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Analog Electronics I

Daniela Charris Stand


dmcharris@uninorte.edu.co

Universidad del Norte


Barranquilla
SCHEDULE
7:30 a.m. - 7:45 a.m. : Day 6 recap
7:45 a.m. - 9:45 a.m. : Intro to BJT Transistors
9:45 a.m. - 10:00 a.m. : Break
10:00 a.m. - 11:00 a.m. : BJT Transistors
11:00 a.m. - 12:30 p.m. : Workshop OpAmps

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DETAILED COURSE PLAN

Exam 2:
DIODES

Exam 3:
BJT Transistors

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EVALUATION

Tuesday,
June 28th

Tuesday,
July 5th

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DIODES

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Ideal Diode
i / v Relation

Symbol

“Reverse” “Forward”

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Ideal Diode

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The I-V curve for a realistic diode

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PN-junction Diode

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PN Diode: Temperature dependence

Figure 4.9 Temperature dependence of the


diode forward characteristic.

At a constant current, the voltage drop decreases


by approximately 2 mV for every 1°C increase in
temperature.

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The “Constant-Drop” Model

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The Shockley (Exponential) Model

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The Shockley (Exponential) Model

Muy útil cuando no se tiene IS, sino el valor de la caída para cierta corriente.

Por ejemplo: Diodo de “1mA ↔ 0.7V”


(es decir, que tiene 0.7V cuando conduce 1mA)

Con lo cual la relación corriente-voltaje del diodo queda:

VD – 0.7V = 25mV·2.3·log10 (ID / 1mA)


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Light Emitting Diodes (LEDs)

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Relative intensity
*

(arbitrary units)
Light Emitting Diodes (LEDs)

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Light Emitting Diodes (LEDs)

A K

Long lead

flat side

Short lead
short
lead

K
A
Zener Diode
Blocking, OFF, Forward
Open circuit ON

0,7

Reverse conduction

Reverse
conduction

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Exercise

The 6.8V zener diode shows a


reverse drop of Vz=6.8V at
Iz=5mA, rz=20Ω, and Izk=0.2mA.
The supply voltage is nominally at
10V with a ripple of ±1V.

Find the:

1) Output Vo with no load


2) Line regulation (ΔVo / ΔV+)
3) Load regulation (ΔVo / ΔIL)
when RL draws 1mA.

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Exercise

The 6.8V zener diode shows a


reverse drop of Vz=6.8V at
Iz=5mA, rz=20Ω, and
Izk=0.2mA. The supply voltage is
nominally at 10V with a ripple of
±1V.

Find the:

1) Output Vo with no load


2) Line regulation (ΔVo / ΔV+)
3) Load regulation (ΔVo / ΔIL)
when RL draws 1mA.

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Application of Diodes:

Rectifiers, Limiters, Clampers

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Basic AC → DC Conversion
(Simple DC Power Supply)

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Half-wave Rectifier

Output vs. Input

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Half-wave Rectifier with Capacitor

Figure 4.25 Voltage and current


waveforms in the peak rectifier with
RC≫T. The diode is assumed ideal.

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Full-wave Rectifier with
Capacitor

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Full-wave Rectifier with
Capacitor

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Basic AC → DC Conversion

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Precision Rectifier

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Limiters

Figure 4.29 Applying a sine wave to a limiter can result in clipping off its two peaks.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Limiters

Figure 4.31 Basic limiting circuits.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Clamps - Overvoltage protection

Horowitz, Art of Electronics, 3ed, Chp 1.

Input, if input is < 5.7V

5.7V, if input is larger than 5.7V


Output =

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TRANSISTORS

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Basic Concept

“Transistors are controlled valves”

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Butterfly valve Control valve

A small signal or action

controls

a large flow!

