Efficiency Improvement Analysis of A SiC MOSFET-based PMSM Drive System With Variable Switching Frequency

Efficiency Improvement Analysis of a SiC MOSFET-based PMSM Drive System with YUNUS Suleman
Variable Switching Frequency
Efficiency Improvement Analysis of a SiC MOSFET-based PMSM Drive

System with Variable Switching Frequency
Suleman Yunus, Wenlong Ming, Carlos E. Ugalde-Loo

CARDIFF UNIVERSITY
Cardiff, United Kingdom
E-Mail: yunuss4@cardiff.ac.uk
Keywords
«Efficiency», «Electric vehicle», «Permanent magnet motor», «Silicon carbide (SiC)», «Three-phase
motor drive»
Abstract
The widespread deployment of electric vehicles (EVs) requires high efficiency of traction inverters to
drive longer distances in one charge. The widely used silicon insulated-gate bipolar transistor (Si IGBT)
for EV motor drives is mature and practical; however, it can result in large inverter losses, especially at
high switching frequencies. Whereby, silicon carbide metal-oxide-semiconductor field-effect transistors
(SiC MOSFETs) can reduce both conduction and switching losses compared to Si IGBT. Increasing the
switching frequency of the traction inverters is proven to be effective in lowering the motor iron losses;
however, this will concurrently increase the inverter switching losses. This paper aims to show the
effectiveness of operating SiC MOSFETs in a permanent magnet synchronous motor drive using
variable switching frequency pulse-width modulation. Optimisation of the switching frequency is
therefore demonstrated to maximise the motor drive system efficiency. Results show that the efficiency
of the whole system, i.e., motor and motor drive, can be improved through optimally selecting the
switching frequency of the motor drive at different driving operating points.
Introduction
In response to an increase in carbon emissions and pollution, the electric vehicle (EV) market has rapidly
expanded over the latest years. Lower maintenance costs, less noise pollution and ease of use are the
main advantages that drive the development further. Many countries have embraced their environmental
regulations in support of the future of EVs [1]. However, the main barriers towards wide adoption
amongst consumers are limits in the vehicle's range before requiring another charge and the initial
investment costs. The more efficient an EV motor control system becomes, the less energy it will
consume, thereby increasing the range and reducing costs.
Wide bandgap (WBG) semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are
fundamental in achieving higher power density and maximising the efficiency of a motor control system
[2], [3]. These devices offer attractive advantages such as low on-resistances due to higher breakdown
fields and high electron mobility. The lower capacitances and more significant saturation velocity allow
for faster switching transients. This results in WBG devices offering lower switching losses than a
comparable Si-based semiconductor device [4], [5].
Although most EV manufacturers use silicon (Si) insulated-gate bipolar transistors (IGBTs) in their
inverters, their lower breakdown fields and saturated electron velocity limit the switching speed. In
addition, the thermal conductivity of Si constricts the performance at higher temperatures, therefore
restricting the power density and efficiency [6]. Consequently, the use of WBG semiconductors in EV
applications is becoming increasingly popular due to their lower conduction and switching losses and
their ability to operate at higher switching frequencies and higher temperature [7]. By increasing the
EPE'21 ECCE Europe ISBN: 978-9-0758-1537-5 – IEEE: CFP21850-ART P.1

Authorized licensedAssigned jointly
use limited to the European
to: UNIVERSITY Power Electronics
TEKNOLOGY and Drives
PETRONAS. Association
Downloaded & the Institute
on September of Electrical
25,2023 and Electronics
at 03:42:45 Engineers
UTC from IEEE (IEEE)
Xplore. Restrictions apply.
switching frequency, the harmonic content in the current waveform is reduced. This results in lower
motor losses by reducing the current ripple [8].
Studies on efficiency of a SiC metal-oxide-semiconductor field-effect transistor (SiC MOSFET) motor

drive have been carried out with different methods to improve the efficiency of the motor drive. In [9]
and [10], a detailed efficiency study was carried out with a GaN field-effect transistor (GaN FET) motor
drive. However, in these papers, the motor losses are not considered from the impact of increasing
switching frequency. Additionally, only GaN FET was considered and not the SiC MOSFET. To bridge
this research gap, the main objective of this paper is to study the effect of increased switching frequency
for maximising the system efficiency of SiC MOSFET-based motor drive. Increasing the average system
efficiency by 1-2% and reducing the total losses by 5-10% can significantly reduce costs in charging
and increase the life cycle of an EV battery. Therefore, this paper provides guidelines for optimising
efficiency of SiC MOSFET-based motor drive system for use in EV applications.
Loss Models for a SiC MOSFET-based Motor Drive

