IDDQ testing involves measuring the quiescent or idle current (IDDQ) of an integrated circuit. Small defects that cause current leaks can be detected this way. The document discusses the motivation for IDDQ testing and how it can find faults like bridging faults and floating gate defects. It also covers limitations like increased leakage currents in newer technologies making the IDDQ threshold harder to determine. Methods to improve IDDQ testing like delta IDDQ testing and building current sensors directly into chips are presented.
IDDQ testing involves measuring the quiescent or idle current (IDDQ) of an integrated circuit. Small defects that cause current leaks can be detected this way. The document discusses the motivation for IDDQ testing and how it can find faults like bridging faults and floating gate defects. It also covers limitations like increased leakage currents in newer technologies making the IDDQ threshold harder to determine. Methods to improve IDDQ testing like delta IDDQ testing and building current sensors directly into chips are presented.
IDDQ testing involves measuring the quiescent or idle current (IDDQ) of an integrated circuit. Small defects that cause current leaks can be detected this way. The document discusses the motivation for IDDQ testing and how it can find faults like bridging faults and floating gate defects. It also covers limitations like increased leakage currents in newer technologies making the IDDQ threshold harder to determine. Methods to improve IDDQ testing like delta IDDQ testing and building current sensors directly into chips are presented.
1 Motivation Early 1990’s – Fabrication Line had 50 to 1000 defects per million (dpm) chips IBM wants to get 3.4 defects per million (dpm) chips Conventional way to reduce defects: Increasing test fault coverage Increasing burn-in coverage Increase Electro-Static Damage awareness New way to reduce defects: IDDQ Testing – also useful for Failure Effect Analysis
Tuesday, November 7, 2023
2 Basic Principle of IDDQ Testing
Measure IDDQ current through Vss bus
Tuesday, November 7, 2023 3 Faults Detected by IDDQ Tests
Tuesday, November 7, 2023
4 Stuck-at Faults Detected by IDDQ Tests Bridging faults with stuck-at fault behavior Levi – Bridging of a logic node to VDD or VSS – few of these Transistor gate oxide short Floating MOSFET gate defects – do not fully turn off transistor
Tuesday, November 7, 2023
5 NAND Open Circuit Defect – Floating gate
Tuesday, November 7, 2023
6 Floating Gate Defects Small break in logic gate inputs (100 – 200 Angstroms) lets wires couple by electron tunneling Delay fault and IDDQ fault Large open results in stuck-at fault – not detectable by IDDQ test If Vtn < Vfn < VDD - | Vtp | then detectable by IDDQ test
Tuesday, November 7, 2023
7 Multiple IDDQ Fault Example
Tuesday, November 7, 2023
8 Capacitive Coupling of Floating Gates Cpb – capacitance from poly to bulk Cmp – overlapped metal wire to poly Floating gate voltage depends on capacitances and node voltages If nFET and pFET get enough gate voltage to turn them on, then IDDQ test detects this defect
Tuesday, November 7, 2023
9 Leakage Faults Gate oxide shorts cause leaks between gate & source or gate & drain Mao and Gulati leakage fault model: Leakage path flags: fGS, fGD, fSD, fBS, fBD, fBG G = gate, S = source, D = drain, B = bulk
Assume that short does not change logic values
Tuesday, November 7, 2023
10 Weak Faults nFET passes logic 1 as 5 V – Vtn pFET passes logic 0 as 0 V + |Vtp| Weak fault – one device in C-switch does not turn on Causes logic value degradation in C-switch
Tuesday, November 7, 2023
11 Transistor Stuck-Closed Faults Due to gate oxide short (GOS) k = distance of short from drain Rs = short resistance IDDQ2 current results show 3 or 4 orders of magnitude elevation
Tuesday, November 7, 2023
12 Gate Oxide Short
Tuesday, November 7, 2023
13 Leakage Fault Table k = # component I/O pins n = # component transistors m = 2k (# of input / output combinations) m x n matrix M represents the table Each logic state – 1 matrix row Entry mi j = octal leakage fault information Flags fBG fBD fBS fSD fGD fGS Sub-entry mi j = 1 if leakage fault detected
Tuesday, November 7, 2023
14 Example Leakage Fault Table
Flags fBG fBD fBS fSD fGD fGS
Tuesday, November 7, 2023
15 Instrumentation Problems Need to measure < 1 mA current at clock > 10 kHz Off-chip IDDQ measurements degraded Pulse width of CMOS IC transient current Impedance loading of tester probe Current leakages in tester High noise of tester load board Much slower rate of current measurement than voltage measurement
Tuesday, November 7, 2023
16 Limitations of IDDQ Testing Sub-micron technologies have increased leakage currents Transistor sub-threshold conduction Harder to find IDDQ threshold separating good & bad chips IDDQ tests work: When average defect-induced current greater than average good IC current Small variation in IDDQ over test sequence & between chips
Tuesday, November 7, 2023
17 Delta IDDQ Testing -- Thibeault Use derivative of IDDQ at test vector as current signature D IDDQ (i) = IDDQ (i) – IDDQ (i – 1) Leads to a narrower histogram Eliminates variation between chips and between wafers P – probability of false test decisions
Tuesday, November 7, 2023
18 IDDQ Built-in Current Testing – Maly and Nigh Build current sensor into ground bus of device-under-test Voltage drop device & comparator Compares virtual ground VGND with Vref at end of each clock – VGND > Vref only in bad circuits Activates circuit breaker when bad device found
Tuesday, November 7, 2023
19 Conceptual BIC Sensor
Tuesday, November 7, 2023
20 CMOS BIC Sensor
Tuesday, November 7, 2023
21 Setting Optimal # Transistors in Block Must partition chip into functional units, each with its own BIC Too large a unit – combined leakage currents erroneously trigger BIC sensor Idefmin – smallest defect current Inoisemax – maximum noise-related peak supply current Minimum area sensor design at Idefmin and IDDQ intersection Nmax – maximum # transistors in 1 BIC unit