* DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY,

"DIODES")
* PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND
WITHOUT ANY
* REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF
MERCHANTABILITY
* OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING
OR COURSE OF
* PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE
UNINTERRUPTED,
* OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO
THE MAXIMUM
* EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR
INDIRECT,
* SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN
CONNECTION WITH
* THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF
ACTION OR THEORY
* OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT,
NEGLIGENCE OR OTHER
* TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF
SUCH DAMAGES,
* AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD
TO THE SM
* DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM
DATA.

*SRC=1N4148W;1N4148W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.

.MODEL 1N4148W D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
+ CJO=2.00p M=0.333 N=2.07 TT=5.76n )

*SRC=1N4148W;1N4148W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.

.MODEL 1N4148W D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
+ CJO=2.00p M=0.333 N=2.07 TT=5.76n )

*SRC=1N4148WS;1N4148WS;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.

Switching Diode
.MODEL 1N4148WS D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
+ CJO=2.00p M=0.333 N=2.07 TT=5.76n )

*SRC=1N4148WS;1N4148WS;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.

Switching Diode
.MODEL 1N4148WS D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
+ CJO=2.00p M=0.333 N=2.07 TT=5.76n )

*SRC=1N4148WT;DI_1N4148WT;Diodes;Si; 80.0V 0.125A 4.00ns Diodes Inc.

Switching
.MODEL DI_1N4148WT D ( IS=10.4n RS=51.5m BV=80.0 IBV=1.00u
+ CJO=2.00p M=0.333 N=2.07 TT=5.76n )

*SRC=1N4448HLP;DI_1N4448HLP;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc.

Switching Diode
.MODEL DI_1N4448HLP D ( IS=3.2n RS=0.761 BV=100.0 IBV=100n ISR=5n
+ CJO=1.3p M=0.21 VJ=.5 N=1.88 TT=3n )

*SRC=1N4448HWS;DI_1N4448HWS;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc.

Switching Diode
.MODEL DI_1N4448HWS D ( IS=24.7n RS=84.4m BV=80.0 IBV=100n
+ CJO=3.50p M=0.333 N=2.12 TT=5.76n )

*SRC=1N4448HWT;DI_1N4448HWT;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc.

Switching
.MODEL DI_1N4448HWT D ( IS=137f RS=0.168 BV=80.0 IBV=100n
+ CJO=3.56p M=0.333 N=1.11 TT=5.76n )

*SRC=1N4448W;DI_1N4448W;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc.

.MODEL DI_1N4448W D ( IS=355p RS=0.168 BV=75.0 IBV=2.50u
+ CJO=4.00p M=0.333 N=1.70 TT=5.76n )

*SRC=1N4448WS;DI_1N4448WS;Diodes;Si; 75.0V 0.500A 4.00ns Diodes Inc. Switching

Diode
.MODEL DI_1N4448WS D ( IS=24.7n RS=84.4m BV=75.0 IBV=2.50u
+ CJO=4.00p M=0.333 N=2.12 TT=5.76n )

*SRC=1SS361UDJ; 80V 0.3A 4.0ns Diodes Inc. Switching Diode

D1 1 = A 2 = C DI_1SS361UDJ
.MODEL DI_1SS361UDJ D
+ IS = 2.0n
+ N = 1.83
+ BV = 80
+ IBV = 1.00u
+ RS = 0.7
+ CJO = 0.71p
+ VJ = 5m
+ M = 9m
+ FC = 0.5
+ TT = 4n

*SRC=BAL99;DI_BAL99;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.

Switching Diode
.MODEL DI_BAL99 D ( IS=31.2n RS=0.360 BV=75.0 IBV=2.50u
+ CJO=1.72p M=0.333 N=2.35 TT=5.76n )

*SRC=BAS116;DI_BAS116;Diodes;Si; 60.0V 0.215A 3.00us Diodes Inc.