This section presents a detailed study of the loss models used to represent a SiC MOSFET-based motor
drive. The models are derived from the inverter and PMSM, as shown in Fig. 1. Operating at high torque
and high speeds requires a high drain current, which surpasses the requirements of the SiC MOSFET;
therefore, 4 SiC MOSFETs are connected in parallel at each arm of the inverter.
Fig. 1: Overview of motor drive system implemented.
Inverter Losses
The most significant losses in SiC MOSFET-based inverters are the conduction and switching losses.
The conduction losses , can be calculated as the sum of the average losses in each of the MOSFET
devices:
1 1
, 24 (1)
4
where is the forward on voltage, is the slope resistance, and is source current. The switching
losses , can be calculated as a function of the MOSFET device properties as [11]:
24
, (2)
where and are the turn-on and turn-off energies, is the turn-off energy of the diode, is
the switching frequency and is the dc voltage. The inverter efficiency is calculated as the sum
of the inverter losses over the dc input power, given as
! , , "
(3)
where is the sum of the inverter conduction and switching losses and is the dc input power.

PMSM Motor Losses

The predominant PMSM motor losses include copper losses ( # , ) and iron losses ( $ , ). Other losses
such as the harmonic eddy current losses are assumed negligible. The copper losses are dependent on
the magnitude of the three-phase current (4):
, 3 ,
# , 3 % & &', (4)
2
where % is the fundamental rms phase current, is the stator resistance, and & and &' are the dq-
phase currents. Conversely, the iron losses are dependent on the magnitude of the peak stator core flux
density (5) [12]:
3
$ , )* ,
-, -,' *./ -, -,' 0 (5)
2 +#
where is the PMSM frequency and - ' are the dq-flux linkages. The constants *+# and *./ in (5) are
derived from experimental tests [13]. In this case, the iron losses can also be obtained by subtracting the
copper losses from the total motor power loss as shown below in equation (6):
2 × 3 4% × 5
%,% 1
60 × 1000
%,8 %, 8 %,% 1 %,% 1
$ , %,8 # , (6)
where %,% 1 is the motor mechanical output power, %, 8 is the motor electrical input, %,8 is the
total motor power loss, 3 4% is the PMSM rotational speed and 5 is the PMSM torque. The motor
efficiency is calculated using the motor mechanical output power %,% 1 and dc input :
%,% 1
% 9 (7)
Total System Losses

The total losses and total system efficiency for the motor drive system can be considered the sum of the
inverter losses and motor losses previously calculated with (1), (2), (4) and (5):
: ,9 9;8 , , # , $ , (8)
The total system efficiency is given as:
%,% 1
: (9)

System Implementation and System Response

This section presents an overview of the SiC MOSFET motor drive system. This has been co-simulated
using PLECS and MATLAB Simulink to model a practical EV motor drive. The operating regions were
chosen to match that of a city car with a maximum speed of 3500 rpm. The efficiency of these vehicles
is a growing concern for maximising the distance travelled without needed another charge and therefore
considered in this section.
Fig. 2: Circuit schematic of three-phase SiC MOSFET-based inverter.
The inverter simulated implements the SCT3030AR SiC MOSFET from ROHM Semiconductor [14].
Operation of the PMSM at high speeds and torques produces a large drain current of 110 A. To overcome
this, 4 SiC MOSFET devices are connected in parallel at each arm, as shown in Fig 2. For this inverter,
a gate resistance of 3 Ω was selected. A higher gate resistance would result in more considerable losses,
and a lower gate resistance would increase the electromagnetic interference (EMI). Therefore, 3 Ω was
designed as a trade-off between switching loss and EMI. The IGBT and MOSFET parameters used in
this study are listed in Table I, where includes the diode reverse recovery.
Table I. Parameters of Semiconductor Switches
Classification Model =>> (V) =/# !@" (V) (Ω) , !mJ"
SiC MOSFET (25 °C) SCT3060AR 650 39 2.7 0.00060 0.0079, 0.0018
Si IGBT (25 °C) IHW30N65R5 650 30 1.7 13 0.85, 0.24
A traction motor for an EV should be designed with high power density and high efficiency. A 6-pole
PMSM was adopted for its higher power factor, higher efficiencies, and higher power densities over
traditional induction motors. Table II shows the PMSM motor parameters used in the simulation of the
motor drive.
Table II. PMSM Motor Parameters
Motor Parameter Value Units
Stator resistance 0.030 Ω
Stator inductance 0.005 + j0.001 H
Flux induced by magnetic Phi 0.06 Wb
Inertia 0.1 Nms,
Number of pole pairs 3

