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DETAILED COURSE PLAN
Exam 2:
DIODES
Exam 3:
BJT Transistors
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EVALUATION
Tuesday,
June 28th
Tuesday,
July 5th
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DIODES
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Ideal Diode
i / v Relation
Symbol
“Reverse” “Forward”
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Ideal Diode
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The I-V curve for a realistic diode
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PN-junction Diode
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PN Diode: Temperature dependence
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The “Constant-Drop” Model
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The Shockley (Exponential) Model
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The Shockley (Exponential) Model
Muy útil cuando no se tiene IS, sino el valor de la caída para cierta corriente.
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Relative intensity
*
(arbitrary units)
Light Emitting Diodes (LEDs)
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Light Emitting Diodes (LEDs)
A K
Long lead
flat side
Short lead
short
lead
K
A
Zener Diode
Blocking, OFF, Forward
Open circuit ON
0,7
Reverse conduction
Reverse
conduction
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Exercise
Find the:
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Exercise
Find the:
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Application of Diodes:
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Basic AC → DC Conversion
(Simple DC Power Supply)
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Half-wave Rectifier
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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Half-wave Rectifier with Capacitor
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Full-wave Rectifier with
Capacitor
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Full-wave Rectifier with
Capacitor
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Basic AC → DC Conversion
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Precision Rectifier
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Limiters
Figure 4.29 Applying a sine wave to a limiter can result in clipping off its two peaks.
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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Limiters
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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Clamps - Overvoltage protection
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TRANSISTORS
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Basic Concept
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Butterfly valve Control valve
controls
a large flow!
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Butterfly valve Control valve
Bi-directional,
Symmetrical
Uni-directional, Non-symmetrical
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Invention of the Transistor
John Bardeen, William Shockley and Walter Brattain,
invented the transistor. (Bell Labs, 1948)
Nobel Prize
in Physics
(1956)
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Transistor
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BJT Types
NPN
Emitter Collector
Base
PNP
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BJTs are not symmetrical devices!
- Example of NPN -
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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BJTs are not symmetrical devices!
- Example of NPN -
https://www.allaboutcircuits.com/textbook/semiconductors/chpt-2/bipolar-junctio
n-transistors/
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BJT Types and Models
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BJT Types
NPN
Emitter Collector
PNP Base
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BJT Types
NPN
Emitter Collector
Base
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NPN Transistor
NPN
Emitter Collector
Base
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NPN Transistor
NPN
Emitter Collector
Base
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NPN Transistor
IC = β·IB, β ≈ 200
= α IE
Simple model
for
IC = 𝛼·IE,
active mode
IC ≈ I E
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NPN Transistor: the “ T model ”
Figure 6.5 Large-signal equivalent-circuit models of the npn BJT operating in the forward active mode.
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NPN Transistor: the “ T model ”
Figure 6.5 Large-signal equivalent-circuit models of the npn BJT operating in the forward active mode.
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NPN Transistor: the “ π model ”
Figure 6.5 Large-signal equivalent-circuit models of the npn BJT operating in the forward active mode.
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NPN Transistor: the “ π model ”
Figure 6.5 Large-signal equivalent-circuit models of the npn BJT operating in the forward active mode.
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NPN Transistor - Example
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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A nice transistor model:
“Transistor Man”
Art of Electronics, β
by P. Horowitz, 2015.
(Harvard University)
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The Ebers-Moll model
βR ≈ 0.1
αR ≈ 0.1
The Ebers-Moll model
= α IE
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BJT Types
NPN
Emitter Collector
PNP Base
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BJT Types
Emitter Collector
PNP Base
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PNP Transistor
Emitter Collector
PNP Base
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PNP Transistor
Emitter Collector
PNP Base
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PNP Transistor
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PNP Transistor
T model pi model
Figure 6.11 Two large-signal models for the pnp transistor operating in the active mode.
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I-V Relation in Transistors, Power limits
and
Early Effect
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NPN Transistor
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NPN Transistor
Hyperbola of
maximum power
dissipation capability
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NPN Transistor
Early’s
correction
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NPN Transistor with Early effect “rO”
NPN
Figure 6.18 Large-signal equivalent-circuit models of an npn BJT operating in the active mode
in the common-emitter configuration with the output resistance ro included.