Switching Diode
.MODEL DI_BAS116 D ( IS=4.53u RS=0.383 BV=60.0 IBV=5.00n
+ CJO=1.72p M=0.333 N=4.07 TT=4.32u )

*SRC=BAS116T;DI_BAS116T;Diodes;Si; 85.0V 0.215A 3.00us Diodes Inc. Switching

Diode
.MODEL DI_BAS116T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n
+ CJO=2.00p M=0.333 N=1.61 TT=4.32u )
*SRC=MMBD4148;DI_MMBD4148;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching

.MODEL DI_MMBD4148 D ( IS=126n RS=0.140 BV=75.0 IBV=1.00u

+ CJO=2.65p M=0.333 N=2.60 TT=5.76n )

*SRC=1N4448HLP;DI_1N4448HLP;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc.

Switching Diode
.MODEL DI_1N4448HLP D ( IS=5.31n RS=0.761 BV=80.0 IBV=100n
+ CJO=3.56p M=0.333 N=1.90 TT=5.76n )

*SRC=BAS16LP;DI_BAS16LP;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching

Diode
.MODEL DI_BAS16LP D ( IS=74.3n RS=0.699 BV=75.0 IBV=1.00u
+ CJO=2.00p M=0.333 N=2.35 TT=5.76n )

*SRC=BAS16T;DI_BAS16T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc.

Switching Diode
.MODEL DI_BAS16T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u
+ CJO=1.99p M=0.333 N=1.95 TT=5.76n
***********************************************************************************
*************************************

*SRC=BAS16TW;DI_BAS16TW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.

Switching Diode
.MODEL DI_BAS16TW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )

*SRC=BAS16V;DI_BAS16V;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching

diode - one element of device
.MODEL DI_BAS16V D ( IS=412p RS=0.140 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=1.70 TT=5.76n )

*SRC=BAS16W;DI_BAS16W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.

Switching Diode
.MODEL DI_BAS16W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )

*SRC=BAS19;DI_BAS19;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc.

Switching Diode
.MODEL DI_BAS19 D ( IS=41.7n RS=0.270 BV=100 IBV=100n
+ CJO=2.98p M=0.333 N=2.35 TT=72.0n )

*SRC=BAS19W;DI_BAS19W;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc.

Switching Diode
.MODEL DI_BAS19W D ( IS=114n RS=0.172 BV=100 IBV=100n
+ CJO=2.98p M=0.333 N=2.58 TT=72.0n )

*SRC=BAS20;DI_BAS20;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc.

Switching Diode
.MODEL DI_BAS20 D ( IS=41.7n RS=0.270 BV=150 IBV=100n
+ CJO=2.98p M=0.333 N=2.35 TT=72.0n )

*SRC=BAS20DW;DI_BAS20DW;Diodes;Si; 200V 0.300A 50.0ns Diodes Inc. Single

Element of Dual BAS20DW
.MODEL DI_BAS20DW D ( IS=2.86n RS=0.141 BV=200 IBV=100n
+ CJO=2.98p M=0.333 N=1.95 TT=72.0n )

*SRC=BAS20W;DI_BAS20W;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc.

Switching Diode
.MODEL DI_BAS20W D ( IS=114n RS=0.172 BV=150 IBV=100n
+ CJO=2.98p M=0.333 N=2.58 TT=72.0n )

*SRC=BAS21;DI_BAS21;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc.

Switching Diode
.MODEL DI_BAS21 D ( IS=41.7n RS=0.270 BV=200 IBV=100n
+ CJO=2.98p M=0.333 N=2.35 TT=72.0n )

*SRC=BAS21DW;DI_BAS21DW;Diodes;Si; 250V 0.300A 50.0ns Diodes Inc. Single

Element of Dual BAS21DW
.MODEL DI_BAS21DW D ( IS=2.86n RS=0.141 BV=250 IBV=100n
+ CJO=2.98p M=0.333 N=1.95 TT=72.0n )

*SRC=BAS21T;DI_BAS21T;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching

Diode
.MODEL DI_BAS21T D ( IS=401n RS=0.105 BV=200 IBV=100n
+ CJO=5.00p M=0.333 N=2.87 TT=72.0n )

*SRC=BAS21TWQ;DI_BAS21TWQ;Diodes;Si; 250V 0.200A 50.0ns Diodes Inc. Switching

Diode
.MODEL DI_BAS21T D ( IS=830f RS=0.751 BV=250 IBV=100µ
+ CJO=0.69p M=0.0963 N=1.43 TT=72.0n )

*SRC=BAS21W;DI_BAS21W;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc.