A control strategy based on conventional vector current control is implemented. The block diagram of
the control system is shown in Fig. 3. The control scheme is designed with torque and measured motor
rotational speed as inputs, aiming for high response and high efficiency. Applying a set torque allows
the system to be stressed under different operating conditions. In practice, an EV would operate at
different speeds and torques; therefore, these operational characteristics are essential. For the system
simulation, the vector current control operates within MATLAB Simulink, and the gate signals are sent
to PLECS. Within PLECS, the conduction and switching losses are calculated, and periodic averages
are simulated.
Fig. 3: Block diagram of motor drive control system.

Comparison of Inverter Switching Losses and Conduction Losses
Fig. 4 shows the total conduction and switching losses of the 24-switch inverter measured at different
operating switching frequencies. This study was carried out at 40 Nm, 60 Nm and 80 Nm to identify the
effect of losses at varying operating points. To provide a comparison between WBG switches, Fig. 4(a)
shows the inverter losses for a Si IGBT, and Fig. 4(b) shows the inverter losses for a SiC MOSFET.
6000 6000
Conduction Loss Conduction Loss
150 Switching Loss
Switching Loss
5000 5000
120
Inverter Power Loss [W]
Inverter Power Loss [W]
4000 80 4000
150
50
20
3000 120 3000
80
150 2000
2000 50
20
120
80
50 150
1000 20 1000 150 120
120 80
150 50
120 50 80 20
80 20
2050
0 0
40Nm 60Nm 80Nm 40Nm 60Nm 80Nm
Torque [Nm] Torque [Nm]
Fig. 4(a): Comparison of a 24 switch Si IGBT- Fig. 4(b): Comparison of 24 switch SiC
based inverter losses at different switching MOSFET-based inverter losses at different
frequencies (20 kHz, 50 kHz, 80 kHz, 120 kHz and switching frequencies (20 kHz, 50 kHz, 80 kHz,
150 kHz). 120 kHz and 150 kHz).
As shown from Fig. 4, the SiC MOSFET-based inverter substantially reduces the switching and
conduction losses compared to a Si IGBT-based inverter. The SiC MOSFET-based inverter is seen to

reduce the conduction losses at 40 Nm, 60 Nm and 80 Nm by 85%. This is due to the lower on-state
resistance in a SiC MOSFET, shown in Table I. The switching losses of the SiC MOSFET are also
reduced, more notably at higher switching frequencies. At lower switching frequencies, 20 kHz and 50
kHz, the switching losses are about the same value. Since SiC MOSFET devices have a much lower
drift-layer resistance than a comparable Si-IGBT device, conductivity modulation is not required to
achieve the low on-state resistance [15]. As a result, the switching losses are much lower than a Si IGBT-
based inverter.
Comparison of Motor Copper Losses and Iron Losses
Fig. 5 shows the PMSM motor copper and iron losses at increasing switching frequencies. Fig. 5(a)
shows the motor copper and iron losses at 40 Nm, 60 Nm and 80 Nm, and Fig. 5(b) shows the impact
of motor iron losses at faster switching frequencies and torque at a constant speed.
1600 90 800
Copper Loss 20
Iron Loss
50 85
421
1400
8
700
71
272
80 80
1200 5
49 600
6
34
Motor Power Loss [W]
120 75 6
20
150 60
1000
Power Loss (W)

