Addis Ababa Science and Technology University

College of Engineering
Department of Electrical & Computer Engineering
Applied Electronics I Laboratory 1

Experiment 1: Characteristics of Diode

Component
Resistor, Diode, wires and jumpers

Equipment:
Diode, Digital Multimeters, Power Supply

Objective:
1- Calculate current across resistor
a. Measure voltage across a resistor, Calculate the voltage across diode and calculate current across
resistor and diode
2- To study and verify the functionality of
a. PN unction diode in forward bias and Reverse bias
3- To investigate the forward and reverse-biased characteristics of diodes.

Theory:
A popular semiconductor device called a diode is made by combining P & N type semiconductor materials.
The doped regions meet to form a PN junction.

A diode is a semiconductor device that conducts current much more readily in one direction than in the
other. The voltage across the diode terminals determines whether or not the diode will conduct. If the anode is more
positive than the cathode, the diode will conduct current and is said to be forward-biased. If the cathode is more
positive than the anode, the diode will conduct only an extremely small leakage current and is said to be reverse-
biased.

When forward-biased, the voltage drop across a typical silicon diode is about 0.7V (germanium diodes drop
about 0.3V). At forward voltages below this threshold, the diode only permits a small current to flow. This threshold
is known as the knee of the diode characteristic curve. Since the relationship between voltage across and current
through the diode changes in this region, the diode's resistance changes.

The schematic symbol for a semiconductor diode is shown in fig 1. The (+)P-side of the diode is called the
anode (A), while the (–)N-side of the diode is called the cathode (K).

Figure 1: Diode

Biasing of PN junction Diode:

Forward bias operation

The P-N junction supports uni-directional current flow. If +ve terminal of the input voltage supply is
connected to P side and –ve terminal is connected the n side as shown in figure 9-A, then diode is said to be forward
biased condition. In this condition the height of the potential barrier at the junction is lowered by an amount equal
to given forward biasing voltage. Both the holes from p-side and electrons from n-side cross the junction
simultaneously thereby decreasing the depleted region. This constitutes a forward current (majority carrier
movement – diffusion current). Assuming current flowing through the diode to be very large, the diode can be
approximated as short-circuited switch. Diode offers a very small resistance called forward resistance (few ohms)

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 Addis Ababa Science and Technology University
College of Engineering
Department of Electrical & Computer Engineering
Applied Electronics I Laboratory 1

Reverse bias operation

If negative terminal of the input supply is connected to p-side and –ve terminal is connected to n-side, as
shown in figure 9-B, then the diode is said to be reverse biased. In this condition an amount equal to reverse biasing
voltage increases the height of the potential barrier at the junction. Both the holes on P-side and electrons on N-side
tend to move away from the junction there by increasing the depleted region. However, the process cannot continue
indefinitely, thus a small current called reverse saturation current continues to flow in the diode. This current is
negligible; the diode can be approximated as an open circuited switch it offers a very high resistance called reverse
resistance (few Kiloohms).

Figure 2: (A) Forward Bias Condition (B) Reverse Bias Condition

Procedure:
(a) Forward and Forward Bias Condition:

Record your results in table 1-a
1- Collect your components from your
instructor, Resistor and Diode
2- Connect the circuit as shown in Fig.2 (A) use
variable power supply
3- Following voltage across Table 1, vary your
voltage accordingly
4- Record the voltage across resistor and diode
and place your value in Table 1-a.
5- Calculate current across resistor and diode.
6- After finishing recording values across Table
1, Plot V-I of resistor and diode
Record your results in table 1-b
1- Collect your components from your
instructor, Resistor and Diode
2- Connect the circuit as shown in Fig.2 (B) use
variable power supply
3- Following voltage across Table 1-b, vary your
voltage accordingly
4- Record the voltage across resistor and diode
and place your value in Table 1-b.
5- Calculate current across resistor and diode.
6- After finishing recording values across Table
1-b, Plot V-I of resistor and diode

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 Addis Ababa Science and Technology University
College of Engineering
Department of Electrical & Computer Engineering
Applied Electronics I Laboratory 1

SN. Name Id Section

1
2
3
4
5
6
7
8

Laboratory Report:

VS (Volts) VD (Volts) VR (Volts) I = VR/R (mA) VS (Volts) VD (Volts) VR (Volts) I = VR/R (mA)
0 0
0.2 -2
0.4 -4
0.6 -6
0.8 -8
1 -10
3 -12
6
Table 1: Results of a) forward bias b) Reverse Bias
10 Discuss:

December, 2023 3
 Addis Ababa Science and Technology University
College of Engineering
Department of Electrical & Computer Engineering
Applied Electronics I Laboratory 1

Experiment 2: Half-wave and Full-wave Rectifiers

Component:
Diode, Resistors, Function generator, Oscilloscope

Objective:
To study and verify the functionality of PN junction diode as series and shunt clippers, know how to set AC
source from Function generator, and know how to measure and observe AC signal in Oscilloscope.

Theory
One of the basic applications of diode is as a rectifier. Where a rectifier is the first stage in converting an
AC to DC. Rectifiers are of two types: Half-wave and Full-wave rectifiers

Figure 3: a) Half-wave rectifier circuit b) Half-wave rectifier with capacitor filter

Procedure:
Half-wave
1- Set an input signal from function generator
a. A sine wave signal with a frequency
of 50Hz and peak to peak voltage
12V-V
2- Observe your input signal in oscilloscope,
a. Measure your peak to peak and
frequency
3- Design your circuit as shown in figure 3-a
4- Connect input signal from function generator
to your circuit
5- Display your input and output in oscilloscope
6- Measure your Peak voltage across input and
output.
a. State the difference
7- Draw your input and output in your laboratory
report
8- Measure and calculate the required values
9- Discuss your results
10- Connect capacitor in parallel with your load
a. Connect 22 µF
b. Connect 100 µF
c. Discuss the difference in the output
Full-wave
1- Set an input signal from function generator
a. A sine wave signal with a frequency
of 50hz and peak to peak voltage
12V-V
2- Observe your input signal in oscilloscope,
a. Measure your peak to peak and
frequency
3- Design your circuit as shown in figure 3-b
4- Connect input signal from function generator
5- Display your input and output in oscilloscope
6- Measure your Peak voltage across input and
output.
a. State the difference
7- Draw your input and output in your laboratory
report
8- Measure and calculate the required values
9- Discuss your results
10- Connect capacitor in parallel with your load
a. Connect 22 µF
b. Connect 100 µF
c. Discuss the difference in the output

December, 2023 4
 Addis Ababa Science and Technology University
College of Engineering
Department of Electrical & Computer Engineering
Applied Electronics I Laboratory 1

Results and Discussion:

Half-Wave Full-Wave

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