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Butterfly valve Control valve

Bi-directional,
Symmetrical
Uni-directional, Non-symmetrical

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Invention of the Transistor
John Bardeen, William Shockley and Walter Brattain,
invented the transistor. (Bell Labs, 1948)

Nobel Prize
in Physics
(1956)

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Transistor

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BJT Types

NPN

Emitter Collector

Base
PNP

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BJTs are not symmetrical devices!
- Example of NPN -

Figure 6.7 Cross-section of an npn BJT implemented in an Integrated Chip

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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BJTs are not symmetrical devices!
- Example of NPN -

https://www.allaboutcircuits.com/textbook/semiconductors/chpt-2/bipolar-junctio
n-transistors/
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BJT Types and Models

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BJT Types

NPN

Emitter Collector

PNP Base

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BJT Types

NPN

Emitter Collector

Base

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NPN Transistor

NPN

Emitter Collector

Base

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NPN Transistor

NPN

Emitter Collector

Base

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NPN Transistor

IC = β·IB, β ≈ 200
= α IE
Simple model
for
IC = 𝛼·IE,
active mode
IC ≈ I E

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NPN Transistor: the “ T model ”

Figure 6.5 Large-signal equivalent-circuit models of the npn BJT operating in the forward active mode.

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NPN Transistor: the “ T model ”

Figure 6.5 Large-signal equivalent-circuit models of the npn BJT operating in the forward active mode.

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NPN Transistor: the “ π model ”

Figure 6.5 Large-signal equivalent-circuit models of the npn BJT operating in the forward active mode.

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NPN Transistor: the “ π model ”

Figure 6.5 Large-signal equivalent-circuit models of the npn BJT operating in the forward active mode.

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NPN Transistor - Example

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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A nice transistor model:
“Transistor Man”
Art of Electronics, β

by P. Horowitz, 2015.
(Harvard University)

Note: The adjustable resistor can also be seen as a Norton


equivalent, that is, a current source in parallel with a resistor

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The Ebers-Moll model

Forward (main) active mode

Jewell Ebers, John Moll


(Bell Labs, 1954) βF ≈ 50 to 350
αF ≈ 0.99
rO

Reverse active mode

βR ≈ 0.1
αR ≈ 0.1
The Ebers-Moll model

Forward (main) active mode


“T model”

Jewell Ebers, John Moll


(Bell Labs, 1954) βF ≈ 50 to 350
αF ≈ 0.99
rO

= α IE

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BJT Types

NPN

Emitter Collector

PNP Base

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BJT Types

Emitter Collector

PNP Base

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PNP Transistor

Emitter Collector

PNP Base

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PNP Transistor

Emitter Collector

PNP Base

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PNP Transistor

Look at the relative position of E,B,C:


● Emitter above,
● Base in the middle
● Collector at bottom

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PNP Transistor

T model pi model

Figure 6.11 Two large-signal models for the pnp transistor operating in the active mode.

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I-V Relation in Transistors, Power limits
and
Early Effect

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NPN Transistor

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NPN Transistor

Hyperbola of
maximum power
dissipation capability

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NPN Transistor

Early effect (1952)

Early’s
correction

Early voltage (VA)

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NPN Transistor with Early effect “rO”

NPN

Figure 6.18 Large-signal equivalent-circuit models of an npn BJT operating in the active mode
in the common-emitter configuration with the output resistance ro included.

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PNP Transistor with Early effect “rO”

PNP

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Temperature effects on BJTs

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Temperature effects
on conduction

● For constant IC

→ vBE decreases 2mV/°C

● For constant vBE

→ IC doubles for each additional 5°C

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Dependency of hFE ( β ) on
IC and Temperature

← β typical ≈ 200

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Modes of Operation in BJTs
- Cut-off, Active, Saturation -

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BJT Operation Modes
CUT-OFF
npn pn
p

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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BJT Operation Modes
ACTIVE
np pn
n p

Microelectronic Circuits, Sixth Edition


Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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BJT Operation Modes
SATURATION
np pn
n p

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Transistor Operation Regions

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Transistor Operation
- Effect of Rc -

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Transistor Operation
- Effect of Rc -

small Rc:

LARGE Rc:

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BJT as a switch
- Only Cut-off and Saturation -
Taken from Horowitz, “Art of Electronics”, 2015

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Transistor as an ON-OFF Switch

OFF SAT
“fully ON”


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NPN Transistor as an
ON-OFF Switch

120V

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NPN Transistor as an
ON-OFF Switch

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Driving LEDs

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Using a Follower
(Buffer) Stage

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Switch with PNP for
Loads connected to ground

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BJT as an amplifier
- Only Active -

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Single-stage BJT amplifier
(Single power supply)

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Single-stage BJT amplifier
(Dual power supply)