70 1 500
Torque (Nm)
50 42 2
80 27 19
8
800 5
65 49 6
120 400
34
150
60
600 1
20 42 300
50
2
55
27
86
80
8
19
400 6
120
150 34
50 200
200
45 2
27 100
8
19 86
0 40
40Nm 60Nm 80Nm 20 40 60 80 100 120 140
Torque [Nm] Switching Frequency (kHz)
Fig. 5(a): Comparison of PMSM motor copper Fig. 5(b): PMSM iron losses as a function of
and iron losses at different switching frequencies switching frequency.
(20 kHz, 50 kHz, 80 kHz, 120 kHz and 150 kHz).
Fig. 5(a) shows that a faster switching frequency reduces the iron losses, whilst the copper losses remain
constant. It is also seen that from 40 Nm to 60 Nm, the copper losses increase by 80%, whilst the iron
losses increase by about 90% at low switching frequency and 400% at high switching frequency. A
similar trend is noticed from 60 Nm and 80 Nm. As the operating points become more demanding, the
magnitude of the three-phase current increases; consequently, the copper losses are also increased, as
calculated from (4).
It can be seen from Fig. 5(b) that the switching frequency significantly impacts the iron losses. The iron
losses reduce the faster the switching frequency is. When the PMSM is fed by a low switching frequency
inverter, the three-phase current can be drastically distorted from the sinusoidal waveform. This
distorted current can lead to flux density distortions in the PMSM [12]. From (5), this will result in an
increase in iron losses.

System Efficiency Comparison at Increasing Switching Frequency

The motor drive simulated is compared at increasing switching frequencies to identify the impact of the
inverter, motor, and system efficiency. The switching frequencies are set as 20 kHz, 50 kHz and 100
kHz. Utilising m-files coded in MATLAB, the torque constant values and switching frequencies can be
modified for each simulation run. This can allow the efficiency values to be stored in memory for
different simulations. For this paper, the rotational speed was varied between 1000 to 3500 rpm, with
the torque increasing from 40 Nm to 100 Nm.
100 100 100 100
100 100
90
95
92
93
90
93
90 90
95
97
80 95 80 95 80 95
Efficiency (%)
Efficiency (%)
Torque (Nm)
Efficiency (%)
Torque (Nm)
Torque (Nm)
96
97
88
91
98
70 70 70
90
92
93
93
98
60 90
95
60 90 60 90
50 50 50
96
88
91
97
94
96
98
90
93
95
93
92
40 85 40 85 40 85
1000 1500 2000 2500 3000 3500 1000 1500 2000 2500 3000 3500 1000 1500 2000 2500 3000 3500
Speed (rpm) Speed (rpm) Speed (rpm)
(a) Inverter efficiency at 20 kHz (b) Motor efficiency at 20 kHz (c) System efficiency at 20 kHz
100 100 100 100 100 100
95 93
90 90 90
97
80 95 80 95 80 95
Efficiency (%)
Efficiency (%)
Efficiency (%)
Torque (Nm)
Torque (Nm)
Torque (Nm)
94
95
96
88
91
90
93
92
70 70 70
93
95
96
60 90 60 90 60 90
97
50 50 50
95
96
88
93
91
90
92
97
93
94
96
95
40 85 40 85 40 85
1000 1500 2000 2500 3000 3500 1000 1500 2000 2500 3000 3500 1000 1500 2000 2500 3000 3500
(d) Inverter efficiency at 50 kHz (e) Motor efficiency at 50 kHz (f) System efficiency at 50 kHz
100 100 100 100 100 100
95
90 90 90
96
80 95 80 95 80 95
Efficiency (%)
Efficiency (%)
Efficiency (%)
Torque (Nm)
Torque (Nm)
Torque (Nm)
95
94
96
88
91
90
92
93
70
93
70 70
95
96
97
60 90 60 90 60 90
50 50 50
92
94
95
96
88
90
93
92
93
94
97
95
96
40 85 40 85 40 85
1000 1500 2000 2500 3000 3500 1000 1500 2000 2500 3000 3500 1000 1500 2000 2500 3000 3500
(g) Inverter efficiency at 100 kHz (h) Motor efficiency at 100 kHz (i) System efficiency at 100 kHz
Fig. 6: Efficiency simulations of a SiC MOSFET-based PMSM motor drive system at 20 kHz, 50 kHz and
100 kHz.
As shown in Fig. 6(a) and Fig. 6(d), by increasing the switching frequency from 20 kHz to 50 kHz, the
inverter efficiency decreases; however, it is also seen from Fig. 6(b) and Fig. 6(e) that the motor
efficiency increases. This ultimately results in a higher system efficiency. A similar trend is noticed as
the switching frequency is increased up to 100 kHz. It is observed that the faster the switching frequency
of the inverter is, the total harmonic distortion of the three-phase current reduces and optimises the motor
efficiency. However, as seen from Fig. 4 overall, increasing the switching frequency notably increases
the switching losses. The advantage of the SiC MOSFET is the lower on-resistance than a comparable
Si IGBT; however, a trade-off between inverter efficiency and motor efficiency is still required to obtain
the optimum system efficiency.