Switching Diode
.MODEL DI_BAS21W D ( IS=114n RS=0.172 BV=200 IBV=100n
+ CJO=2.98p M=0.333 N=2.58 TT=72.0n )

*SRC=BAS521;BAS521;Diodes;Si; 300V 0.250A 50.0ns DIODES Switching Diode

.MODEL BAS521 D ( IS=74.8n RS=0.288 BV=300 IBV=150n
+ CJO=810f M=0.333 N=2.41 TT=72.0n )

*SRC=BAV116W;DI_BAV116W;Diodes;Si; 130V 0.215A 3.00us Diodes Inc. Low leakage

diode
.MODEL DI_BAV116W D ( IS=22.5p RS=0.282 BV=130 IBV=5.00n
+ CJO=2.40p M=0.333 N=1.67 TT=4.32u )

*SRC=BAV16W;BAV16W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. -

.MODEL BAV16W D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
+ CJO=2.00p M=0.333 N=2.07 TT=5.76n )

*SRC=BAV16WS;BAV16WS;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.

Switching Diode
.MODEL BAV16WS D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
+ CJO=2.00p M=0.333 N=2.07 TT=5.76n )

*SRC=BAV170;DI_BAV170;Diodes;Si; 85.0V 0.215A 3.00us Diodes, Inc. diode

.MODEL DI_BAV170 D ( IS=31.5p RS=0.195 BV=85.0 IBV=5.00n
+ CJO=2.00p M=0.333 N=1.70 TT=4.32u

*SRC=BAV170T;DI_BAV170T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching

Diode, dual, model for one element
.MODEL DI_BAV170T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n
+ CJO=2.00p M=0.333 N=1.61 TT=4.32u )

*SRC=BAV199;DI_BAV199;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. diode

.MODEL DI_BAV199 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n
+ CJO=2.00p M=0.333 N=1.78 TT=4.32u )

*SRC=BAV199DW;DI_BAV199DW;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc.

Switching - one element of BAV199DW array
.MODEL DI_BAV199DW D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n
+ CJO=2.00p M=0.333 N=1.78 TT=4.32u )

*SRC=BAV199T;DI_BAV199T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching

Diode, dual, model for one element
.MODEL DI_BAV199T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n
+ CJO=2.00p M=0.333 N=1.61 TT=4.32u )

*SRC=BAV199W;DI_BAV199W;Diodes;Si; 85.0V 0.160A 3.00us Diodes Inc. Switching

Diode
.MODEL DI_BAV199W D ( IS=22.5p RS=0.264 BV=85.0 IBV=10.0u
+ CJO=2.00 M=0.333 N=1.70 TT=4.32u )

*SRC=BAV19W;BAV19W;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc. -

.MODEL BAV19W D ( IS=1.09u RS=0.105 BV=100 IBV=100n
+ CJO=5.00p M=0.333 N=3.29 TT=72.0n )

*SRC=BAV19WS;BAV19WS;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc.

Switching Diode
.MODEL BAV19WS D ( IS=1.09u RS=0.105 BV=100 IBV=100n
+ CJO=5.00p M=0.333 N=3.29 TT=72.0n )

*SRC=BAV20W;DI_BAV20W;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. -

.MODEL DI_BAV20W D ( IS=1.09u RS=0.105 BV=150 IBV=100n
+ CJO=5.00p M=0.333 N=3.29 TT=72.0n )
*SRC=BAV20WS;DI_BAV20WS;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc.
Switching Diode
.MODEL DI_BAV20WS D ( IS=1.09u RS=0.105 BV=150 IBV=100n
+ CJO=5.00p M=0.333 N=3.29 TT=72.0n )

*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=20Oct2017
*VERSION=1

.MODEL DI_BAV21WS D(IS=15p RS=0.5 IKF=1.3m VCJO=3.3p M=0.3 VJ=0.7

+ BV=200 IBV=.03u TT=40n EG=1.1 TRS1=1u N=1.2 XTI=5)

* (c) 2017 Diodes Inc

*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Di

*SRC=BAV21WS;DI_BAV21WS;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc.

