C

·
 Chapter 3

Electrical Actuation System

 "Electric Actuators"is
↳ mechanical device used convert
a to
electricity
into Kinetic

either linear motion.

energy in a
single or
rotary
* All actuators are transduces (because they convert one
form ofenergy
to another). Some sensors are transduces (like mechanical actuators
not all.
Mechanical Switches

to the
↳ used as sensors to give inputs
system

Relays

as
feball
id e

pewheding

·
Relays are inductance
can have back emf shortit.
so
->

diode is led to
 Solenoid

devicethatwedestro magnetisethe
solenoidisacontas
 semiconductoss.-I

->
Materials having properties bow conductory & insulators
-> have covalent bond

Rutherford's Atomic Model. I

E
⑳ No.
total ofe in an atom=2n2
Whesen:shell No.
* shell is
atinnermost lowest of highest
energy
at outermost-
Most
=>

useful Semiconductor Materials are those having: ->

- TivalentAtoms:
↳ have 3 valence e-(outermost)
↳ ex:B, Al, Gallium, Indium

Tetsavalent Atoms:

->
-> have 4 Valence
Si;Germanium
ex:
e
3↳-
Forms tetrahedral

Cystall ->
lattice (cubic
3D.

& forms covalent bond

Pentavalent Atoms:
A
-

have Valence
5 e used as semicond
But si is
mostly
->

-> ex: P, As, Antimony because of availability

in abundance.
than Germanium

types of
semiconductors
↓ to
Intrinsic Extrinsic
#, #
·Pure semiconductors without impurities
~with & doping.
any impurities or doping ·
ex: ntyped p-type.
~
Doping:
↳ not made
semiconductors from one
single atoms
↳ produced by addition trivalent& pentavalent
ofhighly purified
↳ Effectdensity
atoms called
doping
of hole & e

-
Doped material called
p-type
I deficitof et semicondultos

Doped material called

n-type
-
<excess et) semiconductor

when etc.)
external energy (heat, electricity, light applied
↳ to
n-type semiconductors
face wander
material,
through
&ve terminal of positive
applied potential sepulse fseee &
-

the
terminal attracts.

p-n junction o ->

↳
interference or boundary b/w p-typed a
type semiconductors
joined together
p-type n-type
fee
ooooo eee er
- er take si sheet ofp-type
oooooo eeee
D
=
now add some pentavalent
000000
impurity it &
to make it
-go o o o o o
eeee
eee e formed
when n-type, so itforms

Ip-n junction -
side
Holes one
another
ptyped
* n-type.
31 ptype I n-type
a

junction is formed

=>

forming
After pon junction:2 process
occus
further: ->

-
Diffusion
-

Drift.
 p-type ↳
type
1 ↑
8000 ⑦ ⑰
cee
⑦ ⑰
00000
⑦ ⑰ eec
⑦ ⑰
ooooo
⑦ ⑰ eee
000 b
⑦ ⑰ - ee

undoped/Pure
↑
o
(Difusion)
a
->
Regionists
(depletion
Holes
get diffused into
n-type flee e and -?
suction layer
/In which free e os
face
I no
leave behind - we
change & e
of holes are present)
ntype getdiffered into
p-type holes
and leave behind the
charge. forms
This a
diffusion
layer of
called
"depletion layes"(Region of
the 1-re charge on sides
both

I
diffusion
this is continued till &
on p-side start
repelling free e
ofn-type 4 * on n-side start
repelling holes ofp type. They formed
a potential bassies (V).

↳ diffusion of
This holes & et give sise to curent called

+ Diffusion current

inanise
*
Ibifusion.
(Due
tocause
Drift
=> it
holes
When an electric
field is applied here -> are

attracted toward-we terminal of eare toward

attracted
battery &
the terminal of battery. -> cause movement
of charge cassies. (driff)
↳
bsoduces cullent:

bsiftcassent
-

(Ibsift)
*

Disection opposite
to Idiffusion.
 Biode:->
Semiconductor
~
formed by joining ptyped
a

n-type semiconductors
together as a p-n junction.
·
cursent
passes through
one direction only.

Biasing
=>
condition of p-n junction (Diode): ->
3congus
- Zesr Bias:no external applied to
voltage pun junction diode.
- Forward Bias; - ↳type ntype
tre ofBattery toptype
·
Depletion layer to
width
-- re to type A potential bassier
↑

11-
-

Reversed Bias to
is
of Battery type
-

Ive a

btype
ntpe p
to
& -
ve type.
width I
·

ofDepletion layer
04 Potential Bassies

-It
8.3V 0.7V

qu

symbol

v I =
characteristics:-
 ~
Major Applications of biode: ->

clipper Circuit
·
Rectifies circuitswitching
a o

a
clamping
a
protection discuit
 0:
artin
ser
(i 23)
=

-> protection Circuit ->

↳ As
ofRelay flywheel diode.
 I
Diode: -
(symbol)
-

Zenes

↳
-
heavily doped semiconductor
designed operate
to in severse bias
condition.
-

specially designed optimise

to the breakdown region.
-

If installed as in
forward bias circuititwill act as normal

diode.
-

depletion layer is
very thin because ofdoped impurities.
↳ I even for
a small severse
voltage.
0
zenes
voltage:-> V which
at depletion layer completely
(Vz) vanish.

- I characteristics; ->
*

·2
types of breakdown:-
(i) Avalanche Breakdown:

·
At high Vernesse, (V261) =

face Ihave high Energy quelo-

-> collide with
other city
atoms -> e-movements
cause
high spike in Rev
cassent for small Av.

↳ can cause diode

breakdown

(ii) Zenes Beaudown:

· At vz
region, depleting region I getstages, force valance
e- to move to conduction band.
a small increase in sew Voltage
cause high cursent spike.
=>
Applications:->

3
voltage stabilises
-

For metse protection

-

Foz wave
-

shaping
Thysistor

-
-
operation of thysistor
-
basic is

snubbel circuit: -
~
~
Thyeistar Dimming circuit-

in
-

·"
↳
is V
RL

1.4
Ri

-
SRI
1
R2
->

1 X

V ->
Beightest

pred
&
minimum

(waveforms
triac
 width
Pulse
- raodulation
circuit
(pwm)
Bipolar Junction transistor (BJT)
characteristics Be
of
MOSFET
INDUCTION MOTOR
·For low - made of Cu
·
For high pre A.
-
↑
~ Methods Starting
of Synchihous Motos:->
·
Damper Winding
·
Pony Method
Motor
a variable
sequency Method.
~types ofsynchronous Motoc: ->

to
Dc* Excited Motor N
on Excited ractor
DC Motor S
Brushless DC Motor
 DC Formula & Back
Motos
emequation
emf
① eqa. ofAC Motoc: ->

Up
=
P No. =

of poles;4 :tlux pespole; N= motos

speed (spm)
z No.
ofconductors;A No. ofparallel paths
=
:

P, 2 & A are fixed

: Vb < G. N 1 constant
ofPerpostionality
Vb k
=
. N

written
I back
emf. can also be as:

Vb V =
-
IaRa
Cursent & Resistance
v applied voltage (input);Ia9Ra=Aamature
=

...ON U-laRa
=

os N be
can
r-IaRa
fare
->
k =
calculated
↑N here
& Tosque equ ofPC. Motos:->
F
↑=Fdn 9
de
7 Bit dn
=
o

No F

i of
T Kt -> Kt: constant
perportionality
=

os called as
"
↳ T cambe
I

kt =
Motos Tosque Constant
-

-
changed by
changing
mu+kn= 1 & IO +
KO:T
Stepper Motor