Experiment No 11:

Title: Introduction to MOSFET.

Objective:
To understand the MOSFET as a switching as well as a voltage controlled device. The switching
device has its own characteristics and there are different kinds of it.

Theory:
.The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a
semiconductor device that is widely used for switching purposes and for the amplification of
electronic signals in electronic devices. A MOSFET is either a core or integrated circuit where it
is designed and fabricated in a single chip because the device is available in very small
sizes. The introduction of the MOSFET device has brought a change in the domain of switching
in electronics.
A MOSFET is a four-terminal device having source(S), gate (G), drain (D) and body (B)
terminals. In general, The body of the MOSFET is in connection with the source terminal thus
forming a three-terminal device such as a field-effect transistor. MOSFET is generally
considered as a transistor and employed in both the analog and digital circuits. This is the basic
introduction to MOSFET.

Fig: Construction of Mosfet

The charge carriers enter the channel at source and exit via the drain. The width of the channel is
controlled by the voltage on an electrode is called gate which is located between source and
drain. It is insulated from the channel near an extremely thin layer of metal oxide. A metal-
insulator-semiconductor field-effect transistor or MISFET is a term almost synonymous with
MOSFET. Another synonym is IGFET for the insulated-gate field-effect transistor.

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MOSFET Operation

The working of a MOSFET depends upon the MOS capacitor. The MOS capacitor is the main
part of MOSFET. The semiconductor surface at the below oxide layer which is located between
source and drain terminals. It can be inverted from p-type to n-type by applying positive or
negative gate voltages.

MOSFETs also have three terminals, namely Drain (D), Source (S) and Gate (G) and also one
more (optional) terminal called substrate or Body (B). MOSFETs are also available in both
types, N-channel (NMOS) and P-channel (PMOS). MOSFETs are basically classified in to two
forms. They are:

 Depletion Type
 Enhancement Type

Construction wise we can categories the device into four types.

 P – Channel Enhancement MOSFET

 N – Channel Enhancement MOSFET
 P – Channel Depletion MOSFET
 N – Channel Depletion MOSFET

Depletion Type

The depletion type MOSFET transistor is equivalent to a “normally closed” switch. The
depletion type of transistors requires gate – source voltage (VGS) to switch OFF the device

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The depletion mode MOSFETs are generally known as „Switched ON‟ devices, because these
transistors are generally closed when there is no bias voltage at the gate terminal. If the gate
voltage increases in positive, then the channel width increases in depletion mode.

As a result the drain current ID through the channel increases. If the applied gate voltage more
negative, then the channel width is very less and MOSFET may enter into the cutoff region

Enhancement Type

The Enhancement mode MOSFET is equivalent to “Normally Open” switch and these types of
transistors require a gate-source voltage to switch ON the device. The symbols of both N-
channel and P-channel enhancement mode MOSFETs are shown below.

The Enhancement mode MOSFET is commonly used type of transistor. This type of MOSFET is
equivalent to normally-open switch because it does not conduct when the gate voltage is zero. If
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the positive voltage (+VGS) is applied to the N-channel gate terminal, then the channel conducts
and the drain current flows through the channel.

If this bias voltage increases to more positive then channel width and drain current through the
channel increases to some more. But if the bias voltage is zero or negative (-VGS) then the
transistor may switch OFF and the channel is in non-conductive state.

Report Writing:

1. Why MOSFET is a voltage controlled device?

2. Why is MOSFET preferred over BJT in switching applications?
3. What would happen when VGS for depletion type MOSFET is zero?
4. What would happen when positive VGS is applied increasingly to the gate terminal?
5. Write down the differences between JFET and MOSFET. Which one better and why?
6. Why substrate used in MOSFET?

Discussion:

a) What has been taught in this experiment?

b) Discuss essentiality of MOSFET in the field of electronics.

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