Switching Diode
.MODEL DI_BAV21WS D ( IS=1.09u RS=0.105 BV=200 IBV=100n
+ CJO=5.00p M=0.333 N=3.29 TT=72.0n )

*SRC=BAV23A;DI_BAV23A;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching

Diode
.MODEL DI_BAV23A D ( IS=237n RS=0.260 BV=200 IBV=100n
+ CJO=3.05p M=0.333 N=2.69 TT=72.0n )

*SRC=BAV23C;DI_BAV23C;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching

Diode
.MODEL DI_BAV23C D ( IS=237n RS=0.260 BV=200 IBV=100n
+ CJO=3.05p M=0.333 N=2.69 TT=72.0n )

*SRC=BAV23S;DI_BAV23S;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching

Diode
.MODEL DI_BAV23S D ( IS=237n RS=0.260 BV=200 IBV=100n
+ CJO=3.05p M=0.333 N=2.69 TT=72.0n )

*SRC=BAV70;DI_BAV70;Diodes;Si; 75.0V 0.300A 4.00ns Diodes, Inc. switching

.MODEL DI_BAV70 D ( IS=308p RS=0.329 BV=75.0 IBV=2.50u
+ CJO=2.65p M=0.333 N=1.70 TT=5.76n )

*SRC=BAV70;DI_BAV70;Diodes;Si; 75.0V 0.300A 4.00ns Diodes, Inc. switching

.MODEL DI_BAV70 D ( IS=308p RS=0.329 BV=75.0 IBV=2.50u
+ CJO=2.65p M=0.333 N=1.70 TT=5.76n )

*SRC=BAV70T;DI_BAV70T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc.

Switching Diode - one element of device
.MODEL DI_BAV70T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u
+ CJO=1.99p M=0.333 N=1.95 TT=5.76n )

*SRC=BAV70W;DI_BAV70W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.

Switching Diode
.MODEL DI_BAV70W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )

*SRC=BAV756DW;DI_BAV756DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching

- one element of device
.MODEL DI_BAV756DW D ( IS=49.2n RS=0.141 BV=75.0 IBV=2.50u
+ CJO=2.65p M=0.333 N=2.45 TT=5.76n )

*SRC=BAV99;DI_BAV99;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.

switching
.MODEL DI_BAV99 D ( IS=261p RS=0.140 BV=75.0 IBV=2.50u
+ CJO=1.19p M=0.333 N=1.70 TT=5.76n )

*SRC=BAV99BRW;DI_BAV99BRW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching

Diode, Quad, Model for one element
.MODEL DI_BAV99BRW D ( IS=412p RS=0.140 BV=75.0 IBV=2.50u
+ CJO=2.00p M=0.333 N=1.70 TT=5.76n )

*SRC=BAV99DW;DI_BAV99DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching

Diode, Quad, Model for one element
.MODEL DI_BAV99DW D ( IS=412p RS=0.140 BV=75.0 IBV=2.50u
+ CJO=2.00p M=0.333 N=1.70 TT=5.76n )

*SRC=BAV99T;DI_BAV99T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc.

Switching Diode - one element of device
.MODEL DI_BAV99T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u
+ CJO=1.99p M=0.333 N=1.95 TT=5.76n )

*SRC=BAV99W;DI_BAV99W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.