Efficiency Improvement by Varying Inverter Switching Frequency

To maximise the system efficiency at different operating points of a PMSM motor drive, a variable
switching frequency method is implemented. Fig. 7 shows the switching frequency map, highlighting
the highest efficiency regions by varying the switching frequency at different operating points. The map
is obtained by comparing the system efficiency graphs from Fig. 6. The switching frequencies to provide
the highest efficiency can then be identified and linearly interpolated between each point.
90 100 100 100

80
80 80
50 90
30
80
50 80
Switching Frequency [kHz]

80 80
70
70 100 100
Torque [Nm]
10
0
80 60
80
60 100 100
50
80 40
50 80
50
30
50
40 20
1000 1500 2000 2500 3000 3500
Speed [rpm]
Fig. 7: Switching frequency map to optimise the system efficiency of the PMSM motor drive.
From Fig. 7, it is seen that for this system, at low torque, the highest system efficiency can be achieved
by operating around 50 kHz, whereas, at 60-70 Nm, the switching frequency should be 100 kHz.
Similarly, at high torque, the switching frequency should be set to about 80 kHz to provide the optimum
trade-off between inverter efficiency and motor efficiency. Following this contour map, a vector control
system can be implemented, providing the highest system efficiency, considering the inverter and motor
efficiencies. It is validated through simulations that the variable switching frequency method can
improve the total system efficiency by 1-2%.
Conclusion
The effectiveness of a SiC MOSFET-based inverter for a motor drive system for EV applications has
been presented in this paper. A comparison between WBG devices and the widely used Si IGBTs is
discussed. It is shown that WBG devices offer lower switching losses than a comparable Si
semiconductor device. WBG devices are also able to operate at higher switching frequencies, allowing
for higher system efficiencies. Through simulations, it is explored that faster switching frequencies will
reduce the inverter efficiencies; however, the motor efficiency and system efficiency will increase. Since
a SiC MOSFET-based inverter can operate at higher switching frequencies with fewer losses when
compared to a Si IGBT-based inverter, the system efficiency can be optimised by the switching
frequency. Through variable switching frequency and under the same conditions of this paper, the
efficiency of the whole system can be increased by up to 2%, potentially reducing charging costs and
improving an EV battery life cycle.

