Professional Documents
Culture Documents
With the advances of the electronics industry, the continuing trend of miniatur- Context & Scale
ization and integration imposes challenges of efficient heat removal in nanoe- Two-dimensional (2D) materials,
lectronic devices. Two-dimensional (2D) materials, especially graphene and especially graphene and
hexagonal boron nitride (h-BN), are widely accepted as ideal candidates for hexagonal boron nitride (h-BN),
thermal management materials due to their high intrinsic thermal conductivity have attracted great interest in
and good mechanical flexibility. In this review, we introduce phonon dynamics thermal management as they
of solid materials and thermal measurement methods at nanoscale, and high- exhibit superior thermal
light the unique thermal properties of 2D materials in relation to sample thick- properties, in addition to other
ness, domain size, and interfaces. In addition, we discuss recent achievements of unique advantages of being
thermal management applications in which 2D materials act as heat spreader atomically thin and mechanically
and thermal interface materials based on their controlled growth and self- flexible. Therefore, 2D materials
assembly. Finally, critical consideration on the challenges and opportunities in are poised to potentially solve the
thermal management applications of 2D materials is presented. increasingly severe heat
dissipation problems in electronic
Introduction and optoelectronic devices.
Over the past century, modern electronics has undergone significant miniaturization Developing 2D material-based
and high-power densification, and the trend is still continuing.1,2 Moore’s law, which thermal interface materials with
predicts that the number of transistors per square area will double in roughly every desired thermal properties has
18 months, continues to lead the pace of the semiconductor industry since it was put been extensively investigated. In
forward in the 1970s.3 Significantly, this prediction on the development of elec- this review, we focus on recent
tronics shows a direct relationship with heat dissipation. In industrial use, thermal progress of integration of 2D
design power (TDP) is defined as the maximum amount of heat that a chip can materials into three-dimensional
generate in its working condition, which serves as an important factor for chip design (3D) structures and their use as
and thermal management in industry. It is easily recognized from some representa- thermal interface materials as well
tive Intel microprocessors as a function of time (Figure 1) that the trend of increasing as heat spreaders.
density of transistors and TDP is still continuing, leading to an unavoidable increase
in temperature and significant reduction of device reliability.4 We first present the mechanism of
thermal transport in 2D materials
With rapid increase in power density in modern electronics, efficient heat removal and advanced thermal
has become an emerging demand for electronic devices including communication, characterization methods. The
information, and energy storage technologies because the higher a microproces- utilization of 2D materials with
sor’s cooling rate, the faster it can operate and therefore operate with better perfor- various composite forms for
mance. Ultra-fast high-frequency devices produce a large amount of heat in small building phonon conduits is then
localized areas, and thus generate hotspots where the working power can be over reviewed. It is noteworthy that 3D
ten times higher than its average value.5 As a result, deteriorated performance or structures constructed by purely
even failure may occur on devices with low thermal conductivity, despite the rela- 2D materials possess the highest
tively low operating temperatures of the majority of other regions.6 thermal conductivity among all 3D
composites. Finally, we
Thermal management is the effort to control the working temperature of devices summarize the challenges and
such as integrated circuits (IC) by means of temperature monitoring and device cool- opportunities, including
ing. As a broad definition, a thermal management setup is composed of a temper- interfacial engineering, 3D
ature controller, liquid/air cooling system, heat sink, and thermal interface materials
Figure 1. Timeline of Thermal Design Power and Number of Transistors for Intel Microprocessors
The data points show an overall exponential trend as a function of time consistent with Moore’s law.