Switching Diode
.MODEL DI_BAV99W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )

*SRC=BAW101S;BAW101S;Diodes;Si; 300V 0.250A 50.0ns DIODES Switching Diode

.MODEL BAW101S D ( IS=74.8n RS=0.288 BV=300 IBV=150n
+ CJO=700f M=0.333 N=2.41 TT=72.0n )
*SRC=BAW156;DI_BAW156;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. diode
.MODEL DI_BAW156 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n
+ CJO=2.00p M=0.333 N=1.78 TT=4.32u )

*SRC=BAW156T;DI_BAW156T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching

Diode, dual, model for one element
.MODEL DI_BAW156T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n
+ CJO=2.00p M=0.333 N=1.61 TT=4.32u )

*SRC=BAW56;DI_BAW56;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode

.MODEL DI_BAW56 D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u

+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )

*SRC=BAW567DW;DI_BAW567DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching

Diode
.MODEL DI_BAW567DW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )

*SRC=BAW56DW;DI_BAW56DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching

Diode
.MODEL DI_BAW56DW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )

*SRC=BAW56T;DI_BAW56T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc.

Switching Diode - one element of device
.MODEL DI_BAW56T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u
+ CJO=1.99p M=0.333 N=1.95 TT=5.76n )

*SRC=BAW56W;DI_BAW56W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.

Switching Diode
.MODEL DI_BAW56W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )

*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=2/07/2015
*VERSION=1
*
.MODEL DLLFSD01LP3 D(IS=30p RS=.6 N=1 BV=105 IBV=0.36m IKF=1u
+ EG=1.1 ISR=.8n CJO=.5p VJ=0.4 M=0.48 TRS1=0.0001 TT=2n)

* (c) 2015 Diodes Inc

*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL

*SRC=DLPA004;DLPA004;Diodes;Si; 85.0V 0.300A 3.00us DIODES Switching Diodes

.MODEL DLPA004 D ( IS=42.4p RS=0.140 BV=85.0 IBV=2.50u
+ CJO=2.00p M=0.333 N=1.70 TT=4.32u )

*SRC=MMBD2004S;DI_MMBD2004S;Diodes;Si; 240V 0.225A 50.0ns Diodes Inc.

Switching
.MODEL DI_MMBD2004S D ( IS=1.76u RS=0.187 BV=240 IBV=100n
+ CJO=6.63p M=0.333 N=1.70 TT=72.0n )

*SRC=MMBD2004SW;DI_MMBD2004SW;Diodes;Si; 240V 0.225A 50.0ns Diodes Inc.

Switching - one element of device
.MODEL DI_MMBD2004SW D ( IS=1.76u RS=0.187 BV=240 IBV=100n
+ CJO=6.63p M=0.333 N=1.70 TT=72.0n )

*SRC=MMBD4148;DI_MMBD4148;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching

Diode
.MODEL DI_MMBD4148 D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p M=0.333 N=2.77 TT=5.76n )

*SRC=MMBD4148PLM;MMBD4148PLM;Diodes;Si; 75.0V 0.300A 4.00ns DIODES Inc

.MODEL MMBD4148PLM D ( IS=13.0u RS=0.140 BV=75.0 IBV=1.00u
+ CJO=2.00 M=0.333 N=4.97 TT=5.76n )

*SRC=MMBD4148W;DI_MMBD4148W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.

Switching Diode
.MODEL DI_MMBD4148W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )

*SRC=MMBD4448;DI_MMBD4448;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching

Diode
.MODEL DI_MMBD4448 D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
+ CJO=1.99p M=0.333 N=2.77 TT=5.76n )

*SRC=MMBD4448H;DI_MMBD4448H;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc.

Switching Diode
.MODEL DI_MMBD4448H D ( IS=300n RS=0.422 BV=80.0 IBV=100n
+ CJO=1.99p M=0.333 N=2.77 TT=5.76n )

*SRC=MMBD4448HADW;DI_MMBD4448HADW;Diodes;Si; 80.0V 0.500A 1.50ns

Diodes Inc. Switching - model for one node of four
.MODEL DI_MMBD4448HADW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )

*SRC=MMBD4448HAQW;DI_MMBD4448HAQW;Diodes;Si; 80.0V 0.500A 1.50ns

Diodes Inc. Switching - model for one node of four
.MODEL DI_MMBD4448HAQW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )

*SRC=MMBD4448HCQW;DI_MMBD4448HCQW;Diodes;Si; 80.0V 0.500A 1.50ns

Diodes Inc. Switching - model for one node of four
.MODEL DI_MMBD4448HCQW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )

*SRC=MMBD4448HSDW;DI_MMBD4448HSDW;Diodes;Si; 80.0V 0.500A 1.50ns

Diodes Inc. Switching - model for one node of four
.MODEL DI_MMBD4448HSDW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )

***********************************************************************************
***********************************************************
*SRC=MMBD4448HT;DI_MMBD4448HT;Diodes;Si; 80.0V 0.500A 1.50ns
Diodes Inc. Switching
.MODEL DI_MMBD4448HT D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )
***********************************************************************************
*********************************************************

***********************************************************************************
***********************************************************
*SRC=MMBD4448HTA;DI_MMBD4448HTA;Diodes;Si; 80.0V 0.500A 1.50ns
Diodes Inc. Switching - One node of two
.MODEL DI_MMBD4448HTA D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )
***********************************************************************************
***********************************************************

***********************************************************************************
***********************************************************
*SRC=MMBD4448HTC;DI_MMBD4448HTC;Diodes;Si; 80.0V 0.500A 1.50ns
Diodes Inc. Switching - One node of two
.MODEL DI_MMBD4448HTC D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )
***********************************************************************************
***********************************************************

***********************************************************************************
***********************************************************
*SRC=MMBD4448HTS;DI_MMBD4448HTS;Diodes;Si; 80.0V 0.500A 1.50ns
Diodes Inc. Switching - One node of two
.MODEL DI_MMBD4448HTS D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )
***********************************************************************************
***********************************************************
*SRC=MMBD4448HTW;DI_MMBD4448HTW;Diodes;Si; 80.0V 0.500A 1.50ns
Diodes Inc. Switching - model for one node of three
.MODEL DI_MMBD4448HTW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )

*SRC=MMBD4448HW;DI_MMBD4448HW;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc.

Switching Diode
.MODEL DI_MMBD4448HW D ( IS=77.0n RS=84.0m BV=80.0 IBV=100n
+ CJO=1.99p M=0.333 N=2.37 TT=5.76n )

*SRC=MMBD4448V;DI_MMBD4448V;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc.

Switching - one element of device
.MODEL DI_MMBD4448V D ( IS=4.77n RS=84.4m BV=80.0 IBV=100n
+ CJO=1.99p M=0.333 N=1.95 TT=5.76n )

*SRC=MMBD4448W;DI_MMBD4448W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.

Switching Diode
.MODEL DI_MMBD4448W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )

*SRC=MMBD7000;DI_MMBD7000;Diodes;Si; 75.0V 0.300A 4.00us Diodes Inc.

.MODEL DI_MMBD7000 D ( IS=5.08n RS=0.140 BV=75.0 IBV=2.00u
+ CJO=2.00p M=0.333 N=2.03 TT=5.76u )

*SRC=MMBD7000HC;MMBD7000HC;Diodes;Si; 100V 0.300A 4.00ns DIODES Switching

Diode
.MODEL MMBD7000HC D ( IS=412p RS=0.140 BV=100 IBV=3.00u
+ CJO=2.00p M=0.333 N=1.70 TT=5.76n )

*SRC=MMBD7000HS;MMBD7000HS;Diodes;Si; 100V 0.300A 4.00ns DIODES Switching

Diode
.MODEL MMBD7000HS D ( IS=412p RS=0.140 BV=100 IBV=3.00u
+ CJO=2.00p M=0.333 N=1.70 TT=5.76n )

*SRC=MMBD914;DI_MMBD914;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching

.MODEL DI_MMBD914 D ( IS=126n RS=0.140 BV=75.0 IBV=1.00u
+ CJO=2.65p M=0.333 N=2.60 TT=5.76n )

*SRC=SDA006;DI_SDA006;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.

Databus Transient Suppressor - Model is for one Diode Element
.MODEL DI_SDA006 D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )