhancement
+ve
Ups
opetaton:

Son
Substate
Thduced
A-chamel(o)

L substate fos
Ndanel EMFET

’ f tte sbstate freunded an Ve Ps

te Gatc, te tve chalge gate îndees an eualVe
 te suts bate se blw s and D Reg fons Thuss an
chaiye
electe fold s
-Hw te Souste and Doain Co)
Regens electe held s pepependelar to tte
The
tte
dhecton ofCoprcitorthrugh te ode
f te mohoñty Cafes
platcs electons hch a
Te -Ve chalge fhvesten aye
substote -foms
te -type Vas) ?hcaeases, te mcluces
tte ate
As
te Ve Hence, te
Sernncuctos
o the Plaus fom s to D.
oage hcoease
and Cuslent
Conduchviy channel.
the
|thag (To) s enhanoed by tVe gate
Thus, te Dasn Glent
Jolma)
Vas =<
VGs=4V

Me
MosFET
-fig:- Vott-Ampete chasscteytstca
] Daa chaoacterstig.
V-T chaacersts
&Expain Ro det abat depletton N-chanel MosFET wt
help of datn chaactete
N-channel
Dephetion MSFET
Arst
we wfU tote p-type substae Ts Substrate
Cannected to Sausce
Satanaly
’ Te Doan and sUTte ae Connected to tLheaiy
dqed].
 The Nt type uell Conneted to each othe to chamel
and
Tle Source
Dadachagala

Nt N-charnc Nt
Metal
p type Substate

Pig: stuctuye of N-chonnel Delettn MosfET

N-chanel & dfuse! betueen te ace and
’ Whese an
MosrET
to the basfe shucte of
Dain
VGG [oVas

+4+tttt
Ntttt+ttl Nt
Noo
(o)
Vos
ubstate
Ciat Symbo)
Ros N-channe!
Deplettn tMSfeT
8Constucton
Cae-) wrt te
Nas 0 and Dousrn (D) at tVe potental
[magnfty chaige aoiesj -flo trauh
Source tle electans
Nchannel fom S to D
the foss
Bectons wil moVe fron s top -VGs=ov
D to s
Caseli)
Nas) made
G-ve)

electas Reanbmntkes place.

fom the Pp-subsate
chancl
Hoes atact touosds e gate

e,e , wheh
ae mojosity Chage
2ecombine wit
When VGs & ond e
epel fom tte channe! p-channel
N-chenel Caiees

holes chfch aye majosty chage te channel so, te

Subbateees. sill desese om
Fo
Vas=o
decese.
total no ale seduced. frally
So
Corducttn cuslert (To)
te At pautelaa point
educes
tte delte. chaaachetsts
chaactestis ?- pY] V-
Drasn

Ioss
NGs= -IV
Vase-2
 4.a) oefne te follawing tems of TrET i) Transconductance
) Daan Rsttaee f0) tmplfaton factos.
Tf Loss s SmA
4mA. TE
|b) A fET has a dan Cuent off
pihchaf? Valtoge is 6V detemie te Value
and
and Soursee oltage (Vas).
Jate
-
Sot a) t ToansConductance o Mutual Corductnce Grol
chaacte Cum.
Cure
tte taansfe
y TH % te slpe oftte ato o change în the
deftred
small change
Coonepnny small change -h te
dann Cuoent to the
at a Constant Daain
gate voltnge ’units tor frn is mho lo
Siemens

AVGs
Vos Canstant

1) Dxado Resktance :-frd)i change n Vos to the

ato fa small
t B detned as te
o te Do at Cnstant goe vlg.
Srnall change

d= vos ) Vps
V6s- Constent

uits
ale chms

aato of a mal! change o te Dia'n Ul, (Vos)

T 8 tte
to the
smal! chonge
Gnstant doa' Cushent To)
at
Was)
 ) We have TpI - Tass Vas
Vaslcfr)

|Vas = -1:6V

-- VpVas (off
om 4 to
lo la) When a everse gate Vol tage of JreT changes 1-6MA
the dnh Cunent s chays fom to -MA.
3.9V,
Values f toansconductance?
ffnd te
about Trasfex chaactesss af JFET.
b) Daaw and explain

