ELECTRONICS LECTURE

Electronics Devices and Circuits 2: - The mobility of electrons is faster than

BJT holes.
- That is why NPN transistor conduct
 Introduction to BJT
faster than PNP
 Transistor Construction
 Transistor Operation
Construction
 DC Biasing
Point Contact Transistor
- On December 23, 1947, point contact
transistor was invented by John
Bardeen, Walter Brattain, and
William Shockley of Bell Laboratories.

Width :C > E> B

Transistor
- “Transfer Resistor”
- John Robinson Pierce
BJT is a CCCS device
Bipolar Junction Transistor
- A type of transistor that uses both
electrons and hole as charge carriers.
- N type: majority carrier are electrons
- P type: majority carrier are holes
- This means that the width of the base is
smaller than the width of the emitter.
While the width of the emitter is smaller
than the width of the collector.
Width : E> C> B
- Emitter is heavily doped
- Collector is high doped
- Base is lightly doped
- B width is 1:150 of entire BJT
- Current Controlled, Current Source
- This means that in order for the BJT to
function all it needed is current and with
that it can control the current flowing on
a circuit.

Types of BJTs

Operating Regions of BJT

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- It will occur when VBE is forward bias

Saturation Region
- It will occur when VBE and VCB are in
forward bias
- It means that VBE is greater than or equal
to 0.7 which is the threshold voltage.
- IB and IC are both greater than 0
- VCE = VCE, sat = 0.2 V
and VCB is in reverse bias
- It means that VBE is greater than or equal
to 0.7 which is the threshold voltage.
- IB and IC are both greater than 0
- VCC ≥ VCE ≥ VCE,sat

Cut – off Region

- It will occur when VBE and VCB are in Transistor Current
reverse bias
- It means that VBE is less than 0.7 which I E =I B + I C
is the threshold voltage.
- IB and IC are both 0
- VCE = VCC I C =β I B

I C =α I E

Collector Current when collector base is

open

I C =βI B + ( 1+ β ) I CBO

I CEO= (1+ β ) I CBO

I C =α I E + I CBO

Active Region Common Configuration of BJT

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Common Base
(Voltage Amplifier)
- High voltage gain
- Low current gain
- Very low input impedance
- High output impedance
(Power Amplifier)
- High power gain
- Moderate current gain
- Moderate voltage gain
- Low – moderate input impedance
- Moderate – high output impedance
- Has 180 degrees phase shift

Common Collector
(Current Amplifier)
- High current gain
- Low voltage gain
- High input impedance
- Low output impedance

Characteristic Curve

Common Emitter
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Collector Feedback Bias

Note:
Q – Point
- Quiescent Point
- It where the value of voltage and
current when the transistor has no
input.

Bias
- Application of DC voltages to
establish a fixed level of current and
voltage.

Fixed Bias

Voltage Divider Bias

Emitter Feedback Bias

Amplifier Classes
- Classically Controlled
- Conduction Angle Amplifiers
 Class A
 Class B
 Class AB
 Class C
- Switching Amplifier Classes
 Class D
 Class E
 Class F
 Class S

Class A
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- Conducts through a full 360 degrees Class C

of the output waveform
- Equivalent to a current source
- Operates in the linear Region
- 25% to 50% efficiency
- Greatest efficiency but poorest
linearity
- Heavily biased so that the output
current is zero for more than one
half of signal
- Efficiency can be as high as 80%
- Conducting is less than 180 degree

Class B
- Push – Pull Amplifier
- Conduction occurs over half the
cycle only (180 degree)
Amplifier Classes
- Efficiency is about 78.5% max
theoretically.
- Suffers from Crossover Distortion

Class AB
- Combination of Class A and Class
B
- Eliminates the crossover distortion
of class B
- Q is just above the cut – off point
- Conducting is around 180 to 360 deg
- Efficiency is 50% to 60%