References
[1] “Government takes historic step towards net-zero with end of sale of new petrol and diesel cards by 2030,”
2020. [Online]. Available: https://www.gov.uk/government/news/government-takes-historic-step-towards-
net-zero-with-end-of-sale-of-new-petrol-and-diesel-cars-by-2030.
[2] E. A. Jones, F. F. Wang and D. Costinett, "Review of Commercial GaN Power Devices and GaN-Based
Converter Design Challenges," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol.
4, no. 3, pp. 707-719, Sept. 2016.
[3] X. She, A. Q. Huang, Ó. Lucía and B. Ozpineci, "Review of Silicon Carbide Power Devices and Their
Applications," in IEEE Transactions on Industrial Electronics, vol. 64, no. 10, pp. 8193-8205, Oct. 2017.
[4] H. Jain, S. Rajawat and P. Agrawal, "Comparision of wide band gap semiconductors for power electronics
applications," 2008 International Conference on Recent Advances in Microwave Theory and Applications,
2008, pp. 878-881.
[5] T. P. Chow, "Wide bandgap semiconductor power devices for energy efficient systems," 2015 IEEE 3rd
Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2015, pp. 402-405.
[6] J. Millán, P. Godignon, X. Perpiñà, A. Pérez-Tomás and J. Rebollo, "A Survey of Wide Bandgap Power
Semiconductor Devices," in IEEE Transactions on Power Electronics, vol. 29, no. 5, pp. 2155-2163, May
2014.
[7] A. K. Morya et al., "Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges," in IEEE
Transactions on Transportation Electrification, vol. 5, no. 1, pp. 3-20, March 2019.
[8] M. Merdzan, J. J. H. Paulides, A. Borisavljevic and E. A. Lomonova, "The influence of the inverter switching
frequency on rotor losses in high-speed permanent magnet machines: An experimental study," 2015 IEEE
International Electric Machines & Drives Conference (IEMDC), 2015, pp. 1628-1633.
[9] Y. Nakayama et al., "Efficiency Improvement of Motor Drive System by using a GaN Three Phase
Inverter," 2019 IEEE International Conference on Industrial Technology (ICIT), Melbourne, Australia, 2019,
pp. 1599-1604.
[10] K. Ohta et al., "Variable Switching Frequency Control for Efficiency Improvement of Motor Drive System
by Using GaN Three Phase Inverter," 2020 IEEE International Conference on Industrial Technology (ICIT),
Buenos Aires, Argentina, 2020, pp. 119-123.
[11] A. Balamurali, G. Feng, C. Lai, J. Tjong and N. C. Kar, "Maximum Efficiency Control of PMSM Drives
Considering System Losses Using Gradient Descent Algorithm Based on DC Power Measurement," in IEEE
Transactions on Energy Conversion, vol. 33, no. 4, pp. 2240-2249, Dec. 2018.
[12] S. Xue et al., "Iron Loss Model for Electrical Machine Fed by Low Switching Frequency Inverter," in IEEE
Transactions on Magnetics, vol. 53, no. 11, pp. 1-4, Nov. 2017.
[13] F. Fernandez-Bernal, A. Garcia-Cerrada and R. Faure, "Determination of parameters in interior permanent-
magnet synchronous motors with iron losses without torque measurement," in IEEE Transactions on Industry
Applications, vol. 37, no. 5, pp. 1265-1272, Sept.-Oct. 2001.
[14] “SCT3030AR Rohm Semiconductor Data Sheet,” 2019. [Online]. Available:
https://www.rohm.com/products/sic-power-devices/sic-mosfet/sct3030ar-product.
[15] “SiC Power Devices and Modules,” 2013. [Online]. Available:
https://www.rohm.com/documents/11303/2861707/sic_app-note.pdf.


Efficiency Improvement Analysis of A SiC MOSFET-based PMSM Drive System With Variable Switching Frequency

Uploaded by

Document Information

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

Efficiency Improvement Analysis of A SiC MOSFET-based PMSM Drive System With Variable Switching Frequency

Uploaded by

Copyright:

Available Formats

Efficiency Improvement Analysis of a SiC MOSFET-based PMSM Drive System with YUNUS Suleman

Variable Switching Frequency

Efficiency Improvement Analysis of a SiC MOSFET-based PMSM Drive

Suleman Yunus, Wenlong Ming, Carlos E. Ugalde-Loo

EPE'21 ECCE Europe ISBN: 978-9-0758-1537-5 – IEEE: CFP21850-ART P.1

Studies on efficiency of a SiC metal-oxide-semiconductor field-effect transistor (SiC MOSFET) motor

Loss Models for a SiC MOSFET-based Motor Drive

Fig. 1: Overview of motor drive system implemented.

EPE'21 ECCE Europe ISBN: 978-9-0758-1537-5 – IEEE: CFP21850-ART P.2

PMSM Motor Losses

%,8 %, 8 %,% 1 %,% 1

Total System Losses

The total system efficiency is given as:

EPE'21 ECCE Europe ISBN: 978-9-0758-1537-5 – IEEE: CFP21850-ART P.3

System Implementation and System Response

Fig. 2: Circuit schematic of three-phase SiC MOSFET-based inverter.

EPE'21 ECCE Europe ISBN: 978-9-0758-1537-5 – IEEE: CFP21850-ART P.4

Fig. 3: Block diagram of motor drive control system.

EPE'21 ECCE Europe ISBN: 978-9-0758-1537-5 – IEEE: CFP21850-ART P.5

Power Loss (W)

EPE'21 ECCE Europe ISBN: 978-9-0758-1537-5 – IEEE: CFP21850-ART P.6

System Efficiency Comparison at Increasing Switching Frequency

EPE'21 ECCE Europe ISBN: 978-9-0758-1537-5 – IEEE: CFP21850-ART P.7

Efficiency Improvement by Varying Inverter Switching Frequency

90 100 100 100

Switching Frequency [kHz]

EPE'21 ECCE Europe ISBN: 978-9-0758-1537-5 – IEEE: CFP21850-ART P.8

EPE'21 ECCE Europe ISBN: 978-9-0758-1537-5 – IEEE: CFP21850-ART P.9

You might also like