Gola) Gitven TrET changs hom 4 to 31v

The gate V¡tage f JEET
|-6A to
Changes
Drasn areat is
The
4.03-9=0-|V

-6-(-3 = D3mA
ALh z
=0.3x(63
tansconuctace, gm =
Theiefoe,
 Tionstes chaactesis of JeET
b))
IolmA)
Tiansier chntotte
Csve VGs-|V
VGs-2/
Vasz-a
Vastf) ’ Vos ()
-V

oatn anet (T) Pss

ti. obeved that te
he akae pamboe mannes.
a
ea selated to
Io tte functen
torJPET
We Knaw that
To-funct (vas)
2
VGS

anstant Buuantity|
amet
Loss- Max. Daatn woltage
Sounte
Gete to
Vss
Valtage (onshunt ale
-’ pinch off
hosense exporantilly
VGs decese ten
UGS
 UNIT-V
I Short Amswer auestons:
1.whatis Zener aiode
desiqned to
Akeavily doped Semi Conduclar diode which isZenerdtode
operate in everse direcion is known as the
Tn Gicrwords ,the diode ofich is Specialiy destgnedl for
Zener diode
Opimising thie breakdown Tegion is knoun as tie
|The SymGolic represention f Zencr diode is Sho wn in -he
fqure belovo.
Anode athode

a. Why is Zener diode used as a voltuqe Tequiator?

The proccss f Keaping output voltage Gonstant regardles
of variation in Tnput voltage is caled as voftaqe Requla
-tion
Zener diode is Specialliy disiqned for tis purpose of
Rreping Output valtage as Constant. So, Zentrdiode Can be
calted as Votaqe requlator.
3.Define Varactor Piode !
The 9iode wio's intemal Capacitance Varics witi the
Variation of tie reverse voltage such type of diode is
known as the Varactor Diode
Te laractor diode is used in a plac uwkere the VariaGle
 Capacitance is reauired , and the Capacitance is Controlled
with the help of thie voltage. Tt is also known as tfie
Voltage lariabte Capacitanca or Tunninq diode
b
Symbol of Varacor diode:

Anode 8catfiode
jarael plate Capacitor.

44 Wiat is Schottfy dioáe?

The Scho ttky diode is a type of metal - Semi Conductor jundio
diode, wiich is also Enown as hot- Carrier diode,low
voltage diode or Schottky cliode
Scholky diode is a Sami Conductor diode witha
fow forward valtaqe drop and very fast Switcing acion
Symbal for Schotky iode :
Catiode

Anode
5 What is meant 6y LED?
A ighit- Emiting dtode (LED) is a Semi Con ductor deviceg
tfiat Emits fight when an Electric Crrent flows tfirouqh
aTe always connected as forward Giased- when
it LEDs
LED, the techons ecombine
CuTTent passes thirouqh an LED
 with hofes emittinq iqht in tfie process
LED SymGol:
Anode Cathode

6 Mention fome of tie aplication_ of uJT

"Used as a Voltaqe tequlator
"Used as a Relaxation osci(Cator
" Used as a Switching Circuit
" Used as a phase Control Grauit
a triqgerin devie for Silicon control
"Widely used as
Tecifiers (sR)
Write tfhe differences between BTT and UTT.
7
BJT
Defination BJT iS a three terminal UJT i5 a tiree temina
tfiret-layer SemiConducor |Seni Cornducor fwttching
device wñich can woTk as device witi only one
a Switch as well asampifier function.
two
Number of Ticre aseony buo PN There is only one pr
PN
PN junchon uncionspresent in BJT-junion present in vTT

terminal
Ternina BJT Aas three terinUJT has tiee
-Is -als (iniller (E), Basetermânal
|Entter (E),Base (B) and (64) and Base terminal2
colector() (B2).
 Structure and Circuit Symbol of UJT.
3. rauw tie basc
Symbol Df UTT: Base 2
(B2)

Eniller
(E)
Basei
(B1)

Basic Strucdure :
Base2 ori otio
(Ba)