Data were collected from Intel. 4
The rise of two-dimensional (2D) materials provides exciting opportunities for ther-
mal management.7,8 From inception in 2004, 2D materials such as graphene, hexag-
onal boron nitride (h-BN), transition metal dichalcogenides (TMDCs), and black
phosphorous (BP) have attracted extensive interest from researchers and engineers
because of their high surface area, good mechanical strength, and tunable physical
properties.9–12 As a result, 2D materials have shown great potential in a wide range
of applications including thermal management, field-effect transistors, photodetec-
tors, photovoltaic modules, energy storage devices, and catalysis.13–19 In addition,
these atomically thin materials show good mechanical properties and flatness due to
their 2D nature, making them promising candidates for next-generation flexible
electronic devices.20,21 Impressively, it has been demonstrated that graphene shows 1Shenzhen Environmental Science and New
Energy Technology Engineering Laboratory,
ultrahigh thermal conductivity of 4,800–5,300 W m1 K1,22,23 exceeding its Shenzhen Geim Graphene Center (SGC),
bulk counterpart graphite, which already has a high thermal conductivity of Tsinghua-Berkeley Shenzhen Institute (TBSI),
2,000 W m1 K1.24 These results suggest the potential of graphene as a better Tsinghua University, Shenzhen 518055, China
2Department of Materials Science and
choice for heat spreaders than commonly used metals.25,26 Different from graphene,
Engineering, University of California, Berkeley,
which has high thermal conductivity as well as electrical conductivity, h-BN is electri- CA 94720, USA
cally insulating yet highly thermally conductive. These features make h-BN a superb 3Shenyang National Laboratory for Materials
candidate as a thermal management material for electronic devices on many prac- Science, Institute of Metal Research, Chinese
Academy of Sciences, Shenyang 110016, China
tical occasions where electrical insulation is required.27 From the physics point of
4Shenzhen Key Laboratory for Graphene-based
view, 2D materials exhibit distinctive thermal properties from their bulk counter- Materials and Engineering Laboratory for
parts, such as ballistic28,29 and hydrodynamic30 transport of phonons at 100 K. In Functionalized Carbon Materials, Shenzhen Geim
Graphene Center (SGC), Graduate School at
addition, the intriguing phonon behavior provides an opportunity to update knowl-
Shenzhen, Tsinghua University, Shenzhen 518055,
edge of heat transfer at the nanoscale. In summary, 2D materials with novel phonon China
properties, high thermal conductivity, and good mechanical flexibility are promising 5Laboratory of Advanced Materials, School of
for both fundamental studies of heat transfer and thermal management applications Materials Science and Engineering, Tsinghua
University, Beijing 100084, China
in next-generation electronics.31–33 6These authors contributed equally
*Correspondence:
This review aims to provide an overview of fundamental phonon transport and hmcheng@sz.tsinghua.edu.cn (H.-M.C.),
thermal management applications of 2D materials. Basic phonon dynamics are pre- fykang@sz.tsinghua.edu.cn (F.K.)
sented first, followed by thermal measurement methods and thermal transport of 2D https://doi.org/10.1016/j.joule.2018.01.006
1
k = Cn yl ; (Equation 2)
3
where Cn is the specific heat of the lattice, y is the phonon group velocity, and l is the
mean free path of phonons in the material. Related to this equation is the concept of
phonon dispersion, which shows the relationship between lattice vibration fre-
quency u and wavevector k, u(k), and phonon group velocity y is given by
vuk
y= : (Equation 3)
vk
The phonon dispersion relationship is vital for thermal transport studies as it bridges
statistical atomic behavior to macroscopic heat flux. However, phonons can be
scattered through anharmonicity of the lattice, including normal process (N) and
Umklapp process (U) in crystal lattices,36 and the latter one causes resistance to ther-
mal transport. Notably, interfacial thermal property is particularly important for
nanoscale thermal transport because nanoscale materials have high surface-to-vol-
ume ratios and are consequently more sensitive to interface than bulk materials. This
makes interfacial thermal conductance, Gk, critical for thermal management in
nanoscale materials. Thermal resistance at the interface is unavoidable even with
atomically sharp and clean interfaces. Accordingly, the concept of Kapitza resistance
is introduced as Rk, which measures thermal resistance caused by lattice mismatch
across the interface.37 Computational studies for solutions of Fourier ’s law for 2D
materials were first carried out based on the BTE.35 It is especially useful for large
system simulations, despite the fact that the phonon dispersion of a specific material
is still needed and thus limits its applications. At the same time, molecular dynamics
(MD) is introduced to study the atomistic picture of thermal transport.38 As MD is
compatible with anharmonic interaction simulations, it is widely used to investigate
fundamental thermal properties of nanomaterials.