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Multi-stage BJT amplifier

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Multi-stage MOSFET-BJT amplifier

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Analysis of Circuits with BJTs

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Analysis of circuits with transistors
The analysis is conducted in two steps, using superposition:

1. DC analysis 2. AC (small-signal) analysis


Find out for each transistor: • Compute the linearized equivalent AC model of each
• Operation mode transistor (gm , ro, etc.), based on the DC analysis.
• All voltages and currents at its terminals • Find Ri , Ro , Avo of the amplifier and
express it in the canonical form (blue box):

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BJTs - DC Analysis

Useful Formulas and Examples

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Useful Formulas

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Figure 6.14 Circuit for Example 6.2.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.14 Circuit for Example 6.2.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.21 Circuit for Example 6.3.

VE VB VC IC IB VBB

a)

b)

c)

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.22 Analysis of the circuit for Example 6.4

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.22 Analysis of the circuit for Example 6.4

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.23 Analysis of the circuit for Example 6.5.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.23 Analysis of the circuit for Example 6.5.

ACTive?

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.23 Analysis of the circuit for Example 6.5.

ACTive?

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.23 Analysis of the circuit for Example 6.5.

ACTive?

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.23 Analysis of the circuit for Example 6.5.

ACTive? SATuration?

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.23 Analysis of the circuit for Example 6.5.

ACTive? SATuration?

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Bad Designs
in BJT DC Circuits

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Figure 6.26 Example 6.8
What happens if β is halved? And if it is doubled?

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.26 Example 6.8

What happens if β is halved? And if it is doubled?

What if β = 50?

What if β = 200?

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.26 Example 6.8

What happens if β is halved? And if it is doubled?

When β changes β1
↓ β2
the VCE voltage
moves a lot !!! ≈

Circuit behaviour depends
highly
on beta !
Sensitive to
variations among
↳ Bad design! similar
components!
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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6
More bad designs

There is no
negative feedback

An unintentional
change in IC does not
affect VBE

Figure 6.59 Two obvious schemes for biasing the BJT: (a) by fixing VBE; (b) by fixing IB.
Both result in wide variations in IC and hence in VCE and therefore are considered to be “bad.”
Neither scheme is recommended.

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This is a not-so-good design

Although it does create a


negative feedback (which is
good), it still depends on
beta.

Try fixing VC = VCC/2


and see what happens when
beta changes

Figure 6.62 (a) A common-emitter transistor amplifier biased by a feedback resistor RB. (b)
Analysis of the circuit in (a).

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Good Designs
in BJT DC Circuits

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Figure 6.25 Example 6.7
What happens if β is halved? And if it is doubled?

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.25 Example 6.7
What happens if β is halved? And if it is doubled?

What if β = 50?

What if β = 200?

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.25 Example 6.7

What happens if β is halved? And if it is doubled?

When β changes β1
↓ β2
the IC stays stable


Beta has little impact on
circuit behaviour !

↳Good design! Insensitive to


variations among
similar
components!
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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More good designs
The “4-resistor H-configuration”

There is
negative feedback!

An unintentional change in IC
(due to beta or temperature)
does affect VBE,
avoiding large changes in IC

The resistor RE is the key!

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More good designs

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Thevenin equivalent of the left section

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More good designs

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Current Sources with BJTs

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Current Source: Basic Concept

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Current Source: Basic Concept

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Current-source Circuits

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Current-source Circuits

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Current Mirror

This is the preferred


biasing method in
integrated circuits
(IC chips)

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Current Mirror

This is the preferred


biasing method in
integrated circuits
(IC chips)

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A nice example that grows...

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.28 Circuits for Example 6.10.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.28 Circuits for Example 6.10.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.28 Circuits for Example 6.10.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.28 Circuits for Example 6.10.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.28 Circuits for Example 6.10.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Figure 6.28 Circuits for Example 6.10.

Any load!

Remains unchanged,
independent of the load

(Valid as long as the BJT


remains active: VC > VE + 0.3V)

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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0
Figure 6.29 Circuits for Example 6.11.

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Figure 6.29 Circuits for Example 6.11.

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Figure 6.29 Circuits for Example 6.11.

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Figure 6.29 Circuits for Example 6.11.

Any load!

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Exercise 6.30

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