N
Emittero P PN Tuncion
()
channel

io Base i

9. raw ie Chara cterisics of LED.

he chaTacderistics CuTVe of
the LED Shows that the
forward Gias of 1V is
Sufficient to increase the
urrent tponrtialiy
Valtage()
10 Oraw tfhe Characteristics of UJTw a
VE
Negative
Lesistance Satuatiom

Cutott

Ip Iv
leakagelo
uTrnt

I Long Answer Questions +

1 Explain how Zener diode acts as a voftage requator.
destqned
Aheavily doped SemiConducbor diode wkich isZener diode
to operaBe in tevese direchon is known as the
Symbol of Zener diode:
Cathode
Anode

Circuit diaqram: Thin Deplelion

Region
N P

Reverse biasing
 The Zencr diode i5is Employcd în raverse Gtasing lhe
iasing means the m-type maternal of the diode i5
reverse
terrinal of tfic sugply and the
Cornneding to the positive
matenal is Conneded to the negative teminal of the
-type
deplction Teqion of the diode is very tin because
Supply 1he Sami Conduckor material.
it is made of the heavily doped
Zener diode as a voftage Requlator :
eeping output voltage constantt reqardless
The process of loftaqe Lequlation.
is calid as Vofage
of tWartation in Tnputvoftage i5
This is tie most important appltcation of Zener dtode,
of Zener diode with dropping resistance 'Rs' in the
|ff Gonsist
Saies and a load resistane, in paraller
Circuit: Rs
Is

Urmqulated Ezqalaed
Irput V RL otput
Vo
Vn

Resistor, 'R is Cor ted in Sertes with the Zener diode

to Imit tfhe Current fow -tfrough the diode with the Votage
SouTCe (Vin). The Stabilised outprt Voltage tout is taken from
acoSs the Zener diode.
The Zener diode is Cornected with ts Cathode teminal
Connected to the positive rail of the De Supply so it is reverse
Giased and wit Ge operated in its Greakdown Condition.
Kesistor Rs is Selected So to limit he maxmum (T(urent floorna.
 4
Working : When Vin Increases o8)1342
As tie input votage increases , Input Gunent (T;)also
încreases.This increases the uTTent thtough Zener diode(Iz
witiout afetmg tie oad Current (I).
Witi thie incrcase în input Gurrcnt the voltage
drop acro55 TeStStor s will also increase, here by
the load voltaqe (Vo) Constant keeping
|Working: Wicn Vin decreascs
s tie input voftage decreases, Input unent(T) also
Tis decreases tfie Current tfirough Zenerdiode (I) decTEase
affecting tie load aurrent (I).
witiout
With the decrease in input aurrernt ie
across vesistor Rs wilt also decrtase, There by voltage drop
Coad to ltaqe o Constant. kecping tie
2pefine Silicon -Controlled Rectiftr (scR) and txplain about
Characeristics of SCR.
A Silicon Controlled Recdifier is a 3terminal and 4
layer
|Semi Conductor Current Contro ling device. It is mainly used in
the deices for the ontrol of high power. Silicon Contolled recfic
i5 also Sometmes Tffered to as SCR diode, 4- layer dto cle,
4-layer deice or TFrgnistor. Tt is madup of a Silicon material
|ohich Controls high qouer and Converts higk Ac Current into
DC Gurent (recsfscation)- ence, t is nammed as Silicon -
Contoled 1ecifter.
 af
(4), directon
-fnode sCk
k
a
Cathod.e
tie
namely for
tepresents operation
terminals it State):
Recificymo) anow of to
modesgiven(off 2 J
tireediode biastng P
drode of (9).1ie Anode(A) Cethode(:)ScR:f Mode J
Consists in typesthe Brocking N
Cortrolled urrcnt
Corventional P operation
threeupon
diodeGate :
SCR
P P
p
(5ilicon Cathode(t), forward
Gate SCR
of
of are dupending
Structure Gat(G e ModesThere
SCR 4 P
 ta becommes I, I1 two anode
givern and junctton
c),I, of reqton flow
juncton în
Ja widtfi
is junction
k ConductGekoen
()Catiode juncion dpletcn
the
not k
the betwen
docs
voftage bctoeen k
the
to case, voltage, This Curcnt to agpled qote terminal.
qiven the
positve flownq4 made
state): Voage.
Tz.
thtswfercas obstacethe votage
bias jundion Ge :&ate) N
is Curent
of ,. Can
he ( In 1evese or majority (oN Greakdown
voltage
as Gtased
junction Gtas at (OFF P
mode, wall modeRecttficr votage
circuted. at tAe P
foraard
the increases
au Glocks and J Mode N
neqativeforoard
Blocking to as the Conáucng the gosttveControled
thc beyond
N
open Giascd.Oue actsTt ierefore,
S Blocksmg P
jumcion mcrcasing
C+), i5 are reqionTs I,-
forward aplying P
A gateG T3 juncion
functton forward
Siicon cathod
depletion Reverse
anode junction
Teverse T between
By and By
In Qnd
and at and
A
2) The ) ) 3)
to ts biasd Statesa
qivengateJsJuncionnobiased,
thenot
(eakag Breakdown
Vevolag
forward
fiqure
voltage
of
amount
an fonward is Conducton
fonoard
4VA thie
tons
i5 in Cuentoff Gocking
forward above tepresents
(-) ), Carriers
Small
tevuse Teg
voltage andGecornes in e region.
Catiodt Teqion the three
S a
feakage
be (ine
are But Eonsistswoilr e Legion
N in intoblocking
(y-axi)
negative junction
to T is the Vertical
Showrn
grveH juncion
Ia Circuit Small
Juncion
SCR tepresents divided
Revee
ciarqe
the the the he sCk.
1s Case, SCR ,.This
operation,
(4) the So sCR:is -IA SCR iS
thesCE 3)
ufereas
of sCR. Forwardot of (-ais)in of
voftage wiereas
and the drift alaent \Reqion leakage
Reverse CurTent fiaracdristics
tfis tiroughfuncin
the of leakage Blocking fowscharaceristcs
CharacteristiCS Reverse
finesCR region
of posttive
In Jfuncttonto
Giased due on
mode cifcuted. turn vottage[Vsg! fe Curren blocking
hoxizontal
fow6rased
flows breakdown acroSs
this ,(+) teversethie CuTrent to
|oroard
Reverse V-I of v-IForward
anode Current tnough
V-I applied
amount
n open atre As he The The
)
 6.
R6cribe tfie Operaton of ghotodiode with neat sletch.
photodiode is a p-N-junction diode that Consumes light
H also called
an tlechsc aurrent. hey are
|tncrqy to produce and a photo -Sensor.
a photo-detecBor, a ighit ddtictor, 1eVerse bias Conditon.
photodiodes are desiqned to worf in

Operatam of photodiode :
A pficto diode is Subjecked to photons in the form of
Gght wich affecks tic eneraton of elcdtron hole pairs -If the
tfie énerqy of tie faling hiobns (n) 4s greater than negy
of fhe bemilomducor material, elecron -hole pair_
gap (Eg) diode. The Electon
are created near tic deplcton region of the
Separaled from tach Otier before retombinb
|Fiole pairs crealed are directton of the
duc to the £ledic field if the funcion. Tic move towards
to
lecric fied in the diode foces the alectons p-ide.
Consequentfy tie hole_ move towards the
the -stde and number of Elecrons on the
As a tesu of the in crease în the
holes on thie p-Side , a Tise in tfie elctromotve
1-Side and
1ow when an tterna Coad i5 Connected to
force is oGserved.
tfie System ,a Gurent flow is observed tirough it.
Since photodiodes gencrate current flso direciy depending
upon the light intenstty received , ticy can Ge used as phot
-deBectors to detect optcal [tq1als- Buift-in lenses and oplical
filters may be used to enhiana tie power and producivty ofa
ohchdiode.
 -oo l o