Optothermal Raman Method. The optothermal Raman technique was first used
in 2008 by Balandin et al. to measure the in-plane thermal conductivity of a sus-
pended single-layer graphene,22 revealing a thermal conductivity as high as
4,800–5,300 W m1 K1. In a typical measurement, a laser is used as a heat source
and focused on the middle of a sample, causing a radial temperature gradient in
the basal plane of 2D materials (Figure 2A). Because the peak shifts in Raman spec-
trum show linear relationship with the temperature change,43 one can connect the
temperature rise of the sample surface with the laser heating power, and the sample
thermal conductivity can be calculated. It should be noted that the laser power
absorbance of graphene with wavelength dependence is determined in different
ways. In Balandin’s work, a 488-nm laser was chosen for a clear Raman signal as
This suspended-pad method has also been used to measure the thermal conductiv-
ity of 2D materials including graphene, h-BN, MoS2, BP, and Bi2Te3.51–56 This
method shows straightforward and reliable calibration on temperature with high
resolution (0.05 K),57 which makes it a powerful technique for in-plane thermal
conductivity measurements. However, the accuracy of this technique can be signif-
icantly affected by polymer residues on 2D materials,58,59 and the tip-assisted
sample transfer would be technically challenging and time consuming. The device
fabrication process is also complicated.55
with the change of optical reflectivity. The phase and amplitude of the probe are
measured as a function of delay time between the pump and probe, and output
by a lock-in amplifier (Figure 2C). A mathematical fitting is then conducted to extract
thermal parameters. The resolution of heat penetration at the nanoscale makes
TDTR a powerful method for interface thermal transport measurement,62 among
which the most intensively studied sample is graphene/metal interface.63–68 TDTR
has also been reported to be able to measure cross-plane thermal conductivity of
2D materials such as BP69 and WSe2.70
Other Methods. Besides the methods discussed above, there are some other com-
mercial instruments based on micrometer-scale resolution that could be modified
for thermal measurements at the nanoscale. For example, a scanning thermal micro-
scope (SThM) is a specially designed scanning probe microscope that gives a tem-
perature mapping result based on a sharp scanning tip. It was first used for thermal
conductivity measurement of CNTs in 2000.71 Null point scanning thermal micro-
scopy (Np SThM) was modified by measuring the local heat transported from the
sample to the tip only, minimizing the impact of heat transfer in the air gap between
the sample and tip.72 With this method, a residue-free suspended graphene was
measured and showed a thermal conductivity of 2,400 W m1 K1 at room temper-
ature.73 For bulk materials, one of the most widely used commercial devices is the
laser flash apparatus. In this setup, the sample is cut to a specific size and heated
by a pulse laser, and the thermal diffusivity can then be measured by manipulation
of the thickness of the sample and thermal diffusion time (Figure 2D). It is a conve-
nient way for thermal measurements provided that the sample size meets the
requirements,28,74 and is especially useful for characterization of thermal manage-
ment materials for real application. The advantages and disadvantages of different
thermal conductivity measurement methods are summarized in Figure 3.
Effect of Domain Size. Intensive experimental and theoretical efforts have also
been directed toward the effect of domain size on thermal properties. In the
Klemens model, in-plane thermal conductivity of graphite shows a logarithmic diver-
gence with the grain size.75 Based on an ideal case where heat transfer is only
inhibited by Umklapp scattering, simulation study indicates that the thermal conduc-
tivity of graphene can exceed the bulk limit provided that the flake domain size is up
to a few micrometers.89 This trend has been confirmed by a suspended-pad mea-
surement, showing that the thermal conductivity keeps logarithmically increasing
even if the sample length reaches 10 mm, much longer than the mean free path.53
For larger domain sizes (30 mm), a finite value was discovered by theoretical
study.90 In real cases, phonons would be scattered by defects besides the Umklapp
scattering.91 Nevertheless, the theoretical studies point to ways of improving the
thermal conductivity by growing large crystals of 2D materials.92
can be achieved by stacking for more C-B matching to reduce interfacial space,103 or
specifically introducing 5j7 carbon defects to relax the lattice mismatch.104 However,
most work on this topic is based on computational methods and corresponding
experimental investigations are urgently required.
Other Factors. In addition to the above factors that have significant influence on
the thermal conductivity of 2D materials, other factors, including isotopic modifica-
tion,105 ion intercalating,106 tensile strain,107 defect engineering,108 and functional-
ization,109 can also be used to engineer the thermal conductivity of 2D materials.
