Arab Academy for Science & Technology & Maritime Transport

College of Engineering & technology

Electronics & Communication Engineering Department
Course: MEMS Course Code: EC 530

Instructor: Prof. Hazem H. Ali GTA: Eng. Nabil Hamed

MCQ set#4:Si Microfabrication (Continue)

Choose the most proper answer:

1. ......... is considered as the most expensive micromechanical 2. Lithography is used for:
process: a) Forming resist layers on the substrate <
a) Etching b) Cutting tool
b) Lift-off technique c) Forming electric bonds
c) Lithography < d) None of the above
d) Masking

3. Types of lithography: 4. Types of photoresist:

a) Photolithography a) Positive
b) X-ray lithography b) Negative
c) E-beam lithography c) a & b <
d) All of the above < d) None of the above

5. In X-ray lithography, the X-ray absorber is usually: 6. ................ is projecting electron beam directing on
a) Silver photoresist of the wafer :
b) Gold < a) E-beam lithography <
c) Aluminum b) Light emitting
d) None of the above c) Electron beam gun
d) Radar beam

7. The electron gun is used in lithography because it is........ : 8……………..Used for removing desired areas of the
a) Inexpensive photo resist from the substrate:
b) Accurate < a) LIGA
c) Doesn’t require high voltage b) Lithography
d) Not e of the above c) Etching <
d) Not e of the above

9. Types of etching are...........: 10. The most widely used anisotropic etchant is/are.........:
a) Wet isotropic a) KOH
b) Wet anisotropic b) KCl
c) Dry c) NaOH
d) All of the above < d) a&c <

11. Etching is always anisotropic if the material is……….: 12. ..........is an Etch stop technique.
a) Crystalline < a) Wet isotropic etching.
b) Polycrystalline b) Wet anisotropic etching.
c) Amorphous c) Electrochemical etching. <
d) None of the above d) Physical sputter etching.

13…………..is the etching through chemical or physical 14. Methods of dry etching are:
interaction between ions: a) Physical sputter etching
a) Wet isotropic etching b) Chemical plasma etching
b) Wet anisotropic etching c) Combined chemical/physical etching
c) Dry etching < d) All of the above <
d) None of the above

15. ……………… is used for metals that are hard to etch:

a) Lift-off technique <
b) Combined physical/chemical etching
c) Physical sputter etching
d) Chemical plasma etching