Deplckon eqjiam

4|Explain thie Construction of Schotky diode wtfi Characeis

-tics
The Si Shottky diode is a type of metal-SemíConductor
juncion diode,wkich is also kniown as hot-Carrier diode, ow
o
voltage diode or Schottky barrier diode.
Skchotky diode ofers fast Sotching acton and kas a
drop.As voe are aware tiat in a PN
|low fornward voltage togther to form
junclton diode, p-type and n-type are joinecl
-whereas , in a Shotky diode metals (Ee
apN,juncion
platinm are used mstcad of p-type SemiConducdor_
Schottky diode Symiol:
fCalhode

Anode.
 Construcion of Schottky diode :
Juncaom
baro
Cathode
Anode
Metal N-type
Silicon

Very Small

Biasting Voltage
The operation telics n the principle that tie Elecrons fn
different matetalp kave difrent potenial tncrqy
N-type 6emi Conductors Raving kiqher potential Enerqy than
tlecthons of metals.
when these tw0 are Grougit into Contact, there is a flow of
Elecrons in bo tf directions aCTOSS the metal- SemiConducor
interface under Eero Bias.
ÞfGiasing voftage is appltcd to the Schottky iat the metal
is Conneched to posttive and N-Type femi Condu ctor is Conneched
bto negatve polertial.
P Because of above Supply voltage, Electrons will move
towards Mekal from N-Type maBertal and it generate_
the tlectric Curet
 V-T chanaderists of Schottky Riode :
V-I Charaderistics of Schottky dioe are veny much
Ihe the dependent
Similar to tie PN juncion diode. urTent is
volagc s independent Vatable in the
Variable witle Sehotky
the
|Schotlky diode. Tie forward
nA)
voltage diop of
CuTrent
diode i5 ow behween 0-2 to o-3 voll_.

-forward
dhanaclertstic_

votage (")
Reverse
Charadestcs

principle and uonking of Tamel diode.

5| Explain he
5.
juncton ciode. The
ATunel Piode is a heavily doped p-n
diode Shows negative reststance. when voftage value
tunnel diode works Cased
increases, Current flow decreases .<Funnel
oT Tunnel sfect.
Symbol ofa Tunnel Diode:
Anode Cathode
 TunelGing Efect:
Tiann dling Ksis knoum as a directimy flow of electron s
actoss the Sma(l depletion teqion from 1-side Conducion
band into tfie p-side Valence band- Charqe Carricrs do not
need amy forrn of inctc enerqy to move acToSs the
junction Tnstead CarYiCrs punch tfirough junction. 1his fet
i6 Caled Tunellina and hencz 4fe diode ts called Tunnel
-diode.
Holo Depletion oFreetlectrons
Region
p-T4pe N-Type
+
e e
e

PN-Junction in fond Bia_Asio

Holes O Depleion Fice lecron_
P-Type Region N-TYpe
e
+
e
o

Tünnel Diode in fowaLd Bias

,Except
’ Tunnel diode is Same as p-N,function Sadiode
widtfh of depletion reqion -The p-N junction diode
tfie to tunnelf dioce
has moTe depletion teq ion wfen Cornpared
+ Tunnel diode has ess width of depletion reqion, tt is
ficavily dopping. It is in nanometers So, the
aue to
tlecdrons can directy tunnel across the Small depleton
reqion from n-side Gonducton band into tfie p-side
Valene 6and. u
In Ordinary diodes , Gurrent is produced ohen tie applecd
votage is qieater tian tie buift-involtage of the depleta
Teqion.But in tumel diodes, aSmalt votage uwkich is les
ian tie Guit-in voltaqe of aeplelion Teqion is enough to
produce Elechic CuTnt
In tunnel iodes , tie electons eed not overcome the opposing,
force from the depletion Cayer to produce tlectric Current. The
Electrons can direci, tunner from he Conductibn Gand of
M-Teqion into tfhe valence band of p-eqion .Thus, tlectric
GuTrent is produced im tunnel diode.
V-I chaaderi stics bf Tunnel Piode:

mA
Fondaent
n
Peak point
l u n n eu
l l ir A
ntgn t

Neqative
Resistance

T 3B} Valley poirtt S

Rererse Bias
Vots i a y Hi
FoTward Bias Votagemb

3olais
Step.:unbiased -tunnel diode
Tic net CurTnt flow will be Zero tumel diode
applted to the
Stepa: SmalC a Smalc forward Gias unne CuTTent .Thus, tunnel
voltage
This will Create Small appkatin of voftage
Curret Starts fowing with a
increased
Stps :Apíca vottage is Stqtiy flows ii
As a result, masimum tunnet arTent
volkaqe is furtfer increased.
Step4:Applicd Start darasing
We tuneling urcnt
Seps:Aypacd voftaqe is larquly tnsrcastly
The tunellngurert Starts tncreastng aan motice thatthe
ChaacBeristcs qraph, we
From the follouing once voftag reduces. so, this
flow of Current will Geteduced for tfis diode he diode
egion of neqatve teststane
is tie absorbtng tt
plaa of
qeneraBts got tn flac
6. Define and discuss tn detai[ about uTT Wth Characeristics
Untjunction ranststor (usD ts a tiree terninal Seni Canduckor
dfevice. UTT IS for ned 6y a Singlo jundion of p-type and
N-ype Semi Con ducor matertal. Tt is used for Sottchitng
abpfcations and it Cannot 6ebe used to amplify Siqnals.
Symíol: Base 2
(B2)
Emitler

Basei
(B1)
Tie Symbol of UJT Cooks Simtlar to tRe
3ymbol of TFE
Except the bent anow. The three termínal; of vJT are
Cmiter, Bases and Base b
Construcfon of 0TT:
Base 2
(82)

Emitter P N
> PN Juncion
(c)
> chamel

Base i
(B:)
The channel 1$is formed of Nty pe and p-type material
ohere N-type is liqRty doped and p-type is highly
doped- Tius, it forns Single PN Juncion diode and this
is tfhe reason tor the ame Unijundion. The teminals
Base a(B2), Base 1 (B) are taken from the N-channelo
thirough tie ohmic Contacs and Emitter taken fom the
heavily doped p-type materíal. The Eniter terminal ts
Closer to the Base 2 terminal than Base 1 teminal.
|Opeuation of tr (unituncion Transstor):
Base 2
(B2)
Emitter (e)
N

VE

Basei (B1i)
working of uTT
When no Vo ftage is applied at the émitler , the resistance
in the channel is high and the device is turned off, tiír
he applcd vollage ts kigker tian the trigqering voltaqe
Wien thie PN junclion is forward biased , positive voltage
is applicd at tie emitter teminal and Base2 i3 made
positve with the Basei. The majority Carier which 4s he
Foles in the. p-Tupe ntus tie NCharnel and Sinca. Base 2
is postive it qets tepeted and attracded touards Bast 1
terminal. So, the tesistance decreases. The Emitter Cunent
ncreases and acies tie peaf and tarts decreastng
Aftr t teaches thie Valey point aqan it start inarcashg
Wien the pN-jundion is reverse 6iased, the entter GTent
doesn't fovo and t is Cut-off.
 \Negative
Resi_tanaReqion.
RSaturcion
reqon.

Cukoff
Reqion

Ip Iy Le
Leakage
Curtent

Gutoff Reqion.: voltaqe is not Sufftcient to

nput
Tntiis reqior the agplicol applicd voltage didn't Teach
um the device oN and the
tie triggenq voltage.
Negatne Resistane Feqion:
Afler the applitd voftaqe reach thie triggering voftage the
fevite is turned oN and tie Emitter voftaqe reaches the peak
Voltage and # diops t Valty point, Even tiouh the Emittla
Current increases. oh8 26
Satumahion Teqion : Jho
agplied voltage increases tfie
In tfus eqion when he Emitter
tmitter vo itagt and tie Emit curent inc1 ea se qra dualG
Ezplain the worEmg prnciple of a Solar ell :Menton its
ppltcations.
A Solar celC (also Known as a photovoltaic cell or PV celt)
iS defned as an tlectrical device that Converts
rto lcrical tnerqy tirough tie photovoftaic Hfect
ASolar cell is basically a p-n junction diode. Solar cells are a
cell, defrned as a device wiose ¬lecdrical
|form of photoelechic catt,
Characker istics -Such as Cunent, votage , or resistance - Vany
when Euposed to iqhit
/Nrckd plalina
Anti eflechng
Coating
eN-type Sslicon Load
P-type Silt con