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PNP Transistor with Early effect “rO”
PNP
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Temperature effects on BJTs
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Temperature effects
on conduction
● For constant IC
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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Dependency of hFE ( β ) on
IC and Temperature
← β typical ≈ 200
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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Modes of Operation in BJTs
- Cut-off, Active, Saturation -
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BJT Operation Modes
CUT-OFF
npn pn
p
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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BJT Operation Modes
ACTIVE
np pn
n p
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BJT Operation Modes
SATURATION
np pn
n p
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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Transistor Operation Regions
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Transistor Operation
- Effect of Rc -
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Transistor Operation
- Effect of Rc -
small Rc:
LARGE Rc:
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BJT as a switch
- Only Cut-off and Saturation -
Taken from Horowitz, “Art of Electronics”, 2015
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Transistor as an ON-OFF Switch
OFF SAT
“fully ON”
≈
≈
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NPN Transistor as an
ON-OFF Switch
120V
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NPN Transistor as an
ON-OFF Switch
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Driving LEDs
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Using a Follower
(Buffer) Stage
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Switch with PNP for
Loads connected to ground
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BJT as an amplifier
- Only Active -
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Single-stage BJT amplifier
(Single power supply)
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Single-stage BJT amplifier
(Dual power supply)
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Multi-stage BJT amplifier
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Multi-stage MOSFET-BJT amplifier
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Analysis of Circuits with BJTs
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Analysis of circuits with transistors
The analysis is conducted in two steps, using superposition:
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BJTs - DC Analysis
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Useful Formulas
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Figure 6.14 Circuit for Example 6.2.
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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Figure 6.14 Circuit for Example 6.2.
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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Figure 6.21 Circuit for Example 6.3.
VE VB VC IC IB VBB
a)
b)
c)
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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Figure 6.22 Analysis of the circuit for Example 6.4
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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Figure 6.22 Analysis of the circuit for Example 6.4
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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Figure 6.23 Analysis of the circuit for Example 6.5.
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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Figure 6.23 Analysis of the circuit for Example 6.5.
ACTive?
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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Figure 6.23 Analysis of the circuit for Example 6.5.
ACTive?
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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Figure 6.23 Analysis of the circuit for Example 6.5.
ACTive?
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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Figure 6.23 Analysis of the circuit for Example 6.5.
ACTive? SATuration?
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
101
Figure 6.23 Analysis of the circuit for Example 6.5.
ACTive? SATuration?
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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2
Bad Designs
in BJT DC Circuits
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Figure 6.26 Example 6.8
What happens if β is halved? And if it is doubled?
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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4
Figure 6.26 Example 6.8
What if β = 50?
What if β = 200?
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
105
Figure 6.26 Example 6.8
When β changes β1
↓ β2
the VCE voltage
moves a lot !!! ≈
↓
Circuit behaviour depends
highly
on beta !
Sensitive to
variations among
↳ Bad design! similar
components!
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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6
More bad designs
There is no
negative feedback
↓
An unintentional
change in IC does not
affect VBE
Figure 6.59 Two obvious schemes for biasing the BJT: (a) by fixing VBE; (b) by fixing IB.
Both result in wide variations in IC and hence in VCE and therefore are considered to be “bad.”
Neither scheme is recommended.
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This is a not-so-good design
Figure 6.62 (a) A common-emitter transistor amplifier biased by a feedback resistor RB. (b)
Analysis of the circuit in (a).
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Good Designs
in BJT DC Circuits
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Figure 6.25 Example 6.7
What happens if β is halved? And if it is doubled?
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
110
Figure 6.25 Example 6.7
What happens if β is halved? And if it is doubled?
What if β = 50?
What if β = 200?
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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Figure 6.25 Example 6.7
When β changes β1
↓ β2
the IC stays stable
≈
↓
Beta has little impact on
circuit behaviour !
112
More good designs
The “4-resistor H-configuration”
There is
negative feedback!
↓
An unintentional change in IC
(due to beta or temperature)
does affect VBE,
avoiding large changes in IC
↓
The resistor RE is the key!
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More good designs
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Thevenin equivalent of the left section
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More good designs
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Current Sources with BJTs
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Current Source: Basic Concept
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Current Source: Basic Concept
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Current-source Circuits
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Current-source Circuits
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Current Mirror
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Current Mirror
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A nice example that grows...
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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Figure 6.28 Circuits for Example 6.10.
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
125
Figure 6.28 Circuits for Example 6.10.
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
126
Figure 6.28 Circuits for Example 6.10.
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
127
Figure 6.28 Circuits for Example 6.10.
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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Figure 6.28 Circuits for Example 6.10.
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
129
Figure 6.28 Circuits for Example 6.10.
Any load!
Remains unchanged,
independent of the load
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.
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Figure 6.29 Circuits for Example 6.11.
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Figure 6.29 Circuits for Example 6.11.
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Figure 6.29 Circuits for Example 6.11.
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Figure 6.29 Circuits for Example 6.11.
Any load!
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Exercise 6.30
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