These are shown to exist mainly on graphene, but in principle they should work
for other 2D materials as well.
Building phonon conduits is another important aspect for enhancement of the filler-
polymer interface, which can be realized by the formation of hybrid structures of low-
dimensional materials including graphene, h-BN, and CNTs. It was discussed in a
previous section that graphenes with larger domain sizes show higher thermal con-
ductivity than those with smaller ones. 2D materials with large domain sizes are
therefore desirable, because they form a filler structure that reaches the thermal
percolation threshold with less interface area.150 However, solely applying fillers
with large sizes may fail to form a complete heat pathway in the whole polymer ma-
trix because of limited overlapping areas between the nanosheets of 2D materials.
Therefore, the concept of building hybrid structures has been suggested, with
microsize and nanosize fillers functioning as brick and cement for phonon conduits,
respectively. Hybrid fillers with graphene and CNTs have attracted extensive atten-
tion since its first report in 2008.118 A high loading of graphene and CNTs with syn-
ergic effect was later reported with a loading of 20 vol% each, showing a thermal
conductivity of 6.18 W m1 K1, which is higher than that of 50 vol% individual
Graphene and h-BN Thin Films for Heat Spreaders. A heat spreader is used for
dissipating heat from a hotspot to its surrounding area. In IC package, it is usually
a thin copper or artificial graphite foil with high in-plane thermal conductivity. It
has been demonstrated that a mechanically exfoliated few-layer graphene lowers
the temperature of a GaN transistor by 20 C, showing great potential as a heat
spreader as well as compatibility with current chip processing.177 Freestanding
reduced graphene oxide (rGO) paper can be fabricated by direct evaporation,178
vacuum filtration,179 and electrospray deposition180 of GO dispersion, as well as sur-
factant-stabilized graphene nanoplates (GNP) solution.181 They usually show high
thermal conductivity over 1,000 W m1 K1, outperforming Cu and Al foils in terms
of heat spreading capability. Thermal conductivity of the graphene film is effectively
dependent on the sheet size of GO182,183 and its reduction process.184,185 Kumar
et al. fabricated an rGO film by GO sheets with lateral size over 30 mm, showing
improved tensile strength (77 MPa) and thermal conductivity (1,390 W m1 K1)
compared with smaller sizes.186 In a recent work, Peng et al. created microfolds by
mechanical pressing of microgasbags between graphene sheets, and these folds
provide a graphene paper with mechanical flexibility even after high-temperature
annealing (3,000 C). The final graphene paper shows an ultrahigh thermal conduc-
tivity of 1,940 W m1K1,74 exceeding the best performance of commercially used
graphitized polyimide (PI) films.187
ACKNOWLEDGMENTS
The authors acknowledge the financial support from National Natural Science
Foundation of China (nos. 51521091 and 51722206), Shenzhen Municipal Develop-
ment and Reform Commission, Shenzhen Environmental Science and New
Energy Technology Engineering Laboratory grant number: SDRC [2016]172, the
Youth 1000-Talent Program of China, the Shenzhen Basic Research Project (no.
JCYJ20170307140956657), and the Development and Reform Commission of
Shenzhen Municipality for the development of the ‘‘Low-Dimensional Materials
and Devices’’ Discipline.
AUTHOR CONTRIBUTIONS
H.-M.C. and F.K. proposed the topic of this review. H.S. and J.L. investigated the
literature and wrote the manuscript. J.W. and B.L. revised the manuscript.
6. Pop, E. (2010). Energy dissipation and 21. Schwierz, F. (2010). Graphene transistors. Nat. 37. Swartz, E.T., and Pohl, R.O. (1989). Thermal
transport in nanoscale devices. Nano Res. 3, Nanotechnol. 5, 487–496. boundary resistance. Rev. Mod. Phys. 61, 605.
147–169.
22. Balandin, A.A., Ghosh, S., Bao, W., Calizo, I., 38. Hu, J., Ruan, X., and Chen, Y.P. (2009).
7. Balandin, A.A. (2011). Thermal properties of Teweldebrhan, D., Miao, F., and Lau, C.N. Thermal conductivity and thermal rectification
graphene and nanostructured carbon (2008). Superior thermal conductivity of in graphene nanoribbons: a molecular
materials. Nat. Mater. 10, 569–581. single-layer graphene. Nano Lett. 8, 902–907. dynamics study. Nano Lett. 9, 2730–2735.
8. Nika, D.L., and Balandin, A.A. (2012). Two- 23. Nika, D.L., Pokatilov, E.P., and Balandin, A.A. 39. Kim, P., Shi, L., Majumdar, A., and McEuen, P.
dimensional phonon transport in graphene. (2011). Theoretical description of thermal (2001). Thermal transport measurements of
J. Phys. Condens. Matter 24, 233203. transport in graphene: the issues of phonon individual multiwalled nanotubes. Phys. Rev.
cut-off frequencies and polarization branches. Lett. 87, 215502.
9. Novoselov, K.S., Geim, A.K., Morozov, S.V., Phys. Status Solidi B 248, 2609–2614.
Jiang, D., Zhang, Y., Dubonos, S.V., 40. Cahill, D.G. (1990). Thermal conductivity
Grigorieva, I.V., and Firsov, A.A. (2004). 24. Touloukian, Y.S., ed. (1970). In measurement from 30 to 750 K: the 3u
Electric field effect in atomically thin carbon Thermophysical properties of matter: the method. Rev. Sci. Instrum. 61, 802–808.
films. Science 306, 666–669. TPRC data series; a comprehensive
compilation of data, Volume 6 (Ifi/Plenum), 41. Paddock, C.A., and Eesley, G.L. (1986).
10. Golberg, D., Bando, Y., Huang, Y., Terao, T., p. 1. Transient thermoreflectance from thin metal
Mitome, M., Tang, C., and Zhi, C. (2010). films. J. Appl. Phys. 60, 285–290.
25. Malekpour, H., Chang, K.H., Chen, J.C., Lu,
Boron nitride nanotubes and nanosheets.
C.Y., Nika, D., Novoselov, K., and Balandin, A.
ACS Nano 4, 2979–2993. 42. Nika, D.L., and Balandin, A.A. (2017). Phonons
(2014). Thermal conductivity of graphene and thermal transport in graphene and
11. Radisavljevic, B., Radenovic, A., Brivio, J., laminate. Nano Lett. 14, 5155–5161. graphene-based materials. Rep. Prog. Phys.
Giacometti, V., and Kis, A. (2011). Single-layer 26. Goli, P., Ning, H., Li, X., Lu, C.Y., Novoselov, 80, 036502.
MoS2 transistors. Nat. Nanotechnol. 6, K.S., and Balandin, A.A. (2014). Thermal
147–150. 43. Calizo, I., Balandin, A., Bao, W., Miao, F., and
properties of graphene-copper-graphene
Lau, C. (2007). Temperature dependence of
heterogeneous films. Nano Lett. 14, 1497–
12. Liu, B., Köpf, M., Abbas, A.N., Wang, X., Guo, the Raman spectra of graphene and
Q., Jia, Y., Xia, F., Weihrich, R., Bachhuber, F., 1503. graphene multilayers. Nano Lett. 7, 2645–
and Pielnhofer, F. (2015). Black arsenic- 27. Zhi, C., Bando, Y., Tang, C., Kuwahara, H., and 2649.
phosphorus: layered anisotropic infrared Golberg, D. (2009). Large-scale fabrication of
semiconductors with highly tunable 44. Cai, W., Moore, A.L., Zhu, Y., Li, X., Chen, S.,
boron nitride nanosheets and their utilization
compositions and properties. Adv. Mater. 27, in polymeric composites with improved
Shi, L., and Ruoff, R.S. (2010). Thermal
4423–4429. transport in suspended and supported
thermal and mechanical properties. Adv.
monolayer graphene grown by chemical
Mater. 21, 2889–2893.
13. Lin, Y.M., Dimitrakopoulos, C., Jenkins, K.A., vapor deposition. Nano Lett. 10, 1645–1651.
Farmer, D.B., Chiu, H.Y., Grill, A., and Avouris, 28. Shaikh, S., Li, L., Lafdi, K., and Huie, J. (2007).
P. (2010). 100-GHz transistors from wafer- Thermal conductivity of an aligned carbon 45. Faugeras, C., Faugeras, B., Orlita, M.,
scale epitaxial graphene. Science 327, 662. nanotube array. Carbon 45, 2608–2613. Potemski, M., Nair, R.R., and Geim, A. (2010).
Thermal conductivity of graphene in corbino
14. Mueller, T., Xia, F., and Avouris, P. (2010). 29. Hu, Y., Zeng, L., Minnich, A.J., Dresselhaus, membrane geometry. ACS Nano 4, 1889–
Graphene photodetectors for high-speed M.S., and Chen, G. (2015). Spectral mapping 1892.
optical communications. Nat. Photon. 4, of thermal conductivity through nanoscale
297–301. ballistic transport. Nat. Nanotechnol. 10, 46. Zhou, H., Zhu, J., Liu, Z., Yan, Z., Fan, X., Lin, J.,
701–706. Wang, G., Yan, Q., Yu, T., Ajayan, P.M., and
15. Pospischil, A., Furchi, M.M., and Mueller, T. Tour, J.M. (2014). High thermal conductivity of
(2014). Solar-energy conversion and light 30. Lee, S., Broido, D., Esfarjani, K., and Chen, G. suspended few-layer hexagonal boron nitride
emission in an atomic monolayer pn diode. (2015). Hydrodynamic phonon transport in sheets. Nano Res. 7, 1232–1240.
Nat. Nanotechnol. 9, 257–261. suspended graphene. Nat. Commun. 6, 6290.
47. Sahoo, S., Gaur, A.P., Ahmadi, M., Guinel,
16. Yang, X., Cheng, C., Wang, Y., Qiu, L., and Li, 31. Wang, Y., Xu, N., Li, D., and Zhu, J. (2017). M.J.F., and Katiyar, R.S. (2013). Temperature-
D. (2013). Liquid-mediated dense integration Thermal properties of two dimensional dependent Raman studies and thermal
of graphene materials for compact capacitive layered materials. Adv. Funct. Mater. 27, conductivity of few-layer MoS2. J. Phys. Chem.
energy storage. Science 341, 534–537. https://doi.org/10.1002/adfm.201604134. C 117, 9042–9047.
60. Schmidt, A.J., Chen, X., and Chen, G. (2008). 74. Peng, L., Xu, Z., Liu, Z., Guo, Y., Li, P., and Gao, 90. Nika, D.L., Askerov, A.S., and Balandin, A.A.
Pulse accumulation, radial heat conduction, C. (2017). Ultrahigh thermal conductive yet (2012). Anomalous size dependence of the
and anisotropic thermal conductivity in superflexible graphene films. Adv. Mater. 29, thermal conductivity of graphene ribbons.
pump-probe transient thermoreflectance. https://doi.org/10.1002/adma.201700589. Nano Lett. 12, 3238–3244.
Rev. Sci. Instrum. 79, 114902.
75. Klemens, P. (2000). Theory of the a-plane 91. Fthenakis, Z.G., Zhu, Z., and Tománek, D.
61. Cahill, D.G. (2004). Analysis of heat flow in thermal conductivity of graphite. J. Wide (2014). Effect of structural defects on the
layered structures for time-domain Bandgap Mater. 7, 332–339. thermal conductivity of graphene: from point
183. Zheng, Q., Ip, W.H., Lin, X., Yousefi, N., 193. Meng, Y., Zhao, Y., Hu, C., Cheng, H., Hu, Y., 205. Li, Z., Wu, P., Wang, C., Fan, X., Zhang, W.,
Yeung, K.K., Li, Z., and Kim, J.K. (2011). Zhang, Z., Shi, G., and Qu, L. (2013). All- Zhai, X., Zeng, C., Li, Z., Yang, J., and Hou, J.
Transparent conductive films consisting of graphene core-sheath microfibers for all- (2011). Low-temperature growth of graphene
ultralarge graphene sheets produced by solid-state, stretchable fibriform by chemical vapor deposition using solid and
Langmuir-Blodgett assembly. ACS Nano 5, supercapacitors and wearable electronic liquid carbon sources. ACS Nano 5, 3385–
6039–6051. textiles. Adv. Mater. 25, 2326–2331. 3390.