|Working prinGpíe of a Solar Celta

when iqkt reaches tic p-n junclion, tfie liqht éncrqy,
in tfhe form of photortá , 5upltes Sufficnt encrgy to the
funchiont to Create a number of clecron -hole pairs.The
ina dont Gght breaks tie themal Equili brum Condition
of fie juncion -The frce Electrons in the, depleton reqion
Can quickly come to
thie n-type Side of tfic jundion.
Similarly rie
tic hofes in the depleton can quikly Come to
4iep-type fiác of tic juncion :Once, the newly reatcd
fee tlectrons Come to tie n-type Side, Camot further
CtoSS the iunchion Gecause of Garier potential of the funcion.
 Sinilarly ie noly. created ioles once Come to the Pp
Side Canmot further Goas tie juncio became of Same barrier
potential of the junton. 4s the Concentraton of tlecons Gccomes
igfer ome Side irty n-type Side of the (uncion, fie p-n jundin
oitr Gehave fike a SmalC battery alt -4 vo tage is Schup which
4S knowr as pYuto voftaqe-Tf we Connect a Smalt foad' aross thel
juncion, thicxt wil Ge d tiny Gurent flowing tirough it
V-I
(Amps)Characteristics of a photovoltaic cel':
Py
Current
Short Ctrcuit
urent Maximum
Imaxp pouer pornt(MP)
3-0

2-0
open Grcuit
1-0
Vmatp
15 20
voftage
PV volt

Applicatons :
’ Solar cell's areezkensively used as a Source of power in
Sate(Cites and Solar Vehicles, to Supply power to elechroric
and Other kquipment or to Charge tie batteny
+Solar
-’ cltls are used to generate power in Calcalators and
watches.
º Solar celts are used in phot detection visible and invisiGle).
dunodulation, Cogic Gircits , Suttchng yand so on.
 What 1S an LED ? Give the prinaple of opeation w
diaqram.
light- Emitting diode (LED) i5 a Semi Conduckor device that
Emits light wien an Elctnc Currerit flous tirough t . wh
Current pa sses tirougfh an LED, thie electrons ecombine with
holes emiting liqit in the process- LEDS allow the Curent to
flow in the forward direcion and 6locks the Gurrcnt in the
teverse directon.
LED Symbol:
Anode Cathode

principle of operatin of LED!

P-type n-type

Hole Electron

-Femi level
Kecombination Band gop
oo0 o oooo Valence band

liqht-Ermitting diode Bimply , we known as a diode.

Thc
Wien the diode is foraTd biased, then the ilectons holes
are moving fast across the junctin and they are combined
Constarty ,temoving one- anotfer qut. Soon after the elechron_
 ncrqy
Ii and colour foTward
Exponentially
reconbination.
ce.As usedmatenal; slight
Gqht alloysare indium
it the of material the
Silicon, foTmelechrolumincsCen
the aloys ligit. the
proCSS phosphide
primary and Change thiat
the of urent
p-type intensity the Alhoniniumwhite
(iqht, Show_
thi;every
tn alloys
released ? by twoqallum and yellow the
the In on LED
maxfmum. determined
Thc LED increa_es Voltage
(U)
the
disappear_. phenomenon Glue tfiese LED h
to photons an lement. alloys,
and
o
Kmtted
l i q
the
ts
n-type iS ,increasesof Aluminium qrecn, of
Enerqy of of
charadristteg
of colour
is
Orange
ritride Compostlton curveto
tfiet fom tiis aeachesvoltage the LED
ConducBing, qet
Suffciernt
then the
red, characteri_tics
from the diodes, an are galtum to
ioles, call dclermines
used tie
in and of colourSemiLEDS obtain is
Voft-Ampere
moving We forard is 1v
the Teleased
Standard
photon_. ncreases in dium are Changes (m4) Current
witi tie to alloys of
are is
4ie WiatThe used used
in Tn
the The Gias
of